JPH0235456B2 - - Google Patents

Info

Publication number
JPH0235456B2
JPH0235456B2 JP61013301A JP1330186A JPH0235456B2 JP H0235456 B2 JPH0235456 B2 JP H0235456B2 JP 61013301 A JP61013301 A JP 61013301A JP 1330186 A JP1330186 A JP 1330186A JP H0235456 B2 JPH0235456 B2 JP H0235456B2
Authority
JP
Japan
Prior art keywords
wafer
semiconductor
groove
single crystal
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61013301A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61198637A (ja
Inventor
Mitsuru Sakamoto
Kunyuki Hamano
Masahiko Nakamae
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP1330186A priority Critical patent/JPS61198637A/ja
Publication of JPS61198637A publication Critical patent/JPS61198637A/ja
Publication of JPH0235456B2 publication Critical patent/JPH0235456B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
JP1330186A 1986-01-24 1986-01-24 半導体単結晶ウエハ−の製法 Granted JPS61198637A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1330186A JPS61198637A (ja) 1986-01-24 1986-01-24 半導体単結晶ウエハ−の製法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1330186A JPS61198637A (ja) 1986-01-24 1986-01-24 半導体単結晶ウエハ−の製法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP9669980A Division JPS5721826A (en) 1980-07-15 1980-07-15 Manufacture of semiconductor single crystal wafer

Publications (2)

Publication Number Publication Date
JPS61198637A JPS61198637A (ja) 1986-09-03
JPH0235456B2 true JPH0235456B2 (enrdf_load_stackoverflow) 1990-08-10

Family

ID=11829359

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1330186A Granted JPS61198637A (ja) 1986-01-24 1986-01-24 半導体単結晶ウエハ−の製法

Country Status (1)

Country Link
JP (1) JPS61198637A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0339203U (enrdf_load_stackoverflow) * 1989-08-28 1991-04-16

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4904922B2 (ja) * 2006-05-26 2012-03-28 トヨタ自動車株式会社 半導体基板製造方法及び半導体基板

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5487066A (en) * 1977-12-22 1979-07-11 Mitsubishi Electric Corp Semiconductor wafer
JPS5721826A (en) * 1980-07-15 1982-02-04 Nec Corp Manufacture of semiconductor single crystal wafer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0339203U (enrdf_load_stackoverflow) * 1989-08-28 1991-04-16

Also Published As

Publication number Publication date
JPS61198637A (ja) 1986-09-03

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