JPH0236893B2 - - Google Patents

Info

Publication number
JPH0236893B2
JPH0236893B2 JP58009662A JP966283A JPH0236893B2 JP H0236893 B2 JPH0236893 B2 JP H0236893B2 JP 58009662 A JP58009662 A JP 58009662A JP 966283 A JP966283 A JP 966283A JP H0236893 B2 JPH0236893 B2 JP H0236893B2
Authority
JP
Japan
Prior art keywords
light
degrees
subject
photoelectric conversion
parallel light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58009662A
Other languages
Japanese (ja)
Other versions
JPS59135353A (en
Inventor
Yukihiro Goto
Nobushi Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP966283A priority Critical patent/JPS59135353A/en
Priority to US06/534,119 priority patent/US4601577A/en
Publication of JPS59135353A publication Critical patent/JPS59135353A/en
Publication of JPH0236893B2 publication Critical patent/JPH0236893B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956Inspecting patterns on the surface of objects

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明は、例えば半導体ペレツトのように互い
に直交する各凹凸パターンが形成されている面の
傷を検出する表面傷検出装置に関する。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a surface flaw detection device for detecting flaws on a surface, such as a semiconductor pellet, on which uneven patterns that are perpendicular to each other are formed.

〔発明の技術的背景とその問題点〕[Technical background of the invention and its problems]

従来、この種の装置として、例えば半導体ウエ
ア上に形成された隣接する2チツプについて、同
一場所を比較してその差から傷を検出する方法を
適用したものがある。このような装置は、ウエハ
をチツプ毎に分離する以前であれば、各チツプ
(ペレツト)の相互位置が正確に決まつているの
で、簡単な位置決めをするだけで高精度の傷検出
を行なうことができる。
Conventionally, as a device of this kind, there is a method in which, for example, two adjacent chips formed on a semiconductor wafer are compared at the same location and flaws are detected from the difference. With this kind of equipment, the mutual position of each chip (pellet) is accurately determined before the wafer is separated into chips, so it is possible to perform highly accurate flaw detection with simple positioning. Can be done.

しかしながら、このようにウエハ分離前では、
ダイシングによる分離や分離後の各チツプ摘出等
の際に生じる傷を検出することができない。この
ため、分離後に傷検査を行なわなければならない
が、前記従来の装置にあつては、チツプ相互の位
置合わせを正確に行なわなければ精度の良い傷検
出を行なうことができないため、位置合わせが複
雑となつて傷検出に多くの時間と手間を要し、生
産性が極めて悪かつた。
However, before wafer separation,
It is not possible to detect scratches that occur during separation by dicing or when each chip is extracted after separation. For this reason, flaw inspection must be performed after separation, but with the conventional device described above, accurate flaw detection cannot be performed unless the chips are aligned accurately with each other, so alignment is complicated. Therefore, it took a lot of time and effort to detect flaws, and productivity was extremely low.

〔発明の目的〕[Purpose of the invention]

本発明は、個々に切り離された状態の被検体で
あつても、表面傷を簡単かつ的確に高速度で検出
し得るようにした表面傷検出装置を提供すること
を目的とする。
SUMMARY OF THE INVENTION An object of the present invention is to provide a surface flaw detection device that can detect surface flaws easily, accurately, and at high speed even in individually separated specimens.

〔発明の概要〕[Summary of the invention]

本発明は、上記目的を達成するために各凹凸パ
ターンに対してそれぞれ45゜の方向でかつ被検体
表面に対して20〜30゜の照射角をもつてそれぞれ
配置された各光伝導体により平行光を被検体表面
に照射し、この照射による傷からの散乱光を被検
体表面の垂直上方に配置した光電変換部で受光
し、それにより得られる画像信号をレベル判定等
することにより表面傷情報を求めるようにしたも
のである。
In order to achieve the above-mentioned object, the present invention provides parallel light beams by each photoconductor arranged at a direction of 45 degrees with respect to each concavo-convex pattern and with an irradiation angle of 20 to 30 degrees with respect to the surface of the subject. Light is irradiated onto the surface of the specimen, and the scattered light from the scratches caused by this irradiation is received by a photoelectric converter placed vertically above the surface of the specimen, and the resulting image signal is subjected to level judgment, etc. to obtain surface scratch information. It was designed to ask for.

〔発明の実施例〕[Embodiments of the invention]

第1図は、本発明の一実施例における表面傷検
出装置の概略構成図である。この装置は、光源1
の出力光をレンズ系2により擬似平行光としたの
ち、この擬似平行光をそれぞれグラスフアイバ等
からなる4本の光伝導体3a,〜,3dで伝送し
て被検体としての半導体ペレツト4の表面に照射
している。
FIG. 1 is a schematic diagram of a surface flaw detection device according to an embodiment of the present invention. This device has a light source 1
The output light is converted into pseudo-parallel light by a lens system 2, and then transmitted through four photoconductors 3a, -, 3d each made of a glass fiber or the like, to the surface of a semiconductor pellet 4 as an object to be inspected. is irradiated.

ところで、上記4本の各光伝導体3a,〜,3
dの光出力端部は、第2図aに示す如くそれぞれ
半導体ペレツト4に形成されているパターンの方
向X、Yに対して光軸が45゜ずれるように配置さ
れており、かつ照射角が第2図bに示す如く半導
体ペレツト4のパターン形成面(表面)4aに対
して20〜30゜の角度となるように設定されている。
なお、第1図では図示の便宜上2本の光伝導体3
a,3bのみを示している。
By the way, each of the four photoconductors 3a, -, 3
The light output end portions d are arranged so that the optical axis is shifted by 45 degrees with respect to the directions X and Y of the pattern formed on the semiconductor pellet 4, respectively, as shown in FIG. 2a, and the irradiation angle is As shown in FIG. 2b, it is set at an angle of 20 to 30 degrees with respect to the pattern forming surface (front surface) 4a of the semiconductor pellet 4.
In addition, in FIG. 1, two photoconductors 3 are shown for convenience of illustration.
Only a and 3b are shown.

また本装置は、上記各光伝導体3a,〜,3d
により照明された半導体ペレツト4の表面の反射
光学像を対物レンズ系5および接眼レンズ系6を
介して工業用テレビジヨン(ITV)カメラ7で
撮像し、その撮像画像信号を2値化回路8を介し
て信号処理回路9に導びいている。ここで、上記
2値化回路8は、撮像画像信号を所定のレベルで
2値化することにより、微弱なノイズ成分等を除
去するものである。また信号処理回路9は、例え
ばコンピユータを備えたもので、上記2値化出力
を画素化したのち画素毎にレベル判定する等して
傷の有無を検出し、有る場合には傷の位置や大き
さ等の情報を求めている。
In addition, this device includes each of the photoconductors 3a, -, 3d.
The reflected optical image of the surface of the semiconductor pellet 4 illuminated by It is led to the signal processing circuit 9 via the signal processing circuit 9. Here, the binarization circuit 8 removes weak noise components by binarizing the captured image signal at a predetermined level. The signal processing circuit 9 is equipped with a computer, for example, and detects the presence or absence of scratches by pixelizing the binarized output and determining the level for each pixel. I'm looking for information on Sato.

このような構成であるから、半導体ペレツト4
の表面4aは、4本の光伝導体3a,〜,3bに
より、それぞれ20〜30゜の照射角をもつて4方か
ら同時に照明される。したがつて、半導体ペレツ
ト4に例えば第3図に示す如きパターンが形成さ
れ、かつ傷○イがある場合には、パターンに対して
45゜の角度をもつて照明しているため、規則性の
あるパターンによる垂直上方への散乱光は生じ
ず、また生じたとしても微弱となり、結果的に傷
○イによる散乱光だけがITVカメラ7で受光され
ることになる。またこのとき傷○イによる散乱光
は、4方から同時に照明を行なつているので、1
方のみの場合や2方の場合に比べて高強度のもの
となり、また傷の形状に関係なく確実に発生され
る。
With such a configuration, the semiconductor pellet 4
The surface 4a is simultaneously illuminated from four directions by four photoconductors 3a, . Therefore, if a pattern as shown in FIG. 3 is formed on the semiconductor pellet 4 and there are scratches, the pattern may be damaged.
Since the light is illuminated at a 45° angle, vertical upward scattering of light due to regular patterns does not occur, and even if it does occur, it will be weak, and as a result, only the scattered light from the scratches will be visible to the ITV camera. The light will be received at 7. Also, at this time, the scattered light due to the scratch ○I is illuminated from four directions simultaneously, so
The strength is higher than that in the case of only one side or the case of two sides, and the scratches are reliably generated regardless of the shape of the scratch.

さらに、半導体ペレツト4の表面に対しそれぞ
れ20〜30゜の照射角を有して照明しているので、
例えば50〜60゜に設定した場合に比べて表面4a
のわずかな凸凹やペレツトの傾きによる反射光は
著しく少なくなり、また20゜以下に設定した場合
のように深い傷のエツジ部分が光るだけで散乱光
が検出されないといつた不具合は生じない。
Furthermore, since the surface of the semiconductor pellet 4 is illuminated at an irradiation angle of 20 to 30 degrees,
For example, compared to the case where it is set at 50 to 60 degrees,
The amount of reflected light due to the slight unevenness of the surface or the inclination of the pellet is significantly reduced, and the problem that occurs when the angle is set to 20 degrees or less, where only the edges of deep scratches shine and scattered light is not detected, does not occur.

したがつて、ITVカメラ7では半導体ペレツ
ト4表面の傷○イのみが例えば第4図に示す如く受
光される。そして、このITVカメラ7で得られ
た撮像画像信号は、2値化回路8でさらにノイズ
成分が消去されたのち、信号処理回路9で信号処
理され、この結果上記傷○イの存在が検出されてさ
らにはその位置、大きさ、形状等の情報が識別さ
れて図示しない表示装置等に表示される。
Therefore, the ITV camera 7 receives light from only the scratches on the surface of the semiconductor pellet 4, as shown in FIG. 4, for example. The captured image signal obtained by this ITV camera 7 is further removed from noise components by a binarization circuit 8, and then subjected to signal processing by a signal processing circuit 9. As a result, the presence of the scratch ○a is detected. Furthermore, information such as its position, size, shape, etc. is identified and displayed on a display device (not shown) or the like.

このように、本実施例であれば、半導体ペレツ
ト4の表面に対し、パターンの方向に対して45゜
ずれた方向からそれぞれ20〜30゜の照射角を有し
て4本の平行光を照明するようにしているので、
傷に対して極めてS/Nの高い検出を行なうこと
ができ、しかも従来のような精密な位置決めは不
要となる。したがつて、個々に切り離された半導
体ペレツトに対しても、簡単かつ精度良く、しか
も高速度で傷検出を行なうことができる。また本
実施例であれば、照明光学系をグラスフアイバ等
の光伝導体により構成しているので、照明部の先
端部分を小形化することができる。この効果は、
本実施例のように4方向から照明を行ない、しか
も半導体ペレツトの表面に対して20〜30゜という
ように照明部の先端が近接配置される場合にあつ
て、極めて有効である。
As described above, in this embodiment, the surface of the semiconductor pellet 4 is illuminated with four parallel beams at an irradiation angle of 20 to 30 degrees from a direction shifted by 45 degrees with respect to the direction of the pattern. I try to do this, so
It is possible to detect flaws with an extremely high S/N ratio, and there is no need for precise positioning as in the conventional method. Therefore, flaw detection can be performed easily, accurately, and at high speed even on individually separated semiconductor pellets. Further, in this embodiment, since the illumination optical system is constructed of a photoconductor such as a glass fiber, the tip portion of the illumination section can be made smaller. This effect is
This is extremely effective when illumination is performed from four directions as in this embodiment, and when the tip of the illumination part is placed close to the surface of the semiconductor pellet at an angle of 20 to 30 degrees.

〔発明の効果〕〔Effect of the invention〕

以上詳述したように本発明によれば、各凹凸パ
ターンに対してそれぞれ45゜の方向でかつ被検体
表面に対して20〜30゜の照射角度をもつて4本の
各光伝導体により平行光を照射し、この照射によ
り生じる散乱光を被検体表面の垂直上方に配置し
た光電変換部で受光し、それにより得られた画像
信号をレベル判定等して表面傷情報を求めるよう
にしたものである。
As described in detail above, according to the present invention, each of the four photoconductors is parallel to each other in a direction of 45 degrees with respect to each uneven pattern and with an irradiation angle of 20 to 30 degrees with respect to the surface of the subject. Light is irradiated, the scattered light generated by this irradiation is received by a photoelectric conversion unit placed vertically above the surface of the object to be inspected, and the resulting image signal is subjected to level judgment etc. to obtain surface flaw information. It is.

従つて、本発明によれば、傷により生じる散乱
光の強度を傷の形状に関係なく高くでき、かつ被
検体表面の僅かな凹凸や傾きによる反射光が少
く、そのうえ深い傷のエツジ部分のみが光るだけ
で散乱光が検出されないということはなく、個々
に分離された状態の被検体であつても表面傷を簡
単かつ的確に高速度で検出できる表面傷検出装置
を提供できる。
Therefore, according to the present invention, the intensity of scattered light caused by scratches can be increased regardless of the shape of the scratch, and the amount of light reflected from slight irregularities or inclinations on the surface of the object to be examined can be reduced, and moreover, only the edges of deep scratches can be detected. It is possible to provide a surface flaw detection device that can simply and accurately detect surface flaws at high speed even in individually separated objects without detecting scattered light.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例における表面傷検出
装置の概略構成図、第2図a,bは第1図に示し
た装置の要部構成を示す平面図および側面図、第
3図および第4図は第1図に示した装置の作用説
明に用いるためのもので、第3図は被検体表面の
一構成例を示す斜視図、第4図は光電変換部で受
光される光学像の一例を示す図である。 3a,〜,3d…光伝導体、4…半導体ペレツ
ト、5…対物光学系、6…接眼光学系、7…
ITVカメラ、8…2値化回路、9…信号処理回
路、○イ…傷。
FIG. 1 is a schematic configuration diagram of a surface flaw detection device according to an embodiment of the present invention, FIGS. Fig. 4 is used to explain the operation of the apparatus shown in Fig. 1, Fig. 3 is a perspective view showing an example of the structure of the surface of the subject, and Fig. 4 is an optical image received by the photoelectric conversion section. It is a figure showing an example. 3a, -, 3d... Photoconductor, 4... Semiconductor pellet, 5... Objective optical system, 6... Eyepiece optical system, 7...
ITV camera, 8... Binarization circuit, 9... Signal processing circuit, ○I... Scratch.

Claims (1)

【特許請求の範囲】[Claims] 1 光源と、この光源からの光を平行光に変換す
るレンズ系と、被検体表面に形成された互いに直
交する各凹凸パターンに対してそれぞれ光軸が
45゜づつずれかつそれぞれ前記被検体表面に対し
て20〜30゜の照射角度となるように配置され前記
レンズ系で変換された平行光を前記被検体表面の
同一位置に照射する4本の光伝導体と、前記被検
体表面の垂直上方に配置され前記各光伝導体の平
行光の照射により得られる傷からの散乱光を受光
する光電変換部と、この光電変換部により得られ
る画像信号からレベル判定等して前記被検体表面
の傷の有無や位置、大きさ等の傷情報を得る信号
処理部とを具備したことを特徴とする表面傷検出
装置。
1. A light source, a lens system that converts the light from this light source into parallel light, and an optical axis that is aligned with each of the mutually orthogonal uneven patterns formed on the surface of the subject.
Four beams of light that are shifted by 45 degrees and arranged so that each has an irradiation angle of 20 to 30 degrees with respect to the surface of the object to be examined, and that irradiate the same position on the surface of the object with parallel light that has been converted by the lens system. A conductor, a photoelectric conversion unit that is arranged vertically above the surface of the subject and receives scattered light from a scratch obtained by irradiating each of the photoconductors with parallel light, and an image signal obtained by this photoelectric conversion unit. A surface flaw detection device comprising: a signal processing unit that performs level determination and the like to obtain flaw information such as the presence or absence, position, and size of flaws on the surface of the subject.
JP966283A 1982-09-21 1983-01-24 Surface flaw detecting apparatus Granted JPS59135353A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP966283A JPS59135353A (en) 1983-01-24 1983-01-24 Surface flaw detecting apparatus
US06/534,119 US4601577A (en) 1982-09-21 1983-09-20 Method and apparatus for detecting defects in a pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP966283A JPS59135353A (en) 1983-01-24 1983-01-24 Surface flaw detecting apparatus

Publications (2)

Publication Number Publication Date
JPS59135353A JPS59135353A (en) 1984-08-03
JPH0236893B2 true JPH0236893B2 (en) 1990-08-21

Family

ID=11726424

Family Applications (1)

Application Number Title Priority Date Filing Date
JP966283A Granted JPS59135353A (en) 1982-09-21 1983-01-24 Surface flaw detecting apparatus

Country Status (1)

Country Link
JP (1) JPS59135353A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004264025A (en) * 2003-01-09 2004-09-24 Matsushita Electric Ind Co Ltd Image recognition device and method
JP2004264026A (en) * 2003-01-09 2004-09-24 Matsushita Electric Ind Co Ltd Image recognition device and method

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0743322B2 (en) * 1985-07-19 1995-05-15 株式会社日立製作所 Inspection method and device
JPH02223021A (en) * 1988-11-18 1990-09-05 Csk Corp Method and device for identifying defect in optical recording medium
JP4973062B2 (en) * 2006-08-14 2012-07-11 ヤマハ株式会社 Semiconductor chip inspection method and wafer crack inspection apparatus
KR20080015363A (en) 2006-08-14 2008-02-19 야마하 가부시키가이샤 Method and apparatus for inspection of wafer and semiconductor device
JP6436664B2 (en) 2014-07-14 2018-12-12 住友化学株式会社 Substrate inspection apparatus and substrate inspection method

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54101389A (en) * 1978-01-27 1979-08-09 Hitachi Ltd Foreign matter inspecting method
JPS564046A (en) * 1979-06-26 1981-01-16 Nissan Motor Co Ltd Lamination type membrane-covered oxygen sensor
JPS5713340A (en) * 1980-06-27 1982-01-23 Hitachi Ltd Inspection apparatus for surface defect

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54101389A (en) * 1978-01-27 1979-08-09 Hitachi Ltd Foreign matter inspecting method
JPS564046A (en) * 1979-06-26 1981-01-16 Nissan Motor Co Ltd Lamination type membrane-covered oxygen sensor
JPS5713340A (en) * 1980-06-27 1982-01-23 Hitachi Ltd Inspection apparatus for surface defect

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004264025A (en) * 2003-01-09 2004-09-24 Matsushita Electric Ind Co Ltd Image recognition device and method
JP2004264026A (en) * 2003-01-09 2004-09-24 Matsushita Electric Ind Co Ltd Image recognition device and method

Also Published As

Publication number Publication date
JPS59135353A (en) 1984-08-03

Similar Documents

Publication Publication Date Title
US4876457A (en) Method and apparatus for differentiating a planar textured surface from a surrounding background
CN107003254A (en) Equipment, method and computer program product for the defects detection in workpiece
JP2999712B2 (en) Edge defect inspection method and apparatus
JPH1151622A (en) Method and device for foreign matter inspection
JPH0236893B2 (en)
JP4151306B2 (en) Inspection method of inspection object
US20030117616A1 (en) Wafer external inspection apparatus
JPS63143831A (en) Optical apparatus for detecting defect on face plate
JPS63165738A (en) Flaw inspection apparatus for transparent substrate
JP4523310B2 (en) Foreign matter identification method and foreign matter identification device
JP3089079B2 (en) Circuit pattern defect inspection method
JPH07104290B2 (en) Bottle inspection equipment
US5745239A (en) Multiple focal plane image comparison for defect detection and classification
JP2010139434A (en) Test apparatus and test method for discriminating between foreign substance and scar
JPS6232345A (en) Defect detecting device
JPH0254494B2 (en)
JP2559470B2 (en) Appearance inspection method
JPH08190633A (en) Defect judging method
JPH0587781B2 (en)
KR102592277B1 (en) Apparatus and method for performing internal defects inspection of an electronic component
JPH0299806A (en) Inspection of surface defect
JPH06160065A (en) Inspecting device for notch
JPH07113757A (en) Defect detection method for light transmissive object
JPH04344447A (en) Detecting device for defect in transparent glass substrate
JPS5848837A (en) Defect checking method