JPH0258782B2 - - Google Patents
Info
- Publication number
- JPH0258782B2 JPH0258782B2 JP57036142A JP3614282A JPH0258782B2 JP H0258782 B2 JPH0258782 B2 JP H0258782B2 JP 57036142 A JP57036142 A JP 57036142A JP 3614282 A JP3614282 A JP 3614282A JP H0258782 B2 JPH0258782 B2 JP H0258782B2
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- circuit
- input
- voltage
- resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 16
- 230000015556 catabolic process Effects 0.000 claims description 9
- 230000002265 prevention Effects 0.000 claims description 8
- 230000006378 damage Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000005611 electricity Effects 0.000 description 4
- 230000003068 static effect Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
Landscapes
- Bipolar Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57036142A JPS58153361A (ja) | 1982-03-08 | 1982-03-08 | 半導体集積回路 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57036142A JPS58153361A (ja) | 1982-03-08 | 1982-03-08 | 半導体集積回路 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58153361A JPS58153361A (ja) | 1983-09-12 |
| JPH0258782B2 true JPH0258782B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1990-12-10 |
Family
ID=12461536
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57036142A Granted JPS58153361A (ja) | 1982-03-08 | 1982-03-08 | 半導体集積回路 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58153361A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60117653A (ja) * | 1983-11-30 | 1985-06-25 | Fujitsu Ltd | 半導体集積回路装置 |
| JP2892754B2 (ja) * | 1989-03-15 | 1999-05-17 | 松下電器産業株式会社 | サージ保護装置 |
-
1982
- 1982-03-08 JP JP57036142A patent/JPS58153361A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58153361A (ja) | 1983-09-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3058203U (ja) | ラッチアップのない完全に保護されたｃｍｏｓオンチップｅｓｄ保護回路 | |
| KR0139648B1 (ko) | 트리거 전압이 낮은 scr 보호장치 및 보호회로 | |
| US5903424A (en) | Method for protecting an integrated circuit against electro-static discharges | |
| US5895940A (en) | Integrated circuit buffer devices having built-in electrostatic discharge protection thyristors | |
| JP2815561B2 (ja) | 低電圧トリガーシリコン制御整流器を使用したｃｍｏｓ静電放電保護回路 | |
| US5140401A (en) | CMOS ESD protection circuit with parasitic SCR structures | |
| US5717559A (en) | Input/output protection device for use in semiconductor device | |
| KR100751104B1 (ko) | 양방향 디바이스 및 다이오드와 보호 회로 장치 | |
| US20020017654A1 (en) | Protection device with a silicon-controlled rectifier | |
| US20070069310A1 (en) | Semiconductor controlled rectifiers for electrostatic discharge protection | |
| KR100678781B1 (ko) | 회로 보호 장치, 2단자 장치 및 보호된 회로 장치 | |
| US4543593A (en) | Semiconductor protective device | |
| US6215135B1 (en) | Integrated circuit provided with ESD protection means | |
| US5763918A (en) | ESD structure that employs a schottky-barrier to reduce the likelihood of latch-up | |
| JP2003509866A (ja) | 静電破壊保護を有する半導体装置 | |
| US7141831B1 (en) | Snapback clamp having low triggering voltage for ESD protection | |
| KR100276495B1 (ko) | 상보형 금속 산화물 반도체(cmos) 기술의 집적 전자 회로용 극성 반전 보호 장치 | |
| EP0257774A1 (en) | Protection circuit for large-scale integrated circuit | |
| EP2846359B1 (en) | LVTSCR device | |
| US5557130A (en) | ESD input protection arrangement | |
| JPH0258782B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| JP4457620B2 (ja) | 静電破壊保護回路 | |
| CA1289267C (en) | Latchup and electrostatic discharge protection structure | |
| JPS63148671A (ja) | 半導体集積回路装置の静電破壊防止装置 | |
| KR100470994B1 (ko) | 반도체장치의정전기보호장치 |