JPH0254652B2 - - Google Patents
Info
- Publication number
- JPH0254652B2 JPH0254652B2 JP57033003A JP3300382A JPH0254652B2 JP H0254652 B2 JPH0254652 B2 JP H0254652B2 JP 57033003 A JP57033003 A JP 57033003A JP 3300382 A JP3300382 A JP 3300382A JP H0254652 B2 JPH0254652 B2 JP H0254652B2
- Authority
- JP
- Japan
- Prior art keywords
- mask
- wafer
- photoresist film
- semiconductor wafer
- close contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229920002120 photoresistant polymer Polymers 0.000 claims description 25
- 239000004065 semiconductor Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 9
- 230000002093 peripheral effect Effects 0.000 claims 2
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
Description
〔発明の技術分野〕
この発明は半導体ウエハ（以下ウエハと略称す
る）の感光膜に対する露光方法にかかり、特にウ
エハに蝕刻を施すためにこれに被着された感光膜
にマスクを密接させる方法を改良するものであ
る。
〔発明の技術的背景〕
ウエハの感光膜に対する露光は従来第１図およ
び第２図に示されるように、１方の主面に感光膜
１が被着されたウエハ２を定位されたマスク３に
感光膜を対面させて配置し、ウエハとマスクとの
対向面間を負圧にすると、第２図に示すようにマ
スクが変形し、ウエハの感光膜に密接するように
なつている。
〔背景技術の問題点〕
背景技術によると、ウエハにマスクを密接させ
るとき、両者の接触面間に当初の雰囲気（N2）
ガスおよび露光によつて感光膜から発生する窒素
（N2）ガス等が溜り、密接状態が部分的に悪くな
るという重大な問題があつた。この対策として、
ウエハを定位保持させるためのステージの形状の
改良や、マスクに溝を穿設するなどの手段がとら
れていたが、夫々には次にあげる欠点があつた。
まず、前者はステージ形状の制御の困難とステー
ジの製造に基づく「ばらつき」があり、後者は溝
切りの困難と再現性、コストアップ、およびデフ
エクトの増大などによつてパターニングが悪くな
るなどである。
〔発明の目的〕
この発明は叙上の欠点を改良するウエハの感光
膜に対する露光方法を提供する。
〔発明の概要〕
この発明にかかる半導体ウエハの感光膜の露光
方法は、主面に感光膜が被着されたウエハの該感
光膜にマスクを近接し対面させたのち、ウエハと
マスクの間を負圧にしてマスクをウエハに密接さ
せて露光し、ウエハに写真蝕刻を施すにあたり、
マスクとウエハとの密接をマスクの中央部から順
次周辺に及ぼさせるために感光膜とマスクとの対
向間隔を30±10μｍに設け、マスクとウエハの間
を負圧にしてマスクをウエハに密接させ露光を施
すことを特徴とする。
〔発明の実施例〕
次にこの発明を１実施例につき詳述する。ウエ
ハの感光膜とマスクとの間の密接不良はほとんど
がマスクの中央部に発生する。これは、マスクと
ウエハとの密接が必らずしも中央から始まつて順
次周縁に及ぶ理想の型とはならないためである。
この密接の過程についてさらに解析を試みた結果
を次に述べる。
まず、ウエハの上方に配置されるマスクがその
下方が負圧にされて下方に凸になり、ウエハとの
密接が始まるのであるが、ウエハはこの前処理工
程、例えば酸化、洗浄処理等の影響によつて感光
膜被着面（上面）が凸型にも凹型にもなる。そこ
で、ウエハの前期形状の差も含めてマスクとウエ
ハとの密接開始点を中央にするために、まず、マ
スクとウエハとの間隔をとり上げ、一例の径４イ
ンチのウエハに５インチのマスクを密接させる場
合のマスクの反り量との相関につき側定を行なつ
て第３図に示す結果が得られた。対面させたマス
クとウエハの間隔(d)を０、10、20、30、40μｍの
５段階に設定しその各々の値を横軸に、マスクを
ウエハに密接させる時に生ずるマスクの反りがウ
エハに対して凹、凸のいずれとなり、かつ、生ず
るマスクの反り量を縦軸に夫々とり、相互の相関
を図中に×印で示す。この図からマスクとウエハ
とを対面させた時の両者間の間隔(d)が20μｍ以上
でマスクがウエハに対して凸になる域に入ること
が明らかである。
次に、マスク・ウエハ間隔と解像度との関係を
調べ第４図に示す結果が得られた。この第４図に
よると解像度は4μｍ幅のパターンと3μｍ幅のパ
ターンについて露光し現像後にパターンの抜けを
検査したもので、細い3μｍパターンが占める歩
留りが重要であり、マスク・ウエハ間隔が20μｍ
以上で顕著に良好になつていることがわかる。
次に、マスク・ウエハ間隔と像質（グレード）
との関係を調べ第５図に示す結果が得られた。こ
の像質は一例の微細な方形のパターンを現像後に
行われる顕微鏡検査で検定し、Ａグレードは極め
て明確な方形のもの、Ｂグレードはこれにほぼ準
ずる程度で良品とみなされる方形のもの、Ｃグレ
ードは方形のかどが円く認められ使用に不適なも
の、Ｄグレードは解像されていない程度の不良の
ものである。この結果からマスク・ウエハ間隔が
10μｍ以上が良好であると判定される。
次に「ピツチずれ」の問題につき説明する。
「ピツチずれ」のない正常のパターンを示す第６
図に対し、「ピツチずれ」を生じたパターンが第
７図に示される。そして、側定結果は第８図ない
し第１０図に示されるように、夫々の横軸は「ピ
ツチずれ量」を、縦軸は発生個数（度数）を示
し、結果をまとめると次表の如くなる。
[Technical Field of the Invention] The present invention relates to a method for exposing a photoresist film on a semiconductor wafer (hereinafter abbreviated as wafer), and particularly to a method for bringing a mask into close contact with a photoresist film deposited on a wafer in order to etch the wafer. It is something to improve. [Technical Background of the Invention] Conventionally, as shown in FIGS. 1 and 2, exposure of a photoresist film on a wafer is performed by using a mask 3 in which a wafer 2 having a photoresist film 1 deposited on one main surface is positioned. When the photoresist films are placed facing each other and a negative pressure is applied between the facing surfaces of the wafer and the mask, the mask deforms as shown in FIG. 2 and comes into close contact with the photoresist film of the wafer. [Problems with the background technology] According to the background technology, when a mask is brought into close contact with a wafer, an initial atmosphere (N 2 ) is generated between the contact surfaces of the two.
There was a serious problem in that nitrogen (N 2 ) gas and the like generated from the photoresist film due to gas and exposure accumulated, resulting in poor close contact in some areas. As a countermeasure for this,
Measures have been taken to maintain the wafer in its normal position, such as improving the shape of the stage and drilling grooves in the mask, but each method has the following drawbacks.
First, the former has difficulty controlling the stage shape and "variations" due to stage manufacturing, while the latter has poor patterning due to difficulties in cutting grooves, increased reproducibility, increased costs, and increased defects. . [Object of the Invention] The present invention provides a method for exposing a photoresist film on a wafer, which improves the above-mentioned drawbacks. [Summary of the Invention] A method for exposing a photoresist film on a semiconductor wafer according to the present invention is to bring a mask close to and face the photoresist film of a wafer having a photoresist film adhered to the main surface, and then to expose the photoresist film between the wafer and the mask. When exposing the wafer with a mask in close contact with the wafer under negative pressure, photo-etching the wafer.
In order to bring the mask and wafer into close contact from the center of the mask to the periphery, the distance between the photoresist film and the mask was set at 30±10 μm, and negative pressure was applied between the mask and the wafer to bring the mask into close contact with the wafer. It is characterized by applying light exposure. [Embodiments of the Invention] Next, one embodiment of the present invention will be described in detail. Most of the poor contact between the photoresist film of the wafer and the mask occurs in the center of the mask. This is because the close contact between the mask and the wafer does not necessarily result in an ideal pattern starting from the center and successively extending to the periphery.
The results of an attempt to further analyze this closeness process are described below. First, the mask placed above the wafer is subjected to negative pressure at the bottom, causing it to bulge downward and begin to come into close contact with the wafer. The surface to which the photoresist film is applied (upper surface) can be either convex or concave depending on the shape. Therefore, in order to center the starting point of close contact between the mask and the wafer, including the difference in the initial shape of the wafer, we will first discuss the spacing between the mask and the wafer. The correlation with the amount of warpage of the mask in the case of close contact was determined, and the results shown in FIG. 3 were obtained. The distance (d) between the facing mask and wafer is set to 5 levels: 0, 10, 20, 30, and 40 μm, and each value is plotted on the horizontal axis to calculate the warpage of the mask that occurs when the mask is brought into close contact with the wafer. On the other hand, whether it is concave or convex and the amount of warpage of the mask that occurs is plotted on the vertical axis, and the mutual correlation is indicated by an x mark in the figure. It is clear from this figure that when the distance (d) between the mask and wafer when they face each other is 20 μm or more, the mask enters a region where it becomes convex with respect to the wafer. Next, the relationship between the mask-wafer spacing and resolution was investigated, and the results shown in FIG. 4 were obtained. According to this figure 4, the resolution was determined by exposing a 4 μm wide pattern and a 3 μm wide pattern and inspecting the patterns for omissions after development.
From the above, it can be seen that the situation has improved significantly. Next, mask-wafer spacing and image quality (grade)
The results shown in Figure 5 were obtained by examining the relationship between This image quality is verified by microscopic examination of a fine rectangular pattern after development. A grade is an extremely clear square pattern, B grade is a square pattern that is almost similar to this and is considered to be a good product, C. A grade is a square with rounded corners and is unsuitable for use, and a D grade is a defect such that the image is not resolved. From this result, the mask-wafer spacing is
A value of 10 μm or more is determined to be good. Next, the problem of "pitch deviation" will be explained.
No. 6 showing a normal pattern without “pitch deviation”
FIG. 7 shows a pattern in which a "pitch shift" occurs with respect to the figure. As shown in Figures 8 to 10, the horizontal axis represents the amount of pitch deviation, and the vertical axis represents the number of occurrences (frequency).The results are summarized as shown in the table below. Become.
この発明の方法によればウエハに蝕刻を施すた
めのマスクパターンが高精度にウエハの感光膜に
現像できるので、半導体装置の高密度化に著効を
奏する。
According to the method of the present invention, a mask pattern for etching the wafer can be developed on the photoresist film of the wafer with high precision, and is therefore extremely effective in increasing the density of semiconductor devices.
第１図および第２図は背景技術を説明するため
の露光ヘツド部のいずれも断面図、第３図はマス
ク・ウエハ間隔とマスクの反り量との関係を示す
線図、第４図はマスク・ウエハ間隔とグレードと
の関係を示す線図、第５図はマスク・ウエハ間隔
と解像度との関係を示す線図、第６図ないし第１
０図は「ピツチずれ」にかかり、第６図および第
７図は「ピツチずれ」を説明するためのパターン
の正面図、第８図、第９図および第１０図は夫々
マスク・ウエハ間隔が20、30、40μｍの場合の
「ピツチずれ」の分布を示す線図である。
１……ウエハの感光膜、２……ウエハ、３……
マスク。
1 and 2 are cross-sectional views of the exposure head section for explaining the background technology, FIG. 3 is a diagram showing the relationship between the mask-wafer distance and the amount of warpage of the mask, and FIG. 4 is a mask - Diagram showing the relationship between wafer spacing and grade, Figure 5 is a diagram showing the relationship between mask/wafer spacing and resolution, Figures 6 to 1
Figure 0 shows the "pitch shift", Figures 6 and 7 are front views of the pattern to explain the "pitch shift", and Figures 8, 9 and 10 show the distance between the mask and wafer, respectively. It is a diagram showing the distribution of "pitch shift" in the case of 20, 30, and 40 μm. 1... Photoresist film on wafer, 2... Wafer, 3...
mask.
Claims (1)
ハをマスクと位置合せしたのち前記感光膜とマス
クとを密着させて露光し写真蝕刻する半導体ウエ
ハの感光膜の露光方法において、周縁が支持固定
されたマスクと半導体ウエハとを位置合せし前記
マスクと半導体ウエハの感光膜とを30±10μｍの
間隔で離隔対面させたのち、前記マスクの周縁支
持部と半導体ウエハ周縁部との間隔を変更するこ
となく半導体ウエハの感光膜とマスクとの間を減
圧にし、外圧によりマスクを変形させその中央部
を感光膜側に凸としてその中央部から周縁にかけ
て感光膜に密接させマスクの変形密着状態のまま
露光する半導体ウエハの感光膜の露光方法。1. In a method for exposing a photoresist film of a semiconductor wafer, in which a semiconductor wafer having a photoresist film adhered to one main surface is aligned with a mask, the photoresist film and mask are brought into close contact with each other, and then exposed and photoetched. After aligning the fixed mask and the semiconductor wafer so that the mask and the photoresist film of the semiconductor wafer face each other at a distance of 30±10 μm, the distance between the peripheral edge support portion of the mask and the semiconductor wafer peripheral portion is changed. The pressure is reduced between the photoresist film of the semiconductor wafer and the mask without causing any damage, and the mask is deformed by external pressure so that its center is convex toward the photoresist film and brought into close contact with the photoresist film from the center to its periphery to maintain the deformed and close contact state of the mask. A method of exposing a photoresist film on a semiconductor wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57033003A JPS58151025A (en) | 1982-03-04 | 1982-03-04 | Exposing method of photosensitive film of semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57033003A JPS58151025A (en) | 1982-03-04 | 1982-03-04 | Exposing method of photosensitive film of semiconductor wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58151025A JPS58151025A (en) | 1983-09-08 |
| JPH0254652B2 true JPH0254652B2 (en) | 1990-11-22 |
Family
ID=12374660
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57033003A Granted JPS58151025A (en) | 1982-03-04 | 1982-03-04 | Exposing method of photosensitive film of semiconductor wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58151025A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5368981A (en) * | 1976-12-02 | 1978-06-19 | Mitsubishi Electric Corp | Vacuum contact printing apparatus |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5366070U (en) * | 1976-10-30 | 1978-06-03 |
-
1982
- 1982-03-04 JP JP57033003A patent/JPS58151025A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5368981A (en) * | 1976-12-02 | 1978-06-19 | Mitsubishi Electric Corp | Vacuum contact printing apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58151025A (en) | 1983-09-08 |
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