JPH023620Y2 - - Google Patents
Info
- Publication number
- JPH023620Y2 JPH023620Y2 JP1981147782U JP14778281U JPH023620Y2 JP H023620 Y2 JPH023620 Y2 JP H023620Y2 JP 1981147782 U JP1981147782 U JP 1981147782U JP 14778281 U JP14778281 U JP 14778281U JP H023620 Y2 JPH023620 Y2 JP H023620Y2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- container
- epitaxial growth
- solution
- lid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 39
- 239000007791 liquid phase Substances 0.000 claims description 13
- 239000012535 impurity Substances 0.000 claims description 5
- 239000000155 melt Substances 0.000 claims description 3
- 239000012808 vapor phase Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims 4
- 239000007788 liquid Substances 0.000 claims 2
- 230000008018 melting Effects 0.000 claims 1
- 238000002844 melting Methods 0.000 claims 1
- 239000013078 crystal Substances 0.000 description 13
- 125000006850 spacer group Chemical group 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000002791 soaking Methods 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005485 electric heating Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1981147782U JPS5853136U (ja) | 1981-10-06 | 1981-10-06 | 液相エピタキシヤル成長装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1981147782U JPS5853136U (ja) | 1981-10-06 | 1981-10-06 | 液相エピタキシヤル成長装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5853136U JPS5853136U (ja) | 1983-04-11 |
| JPH023620Y2 true JPH023620Y2 (US20100056889A1-20100304-C00004.png) | 1990-01-29 |
Family
ID=29940628
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1981147782U Granted JPS5853136U (ja) | 1981-10-06 | 1981-10-06 | 液相エピタキシヤル成長装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5853136U (US20100056889A1-20100304-C00004.png) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4939376A (US20100056889A1-20100304-C00004.png) * | 1972-08-14 | 1974-04-12 | ||
| JPS5639538A (en) * | 1979-09-07 | 1981-04-15 | Hitachi Ltd | Pattern forming method |
| JPS5690573A (en) * | 1979-12-24 | 1981-07-22 | Toshiba Corp | Liquid phase growing process for light emitting diode |
-
1981
- 1981-10-06 JP JP1981147782U patent/JPS5853136U/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4939376A (US20100056889A1-20100304-C00004.png) * | 1972-08-14 | 1974-04-12 | ||
| JPS5639538A (en) * | 1979-09-07 | 1981-04-15 | Hitachi Ltd | Pattern forming method |
| JPS5690573A (en) * | 1979-12-24 | 1981-07-22 | Toshiba Corp | Liquid phase growing process for light emitting diode |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5853136U (ja) | 1983-04-11 |
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