JPH0249403A - Varistor - Google Patents
VaristorInfo
- Publication number
- JPH0249403A JPH0249403A JP63201416A JP20141688A JPH0249403A JP H0249403 A JPH0249403 A JP H0249403A JP 63201416 A JP63201416 A JP 63201416A JP 20141688 A JP20141688 A JP 20141688A JP H0249403 A JPH0249403 A JP H0249403A
- Authority
- JP
- Japan
- Prior art keywords
- varistor
- voltage
- ceramics
- electrode
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052574 oxide ceramic Inorganic materials 0.000 claims abstract description 15
- 239000011224 oxide ceramic Substances 0.000 claims abstract description 15
- 239000000919 ceramic Substances 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 abstract description 7
- 229910052788 barium Inorganic materials 0.000 abstract description 5
- 230000006866 deterioration Effects 0.000 abstract description 4
- 229910052712 strontium Inorganic materials 0.000 abstract description 4
- 229910052727 yttrium Inorganic materials 0.000 abstract description 4
- 229910052692 Dysprosium Inorganic materials 0.000 abstract description 3
- 229910052689 Holmium Inorganic materials 0.000 abstract description 3
- 229910052775 Thulium Inorganic materials 0.000 abstract description 3
- 229910052769 Ytterbium Inorganic materials 0.000 abstract description 3
- 229910052691 Erbium Inorganic materials 0.000 abstract description 2
- 229910052791 calcium Inorganic materials 0.000 abstract description 2
- 229910002480 Cu-O Inorganic materials 0.000 abstract 1
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 7
- 229910052709 silver Inorganic materials 0.000 description 7
- 239000004332 silver Substances 0.000 description 7
- 230000005012 migration Effects 0.000 description 6
- 238000013508 migration Methods 0.000 description 6
- 229910052697 platinum Inorganic materials 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 229910052763 palladium Inorganic materials 0.000 description 4
- 239000011230 binding agent Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 2
- 150000001342 alkaline earth metals Chemical group 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000002003 electrode paste Substances 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、例えばサージ吸収素子として用いられるバリ
スタに関し、特に、その電極が改良されたものに関する
。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a varistor used, for example, as a surge absorption element, and particularly to a varistor whose electrodes are improved.
(従来の技術)
従来より、電圧非直線特性を示すセラミックスの表面に
電極を形成してなるバリスタや、表面に形成された電極
に加えて内部電極をも有する積層型のバリスタ等、種々
の構造のものが知られている。この種のバリスタの電極
としては、一般に、銀、パラジウムもしくは白金等の貴
金属またはこれらの合金が用いられている。(Prior art) Various structures have been used in the past, such as varistors in which electrodes are formed on the surface of ceramics that exhibit voltage nonlinear characteristics, and multilayer varistors that have internal electrodes in addition to the electrodes formed on the surface. things are known. As electrodes of this type of varistor, noble metals such as silver, palladium, or platinum, or alloys thereof are generally used.
(発明が解決しようとする技術的課題)しかしながら、
上述したような電極材料は貴金属であるため高価であり
、バリスタのコストを高いものとしていた。(Technical problem to be solved by the invention) However,
The above-mentioned electrode materials are expensive because they are precious metals, making the cost of the varistor high.
また、銀やパラジウムからなる電極を用いた場合には、
電極材料のバリスタ材へのマイグレーシロンが生じ易く
、その結果、耐湿性等が充分でなく、電界を印加した場
合に短絡し易いという問題があった。In addition, when using electrodes made of silver or palladium,
Migration of the electrode material to the varistor material tends to occur, and as a result, there is a problem in that moisture resistance and the like are not sufficient and short circuits easily occur when an electric field is applied.
ところで、バリスタ電圧は、バリスタ材中の電極間に存
在する粒界の数により決定される。従って、低電圧用途
に用いるバリスタを製作する場合には、この粒界の敗を
低減しなければならない。By the way, the varistor voltage is determined by the number of grain boundaries existing between the electrodes in the varistor material. Therefore, when manufacturing varistors for low voltage applications, this grain boundary failure must be reduced.
しかし、粒界数が減少すると、バリスタ材の欠陥の電気
的な特性に与える影響がより大きくなる。However, as the number of grain boundaries decreases, defects in the varistor material have a greater influence on the electrical characteristics.
よって、低電圧バリスタの場合には、上記のような電極
のマイグレーシランがより大きな問題となっていた。Therefore, in the case of low voltage varistors, the migration of silane on the electrodes as described above has become a bigger problem.
例えば、チップ型のバリスタの場合、5〜10■のバリ
スタ電圧を得ようとした場合、厚み方向の粒界数を2〜
4としなければならないが、銀やパラジウムからなる電
極を用いた場合、マイグレーションにより充分な電気的
特性を得ることはできなかった。For example, in the case of a chip-type varistor, if you are trying to obtain a varistor voltage of 5 to 10 cm, the number of grain boundaries in the thickness direction is 2 to 10 cm.
4, but when electrodes made of silver or palladium were used, sufficient electrical characteristics could not be obtained due to migration.
もっとも、白金からなる電極を用いた場合には上記のよ
うなマイグレーションは生じ難い、しかしながら、焼結
に際し雰囲気中の酸素のバリスタ材への導入が白金電極
により阻止されるため、並びに焼結前のセラミック材内
に混入されているバインダーの飛散も阻止されるため、
焼結密度が充分なものとならず、安定な特性のバリスタ
を得ることが困難であった。However, when electrodes made of platinum are used, the above migration is unlikely to occur. However, the introduction of oxygen in the atmosphere into the varistor material during sintering is blocked by the platinum electrode, This also prevents the scattering of the binder mixed in the ceramic material.
The sintered density was not sufficient, making it difficult to obtain a varistor with stable characteristics.
よって、本発明の目的は、セラミックス・バリスタ材の
電圧非直線性を有効に活かし得る電極を備えたバリスタ
を提供することにある。Therefore, an object of the present invention is to provide a varistor equipped with electrodes that can effectively take advantage of the voltage nonlinearity of ceramic varistor materials.
〔技術的課題を解決するための手段]
本発明めバリスタは、電圧非直線特性を有するセラミッ
クスと、このセラミックスの内部または表面に設けられ
ており、低温で超伝導性を示す酸化物セラミックスより
なる電極とを備えることを特徴とするものである。[Means for Solving Technical Problems] The varistor of the present invention is made of a ceramic having voltage nonlinear characteristics and an oxide ceramic that is provided inside or on the ceramic and exhibits superconductivity at low temperatures. The device is characterized by comprising an electrode.
本発明において用いる「低温で超伝導性を示す酸化物セ
ラミックス」とは、Ln−M−Cu−0系酸化物セラミ
ツクス(LnはY、Yb、Er。The "oxide ceramics exhibiting superconductivity at low temperatures" used in the present invention are Ln-M-Cu-0-based oxide ceramics (Ln is Y, Yb, or Er).
Ho、Dy、Tm、MはBa、Sr、Ca)からなるも
の、より具体的には、
一般式: L n M! CLls O?4(但し、L
nはY、Yb、Er、Ho、DyおよびTmからなる群
から選択したランタニド元素、MはBa、SrおよびC
aからなる群から選択したアルカリ土類金属である。)
または、一般式: (LaM)* Cubs
(但し、MはBa、SrまたはCaのアルカリ土類金属
である。)で表される超伝導性酸化物セラミックスを意
味するものである。Ho, Dy, Tm, M consist of Ba, Sr, Ca), more specifically, the general formula: L n M! CLls O? 4 (However, L
n is a lanthanide element selected from the group consisting of Y, Yb, Er, Ho, Dy and Tm; M is Ba, Sr and C;
It is an alkaline earth metal selected from the group consisting of a. )
Alternatively, it refers to a superconducting oxide ceramic represented by the general formula: (LaM)*Cubs (where M is an alkaline earth metal such as Ba, Sr, or Ca).
本発明は上記の超伝導性を示す酸化物セラミックスから
なる電極を用いたことに特徴を有し、電圧非直線特性を
有するセラミックスとしては、公知の種々のものを用い
ることができる。また、電圧非直線特性を有するセラミ
ックスは一層構造であってもよく、比抵抗の異なる層を
交互に積層した多層構造からなるものであってもよく、
その物理的な構造は問わない。The present invention is characterized by using an electrode made of an oxide ceramic exhibiting superconductivity as described above, and various known ceramics having voltage nonlinear characteristics can be used. Further, the ceramic having voltage non-linear characteristics may have a single layer structure, or may have a multilayer structure in which layers with different resistivities are alternately laminated.
Its physical structure does not matter.
上記のような超伝導性酸化物セラミックスは、低温また
は掻低温で超伝導性を示すだけでなく、常温でも10−
3Ω1程度の導電性を示す0本発明者達は、このような
常温における導電性に着目し、バリスタの電極として用
いることの可能性を検討し、実験を繰返すことにより本
発明を成すに至ったものである。The superconducting oxide ceramics mentioned above not only exhibit superconductivity at low or sintered temperatures, but also exhibit 10-
The present inventors focused on such conductivity at room temperature, investigated the possibility of using it as an electrode for a varistor, and through repeated experiments, achieved the present invention. It is something.
本発明では、セラミックスの内部または表面に設けられ
た電極が低温で超伝導性を示す酸化物セラミックスによ
り構成されているので、銀やパラジウムからなる従来の
電極の場合のようなマイグレーションを生じない、従っ
て、耐湿性等に優れたバリスタを得ることができる。ま
た、白金電極を用いた従来例ではマイグレーションこそ
生じ難かったが、バリスタ材の焼結密度が充分ではない
ため特性が不安定であつた0本発明では、上記のような
電極を用いたので後述する実施例から明らかなように、
特性の安定なバリスタを実現することが可能である。In the present invention, since the electrode provided inside or on the surface of the ceramic is made of oxide ceramic that exhibits superconductivity at low temperatures, migration does not occur as in the case of conventional electrodes made of silver or palladium. Therefore, a varistor with excellent moisture resistance etc. can be obtained. In addition, in the conventional example using a platinum electrode, migration was difficult to occur, but the characteristics were unstable because the sintered density of the varistor material was not sufficient. As is clear from the examples,
It is possible to realize a varistor with stable characteristics.
すなわち、本発明によれば、電気的な特性の劣化、すな
わちバリスタ電圧や電圧非直線係数αの経時的な劣化を
防止することができ、信幀性に優れたバリスタを実現す
ることが可能となる。That is, according to the present invention, it is possible to prevent the deterioration of electrical characteristics, that is, the deterioration of the varistor voltage and the voltage nonlinear coefficient α over time, and it is possible to realize a varistor with excellent reliability. Become.
以下、本発明の実施例につき説明する。 Examples of the present invention will be described below.
11医上
ZnOを97.5モル%、B l z Os 、M n
O。11 Medical ZnO 97.5 mol%, B l z Os , M n
O.
S b* Os 、Crz O@およびCo、O,をそ
れぞれ0. 5モル%となるように調合し、これらを粉
砕し、さらに有機質バインダを加えて混合した後、直径
10閣×肉厚0.5−の円板状に成形した。この成形体
を、空気中にて1250″Cにおいて2時間焼成し、焼
結体を得た。S b*Os , Crz O@ and Co, O, are each set to 0. The mixture was mixed to have a concentration of 5 mol %, pulverized, an organic binder was added and mixed, and then molded into a disc with a diameter of 10 mm and a wall thickness of 0.5 mm. This molded body was fired in air at 1250″C for 2 hours to obtain a sintered body.
他方、Y、Ba、Cuが、モル比で1:2:3となるよ
うに、Y@ 03 、B a COs 、およびCUO
を混合し、これを950℃で焼結した後粉砕した。粉砕
された粉末にフェスを加え実施例の酸化物セラミックス
・ペーストを得た。On the other hand, Y@03, BaCOs, and CUO were mixed so that Y, Ba, and Cu were in a molar ratio of 1:2:3.
were mixed, sintered at 950°C, and then pulverized. Fes was added to the pulverized powder to obtain the oxide ceramic paste of the example.
比較例として、A、粉末にフェスを加えた得た銀ペース
トを用意した。As a comparative example, A, a silver paste obtained by adding Fess to the powder was prepared.
上記2種のペーストを焼結体の表面に直径6mの大きさ
に塗布し、600℃の温度で焼付けた。The above two types of pastes were applied to the surface of the sintered body to a size of 6 m in diameter, and baked at a temperature of 600°C.
得られたバリスタの特性を下記の第1表に示す。The characteristics of the obtained varistor are shown in Table 1 below.
第1表
*1・・・電圧非直線係数
*2・・・1500Aのサージ印加直後のバリスタ電圧
の変化。Table 1 *1 Voltage nonlinear coefficient *2 Change in varistor voltage immediately after applying a 1500A surge.
*3・・・60℃、相対温度90%において2000時
間放置後のバリスタ電圧の変化。*3...Change in varistor voltage after being left for 2000 hours at 60°C and 90% relative temperature.
*4・・・*3と同じ環境の下に4000時間放置後の
バリスタ電圧の変化。*4... Change in varistor voltage after being left in the same environment as *3 for 4000 hours.
第1表から明らかなように、銀電極を用いた比較例では
、耐湿性が悪く、バリスタ電圧が経時的に低下する傾向
のあることがわかる。従って、長時間連続使用した場合
、短絡する可能性がある。As is clear from Table 1, the comparative examples using silver electrodes had poor moisture resistance and the varistor voltage tended to decrease over time. Therefore, if used continuously for a long time, there is a possibility of short circuit.
これに対して、実施例のバリスタでは、バリスタ電圧は
経時的に上昇する傾向があり、従ってより安全に用いる
得ることがわかる。On the other hand, in the varistor of the example, the varistor voltage tends to increase over time, and therefore it can be seen that it can be used more safely.
なお、実施例のバリスタにおける酸化物セラミックスよ
りなる電極では、はんだは付着しないが、リード端子を
取付ける際には銅等によりメツキ層を形成すればよい、
この場合、メツキ層を形成しても電気的な特性は変化し
ないことが確かめられた。Note that solder does not adhere to the electrodes made of oxide ceramics in the varistors of the examples, but when attaching lead terminals, a plating layer may be formed with copper or the like.
In this case, it was confirmed that the electrical characteristics did not change even if the plating layer was formed.
裏旌班1
Zn095.8モル%、B2O,を1.5モル%、Mn
Oを1.0モル%、Cot’sを0. 5モル%、Pr
aO++を0.2−+−ル%、T10.を1.0モル%
となるように混合し、有機質バインダを加えて、40p
mの厚みに成形した。Urajoban 1 Zn095.8 mol%, B2O, 1.5 mol%, Mn
1.0 mol% of O, 0.0% of Cot's. 5 mol%, Pr
aO++ 0.2-+-le%, T10. 1.0 mol%
Mix it so that it becomes, add an organic binder, and make 40p
It was molded to a thickness of m.
他方、ptおよびAg−Pdを主体とする比較例の電極
ペーストと、実施例1において用いた酸化物のセラミッ
クス・ペーストとを用意し、これをそれぞれ、上記シー
トの表面に印刷し、順次積層し、加圧・圧着した。得ら
れた各積層体を空気中にて900℃の温度で3時間焼成
した後、銀を主体とした外部電極を両端面に焼付けた。On the other hand, an electrode paste of a comparative example mainly composed of PT and Ag-Pd and the oxide ceramic paste used in Example 1 were prepared, and these were respectively printed on the surface of the above sheet and laminated one after another. , pressurized and crimped. After each of the obtained laminates was fired in air at a temperature of 900° C. for 3 hours, external electrodes mainly made of silver were baked on both end faces.
このようして得られた各バリスタの電気的な特性及び経
時特性を第2表及び第1図に示す。The electrical characteristics and aging characteristics of each varistor thus obtained are shown in Table 2 and FIG.
第2表 四ンが生じ短絡が生じているからである。Table 2 This is because a short circuit has occurred due to the four currents.
また、第1図から明らかなように、PtやAg−Pdか
らなる電極を用いたバリスタでは、経時的にバリスタ電
圧が低下する傾向があるのに対して、実施例のバリスタ
では、バリスタ電圧は経時的に上昇する傾向のあること
がわかる。Furthermore, as is clear from FIG. 1, in varistors using electrodes made of Pt or Ag-Pd, the varistor voltage tends to decrease over time, whereas in the varistor of the example, the varistor voltage It can be seen that there is a tendency to increase over time.
第1図は実施例2における実施例と比較例のバリスタ電
圧の経時特性を示す図である。FIG. 1 is a diagram showing the temporal characteristics of the varistor voltage of Example 2 and Comparative Example.
Claims (1)
クスの内部または表面に設けられており、低温で超伝導
性を示す酸化物セラミックスよりなる電極とを備えるこ
とを特徴とするバリスタ。A varistor comprising: a ceramic having nonlinear voltage characteristics; and an electrode made of an oxide ceramic that is provided inside or on the surface of the ceramic and exhibits superconductivity at low temperatures.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63201416A JPH0249403A (en) | 1988-08-11 | 1988-08-11 | Varistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63201416A JPH0249403A (en) | 1988-08-11 | 1988-08-11 | Varistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0249403A true JPH0249403A (en) | 1990-02-19 |
Family
ID=16440721
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63201416A Pending JPH0249403A (en) | 1988-08-11 | 1988-08-11 | Varistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0249403A (en) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006020671A (en) * | 2004-07-06 | 2006-01-26 | Daiichi Shokai Co Ltd | Game machine |
JP2007029242A (en) * | 2005-07-25 | 2007-02-08 | Daiichi Shokai Co Ltd | Game machine |
JP2007167583A (en) * | 2005-12-26 | 2007-07-05 | Daiichi Shokai Co Ltd | Pachinko game machine |
JP2008148731A (en) * | 2006-12-14 | 2008-07-03 | Taiyo Elec Co Ltd | Game machine |
JP2008212355A (en) * | 2007-03-02 | 2008-09-18 | Taiyo Elec Co Ltd | Game machine |
-
1988
- 1988-08-11 JP JP63201416A patent/JPH0249403A/en active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006020671A (en) * | 2004-07-06 | 2006-01-26 | Daiichi Shokai Co Ltd | Game machine |
JP2007029242A (en) * | 2005-07-25 | 2007-02-08 | Daiichi Shokai Co Ltd | Game machine |
JP2007167583A (en) * | 2005-12-26 | 2007-07-05 | Daiichi Shokai Co Ltd | Pachinko game machine |
JP2008148731A (en) * | 2006-12-14 | 2008-07-03 | Taiyo Elec Co Ltd | Game machine |
JP2008212355A (en) * | 2007-03-02 | 2008-09-18 | Taiyo Elec Co Ltd | Game machine |
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