JPH023178A - メモリ装置 - Google Patents
メモリ装置Info
- Publication number
- JPH023178A JPH023178A JP1006003A JP600389A JPH023178A JP H023178 A JPH023178 A JP H023178A JP 1006003 A JP1006003 A JP 1006003A JP 600389 A JP600389 A JP 600389A JP H023178 A JPH023178 A JP H023178A
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- drain
- input
- signal
- transistors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Static Random-Access Memory (AREA)
- Dram (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1006003A JPH023178A (ja) | 1989-01-17 | 1989-01-17 | メモリ装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1006003A JPH023178A (ja) | 1989-01-17 | 1989-01-17 | メモリ装置 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59016106A Division JPS59139193A (ja) | 1984-02-02 | 1984-02-02 | メモリ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH023178A true JPH023178A (ja) | 1990-01-08 |
JPH0321998B2 JPH0321998B2 (enrdf_load_stackoverflow) | 1991-03-25 |
Family
ID=11626571
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1006003A Granted JPH023178A (ja) | 1989-01-17 | 1989-01-17 | メモリ装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH023178A (enrdf_load_stackoverflow) |
-
1989
- 1989-01-17 JP JP1006003A patent/JPH023178A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPH0321998B2 (enrdf_load_stackoverflow) | 1991-03-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4247791A (en) | CMOS Memory sense amplifier | |
US4697112A (en) | Current-mirror type sense amplifier | |
US4136292A (en) | Voltage sensing circuit of differential input type | |
US5068830A (en) | High speed static ram sensing system | |
KR100236875B1 (ko) | 센스 앰프 회로를 갖는 반도체 ic 장치 | |
US5355028A (en) | Lower power CMOS buffer amplifier for use in integrated circuit substrate bias generators | |
JP3169987B2 (ja) | 入力緩衝回路を含む集積回路 | |
JPH0821236B2 (ja) | 半導体記憶装置 | |
JP2756797B2 (ja) | Fetセンス・アンプ | |
JP3800520B2 (ja) | 半導体集積回路装置と半導体装置 | |
KR950010620B1 (ko) | 반도체 기억장치 | |
JPH04238197A (ja) | センスアンプ回路 | |
US4658160A (en) | Common gate MOS differential sense amplifier | |
JPH0319198A (ja) | 集積メモリ | |
US4541077A (en) | Self compensating ROM circuit | |
US5550777A (en) | High speed, low power clocking sense amplifier | |
US6597612B2 (en) | Sense amplifier circuit | |
JP2523736B2 (ja) | 半導体記憶装置 | |
JPH023178A (ja) | メモリ装置 | |
JPH023179A (ja) | メモリ装置 | |
US4453235A (en) | Integrated memory circuits | |
JPH07230692A (ja) | マルチポートメモリ | |
JPH0259559B2 (enrdf_load_stackoverflow) | ||
JPH022713A (ja) | 半導体集積回路 | |
JP2514988B2 (ja) | センスアンプ回路 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 19920317 |