JPH024265U - - Google Patents
Info
- Publication number
- JPH024265U JPH024265U JP8222188U JP8222188U JPH024265U JP H024265 U JPH024265 U JP H024265U JP 8222188 U JP8222188 U JP 8222188U JP 8222188 U JP8222188 U JP 8222188U JP H024265 U JPH024265 U JP H024265U
- Authority
- JP
- Japan
- Prior art keywords
- anode
- semiconductor substrate
- cathode side
- bevel groove
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 4
- 238000002161 passivation Methods 0.000 claims 1
- 239000011347 resin Substances 0.000 claims 1
- 229920005989 resin Polymers 0.000 claims 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
Landscapes
- Thyristors (AREA)
- Formation Of Insulating Films (AREA)
- Electrodes Of Semiconductors (AREA)
Description
第１図は、この考案による半導体素子の一実施
例としてのＧＴＯサイリスタの基板端面近傍の要
部断面図、第２図は、従来例のＧＴＯサイリスタ
の基板端面近傍の要部断面図、第３図は、第１図
に示した実施例の素子の、半導体基板の端面形成
前後の過程を示す断面図である。
１……Ｍｏ板、２……Ａ、４……カソード電
極、５……ゲート電極、６……ベベル溝、７……
シリコンゴム、２１……Ａあがり、３１……ｐ
エミツタ、３２……ｎベース、３３……ｐベース
、３４……ｎエミツタ、３５……空乏層。
FIG. 1 is a cross-sectional view of a main part near the end surface of a substrate of a GTO thyristor as an example of a semiconductor device according to this invention, FIG. 2 is a cross-sectional view of a main part near an end surface of a substrate of a conventional GTO thyristor, and FIG. The figure is a cross-sectional view showing the process before and after the end face of the semiconductor substrate is formed in the element of the embodiment shown in FIG. DESCRIPTION OF SYMBOLS 1... Mo board, 2... A, 4... Cathode electrode, 5... Gate electrode, 6... Bevel groove, 7...
Silicone rubber, 21...A finished, 31...p
Emitter, 32...n base, 33...p base, 34...n emitter, 35...depletion layer.
Claims (1)
た半導体基板の最周縁端より内側に、カソード側
表面からアノード層に達するベベル溝が設けられ
ているものにおいて、このベベル溝の外側の基板
端面のカソード側エツジ部に、パツシベーシヨン
用レジンの被覆によつても露出しない程度の面取
りが施されていることを特徴とするアノードシヨ
ート形サイリスタ。 In a semiconductor substrate on which anode, base, and cathode layers are formed, a bevel groove extending from the cathode side surface to the anode layer is provided inside the outermost edge of the semiconductor substrate, and the cathode side of the substrate end surface outside the bevel groove is provided. An anode short type thyristor characterized in that an edge portion is chamfered to the extent that it is not exposed even when covered with a resin for passivation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8222188U JPH024265U (en) | 1988-06-21 | 1988-06-21 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8222188U JPH024265U (en) | 1988-06-21 | 1988-06-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH024265U true JPH024265U (en) | 1990-01-11 |
Family
ID=31306985
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8222188U Pending JPH024265U (en) | 1988-06-21 | 1988-06-21 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH024265U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002235801A (en) * | 2001-02-09 | 2002-08-23 | Tokai Rubber Ind Ltd | Assembling device for fuel battery for automobile |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4967580A (en) * | 1972-10-09 | 1974-07-01 | ||
| JPS55134969A (en) * | 1979-04-09 | 1980-10-21 | Toshiba Corp | Semiconductor device and manufacture thereof |
| JPS6387767A (en) * | 1986-10-01 | 1988-04-19 | Toshiba Corp | Compression bonded semiconductor device for electric power |
-
1988
- 1988-06-21 JP JP8222188U patent/JPH024265U/ja active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4967580A (en) * | 1972-10-09 | 1974-07-01 | ||
| JPS55134969A (en) * | 1979-04-09 | 1980-10-21 | Toshiba Corp | Semiconductor device and manufacture thereof |
| JPS6387767A (en) * | 1986-10-01 | 1988-04-19 | Toshiba Corp | Compression bonded semiconductor device for electric power |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002235801A (en) * | 2001-02-09 | 2002-08-23 | Tokai Rubber Ind Ltd | Assembling device for fuel battery for automobile |
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