JPH0258806B2 - - Google Patents

Info

Publication number
JPH0258806B2
JPH0258806B2 JP54163695A JP16369579A JPH0258806B2 JP H0258806 B2 JPH0258806 B2 JP H0258806B2 JP 54163695 A JP54163695 A JP 54163695A JP 16369579 A JP16369579 A JP 16369579A JP H0258806 B2 JPH0258806 B2 JP H0258806B2
Authority
JP
Japan
Prior art keywords
control transistor
current
transistor
voltage
control
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP54163695A
Other languages
Japanese (ja)
Other versions
JPS5686509A (en
Inventor
Katsuyuki Ikeda
Yoshio Nakazawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP16369579A priority Critical patent/JPS5686509A/en
Publication of JPS5686509A publication Critical patent/JPS5686509A/en
Publication of JPH0258806B2 publication Critical patent/JPH0258806B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/02Details

Description

【発明の詳細な説明】 本発明は制御端子に加えられる電圧(電流)に
より発振周波数を制御できる電圧制御発振器に関
する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a voltage controlled oscillator whose oscillation frequency can be controlled by a voltage (current) applied to a control terminal.

従来から入力端子に加える電圧(または流入す
る電流)によりその発振周波数を制御できる発振
器(電圧制御発振器)が考案されている。第1図
は従来の電圧制御発振器の例を示す図である。こ
の回路は位相固定ループ(PLL)用の相補MOS
集積回路に使われているもので、半導体集積回路
101と外付のコンデンサ102により構成され
る。集積回路中の103,104はレベル検出回
路でコンデンサ102の両端の電圧を検出しレベ
ル検出回路103,104のスレツシヨルドレベ
ルを越えるたびにコンデンサ102を逆方向に接
ぎかえ充電の方向を逆にする。コンデンサ102
に充電する電流量をトランジスタ105及び抵抗
106,107により変えてやると充電速度が変
わり、発振周波数を変化できる。
Oscillators (voltage controlled oscillators) whose oscillation frequency can be controlled by a voltage applied to an input terminal (or a current flowing in) have been devised. FIG. 1 is a diagram showing an example of a conventional voltage controlled oscillator. This circuit is a complementary MOS for phase-locked loop (PLL).
It is used in integrated circuits and is composed of a semiconductor integrated circuit 101 and an external capacitor 102. 103 and 104 in the integrated circuit are level detection circuits that detect the voltage across the capacitor 102, and each time the voltage exceeds the threshold level of the level detection circuits 103 and 104, the capacitor 102 is connected in the opposite direction to reverse the charging direction. do. Capacitor 102
By changing the amount of current charged by the transistor 105 and resistors 106 and 107, the charging speed changes and the oscillation frequency can be changed.

この他に従来の例として発振回路を構成するコ
ンデンサの容量を可変容量コンデンサ等で変更し
てやる方法等がある。
In addition, as a conventional example, there is a method in which the capacitance of a capacitor constituting an oscillation circuit is changed using a variable capacitor or the like.

これ等の従来の電圧制御発振器の欠点を述べる
前に理想的な電圧制御発振器は集積回路により構
成され第2図に示すように集積回路201と接続
される端子は出力端子202と制御電圧を印加す
る入力端子203及び電源端子のみでありコンデ
ンサ等の接続のための端子を他に設ける必要のな
いことである。入力端子203、出力端子202
に接続される回路は大抵の場合、半導体集積回路
で構成できるので発振回路はすべてモノリシツク
集積化できる。また、コンデンサ等、発振回路の
発振周波数に直接関係する素子を半導体集積回路
の外に出すことは接続ピンの浮遊容量の影響が出
て高い周波数に発振はしにくくなる。高い周波数
を発振させようとすれば素子のインピーダンスを
低くする必要があり、消費電力が増す。
Before discussing the shortcomings of these conventional voltage controlled oscillators, an ideal voltage controlled oscillator is constructed from an integrated circuit.As shown in FIG. There is only an input terminal 203 and a power supply terminal for connection, and there is no need to provide any other terminal for connecting a capacitor or the like. Input terminal 203, output terminal 202
In most cases, the circuits connected to the oscillator can be constructed from semiconductor integrated circuits, so all oscillation circuits can be monolithically integrated. Furthermore, if elements such as capacitors that are directly related to the oscillation frequency of the oscillation circuit are placed outside the semiconductor integrated circuit, the stray capacitance of the connection pins will affect the oscillation, making it difficult to oscillate at a high frequency. In order to oscillate at a high frequency, the impedance of the element must be lowered, which increases power consumption.

以上述べたように従来の電圧制御発振器の欠点
をまとめると、 1 コンデンサ、可変容量ダイオード等のデイス
クリート部品を半導体集積回路に外付しなけれ
ばならない。
As mentioned above, the drawbacks of conventional voltage controlled oscillators are summarized as follows: 1. Discrete components such as capacitors and variable capacitance diodes must be externally attached to the semiconductor integrated circuit.

2 そのためにスペースフアクタ、組立製造時に
おけるデメリツトがコストが高くなる欠点があ
る。
2. Therefore, there is a disadvantage in that the space factor and the cost increase during assembly and manufacturing.

3 浮遊容量により高い周波数の発振が難しい。
無理に発振させようとすると消費電力が高くな
る。また周囲の影響も受け荷電体がコンデンサ
に近付くと発振周波数が変動する。
3. Difficult to oscillate at high frequencies due to stray capacitance.
If you try to force oscillation, power consumption will increase. The oscillation frequency also fluctuates as the charged body approaches the capacitor due to the influence of the surrounding environment.

本発明の目的は以上に述べた従来の電圧制御発
振器の欠点のすべてを取り除き、完全にモノリシ
ツクな集積回路により安定で低消費電力の電圧制
御発振器の新たな回路を示し、電子装置構成時の
実装密度の向上、コストダウン、高性能化を計る
ことにある。
The purpose of the present invention is to eliminate all of the drawbacks of the conventional voltage controlled oscillators mentioned above, and to present a new circuit for a voltage controlled oscillator that is stable and low power consumption by a completely monolithic integrated circuit, and to implement the voltage controlled oscillator in the configuration of an electronic device. The goal is to improve density, reduce costs, and improve performance.

本発明の他の目的は電圧制御発振器の発振周波
数を制御するために入力される制御電圧を電流に
変換し、電流の変化に対して発振周波数を直線的
に変化させ、発振を高精度、高特性に行うことに
ある。
Another object of the present invention is to convert a control voltage input to a current to control the oscillation frequency of a voltage controlled oscillator, to linearly change the oscillation frequency with respect to changes in the current, and to control the oscillation with high precision and high accuracy. The characteristic lies in what you do.

以下に本発明を相補MOS集積回路で実現する
場合を例に説明する。同様の考え方に基づき例え
ばバイポーラ集積回路等の他のプロセスによる集
積回路でも実現できる。
An example in which the present invention is implemented using a complementary MOS integrated circuit will be described below. Based on the same concept, it is also possible to implement integrated circuits based on other processes, such as bipolar integrated circuits.

第3図は本発明の電圧制御発振器を説明するた
めの図である。301〜30oは各々同一形状の
セルを構成している。セル302を例に内部の各
素子の説明をする。トランジスタ306と307
はゲートどうし、ドレインどうしを接続しインバ
ータ回路を形成している。トランジスタ305及
び308は流入流出電流を制御するためのトラン
ジスタで電源電位VDD,VSSからそれぞれ対称に
ゲート電圧を制御することによりインバータ回路
の流入流出電圧を制御する。このように流入流出
電流を制御されたインバータ回路を奇数段縦接続
し最終段出力を最前段の入力に帰還する。このよ
うにしてリングオシレータを構成する。トランジ
スタ309,310は電流制御トランジスタ30
5,308のゲート電圧を対称に制御するための
ものでスレツシヨルド電圧及び電流伝達率の等し
いP,Nチヤネルトランジスタを図のように接続
することによりトランジスタ310のゲート−ソ
ース間電圧をVCとすればトランジスタ309の
ゲート−ソース間電圧は−VCとなる。このよう
にしてP,Nチヤネルの両トランジスタのゲート
電圧を対称に変化させることにより発振出力波形
をほぼ電源の中央にもつてくることができる。3
11は制御端子でここに与える制御電圧VCで各
インバータの流入流出電流を制御し発振周波数を
コントロールする。312は増幅器で発振出力で
ロジツクレベルに増幅する。313は出力端子で
ある。
FIG. 3 is a diagram for explaining the voltage controlled oscillator of the present invention. 301 to 30 o constitute cells of the same shape. Each internal element will be explained using the cell 302 as an example. transistors 306 and 307
The gates are connected together and the drains are connected together to form an inverter circuit. Transistors 305 and 308 are transistors for controlling inflow and outflow currents, and control the inflow and outflow voltages of the inverter circuit by controlling gate voltages symmetrically from power supply potentials V DD and V SS , respectively. An odd number of inverter circuits whose inflow and outflow currents are controlled in this way are connected in series, and the output of the final stage is fed back to the input of the front stage. In this way, a ring oscillator is constructed. Transistors 309 and 310 are current control transistors 30
This is to symmetrically control the gate voltage of transistor 310, and by connecting P and N channel transistors with equal threshold voltage and current transfer rate as shown in the figure, the gate-source voltage of transistor 310 is set to V C. For example, the gate-source voltage of transistor 309 becomes -V C . By symmetrically changing the gate voltages of both the P and N channel transistors in this manner, the oscillation output waveform can be brought to approximately the center of the power supply. 3
Reference numeral 11 denotes a control terminal that controls the inflow and outflow currents of each inverter and the oscillation frequency using a control voltage V C applied here. An amplifier 312 amplifies the oscillation output to a logic level. 313 is an output terminal.

第4図は本発明の電圧制御発振器を説明するた
めの他の例を示す図で第3図における流入流出電
流制御トランジスタ305,308を各段同一の
トランジスタ401,402に置換えたものであ
る。第3図に比較し素子数及び消費電流を少なく
できるが発振波形が正または負のどちらか一方に
かたより易く、広い電源電圧範囲で安定な動作を
させるに第3図の回路の方がすぐれている。尚、
P,Nチヤネルの電流制御トランジスタのゲート
電圧を対称に変化させることは次のように得られ
る。
FIG. 4 is a diagram showing another example for explaining the voltage controlled oscillator of the present invention, in which the inflow and outflow current control transistors 305 and 308 in FIG. 3 are replaced with the same transistors 401 and 402 in each stage. Compared to the circuit in Figure 3, the number of elements and current consumption can be reduced, but the oscillation waveform tends to be either positive or negative, and the circuit in Figure 3 is better for stable operation over a wide power supply voltage range. ing. still,
Symmetrically changing the gate voltages of the P and N channel current control transistors can be obtained as follows.

トランジスタ309,310のスレツショルド
電圧を各々VTP,VTN、電流伝達率に比例した係
数を各々1/βP,1/βNとし、トランジスタ309,
3 10に流れる電流をI、トランジスタ309のソ
ース−ドレイン間電圧をVPとし、トランジスタ
310が飽和領域で動作するとすれば、 309について、I=βP/2・(VC−VTP2…(1) 310について、I=βN/2・(VP−VTN2…(2) となり、(1),(2)より、 βP/2・(VP−VTP2=βN/2・(VC−VTN2 ここで、VTP=VTN、βP=βNであるから、VP
VCとなり、トランジスタ310が飽和領域で動
作することを条件として電流制御トランジスタの
ゲート電圧は対称に変化する。
The threshold voltages of the transistors 309 and 310 are respectively V TP and V TN , and the coefficients proportional to the current transfer rate are 1/β P and 1/β N , respectively.
3 The current flowing through 10 is I, the source-drain voltage of transistor 309 is V P , and if transistor 310 operates in the saturation region, then for 309, I = β P /2 · (V C - V TP ) 2 …(1) For 310, I=β N /2・(V P −V TN ) 2 …(2) From (1) and (2), β P /2・(V P −V TP ) 2N /2・(V C −V TN ) 2Here , since V TP = V TN and β P = β N , V P =
V C and the gate voltage of the current control transistor changes symmetrically on the condition that the transistor 310 operates in the saturation region.

第3図、第4図の回路の制御電圧VCと発振周
波数をプロツトすると第6図の501のように
なる。ここで制御電圧VCと周波数の関係は非
直線的に変化する。これは制御電圧VCが小さい
ためNチヤンネルトランジスタ310を飽和領域
で動作させることができない場合に、電流制御ト
ランジスタのゲート電圧の対称性が失われてしま
うことを原因としている。この非直線性を補正
し、制御入力に対する発振周波数の関係を直線的
にするには第3図、第4図における流入流出電流
制御トランジスタ305,308、または40
1,402のゲートに電圧を与える回路309,
310を第5図のように変更する。
When the control voltage V C and the oscillation frequency of the circuits shown in FIGS. 3 and 4 are plotted, the result is shown as 501 in FIG. 6. Here, the relationship between control voltage V C and frequency changes non-linearly. This is because the symmetry of the gate voltage of the current control transistor is lost when the N-channel transistor 310 cannot be operated in the saturation region because the control voltage V C is small. To correct this nonlinearity and make the relationship between the oscillation frequency and the control input linear, the inflow/outflow current control transistors 305, 308, or 40 in FIGS.
A circuit 309 that applies voltage to the gate of 1,402,
310 is changed as shown in FIG.

第5図は、本発明の電圧制御発振器の最も特徴
となる部分を示す図である。605は制御電圧端
子であり、この端子の制御電圧をトランジスタ6
06によつて電流に変換して緩衝増幅し、抵抗6
09に伝達する。図において、607は第3図に
おけるトランジスタ305のゲート及び第4図に
おけるトランジスタ401のゲート、608はト
ランジスタ308のゲート及びトランジスタ40
2のゲートに各々接続される。トランジスタ60
4,610は共にゲートとドレインが接続されて
おり、常に飽和領域で動作する。ここでトランジ
スタ604,610,612はトランジスタの定
数であるスレツシヨルド電圧、電流伝達率がほぼ
等しい。従つて、トランジスタ612も飽和領域
で動作し、トランジスタ604に流れる電流と同
じ電流がトランジスタ610または612に流れ
る。すなわち、トランジスタ604,610,6
12は共に電流が流れる限り飽和領域で動作し、
互いに等しいトランジスタの定数を有するため、
607,608に常に電源電圧に対して対称な電
圧を出力できる。従つて、トランジスタ604に
流入する電流icと発振周波数の関係をプロツト
すると第6図502のように直線化される。
FIG. 5 is a diagram showing the most characteristic part of the voltage controlled oscillator of the present invention. 605 is a control voltage terminal, and the control voltage of this terminal is applied to the transistor 6.
06 converts it into a current and buffers and amplifies it, and resistor 6
09. In the figure, 607 is the gate of the transistor 305 in FIG. 3 and the gate of the transistor 401 in FIG. 4, and 608 is the gate of the transistor 308 and the gate of the transistor 40.
2 gates, respectively. transistor 60
4 and 610 both have their gates and drains connected and always operate in the saturation region. Here, the transistors 604, 610, and 612 have substantially the same threshold voltage and current transfer rate, which are transistor constants. Therefore, transistor 612 also operates in the saturation region, and the same current flows through transistor 610 or 612 as flows through transistor 604. That is, transistors 604, 610, 6
12 both operate in the saturation region as long as current flows,
Since the transistor constants are equal to each other,
607 and 608 can always output voltages that are symmetrical with respect to the power supply voltage. Therefore, when the relationship between the current ic flowing into the transistor 604 and the oscillation frequency is plotted, it is linearized as shown in FIG. 6 502.

以上のように、本発明は集積回路上に作り込む
ことにより数百Hzから集積回路上の素子が応答で
きる最高の周波数まで発振可能な電圧制御発振器
を作ることができる。発振回路の付加容量は集積
回路上のトランジスタのゲート容量、配線容量、
PN接合容量(ドレイン)等の寄生容量まで下げ
ることができる。この容量は集積回路に外付コン
デンサを付加する場合に比較し1〜2桁小さいも
のである。従つてその分だけ回路インピーダンス
を高くでき発振時の電流を減らすことができる。
As described above, by incorporating the present invention onto an integrated circuit, it is possible to create a voltage controlled oscillator capable of oscillating from several hundred Hz to the highest frequency to which the elements on the integrated circuit can respond. The additional capacitance of the oscillation circuit is the gate capacitance of the transistor on the integrated circuit, the wiring capacitance,
Parasitic capacitance such as PN junction capacitance (drain) can be reduced. This capacitance is one to two orders of magnitude smaller than when an external capacitor is added to the integrated circuit. Therefore, the circuit impedance can be increased accordingly, and the current during oscillation can be reduced.

さらに、リングオシレータのP,Nチヤネル電
流制御トランジスタのゲート電圧を発生する回路
を、制御電圧を電流に変換するトランジスタ60
6とゲート・ドレインを接続したトランジスタ6
04の直列回路と、ゲート・ドレインを接続した
トランジスタ610とゲートを604のゲート・
ドレインに接続するトランジスタ612の直列回
路とによつて構成し、トランジスタ604,61
0,612のスレツシヨルド電圧及び電流伝達率
を等しくしたので、3つのトランジスタは常に飽
和領域で動作し、各トランジスタには同じ電流が
流れ、各ドレインに常に対称性のあるゲート電圧
を発生できる。従つて、リングオシレータの発振
周波数はこれらの電流値に基づいて決定されるよ
うになり、結果として、リングオシレータの発振
周波数はこれらの電流値と直線的な関係を有する
ため、高精度、高特性な電圧制御発振器を提供で
きる。
Furthermore, the circuit for generating the gate voltage of the P, N channel current control transistor of the ring oscillator is replaced with a transistor 60 that converts the control voltage into a current.
6 and the transistor 6 whose gate and drain are connected
The series circuit of 04, the transistor 610 whose gate and drain are connected, and the gate of 604
A series circuit of a transistor 612 connected to the drain, and a series circuit of transistors 604 and 61
Since the threshold voltage of 0.612 and the current transfer rate are made equal, the three transistors always operate in the saturation region, the same current flows through each transistor, and a symmetrical gate voltage can always be generated at each drain. Therefore, the oscillation frequency of the ring oscillator is determined based on these current values, and as a result, the oscillation frequency of the ring oscillator has a linear relationship with these current values, resulting in high precision and high characteristics. It is possible to provide a voltage controlled oscillator.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の電圧制御発振器を示す図。第2
図は理想的な電圧制御発振器を示す図。第3図、
第4図は本発明の電圧制御発振器を説明するため
の図。第5図は本発明の電圧制御発振器の部分を
示す図。第6図は本発明の電圧制御発振器にかか
わる制御電圧・電流対発振周波数特性を示す図。 306,307,403,404……インバー
タを構成するトランジスタ、305,308,4
01,402……インバータの流入流出電流を制
御する電流制御トランジスタ。
FIG. 1 is a diagram showing a conventional voltage controlled oscillator. Second
The figure shows an ideal voltage controlled oscillator. Figure 3,
FIG. 4 is a diagram for explaining the voltage controlled oscillator of the present invention. FIG. 5 is a diagram showing a portion of the voltage controlled oscillator of the present invention. FIG. 6 is a diagram showing control voltage/current versus oscillation frequency characteristics regarding the voltage controlled oscillator of the present invention. 306, 307, 403, 404...Transistors forming the inverter, 305, 308, 4
01,402...Current control transistor that controls the inflow and outflow current of the inverter.

Claims (1)

【特許請求の範囲】[Claims] 1 奇数段のインバータを縦続接続し、最後段イ
ンバータの出力を最前段インバータの入力に帰還
して成るリングオシレータと、第1の電源線と少
なくとも1つの前記インバータの第1の電源端子
の間に接続されると共に制御電極に印加される電
圧に応じて該インバータに流れる電流を制御する
第1極性の第1の電流制御トランジスタと、第2
の電源線と前記少なくとも1つのインバータの第
2の電源端子の間に接続されると共に制御電極に
印加される電圧に応じて該インバータに流れる電
流を制御する第2極性の第2の電流制御トランジ
スタと、一端を前記第1の電源線に接続する第1
極性の第1の制御用トランジスタと一端を前記第
2の電源線に接続する第2極性の第2の制御用ト
ランジスタとを直列接続して成る第1の直列回路
と、一端を前記第1の電源線に接続する第3の制
御用トランジスタと一端を前記第2の電源線に接
続する第2極性の第4の制御用トランジスタとを
直列接続して成る第2の直列回路とを備え、前記
第1の制御用トランジスタの他端を該第1の制御
用トランジスタ及び前記第1の電流制御トランジ
スタの各制御電極に接続し、前記第4の制御用ト
ランジスタの他端を該第4の制御用トランジス
タ、前記第2の制御用トランジスタ及び前記第2
の電流制御トランジスタの各制御電極に接続し、
前記第3の制御用トランジスタは制御電極に印加
される可変電圧に基づいて前記第4の制御用トラ
ンジスタに流れる可変電流を決定し、前記第1の
電源線と前記第1の制御用トランジスタの他端の
間には前記可変電流に応じて変化する第1の電圧
が発生し、前記第4の制御用トランジスタの他端
と前記第2の電源線の間には前記可変電流に応じ
て変化する第2の電流が発生し、前記第1、第2
及び第4の制御用トランジスタは各々に流れる電
流が互いに等しくなると共に前記第1の電圧と前
記第2の電圧が互いに等しくなるように各々のス
レツシヨルド電圧及び電流伝達率が各々ほぼ等し
く設定され、前記リングオシレータは前記可変電
流に応じて発振周波数が変化することを特徴とす
る電圧制御発振器。
1. A ring oscillator formed by cascading an odd number of inverters and feeding back the output of the last inverter to the input of the first inverter, and a first power line and the first power terminal of at least one of the inverters. a first current control transistor of a first polarity that is connected and controls a current flowing through the inverter according to a voltage applied to a control electrode;
a second current control transistor of a second polarity, which is connected between the power line of the inverter and the second power terminal of the at least one inverter, and controls the current flowing through the inverter according to the voltage applied to the control electrode; and a first power supply line having one end connected to the first power supply line.
a first series circuit formed by connecting in series a first control transistor with a polarity and a second control transistor with a second polarity, one end of which is connected to the second power supply line; a second series circuit formed by connecting in series a third control transistor connected to the power supply line and a fourth control transistor of a second polarity whose one end is connected to the second power supply line; The other end of the first control transistor is connected to each control electrode of the first control transistor and the first current control transistor, and the other end of the fourth control transistor is connected to the fourth control transistor. a transistor, the second control transistor and the second control transistor;
connected to each control electrode of the current control transistor of
The third control transistor determines a variable current flowing through the fourth control transistor based on the variable voltage applied to the control electrode, and the third control transistor determines a variable current flowing through the fourth control transistor based on the variable voltage applied to the control electrode. A first voltage that changes depending on the variable current is generated between the ends, and a first voltage that changes depending on the variable current is generated between the other end of the fourth control transistor and the second power supply line. A second current is generated, and the first and second
and the fourth control transistor, the threshold voltages and current transfer rates of the transistors are set to be approximately equal so that the currents flowing through each transistor are equal to each other, and the first voltage and the second voltage are equal to each other; The ring oscillator is a voltage controlled oscillator whose oscillation frequency changes according to the variable current.
JP16369579A 1979-12-17 1979-12-17 Voltage controlled oscillator Granted JPS5686509A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16369579A JPS5686509A (en) 1979-12-17 1979-12-17 Voltage controlled oscillator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16369579A JPS5686509A (en) 1979-12-17 1979-12-17 Voltage controlled oscillator

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP62254867A Division JPS63119315A (en) 1987-10-09 1987-10-09 Voltage controlled oscillator

Publications (2)

Publication Number Publication Date
JPS5686509A JPS5686509A (en) 1981-07-14
JPH0258806B2 true JPH0258806B2 (en) 1990-12-10

Family

ID=15778843

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16369579A Granted JPS5686509A (en) 1979-12-17 1979-12-17 Voltage controlled oscillator

Country Status (1)

Country Link
JP (1) JPS5686509A (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58118135A (en) * 1982-01-06 1983-07-14 Hitachi Ltd Semiconductor integrated circuit device
JPS6139722A (en) * 1984-07-31 1986-02-25 Nippon Gakki Seizo Kk Delay time stabilizing circuit
JPS62229868A (en) * 1986-03-29 1987-10-08 Toshiba Corp Semiconductor integrated circuit device
JPS6324712A (en) * 1986-07-17 1988-02-02 Toshiba Corp Mos-type semiconductor circuit
JPH02107018A (en) * 1988-10-17 1990-04-19 Hitachi Ltd Voltage controlled oscillator
JPH03167915A (en) * 1989-11-27 1991-07-19 Seiko Instr Inc Signal processing unit
JP2840472B2 (en) * 1991-03-25 1998-12-24 三洋電機株式会社 Voltage controlled oscillator
US5278522A (en) * 1992-11-19 1994-01-11 Codex, Corp. High frequency voltage controlled oscillator
KR102352633B1 (en) 2014-07-25 2022-01-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Oscillator circuit and semiconductor device including the same
KR102553553B1 (en) 2015-06-12 2023-07-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Imaging device, method for operating the same, and electronic device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5193850A (en) * 1975-01-29 1976-08-17 Cmos sadozofukukikairo
JPS52123851A (en) * 1976-04-09 1977-10-18 Rca Corp Voltage controlled oscillator
JPS53138264A (en) * 1977-05-09 1978-12-02 Toshiba Corp V-f converter

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5193850A (en) * 1975-01-29 1976-08-17 Cmos sadozofukukikairo
JPS52123851A (en) * 1976-04-09 1977-10-18 Rca Corp Voltage controlled oscillator
JPS53138264A (en) * 1977-05-09 1978-12-02 Toshiba Corp V-f converter

Also Published As

Publication number Publication date
JPS5686509A (en) 1981-07-14

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