JPH0244316A - Liquid crystal display device with auxiliary capacity - Google Patents
Liquid crystal display device with auxiliary capacityInfo
- Publication number
- JPH0244316A JPH0244316A JP63194420A JP19442088A JPH0244316A JP H0244316 A JPH0244316 A JP H0244316A JP 63194420 A JP63194420 A JP 63194420A JP 19442088 A JP19442088 A JP 19442088A JP H0244316 A JPH0244316 A JP H0244316A
- Authority
- JP
- Japan
- Prior art keywords
- auxiliary
- conductor
- transparent electrode
- display device
- liquid crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 12
- 239000004020 conductor Substances 0.000 claims abstract description 52
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 3
- 239000003990 capacitor Substances 0.000 claims description 16
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims 2
- 229910001887 tin oxide Inorganic materials 0.000 claims 2
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 1
- 229910003437 indium oxide Inorganic materials 0.000 claims 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 4
- 239000011159 matrix material Substances 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910000765 intermetallic Inorganic materials 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は液晶表示装置に係り、特に補助容量の形成に好
適な液晶表示装置に係る。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a liquid crystal display device, and particularly to a liquid crystal display device suitable for forming an auxiliary capacitor.
液晶表示装置は、薄型低消費電力の平面デイスプレィと
して製品化が進展している。このなかで、アクティブマ
トリクス型はコンクラストが高く、大型化の点で有利で
あり、まず小型品が実用化されるに至っている。Liquid crystal display devices are being increasingly commercialized as thin flat displays with low power consumption. Among these, the active matrix type has high contrast and is advantageous in terms of upsizing, and small products have been put into practical use first.
ＬＣＤの用途は通常のＴＶ、デイスプレィの外に、高精
細化して投射拡大する用途もある。この場合１強い光を
使うため、スイッチング素子の温度上昇も起ることから
、オフ電流が増加し、正常な保持機能がなくなる。また
温度上昇や劣化により、液晶の抵抗低下も起り、同様な
現象が発生する、これを防止するため、構造上の対策と
して、古くから補助容量を設けることが知られており、
その一方法が、特開昭６１−１３２２８号公報に述べら
れている。In addition to ordinary TVs and displays, LCDs are used for high-definition projection and magnification. In this case, 1. Since strong light is used, the temperature of the switching element also increases, resulting in an increase in off-state current and loss of normal holding function. In addition, due to temperature rise and deterioration, the resistance of the liquid crystal also decreases, causing a similar phenomenon.In order to prevent this, it has long been known to provide an auxiliary capacitor as a structural measure.
One such method is described in Japanese Patent Application Laid-Open No. 13228/1983.
以下第８図においてその基本構成を説明する。The basic configuration will be explained below with reference to FIG.
スイッチング素子２がマトリクス状に配置され、走査線
３、信号線４で接続されている。信号端子５から入った
信号は、走査端子６から入った信号によりスイッチング
素子２がオン状態になることにより、信号が画素用透明
電極１１に印加され、液晶を駆動する。この時、絶縁膜
を介して下に埋め込まれた補助用透明電極１２との間に
液晶容量の数倍以上補助容量が形成され、電荷の損失を
補償することになる０画素用透明電極１２は表示領域の
外部で補助導体１０と接続され電位が固定されている。Switching elements 2 are arranged in a matrix and connected by scanning lines 3 and signal lines 4. The signal input from the signal terminal 5 is applied to the pixel transparent electrode 11 by turning on the switching element 2 due to the signal input from the scanning terminal 6, thereby driving the liquid crystal. At this time, an auxiliary capacitance more than several times the liquid crystal capacitance is formed between the auxiliary transparent electrode 12 buried below through the insulating film, and the 0 pixel transparent electrode 12 compensates for the loss of charge. It is connected to the auxiliary conductor 10 outside the display area and its potential is fixed.
この構造において、表示領域が例ば１０インチ以上と大
きくなった場合１画素用透明電極１２における電位降下
が起り、補助導体１０との接続部から遠い部分では、補
助容量への充電あるいは放電が不完全になってしまう。In this structure, when the display area becomes large, for example, 10 inches or more, a potential drop occurs in the transparent electrode 12 for one pixel, and charging or discharging of the auxiliary capacitor is not possible in the part far from the connection with the auxiliary conductor 10. It becomes complete.
したがって、この構造では大きなＬＣＤは駆動できなく
なる。Therefore, this structure cannot drive a large LCD.
上記従来技術は、補助容量透明電極における電位降下の
点に配慮がされておらず、大型化した場合の駆動能力に
問題があった。The above-mentioned conventional technology does not take into consideration the potential drop in the auxiliary capacitor transparent electrode, and there is a problem with the driving ability when the device is enlarged.
本発明の目的は、補助容量透明電極における電位降下を
効果的に防止する手段を提供するにある。An object of the present invention is to provide means for effectively preventing a potential drop in a storage capacitor transparent electrode.
本発明の目的は、表示領域内にも補助導体を設け、かつ
補助容量用透明電極とを効果的に接続するため、中間導
体を設けることにより達成される。The object of the present invention is achieved by providing an auxiliary conductor also within the display area and providing an intermediate conductor for effective connection with the transparent electrode for auxiliary capacitance.
中間導体は補助容量用透明電極と良好にコンタクトし、
また中間導体は補助導体とも良好にコンタクトするにれ
によって補助容量用透明電極と補助導体は良好にコンタ
クトされることになり。The intermediate conductor makes good contact with the transparent electrode for storage capacitance,
Further, since the intermediate conductor is in good contact with the auxiliary conductor, the transparent electrode for auxiliary capacitance and the auxiliary conductor are in good contact with each other.
補助容量用透明電極による電位降下は防止されることに
なる。Potential drop due to the transparent electrode for auxiliary capacitance is prevented.
以下本発明の実施例を第１図において説明する。 An embodiment of the present invention will be described below with reference to FIG.
基本的な構成は先の第８図と同様であるが、補助導体１
０は走査線と平行に設けられている。補助容量透明電極
導体１３を介して低抵抗の補助導体１０に接続されてい
る。補助導体１０は各画素に延長されているため、どの
画素においても補助容量９は正常に動作する。The basic configuration is the same as that shown in Figure 8 above, but the auxiliary conductor 1
0 is provided parallel to the scanning line. The auxiliary capacitor is connected to a low resistance auxiliary conductor 10 via a transparent electrode conductor 13 . Since the auxiliary conductor 10 is extended to each pixel, the auxiliary capacitor 9 operates normally in any pixel.
次にさらに本発明による補助容量の具体的な製法と構造
を説明する。第２図は第１図におけるＡ−Ａ’断面図を
示す。ガラス板１上に多結晶シリコン１４が形成される
。このとき、本発明の特徴である中間導体１３を同時に
形成する。これは多結晶シリコン１４と同一材料を用い
る。ゲート絶縁膜１５、ゲート１６を形成し、イオン注
入法でｎ土層のソース・ドレインを形成する。この時同
時に中間導体１３もｎ÷化し、低抵抗化する。熱処理し
て注入したイオンを活性化する。中間導体１３の上に補
助導体１０を形成し、４００〜４５０℃でシンタリング
してコンタクトを取る。Next, the specific manufacturing method and structure of the auxiliary capacitor according to the present invention will be further explained. FIG. 2 shows a sectional view taken along the line AA' in FIG. Polycrystalline silicon 14 is formed on glass plate 1 . At this time, the intermediate conductor 13, which is a feature of the present invention, is formed at the same time. This uses the same material as the polycrystalline silicon 14. A gate insulating film 15 and a gate 16 are formed, and an n-soil layer source/drain is formed by ion implantation. At this time, the intermediate conductor 13 also becomes n÷ and has a low resistance. The implanted ions are activated by heat treatment. The auxiliary conductor 10 is formed on the intermediate conductor 13 and sintered at 400 to 450° C. to make contact.
この補助導体は例ばアルミニウムで、第１図の走査線３
と同時に形成することができる。次に補助容量用透明電
極１２として、ＩＴＯを形成し、中間導体１３にコンタ
クトさ−せる。この上に層間絶縁膜１７を形成する。ス
イッチング素子２のソース・ドレインにコンタクト窓を
開け、信号電極５を形成する。この上に画素用透明ｔｉ
ｌｌをＩＴＯで形成し、補助容量を持つアクティブマト
リクス基板が完成する。この過程において、層間絶縁膜
１７は約４００℃で形成されるが、この熱処理が、埋れ
込まれたＩＴＯ−多結晶シリコン−ＡＱのコンタクト部
分に作用する。しかし、多結晶シリコン−ＡＱのコンタ
クトはこの程度の熱処理では良好な方向に変化し、ＩＴ
Ｏ−多結晶シリコンのコンタクト状態もほとんど劣化し
ない。したがって完成した後の補助容量の動作は正常な
ものとなる。This auxiliary conductor is made of aluminum, for example, and is located at scanning line 3 in FIG.
can be formed at the same time. Next, ITO is formed as the auxiliary capacitance transparent electrode 12 and brought into contact with the intermediate conductor 13. An interlayer insulating film 17 is formed on this. Contact windows are opened in the source and drain of the switching element 2, and signal electrodes 5 are formed. On top of this is a transparent ti for pixels.
ll is formed of ITO, and an active matrix substrate with auxiliary capacitance is completed. In this process, the interlayer insulating film 17 is formed at about 400° C., and this heat treatment acts on the buried ITO-polycrystalline silicon-AQ contact portion. However, polycrystalline silicon-AQ contacts change in a favorable direction with this degree of heat treatment, and IT
The contact condition of O-polycrystalline silicon also hardly deteriorates. Therefore, the operation of the auxiliary capacitor after completion is normal.
第３図はこの様な補助容量構造を持つアクティブマトリ
クス基板の全体構成を示す。補助導体１０は１表示領域
内部から表示領域周辺に沿って外部に引き出される。FIG. 3 shows the overall structure of an active matrix substrate having such an auxiliary capacitance structure. The auxiliary conductor 10 is drawn out from inside one display area along the periphery of the display area.
第４図は本発明の異なる実施例を示す。基本的には第２
図と同様な構造であるが、中間導体１３に補助導体１０
と補助容量用透明電極１２が同時にコンタクトされてい
るが、前者の上に後者が重なる構造となっており、両者
が二重の形態でコンタクトされている点に特徴があり、
中間導体１３に異常があっても所定のコンタクトが取れ
る構造である。FIG. 4 shows a different embodiment of the invention. Basically the second
The structure is similar to that shown in the figure, but the auxiliary conductor 10 is attached to the intermediate conductor 13.
and the transparent electrode 12 for auxiliary capacitance are contacted at the same time, but the structure is such that the latter overlaps the former, and the two are characterized in that they are in double contact.
The structure is such that a predetermined contact can be made even if there is an abnormality in the intermediate conductor 13.
第５図は、異なるスイッチング素子２（正スタガ構造）
に本発明を適用した構造を示す。ソース・ドレインとな
る多結晶シリコン１４と同時に中間導体１３を形成する
。この後、能動層１８とゲート絶縁膜１５を形成する。Figure 5 shows a different switching element 2 (positive staggered structure).
shows a structure to which the present invention is applied. The intermediate conductor 13 is formed simultaneously with the polycrystalline silicon 14 that will become the source and drain. After this, an active layer 18 and a gate insulating film 15 are formed.
ここで、ゲート電極１９を別途形成し、この時点で同時
に補助導体１０を形成する。次に補助容量用透明電極１
２を形成し、層間絶縁膜１７を形成し、コンタクト窓を
開けた後、信号電極５を形成し、画素用透明電極１１を
形成する。スイッチング素子の構造が変っても、以上の
プロセスで本発明を同様に実施できる。Here, the gate electrode 19 is formed separately, and the auxiliary conductor 10 is formed at the same time. Next, transparent electrode 1 for auxiliary capacitance
2 is formed, an interlayer insulating film 17 is formed, and a contact window is opened, then a signal electrode 5 is formed, and a transparent electrode 11 for a pixel is formed. Even if the structure of the switching element is changed, the present invention can be implemented in the same manner using the above process.
第６図は本発明の異なる実施例を示す。第８図と同様、
表示領域内の信号線と平行な方向に補助導体１０が設置
されている。Ｂ−Ｂ’の断面は第２図と同一である。FIG. 6 shows a different embodiment of the invention. Similar to Figure 8,
An auxiliary conductor 10 is installed in a direction parallel to the signal line within the display area. The cross section taken along line BB' is the same as that in FIG.
第７図は本発明の異なる実施例を示す。アクティブマト
リクス基板に走査回路２ｏと信号回路２１が内蔵された
構成である。補助導体１０は走査回路２０及び信号回路
２１と表示領域との間に設置され、外部に引き出されて
いる。FIG. 7 shows a different embodiment of the invention. This configuration has a scanning circuit 2o and a signal circuit 21 built into an active matrix substrate. The auxiliary conductor 10 is installed between the scanning circuit 20 and the signal circuit 21 and the display area, and is led out.
以上述べた実施例では中間導体として多結晶シリコン、
スイッチング素子として多結晶シリコンＭＯ３ＦＥＴを
述べたが、非晶質、単結晶を用いた場合も同様に適用で
きる。また中間導体としては金、白金等酸化されにくい
金属、金属間化合物、酸化物導電体が適用でき、補助動
体としては、タングステン、モリブデン、チタン等の低
抵抗金属の外、金属間化合物、酸化物導電体も使用でき
る。In the embodiments described above, polycrystalline silicon is used as the intermediate conductor.
Although polycrystalline silicon MO3FET has been described as a switching element, it is also applicable to cases where amorphous or single crystal is used. In addition, as the intermediate conductor, metals that are difficult to oxidize such as gold and platinum, intermetallic compounds, and oxide conductors can be used.As the auxiliary conductor, in addition to low resistance metals such as tungsten, molybdenum, and titanium, intermetallic compounds and oxides can be used. Electrical conductors can also be used.
本発明によれば、補助容量透明電極と補助導体とを良好
にコンタクトでき、大型ＬＣＤにおいても正常な補助容
量の効果を実現できる。According to the present invention, the auxiliary capacitance transparent electrode and the auxiliary conductor can be brought into good contact with each other, and a normal auxiliary capacitance effect can be realized even in a large LCD.
第１図及び第６図は本発明による画素部分の平面構成図
、第２図、第４図、第５図は本発明による画素部分の断
面図、第３図及び第７図は本発明によるアクティブマト
リクス基板平面図、第８図は従来技術による画素部分の
平面構成図を示す。
２・・・スイッチング素子、１１・・・画素用透明電極
、１２・・・補助容量用透明電極、１３・・・中間導体
、１ｏ・・・補助導体、１７・・・層間絶縁膜。1 and 6 are plan configuration diagrams of a pixel portion according to the present invention, FIGS. 2, 4, and 5 are sectional views of a pixel portion according to the present invention, and FIGS. 3 and 7 are diagrams according to the present invention. FIG. 8 is a plan view of an active matrix substrate, and FIG. 8 shows a plan view of a pixel portion according to the prior art. 2... Switching element, 11... Transparent electrode for pixel, 12... Transparent electrode for auxiliary capacitance, 13... Intermediate conductor, 1o... Auxiliary conductor, 17... Interlayer insulating film.
Claims (1)
量用透明電極と、これを外部に接続するための補助導体
との間に、第２の導体を介在させ、電気的接続を成すこ
とを特徴とする補助容量付液晶表示装置。 ２、請求の範囲第１項において、補助容量用透明電極は
酸化スズ系透明電極、補助導体は金属膜、あるいは、抵
抗抗導体、第２の導体は半導体層であることを特徴とす
る補助容量付液晶表示装置。 ３、請求の範囲第１項または第２項において、補助容量
用透明電極は酸化スズ・インジウム、補助導体はアルミ
ニウム、第２の導体はシリコンであることを特徴とする
補助容量付液晶表示装置。 ４、請求の範囲第１項、第２項、または第３項において
、第２の導体であるシリコン膜は、表示装置を駆動する
スイッチング素子を構成する単結晶、多結晶又は非晶質
シリコンであることを特徴とする補助容量付液晶表示装
置。[Claims] 1. In a liquid crystal display device with an auxiliary capacitor, a second conductor is interposed between the auxiliary capacitor transparent electrode and an auxiliary conductor for connecting it to the outside, and an electrical A liquid crystal display device with an auxiliary capacitor, which is characterized by forming a connection. 2. The auxiliary capacitor according to claim 1, wherein the auxiliary capacitor transparent electrode is a tin oxide-based transparent electrode, the auxiliary conductor is a metal film or a resistive conductor, and the second conductor is a semiconductor layer. LCD display device. 3. A liquid crystal display device with an auxiliary capacitor according to claim 1 or 2, characterized in that the transparent electrode for the auxiliary capacitor is made of tin oxide/indium oxide, the auxiliary conductor is aluminum, and the second conductor is silicon. 4. In claim 1, 2, or 3, the silicon film that is the second conductor is monocrystalline, polycrystalline, or amorphous silicon that constitutes a switching element that drives a display device. A liquid crystal display device with an auxiliary capacitance, which is characterized by the following.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63194420A JPH0244316A (en) | 1988-08-05 | 1988-08-05 | Liquid crystal display device with auxiliary capacity |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63194420A JPH0244316A (en) | 1988-08-05 | 1988-08-05 | Liquid crystal display device with auxiliary capacity |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0244316A true JPH0244316A (en) | 1990-02-14 |
Family
ID=16324308
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63194420A Pending JPH0244316A (en) | 1988-08-05 | 1988-08-05 | Liquid crystal display device with auxiliary capacity |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0244316A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06194690A (en) * | 1992-10-08 | 1994-07-15 | Hitachi Ltd | Liquid crystal light valve and projection type display formed by using the valve |
| US5574582A (en) * | 1992-04-10 | 1996-11-12 | Matsushita Electric Industrial Co., Ltd | Active matrix liquid crystal display panel with scanning electrodes acting as capacitor electrode and black matrix |
-
1988
- 1988-08-05 JP JP63194420A patent/JPH0244316A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5574582A (en) * | 1992-04-10 | 1996-11-12 | Matsushita Electric Industrial Co., Ltd | Active matrix liquid crystal display panel with scanning electrodes acting as capacitor electrode and black matrix |
| JPH06194690A (en) * | 1992-10-08 | 1994-07-15 | Hitachi Ltd | Liquid crystal light valve and projection type display formed by using the valve |
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