JPH0243704B2 - SERAMITSUKUSUTOKINZOKUTONOSETSUGOHOHO - Google Patents
SERAMITSUKUSUTOKINZOKUTONOSETSUGOHOHOInfo
- Publication number
- JPH0243704B2 JPH0243704B2 JP5553285A JP5553285A JPH0243704B2 JP H0243704 B2 JPH0243704 B2 JP H0243704B2 JP 5553285 A JP5553285 A JP 5553285A JP 5553285 A JP5553285 A JP 5553285A JP H0243704 B2 JPH0243704 B2 JP H0243704B2
- Authority
- JP
- Japan
- Prior art keywords
- metal layer
- metal
- base material
- joining
- ceramics
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910052751 metal Inorganic materials 0.000 claims description 115
- 239000002184 metal Substances 0.000 claims description 115
- 239000000463 material Substances 0.000 claims description 44
- 239000000919 ceramic Substances 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 23
- 238000005304 joining Methods 0.000 claims description 21
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 11
- 238000009792 diffusion process Methods 0.000 claims description 8
- 239000002131 composite material Substances 0.000 claims description 7
- 229910000838 Al alloy Inorganic materials 0.000 claims description 5
- 239000011888 foil Substances 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 19
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 18
- 229910045601 alloy Inorganic materials 0.000 description 9
- 239000000956 alloy Substances 0.000 description 9
- 229910052759 nickel Inorganic materials 0.000 description 8
- 229910052742 iron Inorganic materials 0.000 description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 6
- 150000002739 metals Chemical class 0.000 description 6
- 229910000990 Ni alloy Inorganic materials 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 238000005266 casting Methods 0.000 description 4
- 230000006378 damage Effects 0.000 description 4
- 230000008646 thermal stress Effects 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 229910000531 Co alloy Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- -1 or sialon Substances 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910001018 Cast iron Inorganic materials 0.000 description 2
- 229910000640 Fe alloy Inorganic materials 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 238000005219 brazing Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- YPFNIPKMNMDDDB-UHFFFAOYSA-K 2-[2-[bis(carboxylatomethyl)amino]ethyl-(2-hydroxyethyl)amino]acetate;iron(3+) Chemical compound [Fe+3].OCCN(CC([O-])=O)CCN(CC([O-])=O)CC([O-])=O YPFNIPKMNMDDDB-UHFFFAOYSA-K 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000599 Cr alloy Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910001096 P alloy Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000788 chromium alloy Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910052575 non-oxide ceramic Inorganic materials 0.000 description 1
- 239000011225 non-oxide ceramic Substances 0.000 description 1
- 229910052574 oxide ceramic Inorganic materials 0.000 description 1
- 239000011224 oxide ceramic Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Description
【発明の詳細な説明】
この発明は、セラミツクスと金属との接合方法
の改良に関し、殊に熱応力緩和体をインサート材
として介在させる接合方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an improvement in a method for joining ceramics and metal, and particularly to a joining method in which a thermal stress relaxation body is interposed as an insert material.
一般にセラミツクスは、耐摩耗性、耐熱性、耐
食性等にすぐれており、機械部品、電子部品等へ
の利用は著しいものがあるが、セラミツクは複雑
な形状の部品の成形、加工が困難であること、お
よび金属に比べて非常に高価であることなどの欠
点がある。そして、前述の成形、加工が困難であ
ることに対しては、成形、加工が容易である金属
を成形、加工して得た部品にセラミツクスを接合
することによつて所望の部品を得ることが行われ
ている。このため、各種の接合方法が発明され、
提案されている。その中には、拡散接合方法を含
む圧接法、ろう付け法があり、強固な接合体が得
られるので、非常に有効な接合方法であるにもか
かわらず接合の際、高温を必要とする。
In general, ceramics have excellent wear resistance, heat resistance, corrosion resistance, etc., and are often used for mechanical parts, electronic parts, etc. However, ceramics are difficult to mold and process into parts with complex shapes. , and that they are very expensive compared to metals. In response to the above-mentioned difficulty in forming and processing, it is possible to obtain desired parts by bonding ceramics to parts obtained by forming and processing metals that are easy to form and process. It is being done. For this reason, various joining methods have been invented,
Proposed. Among them, there are pressure welding methods, including diffusion bonding methods, and brazing methods, which are very effective bonding methods because they produce a strong bonded body, but require high temperatures during bonding.
ところが、このような高温の元における接合
後、室温まで冷却したとき、セラミツクスと金属
との接合界面に、熱膨張係数の差による残留応力
が発生し、セラミツクスの破壊または接合界面で
の剥離が起きる。そして、接合体が大形になる
程、この傾向は著しくなると言う問題があつた。
なお、このような問題の解決を図るものとして、
この発明の出願人から特願昭59−43086号、特願
昭59−112689号、特願昭59−214774号などの出願
があることを参考的に示す。
However, after bonding under such high temperatures, when the bond is cooled to room temperature, residual stress occurs at the bond interface between the ceramic and the metal due to the difference in coefficient of thermal expansion, resulting in destruction of the ceramic or peeling at the bond interface. . A problem has arisen in that this tendency becomes more pronounced as the joined body becomes larger.
In addition, in order to solve such problems,
It is shown for reference that the applicant of this invention has filed applications such as Japanese Patent Application No. 59-43086, Japanese Patent Application No. 59-112689, and Japanese Patent Application No. 59-214774.
この発明は、セラミツクスと金属との接合に当
り、インサート材としてセラミツクス母材に接す
る側にアルミニウム、アルミニウム合金またはア
ルミニウム複合体による第１金属層を形成し、次
にセラミツクスと同程度の熱膨張係数を有する第
２金属層を形成させる。そして更に第２金属層と
金属母材との間に第１金属層と同じ金属または第
２金属層と金属母材の中間の熱膨張係数を有する
金属の第３金属層を介在させて接合させる。
In this invention, when joining ceramics and metal, a first metal layer made of aluminum, aluminum alloy, or aluminum composite is formed on the side in contact with the ceramic base material as an insert material, and then a first metal layer made of aluminum, an aluminum alloy, or an aluminum composite is formed as an insert material. A second metal layer is formed. Further, a third metal layer of the same metal as the first metal layer or a metal having a coefficient of thermal expansion intermediate between that of the second metal layer and the metal base material is interposed and bonded between the second metal layer and the metal base material. .
セラミツクスと同等の熱膨張係数を有する第２
金属層を介在させることによつて、金属母材から
受ける熱応力を遮断し、セラミツクス母材に伝え
ない。
The second material has a coefficient of thermal expansion equivalent to that of ceramics.
By interposing the metal layer, thermal stress received from the metal base material is blocked and is not transmitted to the ceramic base material.
そして、セラミツクスおよび金属の両方に接合
反応性をもつた第１金属層によつてセラミツクス
母材と第２金属層との接合を容易にする。 The first metal layer, which has bonding reactivity to both ceramics and metals, facilitates bonding between the ceramic base material and the second metal layer.
更に第３金属層を第２金属層と金属母材との間
に介在させて第２金属層と金属母材との接合を容
易にする。第３金属層としてアルミニウム、その
合金またはその複合体を介在させて接合するとき
には第１金属層の接合温度つまりアルミニウムの
融点約660℃以下の温度でよく、この場合はセラ
ミツクス母材、第１金属層、第２金属層、第３金
属層および金属母材は１工程で接合できる。しか
しながら、一般に金属母材としてはステンレス鋼
などの鋼材が使われることが多く、接合温度が
660℃を越えることが多い。このような場合でも、
第２金属層と金属母材とが同系の金属であれば、
その間の接合はしやすく、一般には両者の熱膨張
係数の差が小さい。そこで、第３金属層を介在さ
せずに第２金属層と金属母材を接合したものに、
第１金属層を介してセラミツクス母材を接合する
こともできるが、強固な接合体を得るには第３金
属層を介在させることが望ましい。一方、第２金
属層と金属母材とが異系の金属であれば、一般に
その間の接合はむずかしく、この間に第３金属層
を介在させないと接合困難である。又、一般に両
者の熱膨張係数差は大となり接合後界面に熱応力
が残留する。従つてこの第３金属層を第２金属層
と金属母材との中間の熱膨張係数を有する金属と
することが必要であり、それによつて金属母材の
熱応力を緩和させ、接合を確実にする。そして、
この場合は一般に第２金属層、第３金属層および
金属母材をその接合最適温度約700℃以上で接合
する工程と、その後、第１金属層を介在させて約
650℃以下でセラミツクス母材と接合する工程と
がとられる。 Further, a third metal layer is interposed between the second metal layer and the metal base material to facilitate bonding between the second metal layer and the metal base material. When bonding is performed with aluminum, its alloy, or a composite thereof interposed as the third metal layer, the bonding temperature of the first metal layer, that is, the melting point of aluminum, approximately 660°C or less may be used.In this case, the ceramic base material, the first metal The layers, the second metal layer, the third metal layer and the metal matrix can be joined in one step. However, steel materials such as stainless steel are generally used as the metal base material, and the joining temperature is low.
Temperatures often exceed 660℃. Even in such cases,
If the second metal layer and the metal base material are metals of the same type,
The bonding between them is easy, and the difference in their thermal expansion coefficients is generally small. Therefore, the second metal layer and the metal base material are bonded without intervening the third metal layer.
Although it is possible to join the ceramic base materials through the first metal layer, it is desirable to interpose a third metal layer in order to obtain a strong joined body. On the other hand, if the second metal layer and the metal base material are different metals, it is generally difficult to bond them together, and it is difficult to bond them unless the third metal layer is interposed therebetween. Furthermore, the difference in thermal expansion coefficient between the two is generally large, and thermal stress remains at the interface after bonding. Therefore, it is necessary to make this third metal layer a metal with a thermal expansion coefficient intermediate between that of the second metal layer and the metal base material, thereby relieving the thermal stress of the metal base material and ensuring the bonding. Make it. and,
In this case, there is generally a step of joining the second metal layer, third metal layer, and metal base material at the optimum joining temperature of about 700°C or higher, and then a step of joining the second metal layer, third metal layer, and metal base material at a temperature of about 700°C or higher, and then interposing the first metal layer to about 700°C or higher.
A step is taken to bond it to the ceramic base material at a temperature of 650°C or lower.
実施例 １
セラミツクス母材（炭化ケイ素；外径125mm、
内径113mm、厚さ10mm）１、第１金属層（純アル
ミニウムA1050；外径125mm、内径113mm、厚さ
0.6mm）２、第２金属層（鉄、ニツケル、コバル
ト合金鋳物；３％Ｃ、1.8〜2.8％Si、0.3％Mn、
30〜33％Ni、数％Co；外径125mm、内径113mm、
厚さ３mm）３、第３金属層（第１金属と同じ）
４、金属母材（ステンレス鋼SuS304L；外径129
mm、内径103mm、厚さ８mm）５をアセトン中で10
分間超音波洗浄し、第１図の様に積層し、約
10-4Torrの真空中で、１Kg／mm2の加圧、600℃×
30分間、拡散接合した。室温冷却後、セラミツク
ス母材の剥離、破壊は全くおこらず良好な接合体
が得られた。Example 1 Ceramics base material (silicon carbide; outer diameter 125 mm,
Inner diameter 113mm, thickness 10mm) 1. First metal layer (pure aluminum A1050; outer diameter 125mm, inner diameter 113mm, thickness
0.6mm) 2. Second metal layer (iron, nickel, cobalt alloy casting; 3%C, 1.8~2.8%Si, 0.3%Mn,
30~33%Ni, a few%Co; outer diameter 125mm, inner diameter 113mm,
3. Third metal layer (same as the first metal)
4. Metal base material (stainless steel SuS304L; outer diameter 129
mm, inner diameter 103 mm, thickness 8 mm) 5 in acetone for 10
Ultrasonic cleaning for minutes, stacking as shown in Figure 1, and approx.
In a vacuum of 10 -4 Torr, pressurized at 1Kg/ mm2 , 600℃×
Diffusion bonding was performed for 30 minutes. After cooling to room temperature, no peeling or destruction of the ceramic base material occurred, and a good bonded body was obtained.
実施例 ２
実施例１と同様のセラミツクス、金属母材を用
い、この間に実施例１と同様の第１金属層を介在
させて同様の条件で拡散接合して室温に冷却した
ところ、セラミツクスに著しい破壊がおこつた。Example 2 Using ceramics and a metal base material similar to those in Example 1, diffusion bonding was performed under the same conditions as in Example 1 with a first metal layer interposed between them, and the ceramics were cooled to room temperature. Destruction occurred.
実施例 ３
実施例１と同様の第２金属、金属母材と、別の
第３金属層（純チタンJIS2種；外径125mm、内経
113mm、厚さ0.5mm）をアセトン中で10分間超音波
洗浄後、約10-4Torrの真空中で、加圧２Kg／mm2、
830℃×30分間拡散接合して、第２金属層／第３
金属層／母材金属層の複合体を得た。これと実施
例１と同様のセラミツクスと第１金属をアセトン
洗浄後、実施例１と同様の条件で拡散接合した。
室温に冷却後、セラミツクス母材に全く異常はお
こらず良好な接合体が得られた。Example 3 The same second metal and metal base material as in Example 1, and another third metal layer (pure titanium JIS class 2; outer diameter 125 mm, inner diameter
113 mm, thickness 0.5 mm) in acetone for 10 minutes, and then in a vacuum of approximately 10 -4 Torr under a pressure of 2 Kg/mm 2 .
Diffusion bonding was performed at 830°C for 30 minutes to form the second metal layer/third metal layer.
A composite of metal layer/base metal layer was obtained. This and the same ceramics and first metal as in Example 1 were cleaned with acetone and then diffusion bonded under the same conditions as in Example 1.
After cooling to room temperature, no abnormality occurred in the ceramic base material, and a good joined body was obtained.
（他の実施例）
他の実施例としてセラミツクス母材は、アルミ
ナ、ジルコニア、マグネシア、サイアロン等の酸
化物系セラミツクス、炭化ケイ素、窒化ケイ素等
の非酸化物系セラミツクスとすることができ、金
属母材はステンレス鋼、チタン及びチタン合金、
ニツケル及びニツケル合金等とすることができ
る。(Other Examples) As another example, the ceramic base material may be an oxide ceramic such as alumina, zirconia, magnesia, or sialon, or a non-oxide ceramic such as silicon carbide or silicon nitride. Materials are stainless steel, titanium and titanium alloys,
It can be made of nickel, nickel alloy, etc.
第１金属層はアルミニウム、アルミニウム合
金、アルミニウムをマトリツクスとする複合材、
アルミニウム合金のクラツド板とすることができ
る。第２金属層は、鉄、ニツケル、コバルト系の
合金鋳物…鉄、ニツケル合金」を、「鉄、ニツケ
ル、コバルト系の合金鋳物（片状、粒状及びその
中間的形態の黒鉛鋳鉄などもある）若しくはその
合金、鉄、ニツケル系合金鋳物（片状、粒状及び
その中間的形態の黒鉛鋳鉄などもある）若しくは
その合金、鉄、ニツケル、クロム系合金、鉄、ニ
ツケル、クロム、チタン系合金、鉄、ニツケル、
コバルト、クロム系合金、鉄、リン系合金超硬合
金、燒結合金等の低熱膨張係数の金属とすること
ができる。第３金属層は、前記の第１金属、また
は銀、チタン、ニツケル、ジルコニウム、モリブ
デン、銅、マンガン、クロム、鉄、ニオブ、等の
純金属若しくはその合金とすることができ、ある
いはまたそれらの粉末とすることができる。これ
らの第１金属層および第３金属層は箔、板または
物理的化学的方法で形成した薄膜とすることがで
きる。但し、第２金属層は板状が望ましい。 The first metal layer is aluminum, an aluminum alloy, a composite material containing aluminum as a matrix,
It can be an aluminum alloy clad plate. The second metal layer is made of iron, nickel, and cobalt alloy castings (iron, nickel alloys), and iron, nickel, and cobalt alloy castings (including graphite cast iron in flaky, granular, and intermediate forms). or its alloys, iron, nickel-based alloy castings (including graphite cast iron in flaky, granular, and intermediate forms) or their alloys, iron, nickel, chromium-based alloys, iron, nickel, chromium, titanium-based alloys, iron , nickel,
It can be a metal with a low coefficient of thermal expansion, such as cobalt, chromium alloy, iron, phosphorus alloy, cemented carbide, or sintered alloy. The third metal layer can be the first metal, or a pure metal such as silver, titanium, nickel, zirconium, molybdenum, copper, manganese, chromium, iron, niobium, etc., or an alloy thereof, or an alloy thereof. It can be made into powder. These first metal layer and third metal layer can be foils, plates, or thin films formed by physical and chemical methods. However, the second metal layer is preferably plate-shaped.
更に、第１及び第３金属は、拡散接合または他
の接合方法によつて第２金属とあらかじめ一体化
した後セラミツクス母材と金属母材との間に介在
させて拡散接合してもよい。また、セラミツクス
母材と第１金属層とを接合後、第１金属層と第２
金属層／第３金属層／金属母材との複合体とを接
合してもよい。この様な接合順序は目的に応じ適
宜選ばれる。また更に、接合方法ははんだ付け、
ろう付け摩擦圧接など他の接合方法とすることが
できる。 Further, the first and third metals may be integrated with the second metal in advance by diffusion bonding or other bonding methods, and then interposed between the ceramic base material and the metal base material and diffusion bonded. Further, after bonding the ceramic base material and the first metal layer, the first metal layer and the second metal layer are bonded.
The metal layer/third metal layer/composite with the metal base material may be joined. Such a bonding order is appropriately selected depending on the purpose. Furthermore, the joining method is soldering,
Other joining methods such as brazing and friction welding can be used.
セラミツクスと金属の接合に於いて、熱接合の
際、両者の熱膨張係数の差に起因して発生する残
留応力を吸収し、セラミツクスの破壊または界面
剥離を防止することができる。
When bonding ceramics and metal, it is possible to absorb residual stress generated due to the difference in thermal expansion coefficients between the two during thermal bonding, thereby preventing destruction of the ceramic or interfacial peeling.
図面は、この発明の実施例を示すものであり、
第１図は側面図、第２図は上面図である。
図面において、１はセラミツクス母材、２は第
１金属層、３は第２金属層、４は第３金属層、５
は金属母材である。
The drawings illustrate embodiments of the invention,
FIG. 1 is a side view, and FIG. 2 is a top view. In the drawings, 1 is a ceramic base material, 2 is a first metal layer, 3 is a second metal layer, 4 is a third metal layer, 5
is the metal base material.
Claims (1)
在させて接合する接合方法において、 前記インサート材は、セラミツクス母材に接す
る側をアルミニウム、アルミニウム合金またはア
ルミニウム複合体の第１金属層とし、次に前記セ
ラミツクス母材と同程度の熱膨張係数を有する第
２金属層とし、更に金属母材に接する側を第３金
属層として形成した熱応力緩和体である前記セラ
ミツクスと金属との接合方法。 ２ 前記第３金属層は、前記第１金属層と同じ金
属である特許請求の範囲第１項記載のセラミツク
スと金属との接合方法。 ３ 前記第３金属層は、前記第２金属層と前記金
属母材の中間の熱膨張係数を有する金属である特
許請求の範囲第１項記載のセラミツクスと金属と
の接合方法。 ４ 前記第１金属層は箔、薄膜または板である特
許請求の範囲第１項ないし第３項記載のセラミツ
クスと金属との接合方法。 ５ 前記第２金属層は板である特許請求の範囲第
１項ないし第３項記載のセラミツクスと金属との
接合方法。 ６ 前記第３金属層は箔、薄膜または板である特
許請求の範囲第１項ないし第３項記載のセラミツ
クスと金属との接合方法。 ７ 前記接合方法は拡散接合方法である特許請求
の範囲第１項ないし第６項記載のセラミツクスと
金属との接合方法。[Claims] 1. A joining method for joining ceramics and metal with an insert material interposed, wherein the insert material has a first metal layer of aluminum, aluminum alloy, or aluminum composite on the side in contact with the ceramic base material. Then, a second metal layer having a coefficient of thermal expansion comparable to that of the ceramic base material is formed, and a third metal layer is formed on the side in contact with the metal base material. Joining method. 2. The method of joining ceramics and metal according to claim 1, wherein the third metal layer is the same metal as the first metal layer. 3. The method of joining ceramics and metal according to claim 1, wherein the third metal layer is a metal having a coefficient of thermal expansion intermediate between that of the second metal layer and the metal base material. 4. The method of joining ceramics and metal according to claims 1 to 3, wherein the first metal layer is a foil, a thin film, or a plate. 5. The method of joining ceramics and metal according to claims 1 to 3, wherein the second metal layer is a plate. 6. The method of joining ceramics and metal according to any one of claims 1 to 3, wherein the third metal layer is a foil, a thin film, or a plate. 7. The method of joining ceramics and metal according to any one of claims 1 to 6, wherein the joining method is a diffusion joining method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5553285A JPH0243704B2 (en) | 1985-03-18 | 1985-03-18 | SERAMITSUKUSUTOKINZOKUTONOSETSUGOHOHO |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5553285A JPH0243704B2 (en) | 1985-03-18 | 1985-03-18 | SERAMITSUKUSUTOKINZOKUTONOSETSUGOHOHO |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61215273A JPS61215273A (en) | 1986-09-25 |
| JPH0243704B2 true JPH0243704B2 (en) | 1990-10-01 |
Family
ID=13001336
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5553285A Expired - Lifetime JPH0243704B2 (en) | 1985-03-18 | 1985-03-18 | SERAMITSUKUSUTOKINZOKUTONOSETSUGOHOHO |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0243704B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2610964B2 (en) * | 1988-09-30 | 1997-05-14 | ホーヤ 株式会社 | Manufacturing method of acousto-optic element |
| JP4008401B2 (en) | 2003-09-22 | 2007-11-14 | 日本碍子株式会社 | Manufacturing method of substrate mounting table |
| CN107263035B (en) * | 2017-07-12 | 2019-01-15 | 大连理工大学 | A kind of processing method of high flatness ultra-thin metal plates |
-
1985
- 1985-03-18 JP JP5553285A patent/JPH0243704B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61215273A (en) | 1986-09-25 |
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