JPH0237746B2 - - Google Patents

Info

Publication number
JPH0237746B2
JPH0237746B2 JP56145273A JP14527381A JPH0237746B2 JP H0237746 B2 JPH0237746 B2 JP H0237746B2 JP 56145273 A JP56145273 A JP 56145273A JP 14527381 A JP14527381 A JP 14527381A JP H0237746 B2 JPH0237746 B2 JP H0237746B2
Authority
JP
Japan
Prior art keywords
state imaging
solid
conductor
electrode
imaging device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56145273A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5846773A (ja
Inventor
Nozomi Harada
Okio Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP56145273A priority Critical patent/JPS5846773A/ja
Publication of JPS5846773A publication Critical patent/JPS5846773A/ja
Publication of JPH0237746B2 publication Critical patent/JPH0237746B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H10F39/194—Photoconductor image sensors having arrangements for blooming suppression

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Color Television Image Signal Generators (AREA)
JP56145273A 1981-09-14 1981-09-14 固体撮像装置 Granted JPS5846773A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56145273A JPS5846773A (ja) 1981-09-14 1981-09-14 固体撮像装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56145273A JPS5846773A (ja) 1981-09-14 1981-09-14 固体撮像装置

Publications (2)

Publication Number Publication Date
JPS5846773A JPS5846773A (ja) 1983-03-18
JPH0237746B2 true JPH0237746B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1990-08-27

Family

ID=15381317

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56145273A Granted JPS5846773A (ja) 1981-09-14 1981-09-14 固体撮像装置

Country Status (1)

Country Link
JP (1) JPS5846773A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3570806D1 (en) * 1984-12-24 1989-07-06 Toshiba Kk Solid state image sensor
JPS6218755A (ja) * 1985-07-18 1987-01-27 Toshiba Corp 固体撮像装置
JP6576025B2 (ja) * 2014-09-29 2019-09-18 キヤノン株式会社 光電変換装置、及び撮像システム

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55104176A (en) * 1979-02-06 1980-08-09 Matsushita Electric Ind Co Ltd Solidstate pick up unit
JPS57211770A (en) * 1981-06-24 1982-12-25 Hitachi Ltd Solid state image pickup device

Also Published As

Publication number Publication date
JPS5846773A (ja) 1983-03-18

Similar Documents

Publication Publication Date Title
US4200892A (en) Solid state image sensor
JP3476506B2 (ja) Ｃｃｄ映像センサ及びその製造方法
CA1169529A (en) Solid state imaging apparatus
JPH056353B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP2858179B2 (ja) Ｃｃｄ映像素子
EP0453530B1 (en) Solid-state image sensor
US4623909A (en) Semiconductor photodetector
JPH0237746B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP3284986B2 (ja) 光電変換素子およびそれを用いた固体撮像装置
KR960001182B1 (ko) 고체 촬상 소자
US4463367A (en) Frame-transfer charge-coupled image sensor device having channel sounding regions below light-admitting windows
JP2000022119A (ja) 固体撮像デバイス及びその製造方法
JPH0449787B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
US5005062A (en) Image sensor device of the frame transfer type
JPS5954146A (ja) 撮像装置
US5155362A (en) Infra-red radiation imaging device arrangements
JPS5866471A (ja) 固体撮像素子
JPH01295458A (ja) 積層型固体撮像装置
JPS63164270A (ja) 積層型固体撮像装置
JPH0437166A (ja) 固体撮像素子
KR840001604B1 (ko) 고체촬상소자의 제조방법
JPH0220036B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR900001220Y1 (ko) 고체 촬상 소자
JPS60245166A (ja) 固体撮像装置
GB2248341A (en) Infra-red radiation imaging device arrangements