JPH0248427Y2 - - Google Patents
Info
- Publication number
- JPH0248427Y2 JPH0248427Y2 JP11369986U JP11369986U JPH0248427Y2 JP H0248427 Y2 JPH0248427 Y2 JP H0248427Y2 JP 11369986 U JP11369986 U JP 11369986U JP 11369986 U JP11369986 U JP 11369986U JP H0248427 Y2 JPH0248427 Y2 JP H0248427Y2
- Authority
- JP
- Japan
- Prior art keywords
- reaction tube
- electrodes
- plasma
- cvd
- pair
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000006243 chemical reaction Methods 0.000 claims description 46
- 238000005530 etching Methods 0.000 description 7
- 239000007789 gas Substances 0.000 description 5
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- 238000003486 chemical etching Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11369986U JPH0248427Y2 (OSRAM) | 1986-07-23 | 1986-07-23 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11369986U JPH0248427Y2 (OSRAM) | 1986-07-23 | 1986-07-23 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6319572U JPS6319572U (OSRAM) | 1988-02-09 |
| JPH0248427Y2 true JPH0248427Y2 (OSRAM) | 1990-12-19 |
Family
ID=30995753
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11369986U Expired JPH0248427Y2 (OSRAM) | 1986-07-23 | 1986-07-23 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0248427Y2 (OSRAM) |
-
1986
- 1986-07-23 JP JP11369986U patent/JPH0248427Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6319572U (OSRAM) | 1988-02-09 |
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