JPH0249715Y2 - - Google Patents
Info
- Publication number
- JPH0249715Y2 JPH0249715Y2 JP1984115640U JP11564084U JPH0249715Y2 JP H0249715 Y2 JPH0249715 Y2 JP H0249715Y2 JP 1984115640 U JP1984115640 U JP 1984115640U JP 11564084 U JP11564084 U JP 11564084U JP H0249715 Y2 JPH0249715 Y2 JP H0249715Y2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- chuck plates
- pitch
- groove
- pair
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
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- Stacking Of Articles And Auxiliary Devices (AREA)
- Feeding Of Articles By Means Other Than Belts Or Rollers (AREA)
Description
【考案の詳細な説明】
産業上の利用分野
本考案は半導体装置の製造工程に於いて半導体
ウエハーを高温熱処理、化学気相成長等を行うに
際し、ウエハープロセスキヤリヤからウエハーボ
ートに移載するとき及びウエハーボートからウエ
ハープロセスキヤリヤに移載するときに使用され
るウエハー移載装置に関する。[Detailed description of the invention] Industrial field of application This invention is used when transferring semiconductor wafers from a wafer process carrier to a wafer boat during high-temperature heat treatment, chemical vapor deposition, etc. in the manufacturing process of semiconductor devices. and a wafer transfer device used when transferring a wafer from a wafer boat to a wafer process carrier.
背景技術とその問題点
一般に半導体装置の製造工程に於いて半導体ウ
エハーを高温熱処理、拡散、化学気相成長等を行
うに際し、このウエハーを持ち運んだり、一時的
に貯蔵したりするウエハープロセスキヤリヤから
この高温熱処理、拡散、化学気相成長等を行う炉
に耐え得る例えば石英より成るウエハーボートに
移載しており、又この高温熱処理、拡散、化学気
相成長等を行つた後にこのウエハーボートからウ
エハープロセスキヤリヤに移載することが行なわ
れている。この高温熱処理、拡散、化学気相成長
等を行うに工程上ウエハーボートにピツチ変換を
して移載する場合がある。BACKGROUND TECHNOLOGY AND PROBLEMS Generally, when semiconductor wafers are subjected to high-temperature heat treatment, diffusion, chemical vapor deposition, etc. in the manufacturing process of semiconductor devices, wafer process carriers are used to transport or temporarily store the wafers. The wafers are transferred to a wafer boat made of, for example, quartz that can withstand the furnace that performs this high-temperature heat treatment, diffusion, chemical vapor deposition, etc.; The wafer is transferred to a wafer process carrier. In order to perform this high-temperature heat treatment, diffusion, chemical vapor deposition, etc., the wafers may be pitch-converted and transferred to a wafer boat during the process.
従来このウエハーボートにバツチ式でピツチ変
換をして移載する場合、予めピツチ変換されたキ
ヤリヤへ収納するか、エレベータ機構等を用いて
プロセスキヤリヤから一度バツフアキヤリヤへピ
ツチ変換し、その後ウエハーボートに移載してい
た。 Conventionally, when transferring pitch-converted wafers to a wafer boat in batches, the wafers are stored in a carrier that has been pitch-converted in advance, or the pitch is converted from a process carrier to a buffer carrier using an elevator mechanism, and then the wafers are transferred to a wafer boat. It was being transferred.
斯る従来のバツチ式のピツチ変換は機構上複雑
になり、ピツチ変換機構を有していないウエハー
の移載装置に於いては別の治工具を必要とし工程
数が増える不都合があつた。 Such conventional batch-type pitch conversion is mechanically complex, and wafer transfer devices that do not have a pitch conversion mechanism require additional jigs and tools, resulting in an increase in the number of steps.
考案の目的
本考案は斯る点に鑑み簡単な構成で良好にピツ
チ変換を行うことができる様にすることを目的と
する。Purpose of the invention In view of the above, an object of the present invention is to enable pitch conversion to be performed satisfactorily with a simple configuration.
考案の概要
本考案は開閉自在な一対のウエハーハンドリン
グ用チヤツク板を有したバツチ式のウエハー移載
装置に於いて、このチヤツク板はその内側に複数
のウエハーの厚みよりも幅広の溝を等間隔に有
し、且つこの複数の溝をこの一対のチヤツク板が
閉状態でこの一対のチヤツク板の対応する溝の先
端部の谷部間の間隔がこのウエハーの径よりも小
さくなし、このウエハーを補捉できる第1の溝
と、この一対のチヤツク板が閉状態でこの一対の
チヤツク板の対応する溝の先端部の谷部間の間隔
がこのウエハーの径よりも大きくなし、このウエ
ハーを補捉できない第2の溝とで構成し、この第
1の溝と第2の溝とを一定比一定間隔で設け、ウ
エハー移載時にこのウエハーのピツチ変換を容易
としたものである。斯る本考案によれば簡単な構
成でウエハーの移載時に良好にピツチ変換を行う
ことができる。Summary of the invention This invention is a batch-type wafer transfer device that has a pair of chuck plates for wafer handling that can be opened and closed. and the plurality of grooves are arranged so that when the pair of chuck plates are closed, the distance between the troughs at the tips of the corresponding grooves of the pair of chuck plates is smaller than the diameter of the wafer, and the wafer is The distance between the first groove that can be captured and the trough at the tip of the corresponding groove of the pair of chuck plates when the pair of chuck plates is closed is larger than the diameter of the wafer, and the wafer is The first groove and the second groove are provided at a constant ratio and at a constant interval to facilitate pitch conversion of the wafer when transferring the wafer. According to the present invention, pitch conversion can be performed satisfactorily during wafer transfer with a simple configuration.
実施例
以下図面を参照しながら本考案ウエハー移載装
置の一実施例につき説明しよう。Embodiment An embodiment of the wafer transfer apparatus of the present invention will be described below with reference to the drawings.
第1図は半導体ウエハーの例えば熱処理炉に対
応して設けられているウエハー移載装置の要部を
示し、1はこのウエハー移載装置本体で、このウ
エハー移載装置本体1はその所定位置にウエハー
ボート2及びウエハープロセスキヤリヤ3に配す
る如く構成されている。本例に於けるウエハーボ
ート2は3本の支持杆2aを固定枠2bで固定し
たもので、このウエハーボート2は略円形の半導
体ウエハー4の略90゜角範囲を支持する様したも
のであり、このウエハーボート2は例えば3/32イ
ンチピツチに100枚の半導体ウエハー4が載置可
能に構成されている。またこのウエハープロセス
キヤリヤ3は例えば3/16インチピツチで25枚の半
導体ウエハー4が収納できる如く構成している。 FIG. 1 shows the main parts of a wafer transfer device installed in a heat treatment furnace for semiconductor wafers, for example, 1 is the main body of the wafer transfer device; It is configured to be disposed on a wafer boat 2 and a wafer process carrier 3. The wafer boat 2 in this example has three support rods 2a fixed by a fixing frame 2b, and the wafer boat 2 is designed to support an approximately 90° angle range of the approximately circular semiconductor wafer 4. The wafer boat 2 is configured such that, for example, 100 semiconductor wafers 4 can be placed on a 3/32 inch pitch. Further, this wafer process carrier 3 is constructed so as to be able to accommodate, for example, 25 semiconductor wafers 4 at a pitch of 3/16 inch.
第1図に於いて5はウエハーハンドリング装置
を示し、このウエハーハンドリング装置5は所定
範囲に亘つてX軸、Y軸及びZ軸方向に操作に従
つて自動的に移動できる如くなされている。 In FIG. 1, reference numeral 5 indicates a wafer handling device, and this wafer handling device 5 is configured to be able to automatically move in the X-axis, Y-axis, and Z-axis directions over a predetermined range according to an operation.
このウエハーハンドリング装置5は第2図及び
第3図に示す如く互に対向する面の下部に夫々複
数例えば3/32インチピツチの50個の縦溝6を有す
る一対のチヤツク板5a及び5bより成り、この
一対のチヤツク板5a及び5bは周知の平行開閉
機構により対向する方向に開閉自在に構成する。
この場合この一対のチヤツク板5a及び5bが閉
状態に於いてこの50個の縦溝6の一つおきの対向
した縦溝6aの間でウエハー4の側端を挾持する
如くすると共にその他の縦溝6bはこのときウエ
ハー4を捕捉できない構成とする。 As shown in FIGS. 2 and 3, this wafer handling device 5 consists of a pair of chuck plates 5a and 5b each having a plurality of, for example, 50 vertical grooves 6 with a pitch of 3/32 inch in the lower portions of opposing surfaces. The pair of chuck plates 5a and 5b are configured to be openable and closable in opposite directions by a well-known parallel opening and closing mechanism.
In this case, when the pair of chuck plates 5a and 5b are closed, the side edges of the wafer 4 are held between every other opposing vertical groove 6a of the 50 vertical grooves 6, and the other vertical grooves The groove 6b is configured so that it cannot capture the wafer 4 at this time.
本例に於いてはこの一対のチヤツク板5a及び
5bの一つおきの縦溝6aを第2図及び第4図に
示す如くチヤツク板5a,5bの先端部内側への
湾曲に沿つて形成する如くし、このチヤツク板5
a,5bがウエハー4を挾持したときの縦溝6a
の谷部6abの曲率をウエハー4の直径が例えば
100mmのときに半径50mmとして、このウエハー4
の曲率と同じとすると共にこのときのこのチヤツ
ク板5a及び5bの夫々の縦溝6aの谷部6ab
の夫々の曲率中心がこのウエハー4の中心よりや
や手前側になる如くする。またこの縦溝6の残り
の縦溝6bは第3図及び第4図に示す如くその谷
部6bbをチヤツク板5a,5bの先端部の湾曲
に沿うことなく直線的に形成し、このチヤツク板
5a及び5bの閉状態に於いても相対向する縦溝
6b及び6bの谷部6bb及び6bb間の間隔がウ
エハー4の直径例えば100mmより大きい104mmとな
る如く構成する。 In this example, every other vertical groove 6a of the pair of chuck plates 5a and 5b is formed along the inward curvature of the tips of the chuck plates 5a and 5b, as shown in FIGS. 2 and 4. Like, this chalkboard 5
Vertical groove 6a when a and 5b hold the wafer 4
For example, if the diameter of the wafer 4 is the curvature of the valley 6ab of
If the radius is 50mm when the wafer is 100mm, then this wafer 4
It is assumed that the curvature is the same as that of the trough 6ab of each vertical groove 6a of the chuck plates 5a and 5b.
The centers of curvature of each of the wafers 4 and 4 are arranged so that they are slightly closer to the center of the wafer 4. In addition, the remaining vertical grooves 6b of the vertical grooves 6 are formed so that their troughs 6bb are linear without following the curves of the tips of the chuck plates 5a and 5b, as shown in FIGS. 3 and 4. Even when the grooves 5a and 5b are in the closed state, the distance between the valleys 6bb and 6bb of the vertical grooves 6b and 6b facing each other is configured such that the diameter of the wafer 4 is, for example, 104 mm, which is larger than 100 mm.
またこの縦溝6の山部6tの曲率を半径53mmと
してこのウエハー4の曲率と略同じとすると共に
このチヤツク板5a及び5bの夫々のこの山部6
t及び6tの夫々の曲率中心が、このウエハー4
の中心よりやや対向するチヤツク板5b及び5a
側になる様にし、更に之等チヤツク板5a及び5
bの夫々の山部6t及び6tの夫々の曲率中心7
bが縦溝6a及び6aの曲率中心7aの上側に位
置する如くする。更にこの場合チヤツク板5a及
び5bの湾曲しない部分のこのチヤツク板5a及
び5bが閉状態のときの間隔をウエハー3の直径
例えば100mmよりやや大きい104mmとし、このチヤ
ツク板5a,5bの夫々の縦溝6aの谷部6ab
の内先端部をこの湾曲しない部分より例えば9mm
突出する如くする。また本例に於いてはこのチヤ
ツク板5a,5bの縦溝6a,6bはこの谷部6
ab,6bbの幅をウエハー4の厚さ例えば0.5mmよ
りやや大きい0.8mmとし、これより9゜で両側に拡
がるV溝とする。 Furthermore, the radius of the curvature of the crest 6t of the vertical groove 6 is 53 mm, which is approximately the same as the curvature of the wafer 4, and the curvature of the ridge 6t of each of the chuck plates 5a and 5b is set to 53 mm.
The centers of curvature of each of t and 6t are on this wafer 4.
chuck plates 5b and 5a slightly opposite to each other from the center of the
Place the chuck plates 5a and 5 so that they are on the side.
Center of curvature 7 of each peak 6t and 6t of b
b is positioned above the center of curvature 7a of the vertical grooves 6a and 6a. Furthermore, in this case, the distance between the uncurved portions of the chuck plates 5a and 5b when the chuck plates 5a and 5b are in the closed state is set to 104 mm, which is slightly larger than the diameter of the wafer 3, for example, 100 mm, and the vertical grooves of each of the chuck plates 5a and 5b are 6a valley 6ab
For example, 9mm from the inner tip of this non-curved part.
Make it stand out. Further, in this example, the longitudinal grooves 6a, 6b of the chuck plates 5a, 5b are
The widths of ab and 6bb are set to 0.8 mm, which is slightly larger than the thickness of the wafer 4, for example, 0.5 mm, and a V-groove is formed that widens on both sides at an angle of 9 degrees from this.
本例は上述の如く構成しているので3/16インチ
ピツチで収納されたウエハープロセスキヤリヤ3
の複数枚例えば25枚の半導体ウエハー4を3/16イ
ンチピツチでウエハーボート2に移載する場合、
このウエハーハンドリング装置5をこの所定位置
に置かれたプロセスキヤリヤ3上に持ち来たして
これに接近させチヤツク板5a及び5bを開状態
とし一つおきの縦溝6aを夫々半導体ウエハー4
に対応させて、その閉状態としてこのチヤツク板
5a及び5b間でこの25枚の半導体ウエハー4を
挾持し、この状態でこのウエハーハンドリング装
置5を所定位置に配されたウエハーボート2の所
定位置上に持ち来たして所定位置に接近し、ウエ
ハー4をチヤツク板5a,5bで挾持した状態で
ウエハーボート2の支持杆2aの1つおきの溝即
ち3/16インチピツチに挿入して、このチヤツク板
5a,5bを開き、このウエハー4を移載する。 Since this example is configured as described above, the wafer process carrier 3 is housed with a 3/16 inch pitch.
When transferring a plurality of, for example, 25 semiconductor wafers 4 to the wafer boat 2 at a pitch of 3/16 inches,
The wafer handling device 5 is brought over and approached the process carrier 3 placed at a predetermined position, and the chuck plates 5a and 5b are opened, and every other vertical groove 6a is inserted into the semiconductor wafer 3.
In the closed state, the 25 semiconductor wafers 4 are held between the chuck plates 5a and 5b, and in this state, the wafer handling device 5 is placed on a predetermined position of the wafer boat 2, which is placed in a predetermined position. Then, with the wafer 4 held between the chuck plates 5a and 5b, insert it into every other groove, that is, at a 3/16 inch pitch, in the support rod 2a of the wafer boat 2, and then press the chuck plate 5a. , 5b is opened, and this wafer 4 is transferred.
またウエハーボート2より高温熱処理等がなさ
れた半導体ウエハー4をウエハープロセスキヤリ
ヤ3に移載する場合は上述同様にウエハーハンド
リング装置5のチヤツク板5a,5bによりウエ
ハーボート2に載置されたウエハー4を挾持し、
その状態でこのウエハーハンドリング装置をプロ
セスキヤリヤ3上に持ち来たしこのウエハー4を
プロセスキヤリヤ3に移載する。 Further, when transferring semiconductor wafers 4 that have been subjected to high-temperature heat treatment etc. from the wafer boat 2 to the wafer process carrier 3, the wafers 4 placed on the wafer boat 2 are transferred by chuck plates 5a and 5b of the wafer handling device 5 in the same manner as described above. holding the
In this state, the wafer handling device is brought onto the process carrier 3, and the wafer 4 is transferred onto the process carrier 3.
次にこの3/16インチピツチで収納されたウエハ
ープロセスキヤリヤ3の半導体ウエハー4をこの
1/2ピツチである3/32インチピツチでウエハーボ
ート2に移載するときは先ず第1回目は上述と同
様にして半導体ウエハー4をウエハーボート2に
3/16インチピツチで移載し、次に別のウエハープ
ロセスキヤリヤ3の半導体ウエハー4をこのウエ
ハーハンドリング装置5のチヤツク板5a,5b
で上述と同様にしてウエハー4を挾持し、この状
態でこのウエハーハンドリング装置5をウエハー
ボート2上に持ち来たし、これを第1回目とは3/
32インチピツチずらした状態でウエハーボート2
に接近させて移載する。この場合第1回目に移載
されたウエハー4はチヤツク板5a,5bの縦溝
6bに対応することとなるので何等支障なく、移
載でき3/32インチピツチに移載されることとな
る。 Next, when transferring the semiconductor wafers 4 of the wafer process carrier 3 stored in this 3/16-inch pitch to the wafer boat 2 with this 1/2-inch pitch, which is 3/32-inch pitch, the first time is the same as described above. The semiconductor wafers 4 are transferred to the wafer boat 2 at a pitch of 3/16 inch, and then the semiconductor wafers 4 from another wafer process carrier 3 are transferred to the chuck plates 5a and 5b of this wafer handling device 5.
The wafer 4 was held in the same manner as described above, and the wafer handling device 5 was brought onto the wafer boat 2 in this state.
Wafer boat 2 with a 32 inch pitch shift
Transfer it close to. In this case, the wafers 4 transferred for the first time correspond to the vertical grooves 6b of the chuck plates 5a and 5b, so that they can be transferred without any problem and are transferred at a pitch of 3/32 inch.
またこの3/32インチピツチに移載されたウエハ
ーボート2のウエハー4を3/16インチピツチのウ
エハープロセスキヤリヤ3に収納するときは第1
回目の移載で1つおきのウエハー4をこのチヤツ
ク板5a,5bにて挾持して移載し、次に残りの
ウエハーボート2上のウエハー4を上述同様にし
て移載する。 Also, when storing the wafers 4 of the wafer boat 2 transferred to this 3/32 inch pitch into the 3/16 inch pitch wafer process carrier 3, the first
In the first transfer, every other wafer 4 is transferred while being held between the chuck plates 5a and 5b, and then the wafers 4 on the remaining wafer boats 2 are transferred in the same manner as described above.
次に上述実施例でウエハー4を3/16インチピツ
チの倍のピツチである3/8インチピツチにウエハ
ーボート2に載置したいときには上述チヤツク板
5a及び5bの縦溝6のピツチを3/16インチピツ
チとし上述同様に1つおきに上述縦溝6a及び6
bの構成とすれば良い。この場合ウエハーハンド
リング装置5のチヤツク板5a及び5bによりウ
エハープロセスキヤリヤ3より1つおきのウエハ
ー4を挾持し、この状態でこれをウエハーボート
2に移載し、次にウエハープロセスキヤリヤ3の
ウエハー4を3/16インチピツチずらした状態でチ
ヤツク板5a,5bで挾持し、この状態でウエハ
ーボート2に前回載置したウエハー4に連続して
載置すれば3/8インチピツチでこのウエハー4を
ウエハーボート2に移載することができる。この
3/8インチピツチのウエハーボート2のウエハー
4を3/16インチピツチのウエハープロセスキヤリ
ヤ3に収納するときは、先ず3/8インチピツチで
上述同様にして移載し、次に残りの3/8インチピ
ツチでチヤツク板5a,5bで挾持したウエハー
4を前回より3/16インチピツチずらしてウエハー
プロセスキヤリヤ3に収納する様にする。 Next, in the above embodiment, when it is desired to place the wafers 4 on the wafer boat 2 at a pitch of 3/8 inches, which is twice the pitch of 3/16 inches, the pitch of the vertical grooves 6 of the chuck plates 5a and 5b is set to a pitch of 3/16 inches. Similarly to the above, every other vertical groove 6a and 6
The configuration b may be used. In this case, every other wafer 4 is clamped from the wafer process carrier 3 by the chuck plates 5a and 5b of the wafer handling device 5, transferred to the wafer boat 2 in this state, and then transferred to the wafer process carrier 3. If the wafer 4 is sandwiched between the chuck plates 5a and 5b with a 3/16 inch pitch shift and is placed successively on the wafer 4 previously placed on the wafer boat 2 in this state, the wafer 4 will be placed at a 3/8 inch pitch. It can be transferred to the wafer boat 2. When storing wafers 4 from the 3/8 inch pitch wafer boat 2 into the 3/16 inch pitch wafer process carrier 3, first transfer the wafers 4 at a 3/8 inch pitch in the same manner as described above, and then transfer the remaining 3/8 The wafers 4 held between the chuck plates 5a and 5b at an inch pitch are stored in the wafer process carrier 3 with a pitch shifted by 3/16 inch from the previous time.
この場合上述の如くウエハーハンドリング装置
5のチヤツク板5a,5bの上述構成の溝6a及
び6bを一定比一定間隔で設ける様にすればウエ
ハー4を移載するときに所望のピツチ変換をする
ことができる。 In this case, if the grooves 6a and 6b of the above-mentioned structure are provided in the chuck plates 5a and 5b of the wafer handling device 5 at a constant ratio and at a constant interval as described above, the desired pitch can be changed when transferring the wafer 4. can.
尚本考案は上述実施例に限ることなく本考案の
要旨を逸脱することなくその他種々の構成が取り
得ることは勿論である。 It goes without saying that the present invention is not limited to the above-described embodiments, and that various other configurations may be adopted without departing from the gist of the present invention.
考案の効果
本考案に依ればウエハーハンドリング装置5の
チヤツク板5a,5bの構成を変えるだけの簡単
な構成でウエハー4の移載時に良好にピツチ変換
を行うことができる。また本考案によればピツチ
変換の為の複雑な機構及びピツチ変換治具が不要
となる利益がある。更に本考案は上述の如く構成
が簡単であるのでこの移載装置が安価となると共
にウエハー移載時のピツチ変換の信頼性が向上し
更にメンテナンス性が良好である利益がある。Effects of the Invention According to the present invention, pitch conversion can be performed satisfactorily when transferring wafers 4 by simply changing the structure of chuck plates 5a and 5b of wafer handling device 5. Further, according to the present invention, there is an advantage that a complicated mechanism for pitch conversion and a pitch conversion jig are not required. Further, since the present invention has a simple structure as described above, the transfer device is inexpensive, and the reliability of pitch conversion during wafer transfer is improved, and maintainability is also improved.
第1図は本考案ウエハー移載装置の一実施例を
示す一部切欠斜視図、第2図及び第3図は夫々本
考案の要部の例を示す断面図、第4図は本考案の
要部の例を示す拡大切欠図である。
1はウエハー移載装置本体、2はウエハーボー
ト、3はウエハープロセスキヤリヤ、4は半導体
ウエハー、5はウエハーハンドリング装置、5a
及び5bは夫々チヤツク板、6a及び6bは夫夫
縦溝、6ab及び6bbは夫々縦溝の谷部、6tは
縦溝の山部である。
FIG. 1 is a partially cutaway perspective view showing an embodiment of the wafer transfer device of the present invention, FIGS. 2 and 3 are cross-sectional views showing examples of the main parts of the present invention, and FIG. FIG. 3 is an enlarged cutaway diagram showing an example of a main part. 1 is a wafer transfer device main body, 2 is a wafer boat, 3 is a wafer process carrier, 4 is a semiconductor wafer, 5 is a wafer handling device, 5a
and 5b are chuck plates, 6a and 6b are longitudinal grooves, 6ab and 6bb are valleys of the longitudinal grooves, and 6t are peaks of the longitudinal grooves.
Claims (1)
ツク板を有したバツチ式のウエハー移載装置に於
いて、上記チヤツク板は内側に複数のウエハーの
厚みよりも幅広の溝を等間隔に有し、且つ上記複
数の溝は上記一対のチヤツク板が閉状態で上記一
対のチヤツク板の対応する溝の先端部の谷部間の
間隔が上記ウエハーの径より小さくなし、上記一
対のチヤツク板の山部の曲率中心が、上記一対の
チヤツク板の対応する溝の先端部の谷部の曲率中
心の上側に位置する上記ウエハーを補足できる第
1の溝と、上記一対のチヤツク板が閉状態で上記
一対のチヤツク板の対応する溝の先端部の谷部間
の間隔が上記ウエハーの径よりも大きくなし、上
記ウエハーを補足できない第2の溝とで構成し、
上記第1の溝と第2の溝とを一定比一定間隔で設
け、ウエハー移載時に上記ウエハーのピツチ変換
を容易としたことを特徴とするウエハー移載装
置。 In a batch-type wafer transfer device having a pair of chuck plates for wafer handling that can be opened and closed, the chuck plate has grooves wider than the thickness of a plurality of wafers at equal intervals on the inside, and The grooves are formed such that when the pair of chuck plates are closed, the distance between the troughs at the tips of the corresponding grooves of the pair of chuck plates is smaller than the diameter of the wafer, and the center of curvature of the peaks of the pair of chuck plates is is a first groove capable of capturing the wafer, which is located above the center of curvature of the trough at the tip of the corresponding groove of the pair of chuck plates; The gap between the troughs at the tips of the corresponding grooves is larger than the diameter of the wafer, and a second groove cannot capture the wafer,
A wafer transfer device characterized in that the first groove and the second groove are provided at a constant ratio and at a constant interval to facilitate pitch conversion of the wafer during wafer transfer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11564084U JPS6133443U (en) | 1984-07-28 | 1984-07-28 | Wafer transfer device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11564084U JPS6133443U (en) | 1984-07-28 | 1984-07-28 | Wafer transfer device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6133443U JPS6133443U (en) | 1986-02-28 |
| JPH0249715Y2 true JPH0249715Y2 (en) | 1990-12-27 |
Family
ID=30674601
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11564084U Granted JPS6133443U (en) | 1984-07-28 | 1984-07-28 | Wafer transfer device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6133443U (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0646647B2 (en) * | 1988-03-11 | 1994-06-15 | 株式会社東芝 | Semiconductor wafer pitch switching device |
| JPH0312216A (en) * | 1989-06-09 | 1991-01-21 | Toshiba Corp | Moistureproof storage container |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6032352B2 (en) * | 1978-04-19 | 1985-07-27 | 株式会社日立製作所 | Transfer device for plate-shaped objects |
| JPS6045031A (en) * | 1983-08-22 | 1985-03-11 | Tomuko:Kk | Automatic wafer transfer machine |
-
1984
- 1984-07-28 JP JP11564084U patent/JPS6133443U/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6133443U (en) | 1986-02-28 |
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