JPH0241740B2 - - Google Patents
Info
- Publication number
- JPH0241740B2 JPH0241740B2 JP8929181A JP8929181A JPH0241740B2 JP H0241740 B2 JPH0241740 B2 JP H0241740B2 JP 8929181 A JP8929181 A JP 8929181A JP 8929181 A JP8929181 A JP 8929181A JP H0241740 B2 JPH0241740 B2 JP H0241740B2
- Authority
- JP
- Japan
- Prior art keywords
- resist
- pattern
- resist film
- workpiece
- pmma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 claims description 13
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 12
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 12
- 238000001312 dry etching Methods 0.000 claims description 5
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims 2
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 description 6
- 238000010894 electron beam technology Methods 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 238000010884 ion-beam technique Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 2
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8929181A JPS57204033A (en) | 1981-06-10 | 1981-06-10 | Formation of fine pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8929181A JPS57204033A (en) | 1981-06-10 | 1981-06-10 | Formation of fine pattern |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57204033A JPS57204033A (en) | 1982-12-14 |
| JPH0241740B2 true JPH0241740B2 (zh) | 1990-09-19 |
Family
ID=13966580
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8929181A Granted JPS57204033A (en) | 1981-06-10 | 1981-06-10 | Formation of fine pattern |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57204033A (zh) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5951527A (ja) * | 1982-09-17 | 1984-03-26 | Matsushita Electric Ind Co Ltd | パタ−ン形成方法 |
| JPS6027131A (ja) * | 1983-07-25 | 1985-02-12 | Rohm Co Ltd | ホトレジスト塗布方法 |
| JPS6045511U (ja) * | 1983-09-02 | 1985-03-30 | 日本電気株式会社 | 固体マイクロ波発振器 |
| US4849320A (en) * | 1986-05-10 | 1989-07-18 | Ciba-Geigy Corporation | Method of forming images |
| JP2594926B2 (ja) * | 1987-02-20 | 1997-03-26 | 株式会社日立製作所 | パタン形成法 |
| JPS6431416A (en) * | 1987-07-27 | 1989-02-01 | Nec Corp | Photoetching |
| DE4230297C1 (de) * | 1992-09-10 | 1994-03-17 | Kernforschungsz Karlsruhe | Verwendung eines Gießharzes und Verfahren zu dessen Herstellung |
-
1981
- 1981-06-10 JP JP8929181A patent/JPS57204033A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57204033A (en) | 1982-12-14 |
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