JPH0261019B2 - - Google Patents
Info
- Publication number
- JPH0261019B2 JPH0261019B2 JP56040002A JP4000281A JPH0261019B2 JP H0261019 B2 JPH0261019 B2 JP H0261019B2 JP 56040002 A JP56040002 A JP 56040002A JP 4000281 A JP4000281 A JP 4000281A JP H0261019 B2 JPH0261019 B2 JP H0261019B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- selectively formed
- liquid crystal
- semiconductor element
- multilayer semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 66
- 239000004973 liquid crystal related substance Substances 0.000 claims description 58
- 239000000758 substrate Substances 0.000 claims description 31
- 239000003990 capacitor Substances 0.000 claims description 29
- 238000003860 storage Methods 0.000 claims description 27
- 229910052751 metal Inorganic materials 0.000 claims description 25
- 239000002184 metal Substances 0.000 claims description 25
- 210000002858 crystal cell Anatomy 0.000 claims description 20
- 239000011521 glass Substances 0.000 claims description 17
- 239000011159 matrix material Substances 0.000 claims description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 5
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 229910052741 iridium Inorganic materials 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 13
- 238000000034 method Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 238000003491 array Methods 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000002457 bidirectional effect Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000003949 trap density measurement Methods 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Electrodes Of Semiconductors (AREA)
- Liquid Crystal Display Device Control (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56040002A JPS57154280A (en) | 1981-03-18 | 1981-03-18 | Liquid crystal picture display unit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56040002A JPS57154280A (en) | 1981-03-18 | 1981-03-18 | Liquid crystal picture display unit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57154280A JPS57154280A (en) | 1982-09-24 |
| JPH0261019B2 true JPH0261019B2 (enrdf_load_stackoverflow) | 1990-12-18 |
Family
ID=12568703
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56040002A Granted JPS57154280A (en) | 1981-03-18 | 1981-03-18 | Liquid crystal picture display unit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57154280A (enrdf_load_stackoverflow) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6037525A (ja) * | 1983-08-11 | 1985-02-26 | Citizen Watch Co Ltd | 表示パネルの駆動方法 |
| JPS61269121A (ja) * | 1985-05-24 | 1986-11-28 | Sony Corp | 液晶デイスプレイ装置 |
| JPS6219953U (enrdf_load_stackoverflow) * | 1985-07-20 | 1987-02-06 | ||
| JPS62134628A (ja) * | 1985-12-06 | 1987-06-17 | Nec Corp | 蓄積コンデンサアドレスダイオ−ド型アクテイブマトリクス液晶表示装置とその駆動方法 |
| JPS62227130A (ja) * | 1986-03-28 | 1987-10-06 | Nec Corp | アクテイブマトリクス型液晶表示装置 |
| JPH0827596B2 (ja) * | 1986-12-02 | 1996-03-21 | 松下電器産業株式会社 | アクテイブマトリツクスアレイの製造方法 |
| JPS63148239A (ja) * | 1986-12-12 | 1988-06-21 | Nec Corp | アクテイブマトリツクス型液晶表示装置 |
-
1981
- 1981-03-18 JP JP56040002A patent/JPS57154280A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57154280A (en) | 1982-09-24 |
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