JPH0234453B2 - - Google Patents
Info
- Publication number
- JPH0234453B2 JPH0234453B2 JP57028765A JP2876582A JPH0234453B2 JP H0234453 B2 JPH0234453 B2 JP H0234453B2 JP 57028765 A JP57028765 A JP 57028765A JP 2876582 A JP2876582 A JP 2876582A JP H0234453 B2 JPH0234453 B2 JP H0234453B2
- Authority
- JP
- Japan
- Prior art keywords
- resist
- layer
- pattern
- resist layer
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H10P50/287—
Landscapes
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57028765A JPS58147033A (ja) | 1982-02-26 | 1982-02-26 | パタ−ン形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57028765A JPS58147033A (ja) | 1982-02-26 | 1982-02-26 | パタ−ン形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58147033A JPS58147033A (ja) | 1983-09-01 |
| JPH0234453B2 true JPH0234453B2 (cg-RX-API-DMAC10.html) | 1990-08-03 |
Family
ID=12257495
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57028765A Granted JPS58147033A (ja) | 1982-02-26 | 1982-02-26 | パタ−ン形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58147033A (cg-RX-API-DMAC10.html) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60263435A (ja) * | 1984-06-11 | 1985-12-26 | Rohm Co Ltd | パタ−ニング方法 |
| JPH01200628A (ja) * | 1988-02-05 | 1989-08-11 | Toshiba Corp | ドライエッチング方法 |
| JP2722768B2 (ja) * | 1990-04-26 | 1998-03-09 | ソニー株式会社 | 多層レジスト層のエッチング方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56135928A (en) * | 1980-03-27 | 1981-10-23 | Fujitsu Ltd | Forming method for pattern of silicone resin |
| JPS56140351A (en) * | 1980-04-04 | 1981-11-02 | Fujitsu Ltd | Formation of pattern |
-
1982
- 1982-02-26 JP JP57028765A patent/JPS58147033A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58147033A (ja) | 1983-09-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0714119B1 (en) | Pattern forming process and process for preparing semiconductor device utilizing said pattern forming process | |
| US5968844A (en) | Method for etching nitride features in integrated circuit construction | |
| US5308742A (en) | Method of etching anti-reflection coating | |
| JPH0336300B2 (cg-RX-API-DMAC10.html) | ||
| US4698238A (en) | Pattern-forming method | |
| KR920010775B1 (ko) | 실리콘 표면상의 실리콘 산화막 제거방법 | |
| JPS6360891B2 (cg-RX-API-DMAC10.html) | ||
| JPS6221151A (ja) | パタ−ン形成方法 | |
| JPH0234453B2 (cg-RX-API-DMAC10.html) | ||
| JPH035573B2 (cg-RX-API-DMAC10.html) | ||
| JPH04240729A (ja) | パターン形成方法 | |
| JPH0734109B2 (ja) | フォトマスクの製造方法 | |
| JPH03174724A (ja) | パターン形成方法 | |
| Lu et al. | 180-nm mask fabrication process using ZEP 7000, multipass gray, GHOST, and dry etch for MEBES 5000 | |
| JPH07130709A (ja) | 高融点金属膜のドライエッチング方法 | |
| JPS6219051B2 (cg-RX-API-DMAC10.html) | ||
| US20050221019A1 (en) | Method of improving the uniformity of a patterned resist on a photomask | |
| JPH04348030A (ja) | 傾斜エッチング法 | |
| JPS58212136A (ja) | 微細パタ−ンの形成方法 | |
| JPH0314172B2 (cg-RX-API-DMAC10.html) | ||
| JP4780264B2 (ja) | クロム系フォトマスクの形成方法 | |
| JPS5886726A (ja) | パタ−ン形成法 | |
| JPH0143453B2 (cg-RX-API-DMAC10.html) | ||
| JPS61247032A (ja) | テ−パエツチング方法 | |
| JPS6360898B2 (cg-RX-API-DMAC10.html) |