JPH0236034U - - Google Patents
Info
- Publication number
- JPH0236034U JPH0236034U JP11450188U JP11450188U JPH0236034U JP H0236034 U JPH0236034 U JP H0236034U JP 11450188 U JP11450188 U JP 11450188U JP 11450188 U JP11450188 U JP 11450188U JP H0236034 U JPH0236034 U JP H0236034U
- Authority
- JP
- Japan
- Prior art keywords
- combustion chamber
- process tube
- semiconductor manufacturing
- hydrogen combustion
- diffusion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 238000002485 combustion reaction Methods 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims 3
- 239000004065 semiconductor Substances 0.000 claims 3
- 238000004519 manufacturing process Methods 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 238000001704 evaporation Methods 0.000 claims 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 claims 1
- 239000010453 quartz Substances 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Description
第１図は本実施例の断面図、第２図は従来例の
説明図である。 １……プロセスチユーブ、７……水素燃焼室、
８……連結管。
説明図である。 １……プロセスチユーブ、７……水素燃焼室、
８……連結管。
Claims (1)
- 半導体製造の拡散装置に於て、半導体シリコン
ウエハをのせた石英ボートを入れて、ＰＯＣｌ３
を用いて拡散させるプロセスチユーブと、Ｏ２、
Ｈ２及びＮ２にて水蒸気を蒸発させる水素燃焼室
とを別体に設け、前記プロセスチユーブと前記水
素燃焼室と連結管に連絡した半導体製造の拡散装
置。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11450188U JPH0236034U (ja) | 1988-08-31 | 1988-08-31 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11450188U JPH0236034U (ja) | 1988-08-31 | 1988-08-31 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0236034U true JPH0236034U (ja) | 1990-03-08 |
Family
ID=31355310
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11450188U Pending JPH0236034U (ja) | 1988-08-31 | 1988-08-31 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0236034U (ja) |
-
1988
- 1988-08-31 JP JP11450188U patent/JPH0236034U/ja active Pending