JPH0237633B2 - - Google Patents

Info

Publication number
JPH0237633B2
JPH0237633B2 JP57166310A JP16631082A JPH0237633B2 JP H0237633 B2 JPH0237633 B2 JP H0237633B2 JP 57166310 A JP57166310 A JP 57166310A JP 16631082 A JP16631082 A JP 16631082A JP H0237633 B2 JPH0237633 B2 JP H0237633B2
Authority
JP
Japan
Prior art keywords
word line
transistor
potential
switching circuit
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57166310A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5956285A (ja
Inventor
Satoshi Konishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP57166310A priority Critical patent/JPS5956285A/ja
Publication of JPS5956285A publication Critical patent/JPS5956285A/ja
Publication of JPH0237633B2 publication Critical patent/JPH0237633B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
JP57166310A 1982-09-24 1982-09-24 半導体記憶装置 Granted JPS5956285A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57166310A JPS5956285A (ja) 1982-09-24 1982-09-24 半導体記憶装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57166310A JPS5956285A (ja) 1982-09-24 1982-09-24 半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS5956285A JPS5956285A (ja) 1984-03-31
JPH0237633B2 true JPH0237633B2 (enrdf_load_stackoverflow) 1990-08-27

Family

ID=15828968

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57166310A Granted JPS5956285A (ja) 1982-09-24 1982-09-24 半導体記憶装置

Country Status (1)

Country Link
JP (1) JPS5956285A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5255224A (en) * 1991-12-18 1993-10-19 International Business Machines Corporation Boosted drive system for master/local word line memory architecture
KR100380160B1 (ko) * 2000-12-29 2003-04-11 주식회사 하이닉스반도체 워드 라인 부트스트랩 회로
JP2011044186A (ja) * 2009-08-19 2011-03-03 Oki Semiconductor Co Ltd ワード線駆動装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS566099U (enrdf_load_stackoverflow) * 1979-06-25 1981-01-20

Also Published As

Publication number Publication date
JPS5956285A (ja) 1984-03-31

Similar Documents

Publication Publication Date Title
US4161040A (en) Data-in amplifier for an MISFET memory device having a clamped output except during the write operation
US4150441A (en) Clocked static memory
EP0398245B1 (en) Dynamic type random-access memory
JP2016511501A (ja) 高められた速度を有する書込みアシスト付きメモリ
KR100574181B1 (ko) 고속기입회복을갖춘메모리장치및그에관련된기입회복방법
JPH0612632B2 (ja) メモリ回路
EP0017228B1 (en) Memory device
US4110840A (en) Sense line charging system for random access memory
JPS6214520A (ja) メモリの出力バツフア回路
US4338679A (en) Row driver circuit for semiconductor memory
EP0085436B1 (en) Buffer circuits
WO1981001482A1 (en) Quiet row select circuitry
US5644548A (en) Dynamic random access memory having bipolar and C-MOS transistor
EP0083229B1 (en) Semiconductor memory device
US4554469A (en) Static bootstrap semiconductor drive circuit
US4635234A (en) Memory circuit with an improved output control circuit
JPH0522316B2 (enrdf_load_stackoverflow)
JPH0237633B2 (enrdf_load_stackoverflow)
JPH0883489A (ja) メモリ・アレイ集積回路
JPH0660665A (ja) 半導体スタティックｒａｍのビット線負荷回路
JPH0294096A (ja) 半導体記憶回路
JPH023161A (ja) メモリ回路
JPS6299975A (ja) 半導体記憶回路
JP2986939B2 (ja) ダイナミックｒａｍ
JP2605867B2 (ja) 半導体メモリ回路