JPH023542B2 - - Google Patents

Info

Publication number
JPH023542B2
JPH023542B2 JP11220682A JP11220682A JPH023542B2 JP H023542 B2 JPH023542 B2 JP H023542B2 JP 11220682 A JP11220682 A JP 11220682A JP 11220682 A JP11220682 A JP 11220682A JP H023542 B2 JPH023542 B2 JP H023542B2
Authority
JP
Japan
Prior art keywords
charge transfer
charge
output gate
transfer device
terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP11220682A
Other languages
English (en)
Japanese (ja)
Other versions
JPS593972A (ja
Inventor
Seiji Igarashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP11220682A priority Critical patent/JPS593972A/ja
Publication of JPS593972A publication Critical patent/JPS593972A/ja
Publication of JPH023542B2 publication Critical patent/JPH023542B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76816—Output structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP11220682A 1982-06-29 1982-06-29 電荷転送装置 Granted JPS593972A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11220682A JPS593972A (ja) 1982-06-29 1982-06-29 電荷転送装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11220682A JPS593972A (ja) 1982-06-29 1982-06-29 電荷転送装置

Publications (2)

Publication Number Publication Date
JPS593972A JPS593972A (ja) 1984-01-10
JPH023542B2 true JPH023542B2 (fr) 1990-01-24

Family

ID=14580904

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11220682A Granted JPS593972A (ja) 1982-06-29 1982-06-29 電荷転送装置

Country Status (1)

Country Link
JP (1) JPS593972A (fr)

Also Published As

Publication number Publication date
JPS593972A (ja) 1984-01-10

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