JPH025058B2 - - Google Patents

Info

Publication number
JPH025058B2
JPH025058B2 JP55143931A JP14393180A JPH025058B2 JP H025058 B2 JPH025058 B2 JP H025058B2 JP 55143931 A JP55143931 A JP 55143931A JP 14393180 A JP14393180 A JP 14393180A JP H025058 B2 JPH025058 B2 JP H025058B2
Authority
JP
Japan
Prior art keywords
bias voltage
type
transistor
sub
inverter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP55143931A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5767332A (en
Inventor
Fujio Masuoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP14393180A priority Critical patent/JPS5767332A/ja
Priority to US06/260,994 priority patent/US4460835A/en
Priority to EP81103606A priority patent/EP0039946B1/en
Priority to DE8181103606T priority patent/DE3162416D1/de
Priority to CA000377457A priority patent/CA1185665A/en
Publication of JPS5767332A publication Critical patent/JPS5767332A/ja
Publication of JPH025058B2 publication Critical patent/JPH025058B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
    • H03K19/09441—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET of the same canal type
    • H03K19/09443—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET of the same canal type using a combination of enhancement and depletion transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
JP14393180A 1980-05-13 1980-10-15 Semiconductor integrated circuit device Granted JPS5767332A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP14393180A JPS5767332A (en) 1980-10-15 1980-10-15 Semiconductor integrated circuit device
US06/260,994 US4460835A (en) 1980-05-13 1981-05-06 Semiconductor integrated circuit device with low power consumption in a standby mode using an on-chip substrate bias generator
EP81103606A EP0039946B1 (en) 1980-05-13 1981-05-11 Semiconductor integrated circuit device
DE8181103606T DE3162416D1 (en) 1980-05-13 1981-05-11 Semiconductor integrated circuit device
CA000377457A CA1185665A (en) 1980-05-13 1981-05-13 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14393180A JPS5767332A (en) 1980-10-15 1980-10-15 Semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS5767332A JPS5767332A (en) 1982-04-23
JPH025058B2 true JPH025058B2 (forum.php) 1990-01-31

Family

ID=15350404

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14393180A Granted JPS5767332A (en) 1980-05-13 1980-10-15 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS5767332A (forum.php)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4535259A (en) * 1982-06-18 1985-08-13 Seeq Technology, Inc. Sense amplifier for use with a semiconductor memory array
JP5015029B2 (ja) * 2007-03-09 2012-08-29 パナソニック株式会社 昇圧回路に用いられる電流制御回路

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5717380B2 (forum.php) * 1974-02-13 1982-04-10
JPS5241175B2 (forum.php) * 1974-05-09 1977-10-17
JPS5270741A (en) * 1975-12-09 1977-06-13 Mitsubishi Electric Corp Mos logical circuit
JPS53121563A (en) * 1977-03-31 1978-10-24 Seiko Instr & Electronics Ltd Driving circuit

Also Published As

Publication number Publication date
JPS5767332A (en) 1982-04-23

Similar Documents

Publication Publication Date Title
US6020778A (en) Transmission gate including body effect compensation circuit
US7928759B2 (en) Low power consumption MIS semiconductor device
US4460835A (en) Semiconductor integrated circuit device with low power consumption in a standby mode using an on-chip substrate bias generator
JP3079515B2 (ja) ゲ−トアレイ装置及び入力回路及び出力回路及び降圧回路
US20030016075A1 (en) Semiconductor device including interface circuit, logic circuit, and static memory array having transistors of various threshold voltages and being supplied with various supply voltages
CA2000995C (en) Wordline voltage boosting circuits for complementary mosfet dynamic memories
JPH0578211B2 (forum.php)
KR100471737B1 (ko) 출력회로,누설전류를감소시키기위한회로,트랜지스터를선택적으로스위치하기위한방법및반도체메모리
JPH06216346A (ja) 半導体装置
US9209797B2 (en) Semiconductor device
US4446536A (en) Complementary metal oxide semiconductors address drive circuit
US20020113769A1 (en) Level shift circuit and semiconductor device using the same
JP3105512B2 (ja) Ｍｏｓ型半導体集積回路
JPH025058B2 (forum.php)
JP3499578B2 (ja) 半導体集積回路
US6137342A (en) High efficiency semiconductor substrate bias pump
JP3865283B2 (ja) 半導体集積回路
US7570106B2 (en) Substrate voltage generating circuit with improved level shift circuit
GB2334391A (en) CMOS standby current reduction
JPH0358182B2 (forum.php)
US6348717B1 (en) Semiconductor integrated circuit having an improved voltage switching circuit
JP3224712B2 (ja) 論理＆レベル変換回路及び半導体装置
JP2724218B2 (ja) 半導体集積回路
JPH11145413A (ja) 半導体集積回路装置
JPS6213759B2 (forum.php)