JPH0255297A - Method for synthesizing diamond - Google Patents
Method for synthesizing diamondInfo
- Publication number
- JPH0255297A JPH0255297A JP20758288A JP20758288A JPH0255297A JP H0255297 A JPH0255297 A JP H0255297A JP 20758288 A JP20758288 A JP 20758288A JP 20758288 A JP20758288 A JP 20758288A JP H0255297 A JPH0255297 A JP H0255297A
- Authority
- JP
- Japan
- Prior art keywords
- diamond
- substrate
- gas
- base material
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010432 diamond Substances 0.000 title claims abstract description 69
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 65
- 238000000034 method Methods 0.000 title claims description 32
- 230000002194 synthesizing effect Effects 0.000 title claims description 7
- 238000001816 cooling Methods 0.000 claims abstract description 28
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 21
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims abstract description 14
- 239000002994 raw material Substances 0.000 claims abstract description 12
- 238000005520 cutting process Methods 0.000 claims abstract description 8
- 239000000463 material Substances 0.000 claims description 35
- 238000000151 deposition Methods 0.000 claims description 6
- 238000001308 synthesis method Methods 0.000 claims description 4
- 239000007789 gas Substances 0.000 abstract description 38
- 239000000758 substrate Substances 0.000 abstract description 20
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 abstract description 12
- 229930195733 hydrocarbon Natural products 0.000 abstract description 9
- 150000002430 hydrocarbons Chemical class 0.000 abstract description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 7
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 abstract description 6
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 abstract description 3
- 239000001294 propane Substances 0.000 abstract description 3
- 239000000956 alloy Substances 0.000 abstract description 2
- 229910045601 alloy Inorganic materials 0.000 abstract description 2
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 abstract description 2
- 239000000919 ceramic Substances 0.000 abstract description 2
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 abstract description 2
- 229910052751 metal Inorganic materials 0.000 abstract description 2
- 239000002184 metal Substances 0.000 abstract description 2
- 150000002739 metals Chemical class 0.000 abstract description 2
- 239000010409 thin film Substances 0.000 abstract 4
- 239000004215 Carbon black (E152) Substances 0.000 abstract 2
- 239000011195 cermet Substances 0.000 abstract 1
- 238000000354 decomposition reaction Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 description 10
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- -1 ethylene, propylene Chemical group 0.000 description 6
- 238000003786 synthesis reaction Methods 0.000 description 6
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 5
- 238000001069 Raman spectroscopy Methods 0.000 description 5
- 239000003208 petroleum Substances 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 230000036470 plasma concentration Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 150000001298 alcohols Chemical class 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- 239000003921 oil Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000002244 precipitate Substances 0.000 description 3
- 238000004611 spectroscopical analysis Methods 0.000 description 3
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- 229910009043 WC-Co Inorganic materials 0.000 description 2
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 2
- 239000012965 benzophenone Substances 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- 239000012776 electronic material Substances 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 238000002309 gasification Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000012770 industrial material Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 150000002576 ketones Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- FDPIMTJIUBPUKL-UHFFFAOYSA-N pentan-3-one Chemical compound CCC(=O)CC FDPIMTJIUBPUKL-UHFFFAOYSA-N 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- KDYFGRWQOYBRFD-UHFFFAOYSA-N succinic acid Chemical compound OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 2
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- LVZWSLJZHVFIQJ-UHFFFAOYSA-N Cyclopropane Chemical compound C1CC1 LVZWSLJZHVFIQJ-UHFFFAOYSA-N 0.000 description 1
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 1
- 239000001293 FEMA 3089 Substances 0.000 description 1
- XOBKSJJDNFUZPF-UHFFFAOYSA-N Methoxyethane Chemical compound CCOC XOBKSJJDNFUZPF-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- IKHGUXGNUITLKF-XPULMUKRSA-N acetaldehyde Chemical compound [14CH]([14CH3])=O IKHGUXGNUITLKF-XPULMUKRSA-N 0.000 description 1
- KXKVLQRXCPHEJC-UHFFFAOYSA-N acetic acid trimethyl ester Natural products COC(C)=O KXKVLQRXCPHEJC-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000001299 aldehydes Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 125000000732 arylene group Chemical group 0.000 description 1
- 239000001273 butane Substances 0.000 description 1
- 150000001722 carbon compounds Chemical class 0.000 description 1
- 229910002090 carbon oxide Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- HWEQKSVYKBUIIK-UHFFFAOYSA-N cyclobuta-1,3-diene Chemical compound C1=CC=C1 HWEQKSVYKBUIIK-UHFFFAOYSA-N 0.000 description 1
- AWWXDZBVBKKKHZ-UHFFFAOYSA-N cyclobutane cyclopentane Chemical compound C1CCC1.C1CCCC1 AWWXDZBVBKKKHZ-UHFFFAOYSA-N 0.000 description 1
- 239000010727 cylinder oil Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 150000001993 dienes Chemical class 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- LRMHFDNWKCSEQU-UHFFFAOYSA-N ethoxyethane;phenol Chemical compound CCOCC.OC1=CC=CC=C1 LRMHFDNWKCSEQU-UHFFFAOYSA-N 0.000 description 1
- 239000000295 fuel oil Substances 0.000 description 1
- 239000003502 gasoline Substances 0.000 description 1
- 239000012208 gear oil Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000010649 ginger oil Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000003350 kerosene Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 230000029052 metamorphosis Effects 0.000 description 1
- WSFSSNUMVMOOMR-NJFSPNSNSA-N methanone Chemical compound O=[14CH2] WSFSSNUMVMOOMR-NJFSPNSNSA-N 0.000 description 1
- VNKYTQGIUYNRMY-UHFFFAOYSA-N methoxypropane Chemical compound CCCOC VNKYTQGIUYNRMY-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 1
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 1
- 239000003345 natural gas Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000010665 pine oil Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000001384 succinic acid Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 235000012976 tarts Nutrition 0.000 description 1
- 125000000383 tetramethylene group Chemical group [H]C([H])([*:1])C([H])([H])C([H])([H])C([H])([H])[*:2] 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野コ
この発明はダイヤモンドの合成方法に関し、さらに詳し
く言うと、たとえば各種保護膜、光学用材料、電子材料
、化学工業材料などに広く利用することができ、また、
特に切削工具等の被覆材料として好適に用いることので
きるダイヤモンドの合成方法に関する。[Detailed Description of the Invention] [Industrial Field of Application] This invention relates to a method for synthesizing diamond, and more specifically, it can be widely used in various protective films, optical materials, electronic materials, chemical industrial materials, etc. I can do it, and also.
In particular, the present invention relates to a method for synthesizing diamond, which can be suitably used as a coating material for cutting tools and the like.
[従来技術と発明が解決しようとする課題]近年、ダイ
ヤモンドの合成技術が著しい発展を遂げつつあり、これ
までに、スパッタリング蒸着法、イオンビーム蒸着法1
分子線エビタ午シャル法等のPVD法や熟フィラメント
法、マイクロ波無極放電法等のCVD法などの種々の合
成技術が知られるに至っている。[Prior art and problems to be solved by the invention] In recent years, diamond synthesis technology has been making remarkable progress, and so far, sputtering vapor deposition method, ion beam vapor deposition method 1
Various synthesis techniques have come to be known, such as PVD methods such as the molecular beam plasma method, CVD methods such as the mature filament method, and the microwave non-electrodischarge method.
また、これらの合成技術の中でも、CVD法、特にプラ
ズマCVD法は、ダイヤモンドの析出速度が速く、また
比較的に低温度領域でダイヤモンドを合成することがで
き、さらには良質のダイヤモンドを得ることのできる合
成方法として注目されている。Among these synthesis techniques, the CVD method, especially the plasma CVD method, has a fast diamond precipitation rate, can synthesize diamond at a relatively low temperature, and is also difficult to obtain high-quality diamond. It is attracting attention as a possible synthesis method.
ところで、従来のプラズマCVD法によるダイヤモンド
の合成方法は、基材上にダイヤモンドの形成を行ったあ
と、直ちにプラズマ励起手段の出力を停止するものであ
った。By the way, in the conventional diamond synthesis method using the plasma CVD method, the output of the plasma excitation means is immediately stopped after diamond is formed on the base material.
しかしながら、前記励起手段出力の停止Eは、基材の急
激な冷却を招き、ダイヤモンド膜と基材との密着性を妨
げるという不都合を有していた。However, stopping E of the output of the excitation means has the disadvantage of causing rapid cooling of the base material and impairing the adhesion between the diamond film and the base material.
そのことから、たとえば切削工具等の保護、Sとして前
記ダイヤモンド膜を用いた場合には、耐用時間が著しく
短いという不都合を有していた。For this reason, when the diamond film is used as S to protect cutting tools, for example, there is a disadvantage that the service life is extremely short.
そこで、かかる不都合を解消すべく、基材に表面処理を
施す技術や、ダイヤモンド膜の形成後に電子線、紫外線
等を照射する技術等が報告されてはいるが、これらの技
術は1合成工程を煩雑にして製造コストを高めるばかり
でなく、未だ密着性も充分なものではなかった。Therefore, in order to solve this problem, there have been reports of techniques such as applying surface treatment to the base material and techniques of irradiating electron beams, ultraviolet rays, etc. after forming the diamond film, but these techniques require only one synthesis step. Not only is this complicated and increases the manufacturing cost, but also the adhesion is not yet sufficient.
この発明は、前記π情に基いてなされたものである。This invention was made based on the above-mentioned π information.
この発明の目的は、プラズマCVD法t−用いて、簡便
な合成工程により、しかも低コストで、基材との密着性
に優れたダイヤモンドの合成方法を提供することにある
。An object of the present invention is to provide a method for synthesizing diamond using a plasma CVD method using a simple synthesis process, at low cost, and with excellent adhesion to a base material.
[前記課題を解決するための手段]
前記課題を解決するための請求項1に記載の発明は、プ
ラズマCVD法を利用して、炭素源ガスを含有する原料
ガスを励起して得られるガスを基材に接触し、基材上に
ダイヤモンドを合成するダイヤモンドの合成方法におい
て、ダイヤモンドを基材に析出せしめたのちに、前記基
材をプラズマ状席の雰囲気に接触させながら冷却するこ
とを特徴とするダイヤモンドの合成方法である。[Means for solving the above problem] The invention according to claim 1 for solving the above problem uses a plasma CVD method to excite a raw material gas containing a carbon source gas to generate a gas. A method for synthesizing diamond in which diamond is synthesized on the substrate by contacting the substrate, characterized in that after the diamond is deposited on the substrate, the substrate is cooled while being brought into contact with an atmosphere of a plasma-like atmosphere. This is a method of synthesizing diamonds.
請求項2に記載の発明は、前記冷却を炭素源ガスの供給
を遮断して行うことを特徴とする請求項1に記載のダイ
ヤモンドの合成方法である。The invention according to claim 2 is the diamond synthesis method according to claim 1, characterized in that the cooling is performed by cutting off the supply of carbon source gas.
以丁、この発明につき詳細に説明する。This invention will now be described in detail.
この発明においては、まずプラズマCVD法を用いて原
料ガスを励起し、その原料ガスを基材に接触させること
により、基材上にダイヤモンドを析出せしめる。In this invention, first, a plasma CVD method is used to excite a raw material gas, and the raw material gas is brought into contact with a base material, thereby depositing diamond on the base material.
前記プラズマCVD法としては、特に制限はなく、たと
えば、高周波プラズマCVD法、直流プラズマCVD法
、マイクロ波プラズマCVD法、電子サイクロトロン共
鳴励起プラズマCVD法等が挙げられる。The plasma CVD method is not particularly limited and includes, for example, a high frequency plasma CVD method, a direct current plasma CVD method, a microwave plasma CVD method, an electron cyclotron resonance excited plasma CVD method, and the like.
前記原料ガスとしては、公知のものを好適に使用するこ
とができ、たとえば炭素源ガスと水素ガスとの混合ガス
等を挙げることができる。As the raw material gas, known gases can be suitably used, such as a mixed gas of carbon source gas and hydrogen gas.
また、所望により、前記原料ガスとともに、不活性ガス
等のギヤリヤーガスを用いることもできる。Further, if desired, a gear gas such as an inert gas may be used together with the raw material gas.
前記炭素源ガスとしては、各種炭化水素、含酸素化合物
、含窒素化合物等のガスを使用することがでJる。As the carbon source gas, gases such as various hydrocarbons, oxygen-containing compounds, nitrogen-containing compounds, etc. can be used.
炭化水素化合物としては、例えばメタン、エタン、プロ
パン、ブタン等のパラフィン系炭化水素:エチレン、プ
ロピレン、ブチレン等のすレフイン系炭化水素;アセチ
レン、アリレン等のアセチレン系炭化水素:ブタジェン
等のジオレフィン系炭化水素;シクロプロパン、シクロ
ブタンシクロペンタン、シクロヘキサン等の脂環式炭化
水素;シクロブタジェン、ベンゼン、トルエン、キシレ
ン、ナフタレン等の芳香族炭化水素を挙げることができ
る。Examples of hydrocarbon compounds include paraffinic hydrocarbons such as methane, ethane, propane, and butane; solenoid hydrocarbons such as ethylene, propylene, and butylene; acetylenic hydrocarbons such as acetylene and arylene; diolefins such as butadiene; Hydrocarbons; alicyclic hydrocarbons such as cyclopropane, cyclobutanecyclopentane and cyclohexane; aromatic hydrocarbons such as cyclobutadiene, benzene, toluene, xylene and naphthalene.
含酸素化合物としては、例えばアセトン、ジエチルケト
ン、ベンゾフェノン等のケトン類−;メタノール、エタ
ノール、プロパツール、ブタノール等のアルコール類:
メチルエーテル、エチルエーテル、メチルエチルエーテ
ル、メチルプロピルエーテル、フェノールエーテル、ジ
オキサン等のエーテル類;ホルムアルデヒド、アセトア
ルデヒド、ヘンズアルデヒド等のアルデヒド類;酢酸、
プロピオン酸、コハク酸等の有機酸類:酢酸メチル、酢
酸エチル等の酸エステル類:エチレングリコール、ジエ
チレングリコール等の二価アルコール類ニー酸化炭素、
二酸化炭素等を挙げることができる。Examples of oxygen-containing compounds include ketones such as acetone, diethyl ketone, and benzophenone; alcohols such as methanol, ethanol, propatool, and butanol;
Ethers such as methyl ether, ethyl ether, methyl ethyl ether, methyl propyl ether, phenol ether, dioxane; aldehydes such as formaldehyde, acetaldehyde, henzaldehyde; acetic acid,
Organic acids such as propionic acid and succinic acid; Acid esters such as methyl acetate and ethyl acetate; Dihydric alcohols such as ethylene glycol and diethylene glycol;
Examples include carbon dioxide.
含窒素化合物としては、例えばトリメチルアミン、トリ
エチルアミンなどのアミン類等を挙げることができる。Examples of the nitrogen-containing compound include amines such as trimethylamine and triethylamine.
また、炭素源として、単体ではないが、消防法に規定さ
れる第4類危険物;ガソリンなどの第1石油Xrt、ケ
ロシン、テレピン油、しょう脳油、松根油などの第2石
油類、重油などの第3石油類、ギヤー油、シリンダー油
などの第4石油類などをも使用することかでさる。また
前記各種の炭素化合物を混合して使用することもできる
。In addition, as a carbon source, although not a single substance, Class 4 dangerous substances stipulated in the Fire Service Act; 1st petroleum XRT such as gasoline, 2nd petroleum such as kerosene, turpentine oil, ginger oil, pine oil, heavy oil It is also possible to use tertiary petroleum oils such as tertiary oils, and tertiary petroleum oils such as gear oil and cylinder oil. It is also possible to use a mixture of the various carbon compounds mentioned above.
これらの炭素源の中でも、常温で気体または蒸気圧の高
いメタン、エタン、プロパン等のパラフィン系炭化水z
等、アセトン、ベンゾフェノンなどのケトン類、メタノ
ール、エタノール等のアルコール類、−酸化炭素、二酸
化炭素ガス等の含酸素化合物等が好ましい。Among these carbon sources, paraffinic hydrocarbons such as methane, ethane, and propane, which are gaseous or have high vapor pressure at room temperature,
etc., ketones such as acetone and benzophenone, alcohols such as methanol and ethanol, and oxygen-containing compounds such as carbon oxide and carbon dioxide gas.
前記水素ガスとしては、特に制限がなく、たとえば石油
類のガス化、天然ガス、水性ガスなどの変成、水の電解
、鉄と水蒸気との反応1石炭の完全ガス化などにより得
られるものを充分に精製したものを用いることができる
。There are no particular restrictions on the hydrogen gas, and hydrogen gas obtained, for example, by gasification of petroleum, metamorphosis of natural gas, water gas, etc., electrolysis of water, reaction between iron and steam, complete gasification of coal, etc. is sufficient. It can be used after being purified.
前記炭素源ガスと前記水素との混合比は、通常、前記炭
素源ガスと前記水素との合計流量に対して前記炭素源ガ
スの流量が081モル%以上、好ましくは0.1−90
モル%、さらに好ましくは0.2〜80モル%である。The mixing ratio of the carbon source gas and the hydrogen is usually such that the flow rate of the carbon source gas is 081 mol % or more, preferably 0.1-90 mol % relative to the total flow rate of the carbon source gas and hydrogen.
It is mol%, more preferably 0.2 to 80 mol%.
前記混合ガス中の炭素源ガスの流量が0.1モル%より
も少ないとダイヤモンドが生成しなかったり、ダイヤモ
ンドがたとえ生成してもその堆積速度が著しく小さい。If the flow rate of the carbon source gas in the mixed gas is less than 0.1 mol %, diamond may not be produced, or even if diamond is produced, its deposition rate is extremely low.
前記水素は、励起されることにより原子状水素を形成す
る。The hydrogen forms atomic hydrogen by being excited.
この原子状水素は、ダイヤモンドの析出と同時に析出す
る黒鉛構造の炭素等の非ダイヤモンドを除去する作用を
有する。This atomic hydrogen has the effect of removing non-diamonds such as graphite-structured carbon that precipitates at the same time as diamond precipitates.
前記基材としては、この発明の目的を阻害しない限り、
特に制限はなく、たとえばシリコン、鉄、アルミニウム
、チタン、タングステン、モリブデン、コバルト、ゲル
マニウムおよびクロムなどの金属、これらの酸化物、窒
化物および炭化物、これらの合金、A 1203−Fe
系、 Tie−11i系。As the base material, as long as it does not impede the purpose of this invention,
There are no particular limitations, and examples include metals such as silicon, iron, aluminum, titanium, tungsten, molybdenum, cobalt, germanium, and chromium, their oxides, nitrides, and carbides, their alloys, A 1203-Fe
series, Tie-11i series.
Tie−co系および84C−Fe系等のサーメットな
らびに各種セラミックス等を挙げることができる。Examples include Tie-co type and 84C-Fe type cermets and various ceramics.
また、基材の形状も特に制限はなく、たとえば切削工具
のチップ等も好適に用いることができる。Further, the shape of the base material is not particularly limited, and for example, a tip of a cutting tool or the like can be suitably used.
この発明の方法においては、以下の条件下に反応が進行
して、前記基材上にダイヤモンドが析出する。In the method of this invention, the reaction proceeds under the following conditions, and diamond is deposited on the base material.
すなわち、前記基材の表面の温度は1通常、400℃〜
1.200℃、好ましぐは50C℃〜1,100℃であ
る。That is, the temperature of the surface of the base material is usually 400°C to
1.200°C, preferably 50°C to 1,100°C.
この温度が400℃より低い場合には、ダイヤモンドの
堆積速度が遅くなったり、非ダイヤモンド成分を多量に
含んだ膜を形成することがある。If this temperature is lower than 400° C., the diamond deposition rate may be slow or a film containing a large amount of non-diamond components may be formed.
一方、1.200℃より高い場合には、基材上に堆請し
たダイヤモンドがエツチングにより削られてしまい、堆
積速度の向上が見られないことがある。On the other hand, if the temperature is higher than 1.200°C, the diamond deposited on the base material may be etched away, and no improvement in the deposition rate may be observed.
ダシ圧力は、通常、10−’−103tart、好まし
くは1〜760 torrである0反応圧力が1O−3
torrよりも低い場合には、ダイヤモンドの堆積速度
が遅くなったり、ダイヤモンドが析出しなくなったりす
ることがある。The stock pressure is usually 10-'-103 tart, preferably 1 to 760 torr, and the reaction pressure is 10-3
If it is lower than torr, the diamond deposition rate may become slow or diamond may not precipitate.
一方、+03torrより高くしてもそれに相当する効
果が得られないことがある。On the other hand, even if it is made higher than +03 torr, a corresponding effect may not be obtained.
反応時の前記混合ガスの合計流量は、通常、1〜t、o
oosccx 、好ましくは10〜20O5CCF4で
ある。The total flow rate of the mixed gas during the reaction is usually 1 to t, o.
oosccx, preferably 10-20O5CCF4.
つぎに、このようにして前記基材上に形成されたダイヤ
モンドは、特定の条件で冷却される。Next, the diamond thus formed on the substrate is cooled under specific conditions.
この発明の重要な点は、ダイヤモンドを形成せしめた前
記基材(以下、ダイヤモンド付基材ということがある。An important point of this invention is that the base material on which diamonds are formed (hereinafter sometimes referred to as a diamond-attached base material).
)をプラズマ状態の雰囲気に接触させながら冷却するこ
とである。) is cooled while being brought into contact with an atmosphere in a plasma state.
すなわち、ダイヤモンド付基材を、プラズマ状態の雰囲
気に接触させながら冷却することは、基材の温度が急激
に低下するのを防止する作用を有する。That is, cooling the diamond-coated base material while bringing it into contact with an atmosphere in a plasma state has the effect of preventing the temperature of the base material from dropping rapidly.
前記冷却の速度としては、通常はioo℃/分以下、好
ましくは50℃/分以下、さらに好ましくは20℃/分
以下である。The cooling rate is usually 100° C./min or less, preferably 50° C./min or less, and more preferably 20° C./min or less.
なお前記冷却速度が100℃/分を超えると、ダイヤモ
ンドと基材との密着性が低下することがある。Note that if the cooling rate exceeds 100° C./min, the adhesion between the diamond and the base material may decrease.
前記ダイヤモンド付基材をプラズマ状態の雰囲気に接触
させながら冷却する手段としては、ダイヤモンド付基材
をプラズマ状態の雰囲気に接触させながら冷却すること
ができれば、特に制限するものではなく、たとえば、プ
ラズマ発生手段の出力を降下せしめる方法、プラズマ状
態の雰囲気の中心部から前記ダイヤモンド付基材を離し
ていく方法等を好適に採用することができる。なお、こ
の場合、必要により炭素源ガスの供給を遮断することも
できる。The means for cooling the diamond-coated base material while contacting the plasma-state atmosphere is not particularly limited as long as the diamond-coated base material can be cooled while contacting the plasma-state atmosphere; for example, plasma generation A method of lowering the output of the means, a method of separating the diamond-attached substrate from the center of the atmosphere in a plasma state, etc. can be suitably employed. In this case, the supply of carbon source gas can also be cut off if necessary.
前記のプラズマ発生手段の出力を降下せしめる条件を以
下に例示する。The conditions for reducing the output of the plasma generating means described above are illustrated below.
この方法は、プラズマ発生手段の出力の降下速度を適宜
に調整し、冷却速度を前記範囲に制御するものである。In this method, the rate of decrease in the output of the plasma generating means is appropriately adjusted to control the cooling rate within the above range.
前記出力の降下速度は、前記冷却を終了するまで一定値
をとる必要はなく、冷却速度を前記範囲にすることがで
きれば、適宜に変化せしめてもよい。The rate of fall of the output does not need to be constant until the cooling is finished, and may be changed as appropriate as long as the cooling rate can be kept within the range.
前記冷却時の原料ガスの組成およびyi、iは、請求項
1に記載の発明においては、前記反応時の組成および流
量と同様に設定することができる。In the invention according to claim 1, the composition of the raw material gas during the cooling and yi, i can be set in the same manner as the composition and flow rate during the reaction.
請求項2に記載の発明においては、前記原料ガスのうち
、炭素源ガスの供給を停止する。In the invention according to claim 2, the supply of carbon source gas among the raw material gases is stopped.
また、炭素源ガス以外の原料ガスは、前記反応時の流量
と同様に設定することができる。Further, the flow rate of the raw material gas other than the carbon source gas can be set in the same manner as the flow rate during the reaction.
冷却工程で炭素源ガスの供給を停止することは、前記基
材上に黒鉛構造の炭素等の非ダイヤモンドを析出するの
を防止する作用を有する。Stopping the supply of the carbon source gas in the cooling process has the effect of preventing non-diamonds such as graphite-structured carbon from being deposited on the base material.
このようにして、2si材表面温度が170〜400℃
、好ましくは、200〜300℃となるまで、前記冷却
速度で前記のプラズマ発生手段の出力を降下せしめ前記
冷却工程を終了する。In this way, the surface temperature of the 2si material is 170 to 400℃.
Preferably, the output of the plasma generating means is decreased at the cooling rate until the temperature reaches 200 to 300°C, and the cooling step is completed.
前記プラズマ状態の雰囲気の中心部からダイヤモンド付
基材を離してい〈方法の条件を以下に例示する。The diamond-attached substrate was separated from the center of the atmosphere in the plasma state.The conditions of the method are illustrated below.
この方法は、第1図に示すように、前記中心部、すなわ
ちプラズマ濃度の最も高い位置lから、ダイヤモンド付
基材3を、たとえばプラズマ濃度の低い位置2へ移動せ
しめて冷却する方法である。In this method, as shown in FIG. 1, the diamond-attached substrate 3 is moved from the center, that is, the position 1 where the plasma concentration is highest, to a position 2 where the plasma concentration is low, for example, and cooled.
この方法は、前記冷却速度の制御を前記移動速度を適宜
にFA整し、冷却速度を前記範囲に制御するものである
。In this method, the cooling rate is controlled by adjusting the moving speed to an appropriate FA, thereby controlling the cooling rate within the range described above.
前記移動速度は、前記冷却を終了するまで一定値をとる
必要はなく、冷却速度を前記範囲とすることができれば
、適宜に変化せしめてもよい。The moving speed does not need to take a constant value until the cooling is finished, and may be changed as appropriate as long as the cooling speed can be kept within the above range.
前記冷却時の原料ガスの組成およびfI!、量は、前記
プラズマ発生手段の出力を降下せしめる方法と同様であ
る。The composition of the raw material gas during cooling and fI! , the amount is similar to the method for reducing the output of the plasma generating means.
このようにして、基材表面温度が100〜400℃、好
ましくは、200〜300℃となるまで、冷却速度が前
記範囲となるようにダイヤモンド付基材3を移動せしめ
前記冷却工程を終了する。In this way, the diamond-attached substrate 3 is moved so that the cooling rate falls within the above range until the substrate surface temperature reaches 100 to 400°C, preferably 200 to 300°C, and the cooling step is completed.
このような冷却工程を経たダイヤモンド膜は、基材との
密着性に極めて優れている。The diamond film that has undergone such a cooling process has extremely excellent adhesion to the base material.
なお、得られたダイヤモンド膜は1表面に非ダイヤモン
ド等が付着している場合には、必要に応じてそれを除去
し、たとえば切削工具の表面保護膜などの各種保:a膜
、光学用材料、電子材料、化学工業材料などに好適に利
用することができる。In addition, if the obtained diamond film has non-diamond etc. attached to the surface, it is removed as necessary and used for various protective films such as surface protection films of cutting tools, a-films, and optical materials. , electronic materials, chemical industrial materials, etc.
[実施例]
次いで、この発明の実施例および比較例を示し、この発
明についてさらに具体的に説明する。[Examples] Next, Examples and Comparative Examples of the present invention will be shown to further specifically explain the present invention.
(実施例1) 基材として、WC−Coチップ(切削工具)を用いた。(Example 1) A WC-Co chip (cutting tool) was used as the base material.
この−〇−Goチップを反応室内に設置したのちに、反
応室内の圧力40torr、 l[ニーGoチップ温度
850℃の条件下に、周波数2.45GHzのマイクロ
波電源の出力を400Wに設定した。After installing this -0-Go chip in the reaction chamber, the output of the microwave power source with a frequency of 2.45 GHz was set to 400 W under the conditions that the pressure in the reaction chamber was 40 torr and the Go chip temperature was 850°C.
次に、反応室内に、メタンガスをFItt tsccm
、水素ガスを流量99 scc層の割合で導入し、マイ
クロ波プラズマCVD法によりダイヤモンドの合成を2
時間行って、前記温度に制御した一C−Goチップ表面
に堆積物を形成せしめた。Next, methane gas was introduced into the reaction chamber at FItt tsccm.
, hydrogen gas was introduced at a flow rate of 99 scc layer, and diamond synthesis was carried out by microwave plasma CVD method.
For a certain period of time, a deposit was formed on the surface of the C-Go chip, which was controlled at the above temperature.
ついで、前記マイクロ波電源の出力を5分ごとに第2表
に示すように降下せしめることにより前記WC−Goチ
ップを冷却した。The WC-Go chip was then cooled by decreasing the output of the microwave power supply every 5 minutes as shown in Table 2.
得られた堆積物について、ラマン分光分析を行なったと
ころ、1333cm−’付近にダイヤモンドに起因する
シャープなピークが、また1200〜1700cm−1
にわたる非ダイヤモンド成分に起因するブロードなピー
クがわずかに見られた。When the obtained deposit was subjected to Raman spectroscopy, a sharp peak caused by diamond was observed at around 1333 cm-1, and a sharp peak at 1200-1700 cm-1 was observed.
A few broad peaks due to non-diamond components were observed.
このようにして得られたダイヤモンド膜のコーティング
状態を走査型電子m微鏡で観察し、また基材とダイヤモ
ンド膜との密着性をひっかき試験により評価を行った。The coating state of the diamond film thus obtained was observed using a scanning electron microscope, and the adhesion between the substrate and the diamond film was evaluated by a scratch test.
結果を第1表に示す。The results are shown in Table 1.
(実施例2)
実施例1と同様に、’dC−Goチップ表面に堆積物を
形成せしめた。(Example 2) As in Example 1, a deposit was formed on the surface of a 'dC-Go chip.
ついで第3表に示すように、5分ごとに’dc−C。Then 'dc-C every 5 minutes as shown in Table 3.
チップをプラズマの中心部から移動して’dC−G。Move the tip away from the center of the plasma and do 'dC-G.
チップを冷却した。The chips were cooled.
得られた堆積物について、ラマン分光分析を行なったと
ころ、1333c[1付近にダイヤモンドに起因するシ
ャープなピークが、また1200〜1700Cm”にわ
たる非ダイヤモンド成分に起因するブロードなピークが
わずかに見られた。When the obtained deposit was subjected to Raman spectroscopic analysis, a sharp peak due to diamond was observed near 1333c[1, and a slight broad peak due to non-diamond components ranging from 1200 to 1700 cm'' was observed. .
なお、得られたダイヤモンド膜につき実施例1と同様に
密着性の評価を行った。The adhesion of the obtained diamond film was evaluated in the same manner as in Example 1.
結果を第1表に示す。The results are shown in Table 1.
(実施例3)
冷却工程で、反応容器へのメタンガスの供給を停止した
ほかは、実施例1と同様に一〇−Goチップ表面に堆積
物を形成せしめ、実施例1と同様に冷却を行った。(Example 3) Deposits were formed on the surface of the 10-Go chip in the same manner as in Example 1, except that the supply of methane gas to the reaction vessel was stopped in the cooling process, and cooling was performed in the same manner as in Example 1. Ta.
得られた堆積物について、ラマン分光分析を行なったと
ころ、1333csi付近にダイヤモンドに起因するピ
ークのみが見られ、前記堆積物がダイヤモンドであるこ
とを確認した。When the obtained deposit was subjected to Raman spectroscopic analysis, only a peak due to diamond was observed around 1333 csi, and it was confirmed that the deposit was diamond.
また、走査型電子w4微鏡により前記堆積物の表面状!
息を観察したところ、非ダイヤモンド成分のほとんどな
いダイヤモンド膜であることが確認された。In addition, the surface condition of the deposit was measured using a scanning electron W4 microscope.
Observation of the breath revealed a diamond film with almost no non-diamond components.
なお、得られたダイヤモンド膜につき実施例1と同様に
密着性の評価を行った。The adhesion of the obtained diamond film was evaluated in the same manner as in Example 1.
結果を第1表に示す。The results are shown in Table 1.
(比較例1)
実施例1と同様にWC−Coチップ表面に堆積物を形成
せしめたのちに、マイクロ波電源の出力を直ちに停止し
た。(Comparative Example 1) After deposits were formed on the surface of the WC-Co chip in the same manner as in Example 1, the output of the microwave power source was immediately stopped.
なお、前記出力の停止から1分経過した前記’dc−C
oチー2プの温度は、400℃であった。Note that the 'dc-C after 1 minute has elapsed since the output stopped.
The temperature of the o-chip was 400°C.
得られた堆積物について、ラマン分光分析を行なったと
ころ、ラマン散乱スペクトルの1333c■付近にダイ
ヤモンドに起因するヒ:−りが見られ、前記堆積物がダ
イヤモンドであることを確認した。When the obtained deposit was subjected to Raman spectroscopic analysis, a crack caused by diamond was observed near 1333c in the Raman scattering spectrum, and it was confirmed that the deposit was diamond.
なお、得られたダイヤモンド膜につき実施例1と同様に
密着性の評価を行った。The adhesion of the obtained diamond film was evaluated in the same manner as in Example 1.
結果を第1表に示す。The results are shown in Table 1.
第1表
第2表
[発明の効果]
この発明によると、ダイヤモンド膜と基材との密着性を
著しく高めることができ、また請求項2に2佐の発明に
よると、これに加えて非ダイヤモンド成分をほとんど含
まないダイヤモンド膜を形成することができる。Table 1 Table 2 [Effects of the Invention] According to this invention, the adhesion between the diamond film and the base material can be significantly improved. A diamond film containing almost no components can be formed.
第1図は、ダイヤモンドを析出せしめた基材をプラズマ
状態の雰囲気に接触させながら冷却する方法のうち、プ
ラズマ状態の雰囲気の中心部からダイヤモンドを析出せ
しめた基材を離していく方法を示す一概念図である。
i−−・
2 ・ e ・
3 ・ l1e
4 ・ l111
511 ・ 拳
61 ・
プラズマ濃度の最も高い位t
プラズマ濃度の最も低い位置
ダイヤモンド膜材基材
プラズマ
石英管
導波管
第3表Figure 1 shows one method of cooling a base material on which diamond has been deposited while contacting it with an atmosphere in a plasma state, in which the base material on which diamond has been deposited is separated from the center of an atmosphere in a plasma state. It is a conceptual diagram. i---・ 2 ・ e ・ 3 ・ l1e 4 ・ l111 511 ・ Fist 61 ・ Highest plasma concentration t Lowest plasma concentration Diamond film material base material Plasma quartz tube waveguide Table 3
Claims (2)
する原料ガスを励起して得られるガスを基材に接触し、
基材上にダイヤモンドを合成するダイヤモンドの合成方
法において、ダイヤモンドを基材に析出せしめたのちに
、前記基材をプラズマ状態の雰囲気に接触させながら冷
却することを特徴とするダイヤモンドの合成方法。(1) Utilizing the plasma CVD method, a gas obtained by exciting a raw material gas containing a carbon source gas is brought into contact with the base material,
A method for synthesizing diamond in which diamond is synthesized on a base material, the method comprising: depositing diamond on the base material, and then cooling the base material while bringing it into contact with an atmosphere in a plasma state.
を特徴とする請求項1に記載のダイヤモンドの合成方法
。(2) The diamond synthesis method according to claim 1, wherein the cooling is performed by cutting off the supply of carbon source gas.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20758288A JPH0255297A (en) | 1988-08-22 | 1988-08-22 | Method for synthesizing diamond |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20758288A JPH0255297A (en) | 1988-08-22 | 1988-08-22 | Method for synthesizing diamond |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0255297A true JPH0255297A (en) | 1990-02-23 |
Family
ID=16542144
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20758288A Pending JPH0255297A (en) | 1988-08-22 | 1988-08-22 | Method for synthesizing diamond |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0255297A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02120219A (en) * | 1988-10-31 | 1990-05-08 | Sumitomo Metal Mining Co Ltd | Synthesis of diamond powder |
US7132129B2 (en) * | 2002-03-01 | 2006-11-07 | Stichting Voor De Technische Wetenschappen | Method of forming a diamond coating on an iron-based substrate and use of an iron-based substrate for hosting a CVD diamond coating |
-
1988
- 1988-08-22 JP JP20758288A patent/JPH0255297A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02120219A (en) * | 1988-10-31 | 1990-05-08 | Sumitomo Metal Mining Co Ltd | Synthesis of diamond powder |
US7132129B2 (en) * | 2002-03-01 | 2006-11-07 | Stichting Voor De Technische Wetenschappen | Method of forming a diamond coating on an iron-based substrate and use of an iron-based substrate for hosting a CVD diamond coating |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0288065B1 (en) | Method for synthesis of diamond | |
EP0413834B1 (en) | Diamond-covered member and process for producing the same | |
JP2720384B2 (en) | Coating method with diamond thin film | |
JPH0255297A (en) | Method for synthesizing diamond | |
EP0194652A1 (en) | Coated blade for microtome and method for the preparation thereof | |
JPH0254768A (en) | Member with diamond film and its production | |
JPH02239192A (en) | Synthesis of diamond | |
JPH02188494A (en) | Production of thin film of diamond or the like and device therefor | |
JP2543132B2 (en) | Cemented carbide with diamond thin film and method for producing the same | |
JPH02125874A (en) | Manufacture of thin film of diamonds | |
JP2760837B2 (en) | Diamond coated member and method of manufacturing the same | |
JP2585342B2 (en) | Diamond vapor phase synthesis | |
JPH02239191A (en) | Multilayer diamond film and its production | |
JPH0794081B2 (en) | Hard carbon coated parts | |
JPH01290592A (en) | Method for synthesizing diamond | |
JPH0224005A (en) | Diamond coated tool and manufacture thereof | |
JPH01308896A (en) | Diamond and vapor synthesis thereof | |
JPH02188495A (en) | Production of thin film of diamond or the like | |
JPH01201479A (en) | Diamond coated hydrogen embrittlement metal and its production | |
JPS63140084A (en) | Hard carbon coated parts | |
Marcinauskas et al. | Formation of carbon coatings employing plasma torch from argon-acetylene gas mixture | |
JPH02102197A (en) | Method for synthesizing diamond | |
JPS63134661A (en) | Method for synthesizing high hardness boron nitride | |
Sumitomo et al. | Fabrication of Diamond Films by Microwave Plasma CVD at Low Hydrogen Concentration | |
JPH042556B2 (en) |