JPH0243718B2 - - Google Patents
Info
- Publication number
- JPH0243718B2 JPH0243718B2 JP57171212A JP17121282A JPH0243718B2 JP H0243718 B2 JPH0243718 B2 JP H0243718B2 JP 57171212 A JP57171212 A JP 57171212A JP 17121282 A JP17121282 A JP 17121282A JP H0243718 B2 JPH0243718 B2 JP H0243718B2
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- melt
- crystal
- partition wall
- thermal convection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000013078 crystal Substances 0.000 claims description 34
- 239000000155 melt Substances 0.000 claims description 17
- 238000005192 partition Methods 0.000 description 22
- 238000000034 method Methods 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000005484 gravity Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 230000005499 meniscus Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
- C30B15/305—Stirring of the melt
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17121282A JPS5964590A (ja) | 1982-09-30 | 1982-09-30 | 結晶成長用坩堝 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17121282A JPS5964590A (ja) | 1982-09-30 | 1982-09-30 | 結晶成長用坩堝 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5964590A JPS5964590A (ja) | 1984-04-12 |
| JPH0243718B2 true JPH0243718B2 (fr) | 1990-10-01 |
Family
ID=15919110
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17121282A Granted JPS5964590A (ja) | 1982-09-30 | 1982-09-30 | 結晶成長用坩堝 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5964590A (fr) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0925192A (ja) * | 1995-07-07 | 1997-01-28 | Nec Corp | 単結晶育成用るつぼおよび単結晶育成法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5891097A (ja) * | 1981-11-24 | 1983-05-30 | Hitachi Ltd | 単結晶製造装置 |
-
1982
- 1982-09-30 JP JP17121282A patent/JPS5964590A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5891097A (ja) * | 1981-11-24 | 1983-05-30 | Hitachi Ltd | 単結晶製造装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5964590A (ja) | 1984-04-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4329195A (en) | Lateral pulling growth of crystal ribbons | |
| US4874458A (en) | Single crystal growing method having improved melt control | |
| EP0261498A2 (fr) | Appareillage pour le tirage de cristaux | |
| US4322263A (en) | Method for horizontal ribbon crystal growth | |
| US5114528A (en) | Edge-defined contact heater apparatus and method for floating zone crystal growth | |
| US4944925A (en) | Apparatus for producing single crystals | |
| US4957712A (en) | Apparatus for manufacturing single silicon crystal | |
| JPH0139998B2 (fr) | ||
| EP0104741A1 (fr) | Procédé pour la croissance de matériaux cristallins | |
| JPH0243718B2 (fr) | ||
| JP2690419B2 (ja) | 単結晶の育成方法及びその装置 | |
| JPS598695A (ja) | 結晶成長装置 | |
| JPS6236096A (ja) | 単結晶の製造方法およびその装置 | |
| JP2010030847A (ja) | 半導体単結晶の製造方法 | |
| JP2814796B2 (ja) | 単結晶の製造方法及びその装置 | |
| JPS60195082A (ja) | 半導体結晶の製造装置 | |
| US4217167A (en) | Method of growing large low defect, monocrystals of BeO | |
| JPS5964589A (ja) | 結晶の成長方法 | |
| JPH0733303B2 (ja) | 結晶成長装置 | |
| JPH07206584A (ja) | 化合物半導体単結晶の製造方法 | |
| JP2717685B2 (ja) | チョクラルスキー法による結晶育成の方法及び装置 | |
| JPH05319973A (ja) | 単結晶製造装置 | |
| JPS5812228B2 (ja) | 結晶育成装置と結晶成長方法 | |
| JPS60122791A (ja) | 液体封止結晶引上方法 | |
| JPS59111994A (ja) | 結晶の成長方法 |