JPH025531Y2 - - Google Patents
Info
- Publication number
- JPH025531Y2 JPH025531Y2 JP7715382U JP7715382U JPH025531Y2 JP H025531 Y2 JPH025531 Y2 JP H025531Y2 JP 7715382 U JP7715382 U JP 7715382U JP 7715382 U JP7715382 U JP 7715382U JP H025531 Y2 JPH025531 Y2 JP H025531Y2
- Authority
- JP
- Japan
- Prior art keywords
- vacuum
- chamber
- space
- reaction processing
- plasma reaction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000003028 elevating effect Effects 0.000 claims description 17
- 235000012431 wafers Nutrition 0.000 description 32
- 239000007789 gas Substances 0.000 description 9
- 238000005530 etching Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 238000000295 emission spectrum Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7715382U JPS58180631U (ja) | 1982-05-26 | 1982-05-26 | プラズマ反応処理装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7715382U JPS58180631U (ja) | 1982-05-26 | 1982-05-26 | プラズマ反応処理装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58180631U JPS58180631U (ja) | 1983-12-02 |
| JPH025531Y2 true JPH025531Y2 (enrdf_load_stackoverflow) | 1990-02-09 |
Family
ID=30086427
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7715382U Granted JPS58180631U (ja) | 1982-05-26 | 1982-05-26 | プラズマ反応処理装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58180631U (enrdf_load_stackoverflow) |
-
1982
- 1982-05-26 JP JP7715382U patent/JPS58180631U/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58180631U (ja) | 1983-12-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5223001A (en) | Vacuum processing apparatus | |
| KR100347203B1 (ko) | 반도체 웨이퍼 적재 장치,적재 로크,웨이퍼 캐리어 주위로 밀봉된 환경을 유지시키기 위한 방법 및 장치 | |
| JPH0613361A (ja) | 処理装置 | |
| KR20010039900A (ko) | 플라즈마 처리 장치 및 플라즈마 처리 방법 | |
| JPH025531Y2 (enrdf_load_stackoverflow) | ||
| JPH11340208A (ja) | プラズマ処理方法 | |
| JP2939378B2 (ja) | 真空処理装置 | |
| JP3118497B2 (ja) | プラズマ処理装置及びプラズマ処理方法 | |
| JP3162272B2 (ja) | プラズマ処理方法 | |
| JPS62128538A (ja) | 真空中の搬送方法 | |
| JP3276382B2 (ja) | 真空処理装置および真空処理方法 | |
| JP3525039B2 (ja) | 減圧処理装置 | |
| JP3084834B2 (ja) | 半導体デバイスの製造方法 | |
| JPH054282Y2 (enrdf_load_stackoverflow) | ||
| JPH09129611A (ja) | エッチング方法 | |
| JP3160691B2 (ja) | 処理装置 | |
| JP3347812B2 (ja) | 真空容器並びに該真空容器を用いた真空処理方法 | |
| JP3452422B2 (ja) | 真空処理装置 | |
| JP2690971B2 (ja) | 処理方法 | |
| JP2948290B2 (ja) | 基板処理装置 | |
| JPH0669312A (ja) | 可搬式密閉コンテナ移送式の電子基板処理システム | |
| JP2583675Y2 (ja) | 薄膜気相成長装置 | |
| JPH1092724A (ja) | ロードロック室 | |
| JPH1116987A (ja) | ウェハー処理装置 | |
| JPH05335278A (ja) | 真空処理装置 |