JPH02307889A - 液相エピタキシャル成長方法 - Google Patents
液相エピタキシャル成長方法Info
- Publication number
- JPH02307889A JPH02307889A JP12678089A JP12678089A JPH02307889A JP H02307889 A JPH02307889 A JP H02307889A JP 12678089 A JP12678089 A JP 12678089A JP 12678089 A JP12678089 A JP 12678089A JP H02307889 A JPH02307889 A JP H02307889A
- Authority
- JP
- Japan
- Prior art keywords
- raw material
- liquid phase
- growth method
- epitaxial growth
- phase epitaxial
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000012010 growth Effects 0.000 title claims abstract description 23
- 238000000034 method Methods 0.000 title claims abstract description 22
- 239000007791 liquid phase Substances 0.000 title claims description 17
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 239000004065 semiconductor Substances 0.000 claims abstract description 10
- 238000010438 heat treatment Methods 0.000 claims abstract description 6
- 239000002994 raw material Substances 0.000 claims description 22
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 11
- 238000005253 cladding Methods 0.000 claims description 9
- 239000000155 melt Substances 0.000 claims description 7
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims 1
- 125000005842 heteroatom Chemical group 0.000 abstract 2
- 239000007858 starting material Substances 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- NBJBFKVCPBJQMR-APKOLTMOSA-N nff 1 Chemical compound C([C@H](NC(=O)[C@H](CCC(N)=O)NC(=O)[C@H](CCC(N)=O)NC(=O)[C@@H]1CCCN1C(=O)[C@H](CCCCN)NC(=O)[C@@H]1CCCN1C(=O)CC=1C2=CC=C(C=C2OC(=O)C=1)OC)C(=O)N[C@@H](CC=1C=CC=CC=1)C(=O)NCC(=O)N[C@@H](CC(C)C)C(=O)N[C@@H](CCCCNC=1C(=CC(=CC=1)[N+]([O-])=O)[N+]([O-])=O)C(=O)NCC(O)=O)C1=CC=CC=C1 NBJBFKVCPBJQMR-APKOLTMOSA-N 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12678089A JPH02307889A (ja) | 1989-05-22 | 1989-05-22 | 液相エピタキシャル成長方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12678089A JPH02307889A (ja) | 1989-05-22 | 1989-05-22 | 液相エピタキシャル成長方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02307889A true JPH02307889A (ja) | 1990-12-21 |
| JPH0571557B2 JPH0571557B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-10-07 |
Family
ID=14943750
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12678089A Granted JPH02307889A (ja) | 1989-05-22 | 1989-05-22 | 液相エピタキシャル成長方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02307889A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0517282A (ja) * | 1991-06-30 | 1993-01-26 | Shin Etsu Handotai Co Ltd | 液相エピタキシヤル成長法及び装置 |
| US5712199A (en) * | 1990-10-16 | 1998-01-27 | Canon Kabushiki Kaisha | Method for making semiconductor body and photovoltaic device |
-
1989
- 1989-05-22 JP JP12678089A patent/JPH02307889A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5712199A (en) * | 1990-10-16 | 1998-01-27 | Canon Kabushiki Kaisha | Method for making semiconductor body and photovoltaic device |
| JPH0517282A (ja) * | 1991-06-30 | 1993-01-26 | Shin Etsu Handotai Co Ltd | 液相エピタキシヤル成長法及び装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0571557B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-10-07 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |