JPH0252855B2 - - Google Patents
Info
- Publication number
- JPH0252855B2 JPH0252855B2 JP59122491A JP12249184A JPH0252855B2 JP H0252855 B2 JPH0252855 B2 JP H0252855B2 JP 59122491 A JP59122491 A JP 59122491A JP 12249184 A JP12249184 A JP 12249184A JP H0252855 B2 JPH0252855 B2 JP H0252855B2
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- magnetic field
- torus
- vacuum vessel
- circuit manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 25
- 230000005684 electric field Effects 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 239000002245 particle Substances 0.000 description 21
- 239000000758 substrate Substances 0.000 description 20
- 238000000034 method Methods 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005674 electromagnetic induction Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59122491A JPS611024A (ja) | 1984-06-12 | 1984-06-12 | 半導体回路製造装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59122491A JPS611024A (ja) | 1984-06-12 | 1984-06-12 | 半導体回路製造装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS611024A JPS611024A (ja) | 1986-01-07 |
| JPH0252855B2 true JPH0252855B2 (enrdf_load_stackoverflow) | 1990-11-14 |
Family
ID=14837155
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59122491A Granted JPS611024A (ja) | 1984-06-12 | 1984-06-12 | 半導体回路製造装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS611024A (enrdf_load_stackoverflow) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2524461B2 (ja) * | 1992-03-18 | 1996-08-14 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 高密度プラズマ処理装置 |
| US5505780A (en) * | 1992-03-18 | 1996-04-09 | International Business Machines Corporation | High-density plasma-processing tool with toroidal magnetic field |
| US6150628A (en) * | 1997-06-26 | 2000-11-21 | Applied Science And Technology, Inc. | Toroidal low-field reactive gas source |
| KR101241049B1 (ko) | 2011-08-01 | 2013-03-15 | 주식회사 플라즈마트 | 플라즈마 발생 장치 및 플라즈마 발생 방법 |
-
1984
- 1984-06-12 JP JP59122491A patent/JPS611024A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS611024A (ja) | 1986-01-07 |
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