JPH0231152U - - Google Patents

Description

[Brief explanation of drawings]

FIG. 1 is a plan view of a semiconductor device for a bridge type full-wave rectifier circuit according to an embodiment of the present invention, FIG. 2 is a sectional view taken along the line - in FIG. 1, and FIG. 3 is a - in FIG. 1.
FIG. 4 is a cross-sectional view taken along the line --- in FIG. 1, and FIG. 5 is a cross-sectional view taken along the --- line in FIG. FIG. 6 is a circuit diagram of a bridge type full-wave rectifier circuit. 2... Semiconductor chip, 4... First epitaxial layer region, 6... First diffusion layer region, 8... Second diffusion layer region, 10, 12, 14... Electrode, 16... Second epitaxial layer region , 18...Third diffusion layer region, 20...Fourth diffusion layer region, 22, 24, 26...
electrode.

Claims (1)

[Claims for Utility Model Registration] A first epitaxial layer region of one conductivity type and first and second diffusion layer regions of the opposite conductivity type are provided on one side of a semiconductor chip, and electrodes are formed in the window openings of the first epitaxial layer region and both of the diffusion layer regions, and a second epitaxial layer of the same conductivity type as that of the two diffusion layer regions is formed on the other side of the semiconductor chip. an epitaxial layer region and third and fourth diffusion layer regions of the same conductivity type as the epitaxial layer region, and the second epitaxial layer region and the third and fourth diffusion layer regions are provided. An electrode is formed in the window opening of each layer region, the one side and the other side are insulated and separated from each other, and the electrodes of each of the first and third diffusion layer regions and the second and fourth diffusion layer regions are insulated from each other. A semiconductor element for a bridge type full-wave rectifier circuit, characterized in that electrodes in each diffusion layer region are connected to each other.