JPH023540B2 - - Google Patents

Info

Publication number
JPH023540B2
JPH023540B2 JP55143357A JP14335780A JPH023540B2 JP H023540 B2 JPH023540 B2 JP H023540B2 JP 55143357 A JP55143357 A JP 55143357A JP 14335780 A JP14335780 A JP 14335780A JP H023540 B2 JPH023540 B2 JP H023540B2
Authority
JP
Japan
Prior art keywords
semiconductor
gate
layer
semiconductor layer
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP55143357A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5768073A (en
Inventor
Keiichi Oohata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP14335780A priority Critical patent/JPS5768073A/ja
Publication of JPS5768073A publication Critical patent/JPS5768073A/ja
Publication of JPH023540B2 publication Critical patent/JPH023540B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
JP14335780A 1980-10-14 1980-10-14 Field effect transistor Granted JPS5768073A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14335780A JPS5768073A (en) 1980-10-14 1980-10-14 Field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14335780A JPS5768073A (en) 1980-10-14 1980-10-14 Field effect transistor

Publications (2)

Publication Number Publication Date
JPS5768073A JPS5768073A (en) 1982-04-26
JPH023540B2 true JPH023540B2 (de) 1990-01-24

Family

ID=15336897

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14335780A Granted JPS5768073A (en) 1980-10-14 1980-10-14 Field effect transistor

Country Status (1)

Country Link
JP (1) JPS5768073A (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0596851U (ja) * 1992-06-04 1993-12-27 コニカ株式会社 １１０サイズ用ネガキャリアアダプター

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5844770A (ja) * 1981-09-10 1983-03-15 Fujitsu Ltd 半導体装置
JPS59172777A (ja) * 1983-03-23 1984-09-29 Oki Electric Ind Co Ltd 半導体装置
JPS6037784A (ja) * 1983-08-10 1985-02-27 Matsushita Electric Ind Co Ltd 電界効果型トランジスタ
JPS62115781A (ja) * 1985-11-15 1987-05-27 Hitachi Ltd 電界効果トランジスタ
JP2679396B2 (ja) * 1990-10-25 1997-11-19 日本電気株式会社 電界効果トランジスタ
JP2978972B2 (ja) * 1992-03-12 1999-11-15 富士通株式会社 半導体装置の製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5161265A (en) * 1974-11-25 1976-05-27 Handotai Kenkyu Shinkokai 335 zokukagobutsuhandotaisoshi
JPS53111283A (en) * 1977-03-09 1978-09-28 Matsushita Electric Ind Co Ltd Compound semiconductor device and production of the same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5161265A (en) * 1974-11-25 1976-05-27 Handotai Kenkyu Shinkokai 335 zokukagobutsuhandotaisoshi
JPS53111283A (en) * 1977-03-09 1978-09-28 Matsushita Electric Ind Co Ltd Compound semiconductor device and production of the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0596851U (ja) * 1992-06-04 1993-12-27 コニカ株式会社 １１０サイズ用ネガキャリアアダプター

Also Published As

Publication number Publication date
JPS5768073A (en) 1982-04-26

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