JPH02306222A - Liquid crystal display device - Google Patents
Liquid crystal display deviceInfo
- Publication number
- JPH02306222A JPH02306222A JP1126881A JP12688189A JPH02306222A JP H02306222 A JPH02306222 A JP H02306222A JP 1126881 A JP1126881 A JP 1126881A JP 12688189 A JP12688189 A JP 12688189A JP H02306222 A JPH02306222 A JP H02306222A
- Authority
- JP
- Japan
- Prior art keywords
- light
- liquid crystal
- shielding layer
- layer
- crystal display
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 239000004065 semiconductor Substances 0.000 claims abstract description 12
- 239000010409 thin film Substances 0.000 abstract description 18
- 239000000463 material Substances 0.000 abstract description 11
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 abstract description 4
- 229910000423 chromium oxide Inorganic materials 0.000 abstract description 4
- 230000000630 rising effect Effects 0.000 abstract description 4
- 229910052782 aluminium Inorganic materials 0.000 abstract description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 10
- 229920003002 synthetic resin Polymers 0.000 description 7
- 239000000057 synthetic resin Substances 0.000 description 7
- 239000011521 glass Substances 0.000 description 6
- 239000011651 chromium Substances 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 description 2
- 238000003487 electrochemical reaction Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000049 pigment Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133512—Light shielding layers, e.g. black matrix
Landscapes
- Liquid Crystal (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、たとえば薄膜トランジスタなどを付加したア
クティブマトリックス方式液晶表示装置などのような液
晶表示装置に関し、もつと詳しくは、たとえば強い光が
照射されるプロジェクション用の透過層液晶表示装置な
どとして好適に用いられる液晶表示装置に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a liquid crystal display device such as an active matrix type liquid crystal display device to which thin film transistors are added. The present invention relates to a liquid crystal display device suitably used as a transparent layer liquid crystal display device for use in other applications.
従来の技術 第３図は、典型的な先行技術の断面図である。Conventional technology FIG. 3 is a typical prior art cross-sectional view.
一方のガラス基板１上には、絵素電極２が設けられ、こ
の絵素電極２にはマトリックス状に形成された電極から
薄膜トランジスタ３を介して、一方電位が印加される。A picture element electrode 2 is provided on one of the glass substrates 1, and one potential is applied to the picture element electrode 2 from electrodes formed in a matrix through a thin film transistor 3.
他方のガラス基板４上には、薄膜トランジスタ３に対応
した位置に遮光層５が設けられ、このガラス基板４の遮
光層５および残余の表面には、平面状の電極６が形成さ
れて基板１．４間には液晶７が介在される。遮光層５は
細い幅を有し、格子状に形成される。この遮光層５によ
って、コントラストの向上を図り、一方（ｔ＋！！（第
３図の上方）からの光を遮断して、絵素電極２と薄膜ト
ランジスタ３に関連して接続されているゲートおよびソ
ース電極の導体の間隙からの光漏れ防止によるコントラ
ストの向上を図り、また一方間（第３図の上方）からの
光が薄膜トランジスタ３に照射されて特性が劣化するの
を防ぐ。A light-shielding layer 5 is provided on the other glass substrate 4 at a position corresponding to the thin film transistor 3, and a planar electrode 6 is formed on the light-shielding layer 5 and the remaining surface of the glass substrate 4. A liquid crystal 7 is interposed between the two. The light shielding layer 5 has a narrow width and is formed in a lattice shape. This light-shielding layer 5 improves the contrast and blocks light from (t+!! (upper part of FIG. 3)), and gates and sources connected in relation to the picture element electrode 2 and the thin film transistor 3. The contrast is improved by preventing light leakage from the gap between the electrode conductors, and the thin film transistor 3 is prevented from being irradiated with light from one side (the upper side in FIG. 3) and deteriorating its characteristics.
先行技術では、遮光Ｎ５はガラス基板４に付着性が良好
であるクロムＣｒが膜厚１０００〜２０００人で形成さ
れる。またこの遮光層５はクロムに代えて、黒色合成樹
脂が用いられる。黒色合成樹脂は、たとえば黒色の染色
材料または黒色顔料を透明６成樹脂に分散した材料から
成る。この黒色合成樹脂は、たとえば１〜２μｍの膜厚
を有する。In the prior art, the light shield N5 is formed by forming chromium Cr, which has good adhesion, on the glass substrate 4 to a thickness of 1,000 to 2,000 yen. Further, for this light shielding layer 5, black synthetic resin is used instead of chromium. The black synthetic resin is made of, for example, a black dyed material or a material in which a black pigment is dispersed in a transparent six-component resin. This black synthetic resin has a thickness of, for example, 1 to 2 μm.
発明が解決しようとする課題
このような先行技術では、遮光層５がクロムまたは黒色
合成樹脂であり、したがってその光の反射率が低い。し
たがって参照符８ａで示されるように入射する光が遮光
１１５によって吸収され、あるいはまた参照符８ｂで示
すように多重反射によって遮光層５に光が吸収される。Problems to be Solved by the Invention In such prior art, the light shielding layer 5 is made of chromium or black synthetic resin, and therefore has a low light reflectance. Therefore, the incident light is absorbed by the light shielding layer 5, as indicated by reference numeral 8a, or is absorbed by the light shielding layer 5 through multiple reflections, as indicated by reference numeral 8b.
そのため遮光層５の温度が上昇する。したがって液晶７
の温度が上昇することになり、これによって、液晶７の
電極界面での電気化学反応が促進されることになり、ま
た薄膜トランジスタ３のスレッシュホールド電圧が低下
してオフ電流が増大する。これによって、表示品位の著
しい低下が生じる。Therefore, the temperature of the light shielding layer 5 increases. Therefore, liquid crystal 7
As a result, the electrochemical reaction at the electrode interface of the liquid crystal 7 is promoted, and the threshold voltage of the thin film transistor 3 is lowered to increase the off-state current. This causes a significant deterioration in display quality.
また遮光Ｎ５が高い反射率を有する場きには、参照符８
ｂで示すように多重反射した光が、遮光Ｎ５で薄膜トラ
ンジスタ３に届き、これによって薄膜トランジスタ３の
特性が劣化する。In addition, when the light shielding N5 has a high reflectance, reference numeral 8
As shown by b, the multiple reflected light reaches the thin film transistor 3 through the shielding N5, thereby degrading the characteristics of the thin film transistor 3.
本発明の目的は、光による表示品位の低下を生じないよ
うにした液晶表示装置を提供することである。An object of the present invention is to provide a liquid crystal display device that does not cause deterioration in display quality due to light.
課題を解決するための手段
本発明は、一方の基板上に形成された半導体スイッチン
グ素子を介して絵素電極に、一方電位を与え、
他方の透光性基板上に前記絵素電極に対応して形成した
対向電極に他方電位を与え、
両基板間に液晶が充填され、
前記他方基板上には、半導体スイッチング素子に対応し
て遮光層が配置される液晶表示装置において、
前記遮光層は、外方の表面で反射率が高く、内方の表面
で反射率が低く構成されることを特徴とする液晶表示装
置である。Means for Solving the Problems The present invention applies a potential to a picture element electrode via a semiconductor switching element formed on one substrate, and applies a potential to a picture element electrode corresponding to the picture element electrode on the other transparent substrate. In the liquid crystal display device, a liquid crystal is filled between both substrates, and a light-shielding layer is disposed on the other substrate in correspondence with the semiconductor switching element, the light-shielding layer comprising: This is a liquid crystal display device characterized by having a high reflectance on the outer surface and a low reflectance on the inner surface.
作 用
本発明に従えば、遮光層は外方の表面、すなわち液晶お
よびスイチッング素子などとは反対側の表面で、反射率
が高く、たとえばその反射率が８０％以上である。これ
によって、外部からの光が遮光層の反射率が高い表面で
反射され、光が吸収されず、そのため遮光層、したがっ
て液晶および半導体スイッチング素子の温度が上昇する
ことが防がれる。Function According to the present invention, the light-shielding layer has a high reflectance, for example, 80% or more, on the outer surface, that is, the surface opposite to the liquid crystal and the switching element. As a result, light from the outside is reflected by the highly reflective surface of the light-shielding layer and is not absorbed, thereby preventing the temperature of the light-shielding layer, and therefore the liquid crystal and semiconductor switching elements, from increasing.
遮光層の内方の表面、すなわち液晶およびスイチッング
素子側では、光の反射率が低く、たとえば３５％未満で
ある。したがって外方から入射した光が一方基板に反射
した後に、遮光層によって吸収されることになり、その
遮光層による反射光がスイチッング素子に照射されるこ
とはない。これによって、スイチッング素子の特性の劣
化を防ぐことができる。The inner surface of the light shielding layer, that is, the liquid crystal and switching element side, has a low light reflectance, for example, less than 35%. Therefore, after light incident from the outside is reflected on one substrate, it is absorbed by the light shielding layer, and the switching element is not irradiated with light reflected by the light shielding layer. This can prevent deterioration of the characteristics of the switching element.
実施例 第１図は、本発明の一実施例の断面図である。Example FIG. 1 is a sectional view of one embodiment of the present invention.
この液晶表示装置は、一対のガラスなどの透光性基板１
１．１２の間に液晶１３が充填されて介在される。一方
の基板１１上には、マトリックス状に配置された導体に
接続された半導体スイチッング素子、たとえば薄膜トラ
ンジスタ１４が設けられ、この薄膜トランジスタ１４を
介して透明な絵素電極１５に一方の電位が与えられる。This liquid crystal display device consists of a pair of light-transmitting substrates 1 such as glasses, etc.
Liquid crystal 13 is filled and interposed between 1.12 and 1.12. A semiconductor switching element, for example a thin film transistor 14, connected to conductors arranged in a matrix is provided on one substrate 11, and one potential is applied to a transparent picture element electrode 15 via the thin film transistor 14.
この薄膜トランジスタ１４は、たとえばガラス基板１６
上に電界効果トランジスタが形成された構成を有し、参
照符１７はゲート電極であり、参照符１８はソース電極
を示している。薄膜トランジスタ１４および絵素電極１
５上には配向膜が形成され、この配向膜には配向処理が
行われる。第１図では、この配向膜は図解の便宜のため
に省略されている。This thin film transistor 14 is constructed using, for example, a glass substrate 16.
It has a structure in which a field effect transistor is formed thereon, and reference numeral 17 indicates a gate electrode, and reference numeral 18 indicates a source electrode. Thin film transistor 14 and picture element electrode 1
An alignment film is formed on the substrate 5, and an alignment process is performed on this alignment film. In FIG. 1, this alignment film is omitted for convenience of illustration.
他方の基板１２上には、薄膜トランジスタ１４の位置に
対応して、絵素ｔｉ１５以外の領域に格子状に遮光層２
０が形成される。この遮光層２０は、その外方が反射率
が高い材料から成る第１層２１と、この第１層２１上に
重ねて形成され、反射率が低い材料から成る第２層２２
とから成る。On the other substrate 12, a light shielding layer 2 is formed in a grid pattern in areas other than the picture element ti15 corresponding to the positions of the thin film transistors 14.
0 is formed. This light shielding layer 20 includes a first layer 21 on the outside made of a material with high reflectance, and a second layer 22 formed on the first layer 21 and made of a material with low reflectance.
It consists of
第１層２１はアルミニウムであって、膜厚は１０００〜
２０００人である。第２層２２は、酸化クロムＣｒ ２
０−が４００〜７００人の膜厚で形成される。第２層２
２の上には、たとえばアクリル系などの透光性合成樹脂
材料から成る保護膜２３が形成される。この保護膜２３
の膜厚は、たとえば３０００人である。さらにその上に
は全面に亘って、膜厚１０００人の配向膜２４が形成さ
れる。The first layer 21 is made of aluminum and has a thickness of 1000~
There are 2000 people. The second layer 22 is chromium oxide Cr 2
0- is formed with a film thickness of 400 to 700 people. 2nd layer 2
A protective film 23 made of a translucent synthetic resin material such as acrylic is formed on the protective film 2 . This protective film 23
The film thickness is, for example, 3000 people. Furthermore, an alignment film 24 having a thickness of 1000 layers is formed over the entire surface.
この配向膜２４はポリイミドなどの材料から成り、その
表面は配向処理される。This alignment film 24 is made of a material such as polyimide, and its surface is subjected to an alignment treatment.
このようにして構成される液晶表示装置２６は、第２図
に示されるプロジェクション装置２７において用いられ
る。このプロジェクション装置２７は、光源２８とハー
フミラ−２９〜３４と、レンズ３５〜３７と、投影レン
ズ３８とを備え、さらに偏光板３９，４０．４１，４２
；４３，４４間に配置された本発明に従う液晶表示装置
２６，２６ａ、２６ｂが設けられる。液晶表示装置２６
は基板１２が光源２８ｒｓとなるように、基板１１が投
影レンズ３８側となるようにして、配置される。The liquid crystal display device 26 constructed in this manner is used in a projection device 27 shown in FIG. This projection device 27 includes a light source 28, half mirrors 29 to 34, lenses 35 to 37, and a projection lens 38, and further includes polarizing plates 39, 40, 41, 42.
; liquid crystal display devices 26, 26a, 26b according to the present invention arranged between 43, 44 are provided. Liquid crystal display device 26
is arranged so that the substrate 12 becomes the light source 28rs and the substrate 11 faces the projection lens 38 side.
こうして基板１２側から大きな強度で光が第１図の参照
符４６で示されるように入射されたとき、その光４６は
、遮光層２０の第１層２１において充分に反射され、し
たがって遮光層２０の温度上昇が防がれる。これによっ
て液晶１３の温度上昇が防がれ、これによって液晶１３
の電極界面での電気化学反応が抑制されるとともに、薄
膜トランジスタ１４の温度上昇による特性の劣化が防が
れる。In this way, when light with high intensity is incident from the substrate 12 side as shown by reference numeral 46 in FIG. temperature rise is prevented. This prevents the temperature of the liquid crystal 13 from rising.
The electrochemical reaction at the electrode interface is suppressed, and deterioration of the characteristics of the thin film transistor 14 due to temperature rise is prevented.
また参照符４７で示されるようにして液晶表示装置２６
内に入り込んだ光が、再び反射して遮光層２０の第２層
２２に照射されたとき、その途中反射した光は第２Ｎ２
２で充分に吸収される。したがって第２層２２を反射し
て、薄膜トランジスタ１４に光が入射されることを防ぐ
ことができる。Additionally, the liquid crystal display device 26 as indicated by reference numeral 47
When the light that has entered the interior is reflected again and irradiated to the second layer 22 of the light shielding layer 20, the light that was reflected midway is reflected in the second layer 22 of the light shielding layer 20.
2 is fully absorbed. Therefore, it is possible to prevent light from being reflected by the second layer 22 and entering the thin film transistor 14 .
これによって薄膜トランジスタ１４の特性が、光によっ
て劣化することが防がれる。こうして特にプロジェクシ
ョン用液晶表示装置２６の信頼性の向上を図ることがで
き、表示品位の高い液晶表示装置が実現される。This prevents the characteristics of the thin film transistor 14 from being degraded by light. In this way, the reliability of the projection liquid crystal display device 26 can be particularly improved, and a liquid crystal display device with high display quality can be realized.
遮光層２０の第１層２１の材料としては、前述のアルミ
ニウムの他に、銀Ａｇ、白金ｐｔおよびパラジウムＰｇ
なとであってもよい。また第２層２２の材料としては、
酸化クロムＣｒ２Ｏ３の他に、黒色染料によって透光性
合成樹脂を染色したものであってもよく、あるいはまた
顔料を透光性合成樹脂中に分散させた材料であってもよ
く、さらにまた金属酸化物であってもよい。この第２層
２２として用いられる金属酸化物としては、前述のクロ
ム酸化物０代わりに、Ｔｉ、Ｍｏ、Ｎｉ、Ｗ。In addition to the above-mentioned aluminum, materials for the first layer 21 of the light shielding layer 20 include silver Ag, platinum pt, and palladium Pg.
It may be . Moreover, the material of the second layer 22 is as follows:
In addition to chromium oxide Cr2O3, a transparent synthetic resin dyed with a black dye may be used, or a material in which a pigment is dispersed in a transparent synthetic resin may be used. It may be a thing. The metal oxides used for this second layer 22 include Ti, Mo, Ni, and W instead of the above-mentioned chromium oxide.
ＣＬＩ、Ａ／！ 、Ｆｅ、Ｔａなどの酸化物を用いるこ
とができる。CLI, A/! , Fe, Ta, and other oxides can be used.
第１層２１の反射率は約８０％以上であることが望まし
く、また第２層２２の反射率は３５％未満であることが
望ましい。The reflectance of the first layer 21 is preferably about 80% or more, and the reflectance of the second layer 22 is preferably less than 35%.
第２層２２として金属酸化物を用いる場き、その膜厚は
３００〜１５００人であり、黒色自戒樹脂を用いる場き
、その膜厚は０．５〜２．０μｍに選べばよい。When a metal oxide is used as the second layer 22, the thickness is 300 to 1500 μm, and when a black resin is used, the thickness is selected to be 0.5 to 2.0 μm.
上述の実施例では、基板１１．１２は透光性であるけれ
ども、一方の基板１１は遮光性であっていわゆる反射形
液晶表示装置を構成するようにしてもよい。In the above-described embodiment, the substrates 11 and 12 are light-transmitting, but one of the substrates 11 may be light-shielding and constitute a so-called reflective liquid crystal display device.
本発明によれば、遮光層２０は外方の表面、すなわち基
板１２側の表面で反射率は高く、その遮光層２０の内方
の表面すなわち液晶１３および基板１１側の表面で反射
率が低く構成されればよく、したがって上述の構成だけ
でなく、その他の変形が可能であり、これらの変形もま
た、本発明の精神に含まれる。薄膜トランジスタ１４に
代えて、その他の構成を有する半導体スイッチング素子
が用いられてもよい。According to the present invention, the outer surface of the light shielding layer 20, that is, the surface on the substrate 12 side, has a high reflectance, and the inner surface of the light shielding layer 20, that is, the surface on the liquid crystal 13 and substrate 11 side, has a low reflectance. Therefore, in addition to the above-described configuration, other modifications are possible, and these modifications are also included within the spirit of the invention. Instead of the thin film transistor 14, a semiconductor switching element having another configuration may be used.
発明の効果
以上のように本発明によれば、遮光層は、外方の表面で
反射率を高くしたので、外部からの光を吸収せず、した
がってその温度上昇が防止される。Effects of the Invention As described above, according to the present invention, the light-shielding layer has a high reflectance on its outer surface, so it does not absorb light from the outside, and therefore its temperature is prevented from rising.
したがって液晶および半導体スイッチング素子の温度の
上昇が抑制され、表示品位を向上することができ、特に
強い光が照射されるプロジェクション用液晶表示装置の
信頼性の向上を図ることができる。Therefore, the rise in temperature of the liquid crystal and semiconductor switching elements is suppressed, the display quality can be improved, and the reliability of a liquid crystal display device for projection, which is particularly irradiated with strong light, can be improved.
またこの遮光層の内方の表面は、反射率が低いので、外
部からの光がスイチッング素子および絵素電極が設けら
れた一方基板上で反射して遮光層に届いた多重反射光は
その遮光層で吸収される。In addition, the inner surface of this light-shielding layer has a low reflectance, so light from the outside is reflected on the substrate where switching elements and picture element electrodes are provided, and multiple reflected light that reaches the light-shielding layer is blocked by the light-shielding layer. Absorbed in layers.
したがってこの遮光層の内方の表面で光の反射を抑制し
て、半導体スイチッング素子に入射する光を減少させる
ことができる。これによって半導体スイチッング素子の
光による特性の劣化が防がれ、その半導体スイチッング
素子を安定に動作させることができる。これによって表
示品位の向上を図ることができる。Therefore, reflection of light can be suppressed on the inner surface of this light-shielding layer, thereby reducing the amount of light that enters the semiconductor switching element. This prevents deterioration of the characteristics of the semiconductor switching element due to light, and allows the semiconductor switching element to operate stably. This makes it possible to improve display quality.
第１図は本発明の一実施例の断面図、第２図は第１図に
示される液晶表示装置２６およびそれと同一の構成を有
する液晶表示装置２６ａ、２６ｂを用いるプロジェクシ
ョン装置２７の断面図、第３図は先行技術の断面図であ
る。FIG. 1 is a sectional view of an embodiment of the present invention, and FIG. 2 is a sectional view of a projection device 27 using the liquid crystal display device 26 shown in FIG. 1 and liquid crystal display devices 26a and 26b having the same configuration. FIG. 3 is a cross-sectional view of the prior art.
Claims (1)
して絵素電極に、一方電位を与え、他方の透光性基板上
に前記絵素電極に対応して形成した対向電極に他方電位
を与え、 両基板間に液晶が充填され、 前記他方基板上には、半導体スイッチング素子に対応し
て遮光層が配置される液晶表示装置において、 前記遮光層は、外方の表面で反射率が高く、内方の表面
で反射率が低く構成されることを特徴とする液晶表示装
置。[Claims] One potential is applied to a picture element electrode through a semiconductor switching element formed on one substrate, and a counter electrode is formed on the other transparent substrate corresponding to the picture element electrode. A liquid crystal display device in which a liquid crystal is filled between both substrates, and a light-shielding layer is disposed on the other substrate in correspondence with a semiconductor switching element, wherein the light-shielding layer is arranged on an outer surface of the liquid crystal display device. A liquid crystal display device characterized by having a high reflectance and an inner surface having a low reflectance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1126881A JPH02306222A (en) | 1989-05-20 | 1989-05-20 | Liquid crystal display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1126881A JPH02306222A (en) | 1989-05-20 | 1989-05-20 | Liquid crystal display device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02306222A true JPH02306222A (en) | 1990-12-19 |
Family
ID=14946155
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1126881A Pending JPH02306222A (en) | 1989-05-20 | 1989-05-20 | Liquid crystal display device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02306222A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0545643A (en) * | 1991-08-09 | 1993-02-26 | Sharp Corp | Active matrix display element |
| JPH0553148A (en) * | 1991-08-23 | 1993-03-05 | Nec Corp | Active matrix liquid crystal panel |
| US5592316A (en) * | 1992-09-08 | 1997-01-07 | U.S. Philips Corporation | Method of making an electro-optic display device with porous sub-layer |
| EP0762180A1 (en) * | 1995-07-31 | 1997-03-12 | Sony Corporation | Transmissive display device |
| US5666177A (en) * | 1996-02-26 | 1997-09-09 | Industrial Technology Research Institute | Black matrix for liquid crystal display |
| JP2009047822A (en) * | 2007-08-17 | 2009-03-05 | Epson Imaging Devices Corp | Liquid crystal display device and electronic equipment |
| WO2010026683A1 (en) * | 2008-09-08 | 2010-03-11 | シャープ株式会社 | Liquid crystal display panel |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02144525A (en) * | 1988-11-28 | 1990-06-04 | Toshiba Corp | Liquid crystal display device |
-
1989
- 1989-05-20 JP JP1126881A patent/JPH02306222A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02144525A (en) * | 1988-11-28 | 1990-06-04 | Toshiba Corp | Liquid crystal display device |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0545643A (en) * | 1991-08-09 | 1993-02-26 | Sharp Corp | Active matrix display element |
| JPH0553148A (en) * | 1991-08-23 | 1993-03-05 | Nec Corp | Active matrix liquid crystal panel |
| US5592316A (en) * | 1992-09-08 | 1997-01-07 | U.S. Philips Corporation | Method of making an electro-optic display device with porous sub-layer |
| US5689319A (en) * | 1992-09-08 | 1997-11-18 | U.S. Philips Corporation | Electro optic display device with porous sub-layer and method |
| EP0762180A1 (en) * | 1995-07-31 | 1997-03-12 | Sony Corporation | Transmissive display device |
| US5818552A (en) * | 1995-07-31 | 1998-10-06 | Sony Corporation | Transmissive display device having two reflection metallic layers of differing reflectances |
| US5666177A (en) * | 1996-02-26 | 1997-09-09 | Industrial Technology Research Institute | Black matrix for liquid crystal display |
| JP2009047822A (en) * | 2007-08-17 | 2009-03-05 | Epson Imaging Devices Corp | Liquid crystal display device and electronic equipment |
| WO2010026683A1 (en) * | 2008-09-08 | 2010-03-11 | シャープ株式会社 | Liquid crystal display panel |
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