JPH0239588B2 - PURANETARIISHIKISEIMAKUSOCHINIOKERUMAKUATSUSHUSEISOCHI - Google Patents

PURANETARIISHIKISEIMAKUSOCHINIOKERUMAKUATSUSHUSEISOCHI

Info

Publication number
JPH0239588B2
JPH0239588B2 JP7514784A JP7514784A JPH0239588B2 JP H0239588 B2 JPH0239588 B2 JP H0239588B2 JP 7514784 A JP7514784 A JP 7514784A JP 7514784 A JP7514784 A JP 7514784A JP H0239588 B2 JPH0239588 B2 JP H0239588B2
Authority
JP
Japan
Prior art keywords
film thickness
thickness correction
correction plate
type film
substrate holder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP7514784A
Other languages
Japanese (ja)
Other versions
JPS60218470A (en
Inventor
Koyo Tsucha
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Priority to JP7514784A priority Critical patent/JPH0239588B2/en
Publication of JPS60218470A publication Critical patent/JPS60218470A/en
Publication of JPH0239588B2 publication Critical patent/JPH0239588B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50Substrate holders
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Description

【発明の詳細な説明】 「産業上の利用分野」 この発明は、プラネタリー式成膜装置における
膜厚修正装置に関する。
DETAILED DESCRIPTION OF THE INVENTION "Field of Industrial Application" The present invention relates to a film thickness correction device in a planetary film forming apparatus.

「従来の技術」 特開昭58−131129号の公開特許公報には、自公
転するように配置された少くとも1つの基体ホル
ダと、基体ホルダに対向してこれと共に公転する
ように配置された公転型膜厚修正板とを有するプ
ラネタリー式成膜装置が開示されている。
"Prior Art" Japanese Patent Laid-Open No. 131129/1983 describes at least one base holder arranged to rotate around its axis, and a base holder arranged to face and revolve together with the base holder. A planetary film forming apparatus having a revolution type film thickness correction plate is disclosed.

このプラネタリー式成膜装置は、自公転する基
体ホルダに定量の固定型膜厚修正板を組合わせた
プラネタリー式成膜装置の欠点を除去するために
開発されたものであつて、具体的には例えば、以
下に述べるように構成される。
This planetary type film forming apparatus was developed in order to eliminate the drawbacks of the planetary type film forming apparatus, which combines a fixed fixed film thickness correction plate with a rotating substrate holder. For example, it is configured as described below.

すなわち、前記公開特許公報に開示のプラネタ
リー式成膜装置の1実施例を表わす第7図および
第8図において、符号1は、真空蒸着装置におけ
る蒸発源或いはスパツタリング装置におけるター
ゲツトのような粒子源を示す。符号2で示される
環状部材は、粒子源1を通る垂直軸線を中心とし
て回転(公転)するように配置され、この環状部
材2には、取付腕3を介して基体ホルダ組立体4
が取付けられる。図示の実施例では、3個の基体
ホルダ組体体4がほぼ等間隔で配列されている。
各基体ホルダ組立体4は、取付腕3に固定された
回転軸受5と、回転軸受5によつて回転可能に支
持される摩擦車6と、摩擦車6に固定取付けされ
た基体ホルダ7とからなる。摩擦車6は、粒子源
1を通る垂直軸線上に中心を有する円環状の摩擦
軌条8に常に摩擦接触する。環状部材2が粒子源
1を通る垂直軸線を中心として回転(公転)する
と、これと同時に、摩擦車6は摩擦軌条8との摩
擦接触によつて転動する。従つて、摩擦車6に固
定されている基体ホルダ7は、環状部材2と共に
前記垂直軸線を中心として公転しながら、それ自
身の自転軸線を中心として自転する。基体ホルダ
7の表面(第8図で右側の面)には、粒子源1か
ら飛来する粒子を沈積させて被膜として付着させ
るべき基体(図示なし)が取付けられる。
That is, in FIGS. 7 and 8 showing one embodiment of the planetary film forming apparatus disclosed in the above-mentioned patent publication, the reference numeral 1 denotes a particle source such as an evaporation source in a vacuum evaporation apparatus or a target in a sputtering apparatus. shows. An annular member, designated 2, is arranged to rotate (revolution) about a vertical axis passing through the particle source 1, and to this annular member 2, a substrate holder assembly 4 is attached via a mounting arm 3.
is installed. In the illustrated embodiment, three substrate holder assemblies 4 are arranged at approximately equal intervals.
Each base holder assembly 4 includes a rotary bearing 5 fixed to the mounting arm 3, a friction wheel 6 rotatably supported by the rotary bearing 5, and a base holder 7 fixedly attached to the friction wheel 6. Become. The friction wheel 6 is constantly in frictional contact with an annular friction track 8 whose center is on a vertical axis passing through the particle source 1 . When the annular member 2 rotates (revolutions) about a vertical axis passing through the particle source 1, at the same time the friction wheel 6 rolls due to frictional contact with the friction track 8. Therefore, the base holder 7 fixed to the friction wheel 6 rotates around its own rotational axis while revolving together with the annular member 2 around the vertical axis. A substrate (not shown) on which the particles coming from the particle source 1 are to be deposited and adhered as a film is attached to the surface of the substrate holder 7 (the right side in FIG. 8).

かかるプラネタリー式成膜装置は、さらに、基
体ホルダ7の表面に対向して配置される公転型膜
厚修正板9を有し、これは、環状部材2(また
は、これと共に公転するけれども、自転はしない
部材、例えば取付腕3若しくは回転軸受5)に着
脱自在に取付けられた支持腕10に固定される。
よつて、環状部材2が回転(公転)するときに、
公転型膜厚修正板9はこれと共に公転する。
Such a planetary film forming apparatus further includes a revolving type film thickness correction plate 9 disposed facing the surface of the substrate holder 7, which rotates on the annular member 2 (or rotates together with the annular member 2, but does not rotate on its axis). It is fixed to a support arm 10 that is removably attached to a fixed member such as a mounting arm 3 or a rotation bearing 5).
Therefore, when the annular member 2 rotates (revolutions),
The revolution type film thickness correction plate 9 revolves together with this.

次に、第9図および第10図を参照して、公転
型膜厚修正板9の形状について説明する。第9図
は、膜厚修正なしで成膜装置を作動させたときの
平均膜厚分布を曲線Sで示し、これは一般に実験
で求められる。第9図において、Tiは基体ホルダ
7の自転中心O(基体ホルダの自転軸線が基体ホ
ルダの表面と交差する点)から半径方向に沿つて
距離Xiの位置における膜厚Tの値を示し、Tp
平均膜厚分布曲線Sにおける(基体ホルダ7の表
面内での)膜厚Tの最小値を示す。また、第10
図に示されるように、公転型膜厚修正液9の周縁
上でその原点O(基体ホルダの自転軸線が公転型
膜厚修正板の面と交差する点。一般に公転型膜厚
修正板は基体ホルダに接近配置されるので、公転
型膜厚修正板9の原点と基体ホルダ7の自転中心
とを、同一と見なし符号Oで表わす。)から等距
離Xiに位置する2つの点PiおよびQiにおいて、Pi
OとQiOのはさむ角度をθi度とする。かかる前提
のもとに、公転型膜厚修正板9の形状は、 Qi/360=Ti−Tp/Ti (1) が満されるように決定される。
Next, the shape of the revolution type film thickness correction plate 9 will be explained with reference to FIGS. 9 and 10. In FIG. 9, the average film thickness distribution when the film forming apparatus is operated without film thickness correction is shown by a curve S, which is generally determined by experiment. In FIG. 9, T i represents the value of the film thickness T at a distance X i along the radial direction from the rotation center O of the substrate holder 7 (the point where the rotation axis of the substrate holder intersects the surface of the substrate holder). , T p indicates the minimum value of the film thickness T (within the surface of the substrate holder 7) in the average film thickness distribution curve S. Also, the 10th
As shown in the figure, the origin O (the point where the axis of rotation of the substrate holder intersects the surface of the revolution-type film thickness correction plate) is located on the periphery of the revolution-type film thickness correction liquid 9. Generally, the revolution-type film thickness correction plate is Since it is placed close to the holder, two points P i and In Q i , P i
Let the angle between O and Q i O be θ i degrees. Based on this premise, the shape of the revolution type film thickness correction plate 9 is determined so that Q i /360=T i −T p /T i (1) is satisfied.

上述した式(1)を満すように公転型膜厚修正板9
の形状が定められた場合には、基体ホルダ7が公
転型膜厚修正板9に対して1回転だけ自転する際
に、基体ホルダ7の表面上でその自転中心O(こ
れは前述したように公転型膜厚修正板9の原点と
一致すると見なすことができる)からXiの点で
は、膜厚が膜厚修正なしのときの値θi/360だけ
低減することは明らかであるから、式(1)によれ
ば、膜厚修正なしのときにTiであつた膜厚TがTi
×(Ti−Tp)/Tiだけ低減してTpになる。かくし
て、基体ホルダ7の全表面に渉つて膜厚がTp
なるような膜厚修正が、公転型膜厚修正板9によ
つて達成される。
The revolution type film thickness correction plate 9 is adjusted so as to satisfy the above-mentioned formula (1).
When the shape of the substrate holder 7 is determined, when the substrate holder 7 rotates one rotation with respect to the revolution type film thickness correction plate 9, the rotation center O (this is It is clear that at the point X i , the film thickness is reduced by the value θ i /360 when no film thickness correction is performed, so the equation According to (1), the film thickness T which was T i without film thickness correction is T i
×(T i −T p )/T i is reduced to become T p . In this way, the revolution-type film thickness correction plate 9 achieves film thickness correction such that the film thickness becomes T p over the entire surface of the substrate holder 7 .

実際には、膜厚分布の指向性が大きい場合など
には、公転型膜厚修正板9が第11図に示すよう
に多くの(図示の例では3つの)ブレード9a,
9bおよび9cからなるプロペラ型に分割され
る。これらブレードは原点(基体ホルダの自転中
心)の近くの中心部11において互に連結され
る。なお、第11図に図示される公転型膜厚修正
板9において、原点を中心とする半径Xiの円に沿
つた弧長PaiQai,PbiQbiおよびPciQciの和は第10
図におけるPiQiに一致する。
In reality, when the directionality of the film thickness distribution is large, the revolving type film thickness correction plate 9 has many (three in the illustrated example) blades 9a, as shown in FIG.
It is divided into propeller types consisting of 9b and 9c. These blades are connected to each other at a central portion 11 near the origin (center of rotation of the substrate holder). In addition, in the revolution type film thickness correction plate 9 shown in FIG. 11, the sum of arc lengths P ai Q ai , P bi Q bi and P ci Q ci along a circle with radius X i centered on the origin is 10th
Corresponds to P i Q i in the figure.

「発明が解決しようとする問題点」 上述したような公転型膜厚修正板9を有する前
記公開特許公報に開示のプラネタリー式成膜装置
は、それ以前の固転型膜厚修正板を備えたものよ
りも多くの点ですぐれているけれども、基板形状
に規制が大きい。第10図に図示されたような公
転型膜厚修正板9を採用した場合には、特に基体
ホルダ7が大寸のときに、この公転型膜厚修正板
9を自転中心Oの付近まで広げるとその確実な支
持が困難になる。従つて、かかる場合には、自転
中心Oの近くでは膜厚修正が達成できない。ま
た、第11図に示されているような公転型膜厚修
正板9を採用した場合には、基体ホルダの自転中
心の近くに中心軸11が存するため、この個所で
は成膜が達成されず、膜厚がゼロになつてしま
う。
"Problems to be Solved by the Invention" The planetary film forming apparatus disclosed in the above-mentioned published patent application, which has the above-mentioned revolving type film thickness correcting plate 9, is different from the previous one having the fixed rotating type film thickness correcting plate. Although it is superior in many respects to the previous version, there are significant restrictions on the board shape. When the revolution type film thickness correction plate 9 as shown in FIG. This makes it difficult to secure support. Therefore, in such a case, film thickness correction cannot be achieved near the rotation center O. Furthermore, when a revolution type film thickness correction plate 9 as shown in FIG. 11 is adopted, since the central axis 11 is located near the center of rotation of the substrate holder, film formation is not achieved at this location. , the film thickness becomes zero.

よつて、この発明は、前記公開特許公報に開示
のプラネタリー式成膜装置の上述したような欠点
すなわち問題点を除去することを目的とする。
Therefore, it is an object of the present invention to eliminate the above-mentioned drawbacks or problems of the planetary film forming apparatus disclosed in the above-mentioned published patent application.

「問題点を解決するための手段」 上述した欠点を除去するため、すなわち問題点
を解決するため、この発明によれば、基体ホルダ
の自転中心の近くまで達しない公転型膜厚修正板
が使用され、さらに固定型膜厚修正板が前記自転
中心の公転軌道の近くに定置される。
"Means for Solving the Problems" In order to eliminate the above-mentioned drawbacks, that is, to solve the problems, according to the present invention, a revolution type film thickness correction plate that does not reach close to the center of rotation of the substrate holder is used. Further, a fixed film thickness correction plate is placed near the orbit of the rotation center.

「作用」 この発明によれば、基体ホルダの自転中心から
離れているところでは、公転型膜厚修正板によつ
て前記公開特許公報に開示のものと同様にして膜
厚修正が達成され、また基体ホルダの自転中心の
近くでは、基体ホルダの自転による効果が実際上
無視できるから、自転中心の公転軌道の近くに固
定型膜厚修正板を定置させるだけで、充分な膜厚
修正が達成できる。かくして、公転型膜厚修正板
を自転中心まで広げることなしに、大寸の基体ホ
ルダであつても実質上その全表面に渉つて膜厚を
修正された成膜が遂行できる。
"Operation" According to the present invention, at a location away from the center of rotation of the substrate holder, the film thickness correction is achieved by the revolution type film thickness correction plate in the same manner as that disclosed in the above-mentioned Japanese Patent Publication No. Near the center of rotation of the substrate holder, the effect of the rotation of the substrate holder can be practically ignored, so sufficient thickness correction can be achieved by simply placing a fixed film thickness correction plate near the orbit of the center of rotation. . In this way, film formation with corrected film thickness can be performed over substantially the entire surface of a large substrate holder without expanding the revolution type film thickness correction plate to the center of rotation.

「実施例」 以下において、第1図から第6図を参照したが
ら、この発明の実施例について説明する。
Embodiments In the following, embodiments of the present invention will be described with reference to FIGS. 1 to 6.

この発明の実施例は、公転型膜厚修正板の形状
が第7図から第11図を参照して前述した従来の
ものと異なつているという点並びにこの従来のも
のには包含されていなかつた固定型膜厚修正板が
包含されているという点を除き、第7図から第1
1図に図示の前記公開特許公報に開示されたプラ
ネタリー式成膜装置と同一に構成できるので、こ
の同一に構成できる点については「従来の技術」
見出しのもとに説明した事項をそのまま援用し、
ここでは説明を省略しまたは簡略にする。
The embodiment of the present invention differs from the conventional one described above with reference to FIGS. 7 to 11 in the shape of the revolution type film thickness correction plate, and also has features that are not included in the conventional one. 7 to 1 except that a fixed film thickness correction plate is included.
Since it can be configured the same as the planetary type film forming apparatus disclosed in the above-mentioned published patent application shown in FIG.
The matters explained under the headings are used as is,
The explanation will be omitted or simplified here.

この発明によれば、第1図および第2図に示す
ように、環状部材2(または、これと共に公転す
るけれども自転はしない部材、例えば取付腕3若
しくは回転軸受5)に着脱自在に取付けられた支
持腕10に固定されかつ基体ホルダ7の表面に対
向するように配置される公転型膜厚修正板9は、
基体ホルダ7の自転中心の近くまで達しないよう
な形状を有する。換言すれば、自転中心の近くで
切り欠かれている。この発明による膜厚修正装置
は、公転型膜厚修正板9以外に固定型膜厚修正板
12を有し、これは基体ホルダ7の自転中心の公
転軌道13の近くに位置し、例えば成膜装置のケ
ーシング(図示なし)などに支持部材14によつ
て取付けられて定置される。
According to the present invention, as shown in FIGS. 1 and 2, the annular member 2 is removably attached to the annular member 2 (or a member that revolves together with the annular member but does not rotate, such as the mounting arm 3 or the rotary bearing 5). The revolution type film thickness correction plate 9 fixed to the support arm 10 and arranged to face the surface of the substrate holder 7 is
It has a shape that does not reach close to the center of rotation of the base holder 7. In other words, it is cut out near the center of rotation. The film thickness correction device according to the present invention has a fixed film thickness correction plate 12 in addition to the revolution type film thickness correction plate 9, which is located near the orbit 13 of the rotation center of the substrate holder 7, and is, for example, The support member 14 is attached to a casing (not shown) of the device or the like and the support member 14 is fixed therein.

公転型膜厚修正板9は、第3図に示すように、
第10図図示の形状において基体ホルダ7の自転
中心(この公転型膜厚修正板の原点)Oを中心と
する直径φの円の部分を切欠いた形状を有する。
このような公転型膜厚修正板によれば、第3図に
示すように、膜厚修正なしのときに曲線S(第9
図をも参照)で示されるような膜厚分布であつた
ものが、x>φ/2(xは自転中心Oからの距離)
では式(1)に関連して説明したような修正を受けて
一定の膜厚Tpになり、x<φ/2では全く修正
されずに膜厚分布Sのままで残り、かくして第4
図にRで示されるような膜厚分布が得られる。
As shown in FIG. 3, the revolution type film thickness correction plate 9
In the shape shown in FIG. 10, it has a shape in which a circular portion with a diameter φ centered on the rotation center O of the substrate holder 7 (the origin of this revolution type film thickness correction plate) is cut out.
According to such a revolution type film thickness correction plate, as shown in FIG.
The film thickness distribution as shown in the figure (see also the figure) is
Then, the film thickness becomes constant T p after being modified as explained in relation to equation (1), and when x < φ/2, the film thickness distribution S remains unchanged without being modified at all, and thus the fourth
A film thickness distribution as shown by R in the figure is obtained.

固定型膜厚修正板12は、公転型膜厚修正板9
では修正されなかつたx<φ/2の部分の修正を
なすためのものであつて、その際に注目すべき点
は、固定型膜厚修正板12で修正すべき中域x<
φ/2が自転中心Oの近くに限定され、従つて自
転による膜厚への影響が無視でき、故に公転する
公転型膜厚修正板9の代りに定置の膜厚修正板1
2を採用しても修正効果に実質上変化が見られな
いということにある。
The fixed type film thickness correction plate 12 is the revolving type film thickness correction plate 9
This is to correct the portion of x<φ/2 that was not corrected, and the point to note at this time is that the mid-range x<φ/2 to be corrected with the fixed film thickness correction plate 12.
φ/2 is limited near the center of rotation O, and therefore the influence of rotation on the film thickness can be ignored. Therefore, the fixed film thickness correction plate 1 is used instead of the revolving type film thickness correction plate 9.
Even if 2 is adopted, there is virtually no change in the correction effect.

固定型膜厚修正板12は、一般に長方形の形状
を有し、x<φ/2の区域を修正できるようにす
るため、第2図に示されるように、前述した切り
欠き円の直径φに等しい高さを有し、公転軌道1
3の上方φ/2から下方φ/2まで上下に広がる
ように配置される。固定型膜厚修正板12は、さ
らに、通常は公転軌道に沿つてわん曲配置され、
その長さをl、これを公転軌道13の中心Pから
見た角度をθ〓度、公転軌道13の半径をrとした
ときに、l従つてθ〓は次の式(2)を満すように選択
される。
The fixed film thickness correction plate 12 generally has a rectangular shape, and in order to be able to correct the area where x<φ/2, as shown in FIG. have the same height and orbit 1
They are arranged so as to extend vertically from φ/2 above φ/2 to φ/2 below. The fixed film thickness correction plate 12 is further generally arranged in a curved manner along the orbit of revolution,
When its length is l, its angle from the center P of the orbit 13 is θ degrees, and the radius of the orbit 13 is r, then l therefore θ satisfies the following equation (2). selected as follows.

l/2πr=θ〓/360=T′i−Tp/T′i (2) ただし、T′iは、第4図に示されるように、X′i
がOとφ/2の間のときS曲線上での膜厚Tの任
意の値をそれぞれ表わす。このようにすれば、基
体ホルダ7が公転軌道に沿つて1公転する間にx
<φ/2の範囲で膜厚が修正なしのときの値の
θ〓/360に低減することは明らかであるから、修
正なしのときにほぼT′iであつた膜厚が固定膜厚
修正板12によつて低減して実質上Tpになるこ
とが判る。
l/2πr=θ〓/360=T′ i −T p /T′ i (2) However, T′ i is X′ i as shown in FIG.
When is between O and φ/2, each represents an arbitrary value of the film thickness T on the S curve. In this way, while the base holder 7 makes one revolution along the orbit, x
It is clear that in the range <φ/2, the film thickness is reduced to θ〓/360, which is the value without correction, so the film thickness, which was approximately T′ i without correction, is fixed film thickness correction. It can be seen that the plate 12 reduces it to substantially T p .

別の実施例として、次のようなものも考えられ
る。前記公開特許公報で開示されたものについて
前述した、第10図の公転型膜厚修正板9を第1
1図に図示のようないくつかのブレードに分割し
た例と同様にして、第3図図示のこの発明による
公転型膜厚修正板9も、第3図に示されるような
いくつかの花びら型またはプロペラ型のブレード
9a,9bおよび9cに分割できる。ただし、こ
の場合には直径φの円の部分が切り欠かれている
から、実際には、各ブレード9a,9bおよび9
cが例えば第6図に示されるように細い連結部材
15a,15bによつて互に連結される。
As another example, the following may also be considered. The revolution type film thickness correction plate 9 shown in FIG.
Similar to the example in which the blades are divided into several blades as shown in FIG. 1, the revolution type film thickness correction plate 9 according to the present invention shown in FIG. Alternatively, it can be divided into propeller-type blades 9a, 9b, and 9c. However, in this case, since the circular part with diameter φ is cut out, in reality, each blade 9a, 9b and 9
c are connected to each other by thin connecting members 15a and 15b, as shown in FIG. 6, for example.

「発明の効果」 かくして、上述したような公転型膜厚修正板9
および固定型膜厚修正板12を併用すれば、xが
φ/2より大の区域でもこれより小の区域でも膜
厚が実質上Tpになるような膜厚修正が達成でき
る。
"Effect of the invention" Thus, the above-mentioned revolution type film thickness correction plate 9
By using the fixed type film thickness correction plate 12 in combination, film thickness correction can be achieved such that the film thickness becomes substantially T p both in areas where x is larger than φ/2 and in areas where x is smaller than φ/2.

【図面の簡単な説明】[Brief explanation of drawings]

第1図はこの発明によるプラネタリー式成膜装
置における膜厚修正装置の実施例を一部断面で部
分的に表わす図、第2図は第1図に示される要素
を簡略に示す図、第3図はこの発明の実施例にお
ける公転型膜厚修正板の1例を示す図、第4図は
第3図の公転型膜厚修正板を使用したときの膜厚
分布を示す図、第5図は第3図の変型を示す図、
第6図は第5図の公転型膜厚修正板の実際の形を
示す図、第7図は従来のプラネタリー式成膜装置
の概略を示す斜視図、第8図は第7図の1部を拡
大して示す断面図、第9図は膜厚修正なしの平均
膜厚分布を示す図、第10図および第11図は従
来の装置における公転型膜厚修正板の例をそれぞ
れ示す図である。 図面において、7は基体ホルダ、9は公転型膜
厚修正板、12は固定型膜厚修正板、13は自転
中心の公転軌道、Oは自転中心を示す。
1 is a partial cross-sectional view of an embodiment of the film thickness correction device in a planetary film forming apparatus according to the present invention; FIG. 2 is a diagram simply showing the elements shown in FIG. 1; 3 is a diagram showing an example of the revolution type film thickness correction plate in the embodiment of the present invention, FIG. 4 is a diagram showing the film thickness distribution when the revolution type film thickness correction plate of FIG. 3 is used, and FIG. The figure shows a modification of Figure 3.
FIG. 6 is a diagram showing the actual shape of the revolution type film thickness correction plate shown in FIG. 5, FIG. FIG. 9 is a diagram showing the average film thickness distribution without film thickness correction, and FIGS. 10 and 11 are views each showing an example of a revolution type film thickness correction plate in a conventional device. It is. In the drawings, 7 is a base holder, 9 is a revolving film thickness correction plate, 12 is a fixed film thickness correction plate, 13 is an orbit around the center of rotation, and O is the center of rotation.

Claims (1)

【特許請求の範囲】[Claims] 1 自公転するように配置された少くとも1つの
基体ホルダと、基体ホルダに対向してこれと共に
公転するように配置された公転型膜厚修正板とを
有するプラネタリー式成膜装置において、基体ホ
ルダの自転中心の近くまで達しない公転型膜厚修
正板を使用し、前記自転中心の公転軌道の近くに
固定型膜厚修正板を定置させたことを特徴とする
膜厚修正装置。
1. In a planetary film forming apparatus having at least one substrate holder arranged to revolve around its own axis and a revolution type film thickness correction plate arranged to face the substrate holder and revolve together with the substrate holder, the substrate A film thickness correction device characterized in that a revolving type film thickness correction plate that does not reach close to the rotation center of the holder is used, and a fixed type film thickness correction plate is fixed near the orbit of the rotation center.
JP7514784A 1984-04-16 1984-04-16 PURANETARIISHIKISEIMAKUSOCHINIOKERUMAKUATSUSHUSEISOCHI Expired - Lifetime JPH0239588B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7514784A JPH0239588B2 (en) 1984-04-16 1984-04-16 PURANETARIISHIKISEIMAKUSOCHINIOKERUMAKUATSUSHUSEISOCHI

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7514784A JPH0239588B2 (en) 1984-04-16 1984-04-16 PURANETARIISHIKISEIMAKUSOCHINIOKERUMAKUATSUSHUSEISOCHI

Publications (2)

Publication Number Publication Date
JPS60218470A JPS60218470A (en) 1985-11-01
JPH0239588B2 true JPH0239588B2 (en) 1990-09-06

Family

ID=13567797

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7514784A Expired - Lifetime JPH0239588B2 (en) 1984-04-16 1984-04-16 PURANETARIISHIKISEIMAKUSOCHINIOKERUMAKUATSUSHUSEISOCHI

Country Status (1)

Country Link
JP (1) JPH0239588B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2783001B1 (en) * 1998-09-04 2000-11-24 Essilor Int PROCESS FOR THE VACUUM PROCESSING OF ANY CURVED SUBSTRATE, ESPECIALLY A GLASSES GLASS, AND A COVER FOR THE IMPLEMENTATION OF SUCH A PROCESS

Also Published As

Publication number Publication date
JPS60218470A (en) 1985-11-01

Similar Documents

Publication Publication Date Title
KR850005306A (en) Grinding method of semiconductor wafer surface and apparatus therefor
JPH036990B2 (en)
JPH09173946A (en) Spin coating device
JPH0239588B2 (en) PURANETARIISHIKISEIMAKUSOCHINIOKERUMAKUATSUSHUSEISOCHI
JPS6289864A (en) Magnetron sputtering device
JP3458450B2 (en) Sputtering method
JP2000265261A (en) Vacuum deposition device
JPH01184277A (en) Substrate rotating device
JP3412849B2 (en) Thin film deposition equipment
JPH11254303A (en) Lapping machine
JPS626640B2 (en)
US4241698A (en) Vacuum evaporation system for the deposition of a thin evaporated layer having a high degree of uniformity
JP2752409B2 (en) Vacuum deposition equipment
JP2825918B2 (en) Vacuum deposition equipment
JP2001207262A (en) Vacuum coating system for applying coating on optical substrate
JPH0343233Y2 (en)
JPH0226935Y2 (en)
JPH0765159B2 (en) Vacuum deposition equipment
JPS6352109B2 (en)
JPH0526755Y2 (en)
US6038798A (en) Internal rotary structure of a crystal ball seat
JPH079445Y2 (en) Polarization angle adjustment mechanism for communication equipment
JPH0465464B2 (en)
JP2001014664A (en) Magnetic recording medium and manufacture of the same
JPH02205670A (en) Sputtering device

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term