JPH025309B2 - - Google Patents

Info

Publication number
JPH025309B2
JPH025309B2 JP56174313A JP17431381A JPH025309B2 JP H025309 B2 JPH025309 B2 JP H025309B2 JP 56174313 A JP56174313 A JP 56174313A JP 17431381 A JP17431381 A JP 17431381A JP H025309 B2 JPH025309 B2 JP H025309B2
Authority
JP
Japan
Prior art keywords
region
type
gate
emitter
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56174313A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5874081A (ja
Inventor
Tomooki Hara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP56174313A priority Critical patent/JPS5874081A/ja
Publication of JPS5874081A publication Critical patent/JPS5874081A/ja
Publication of JPH025309B2 publication Critical patent/JPH025309B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/711—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using bipolar transistors as protective elements

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Protection Of Static Devices (AREA)
  • Amplifiers (AREA)
JP56174313A 1981-10-29 1981-10-29 半導体装置 Granted JPS5874081A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56174313A JPS5874081A (ja) 1981-10-29 1981-10-29 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56174313A JPS5874081A (ja) 1981-10-29 1981-10-29 半導体装置

Publications (2)

Publication Number Publication Date
JPS5874081A JPS5874081A (ja) 1983-05-04
JPH025309B2 true JPH025309B2 (enrdf_load_stackoverflow) 1990-02-01

Family

ID=15976462

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56174313A Granted JPS5874081A (ja) 1981-10-29 1981-10-29 半導体装置

Country Status (1)

Country Link
JP (1) JPS5874081A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01262654A (ja) * 1988-04-14 1989-10-19 Toshiba Corp 半導体装置
JP3450297B2 (ja) * 1997-09-30 2003-09-22 インフィネオン テクノロジース アクチエンゲゼルシャフト 静電放電に対して保護するための保護構造体を備えた集積半導体回路
US7026705B2 (en) 2003-02-28 2006-04-11 Renesas Technology Corp. Semiconductor device with surge protection circuit capable of preventing current leakage

Also Published As

Publication number Publication date
JPS5874081A (ja) 1983-05-04

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