JPH10228032A - Active matrix type liquid crystal display device - Google Patents

Active matrix type liquid crystal display device

Info

Publication number
JPH10228032A
JPH10228032A JP9031742A JP3174297A JPH10228032A JP H10228032 A JPH10228032 A JP H10228032A JP 9031742 A JP9031742 A JP 9031742A JP 3174297 A JP3174297 A JP 3174297A JP H10228032 A JPH10228032 A JP H10228032A
Authority
JP
Japan
Prior art keywords
common electrode
liquid crystal
array substrate
light
shielding member
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
JP9031742A
Other languages
Japanese (ja)
Inventor
Kohei Nagayama
耕平 永山
Yoshiharu Izuki
義治 伊月
Tomoko Kitazawa
倫子 北沢
Tetsuya Iizuka
哲也 飯塚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Development and Engineering Corp
Original Assignee
Toshiba Corp
Toshiba Electronic Engineering Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Electronic Engineering Co Ltd filed Critical Toshiba Corp
Priority to JP9031742A priority Critical patent/JPH10228032A/en
Publication of JPH10228032A publication Critical patent/JPH10228032A/en
Abandoned legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To improve the display quality by making a common electrode low in resistance and reducing reflected light from a light shield member, and preventing switching characteristics from decreasing and the voltage of the common electrode from varying. SOLUTION: While reflected light of a light shield film 24 is reduced by interposing an insulating film 46 between the light shield film 24 and common electrode 50 to prevent characteristics of a TFT 22 from decreasing owing to a light leak current, the coupling capacity between the light shield film 24 and common electrode 50 is increased and then the resistance value of the common electrode 50 is reduced by electrically connecting the light shield film 24 and common electrode 50 to each other at the peripheral part of a display area 'A' to prevent the potential of the common electrode 50 from varying owing to coupling with a signal line, thereby suppressing an uneven display due to crosstalk, etc.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、マトリクス状に配
列された薄膜トランジスタ(以下TFTと略称する。)
を駆動素子として備えたアクティブマトリクス基板及び
対向基板との間に、液晶組成物を保持して成るアクティ
ブマトリクス型液晶表示装置に関する。
The present invention relates to a thin film transistor (hereinafter abbreviated as TFT) arranged in a matrix.
The present invention relates to an active matrix type liquid crystal display device in which a liquid crystal composition is held between an active matrix substrate having a driving element and a counter substrate.

【0002】[0002]

【従来の技術】近年、高密度且つ大容量でありながら高
機能更には高精細を得るアクティブマトリク型の液晶表
示装置の実用化が図られている。
2. Description of the Related Art In recent years, an active matrix type liquid crystal display device which achieves high performance and high definition while having high density and large capacity has been put to practical use.

【0003】この様なアクティブマトリク型の液晶表示
装置のうち、TFTを制御素子として備えたアクティブ
マトリクス型の液晶表示装置にあっては、従来図6に示
す第1の従来例の様な構造のものがある。
Among such active matrix type liquid crystal display devices, an active matrix type liquid crystal display device having a TFT as a control element has a structure similar to the first conventional example shown in FIG. There is something.

【0004】即ち、アクティブマトリクス基板1は、ゲ
ート電極2a、ゲート絶縁膜2b、アモルファスシリコ
ン(以下a−Siと略称する。)層2c、リン(P)を
ドープしたn+ 型a−Si層2d、チャネル保護膜2
e、ソース電極2f及びドレイン電極2gからなるTF
T2及びIndium Tin Oxide(以下IT
Oと略称する。)からなる画素電極3を有するアレイ基
板4と、少なくともTFT2上方を被覆する所定のパタ
ーンを有する光遮蔽膜6及び着色層7並びに保護膜8を
介しこれ等の上面に形成されるITOからなる共通電極
10を有する対向基板11の間隙に液晶組成物12を保
持してなっている。
That is, the active matrix substrate 1 includes a gate electrode 2a, a gate insulating film 2b, an amorphous silicon (hereinafter abbreviated as a-Si) layer 2c, and an n + -type a-Si layer 2d doped with phosphorus (P). , Channel protective film 2
e, TF comprising source electrode 2f and drain electrode 2g
T2 and Indium Tin Oxide (hereinafter referred to as IT
Abbreviated as O. And an ITO substrate formed on the upper surface of the array substrate 4 having a predetermined pattern covering at least the upper part of the TFT 2 via a light shielding film 6 and a coloring layer 7 and a protective film 8. A liquid crystal composition 12 is held in a gap between a counter substrate 11 having an electrode 10.

【0005】しかしながらこの様なアクティブマトリク
ス基板1にあっては、画面の大型化に伴いITOからな
る共通電極10の抵抗値が大きくなり、時定数が増大
し、クロストーク等により表示品位が低下され所望の表
示を得られないという問題を生じていた。
However, in such an active matrix substrate 1, as the size of the screen increases, the resistance of the common electrode 10 made of ITO increases, the time constant increases, and the display quality deteriorates due to crosstalk and the like. There has been a problem that a desired display cannot be obtained.

【0006】このため、共通電極の抵抗値を低減し、ク
ロストークを低減する様、例えば特開昭63−9292
3号公報に開示される様な技術が開発されている。即
ち、図7の第2の従来例に示すように、対向基板13に
おいて、遮光膜14を、ITOより低い抵抗値の金属材
料等の導電性材料から形成する一方、遮光膜14上部の
着色層16及び保護層17の一部を除去し、共通電極1
8を遮光膜14と接触し、遮光膜14を介し共通電極1
8にバイアスを印加している。これにより、遮光膜14
と一体の共通電極18の抵抗値を低下し、クロストーク
等による不均一な表示を抑えている。
For this reason, the resistance value of the common electrode is reduced to reduce the crosstalk.
The technology disclosed in Japanese Patent Publication No. 3 (JP-A) No. 3 has been developed. That is, as shown in the second conventional example of FIG. 7, in the counter substrate 13, the light-shielding film 14 is formed from a conductive material such as a metal material having a lower resistance value than ITO, while the colored layer on the light-shielding film 14 is formed. 16 and a part of the protective layer 17 are removed, and the common electrode 1 is removed.
8 is in contact with the light-shielding film 14, and the common electrode 1 is
8 is applied with a bias. Thereby, the light shielding film 14
This reduces the resistance value of the common electrode 18 integrated with the above, thereby suppressing non-uniform display due to crosstalk or the like.

【0007】[0007]

【発明が解決しようとする課題】しかしながらこの様に
共通電極の抵抗値低減のために遮光膜と共通電極とを直
接接触させる構造にあっては、遮光膜と共通電極との界
面における光の反射率が高い事から、アレイ基板側から
入射した光がこの界面で反射されTFTに照射されてし
まい、TFTにリーク電流を生じ、スイッチング特性が
劣化され表示品位が低下されるという新たな問題を生じ
ていた。
However, in such a structure in which the light-shielding film and the common electrode are directly contacted in order to reduce the resistance value of the common electrode, reflection of light at the interface between the light-shielding film and the common electrode is performed. Due to the high efficiency, light incident from the array substrate side is reflected at this interface and irradiates the TFT, causing a leak current in the TFT, deteriorating switching characteristics and deteriorating display quality. I was

【0008】しかも、従来の構造にあっては、TFTに
画像情報を入力する信号線と共通電極との間に生じるカ
ップリングにより共通電極の電位が変動し、クロストー
ク等による表示不良を発生するという問題も有してい
た。
Moreover, in the conventional structure, the potential of the common electrode fluctuates due to the coupling generated between the signal line for inputting image information to the TFT and the common electrode, and a display defect such as crosstalk occurs. There was also a problem.

【0009】そこで本発明は上記課題を除去するもの
で、TFTを駆動素子とするアクティブマトリクス基板
において、クロストーク等による表示不良解消のため共
通電極の抵抗値低減を図るにもかかわらず、TFTのス
イッチング機能を劣化する事なく、さらには信号線との
カップリングによる共通電極の電圧変動も抑える事によ
り表示不良を防止し、表示品位の高いアクテイブマトリ
クス型液晶表示装置を提供する事を目的とする。
In view of the above, the present invention has been made in order to solve the above-mentioned problem. In an active matrix substrate using a TFT as a driving element, the resistance of a common electrode is reduced in order to eliminate a display defect due to crosstalk or the like. It is an object of the present invention to provide an active matrix type liquid crystal display device having a high display quality by preventing a display failure by suppressing a voltage fluctuation of a common electrode due to coupling with a signal line without deteriorating a switching function. .

【0010】[0010]

【課題を解決するための手段】本発明は上記課題を解決
する為の手段として、走査線及びこの走査線と交差する
よう配線される信号線との交点に配列されるスイッチン
グ素子に接続されマトリクス状に配置される画素電極か
らなる画素を有するアレイ基板と、少なくとも前記スイ
ッチング素子上方を被覆する導電性の遮光部材及び共通
電極を有し前記アレイ基板に間隙を隔てて対向配置され
る対向基板と、前記アレイ基板及び前記対向基板間に封
入される液晶組成物とを具備するアクティブマトリクス
型液晶表示装置において、前記共通電極及び前記遮光部
材が、前記アレイ基板のアクティブ領域内においては絶
縁部材を介して積層し、前記アクティブ領域周辺部にお
いては電気的に接続するものである。
According to the present invention, as a means for solving the above problems, a matrix connected to a switching element arranged at an intersection of a scanning line and a signal line wired so as to intersect the scanning line is provided. An array substrate having pixels composed of pixel electrodes arranged in a matrix, and a counter substrate having a conductive light-blocking member and a common electrode covering at least the upper part of the switching element and facing the array substrate with a gap therebetween. An active matrix type liquid crystal display device comprising a liquid crystal composition sealed between the array substrate and the opposing substrate, wherein the common electrode and the light blocking member are disposed in an active region of the array substrate via an insulating member. And electrically connect in the periphery of the active area.

【0011】又本発明は上記課題を解決するための手段
として、走査線及びこの走査線と交差するよう配線され
る信号線との交点に配列されるスイッチング素子に接続
されマトリクス状に配置される画素電極からなる画素を
有するアレイ基板と、絶縁部材により絶縁され少なくと
も前記スイッチング素子上方を被覆する導電性の遮光部
材及び、前記絶縁部材に絶縁される前記遮光部材上面に
て保護膜を介し前記マトリクス状に配置される画素電極
に共通に形成される共通電極を有し前記アレイ基板に間
隙を隔てて対向配置される対向基板と、前記アレイ基板
及び前記対向基板間に封入される液晶組成物とを具備す
るアクティブマトリクス型液晶表示装置において、前記
アレイ基板のアクティブ領域内において前記絶縁部材を
介し前記遮光部材上方に形成される前記保護膜の一部を
除去することにより、前記遮光部材及び前記共通電極が
前記絶縁部材を介し容量を形成して結合し、前記アレイ
基板のアクティブ領域周辺においては前記遮光部材上方
に形成される前記保護膜及び前記絶縁部材の一部を除去
することにより、前記遮光部材及び前記共通電極が電気
的に接続するものである。
According to the present invention, as a means for solving the above-mentioned problem, a scanning line and a switching element arranged at an intersection of a signal line intersecting the scanning line are arranged in a matrix. An array substrate having pixels composed of pixel electrodes, a conductive light-shielding member insulated by an insulating member and covering at least the upper part of the switching element, and the matrix via a protective film on an upper surface of the light-shielding member insulated by the insulating member A counter substrate having a common electrode formed in common with the pixel electrodes arranged in a matrix, and disposed opposite to the array substrate with a gap therebetween, and a liquid crystal composition sealed between the array substrate and the counter substrate. In the active matrix type liquid crystal display device comprising: the light shielding member via the insulating member in the active area of the array substrate By removing a part of the protective film formed on the other side, the light shielding member and the common electrode form a capacitor through the insulating member and are coupled to each other, and the light shielding member is formed around the active area of the array substrate. The light shielding member and the common electrode are electrically connected by removing a part of the protective film and the insulating member formed above.

【0012】又本発明は上記課題を解決するための手段
として、走査線及びこの走査線と交差するよう配線され
る信号線との交点に配列されるスイッチング素子に接続
されマトリクス状に配置される画素電極からなる画素を
有するアレイ基板と、少なくとも前記スイッチング素子
上方を被覆する導電性の遮光部材及び、前記画素電極に
対応する位置に設けられる着色部材並びに、共通電極を
有し前記アレイ基板に間隙を隔てて対向配置される対向
基板と、前記アレイ基板及び前記対向基板間に封入され
る液晶組成物とを具備するアクティブマトリクス型液晶
表示装置において、前記共通電極及び前記遮光部材が、
前記アレイ基板の表示領域内においては絶縁部材を介し
て積層し、前記表示領域周辺部においては電気的に接続
するものである。
According to the present invention, as a means for solving the above-mentioned problem, a scanning line and a switching element arranged at an intersection of a signal line intersecting the scanning line are arranged in a matrix. An array substrate having pixels composed of pixel electrodes, a conductive light-blocking member covering at least the upper part of the switching element, a coloring member provided at a position corresponding to the pixel electrode, and a gap between the array substrate having a common electrode In an active matrix type liquid crystal display device including a counter substrate disposed to face and a liquid crystal composition sealed between the array substrate and the counter substrate, the common electrode and the light blocking member are
In the display area of the array substrate, they are laminated via an insulating member, and are electrically connected around the display area.

【0013】又本発明は上記課題を解決するための手段
として、走査線及びこの走査線と交差するよう配線され
る信号線との交点に配列されるスイッチング素子に接続
されマトリクス状に配置される画素電極からなる画素を
有するアレイ基板と、絶縁部材により絶縁され少なくと
も前記スイッチング素子上方を被覆する導電性の遮光部
材及び、前記画素電極に対応する位置に設けられる着色
部材並びに、前記絶縁部材に絶縁される前記遮光部材上
面にて保護膜を介し前記画素電極に対応して形成される
共通電極を有し前記アレイ基板に間隙を隔てて対向配置
される対向基板と、前記アレイ基板及び前記対向基板間
に封入される液晶組成物とを具備するアクティブマトリ
クス型液晶表示装置において、前記アレイ基板のアクテ
ィブ領域内において前記絶縁部材を介し前記遮光部材上
方に形成される前記保護膜の一部を除去することによ
り、前記遮光部材及び前記共通電極が前記絶縁部材を介
し容量を形成して結合し、前記アレイ基板のアクティブ
領域周辺においては前記遮光部材上方に形成される前記
保護膜及び前記絶縁部材の一部を除去することにより前
記遮光部材及び前記共通電極が電気的に接続するもので
ある。
According to the present invention, as a means for solving the above-mentioned problems, a scanning line and a switching element arranged at an intersection of a signal line intersecting with the scanning line are connected and arranged in a matrix. An array substrate having pixels formed of pixel electrodes, a conductive light-blocking member insulated by an insulating member and covering at least the upper side of the switching element, a coloring member provided at a position corresponding to the pixel electrode, and insulating to the insulating member A counter substrate having a common electrode formed on the upper surface of the light shielding member corresponding to the pixel electrode via a protective film, the counter substrate being opposed to the array substrate with a gap therebetween, and the array substrate and the counter substrate An active matrix type liquid crystal display device comprising a liquid crystal composition enclosed between the active region and the active region of the array substrate. By removing a part of the protective film formed above the light-shielding member via the insulating member, the light-shielding member and the common electrode form a capacitor via the insulating member and are coupled to each other, and Around the active area, the light shielding member and the common electrode are electrically connected by removing a part of the protective film and the insulating member formed above the light shielding member.

【0014】そしてこの様な構成により本発明は、遮光
部材及び共通電極間に絶縁部材を介在し、アレイ基板側
から入射された光を絶縁部材にて散乱させる事により、
遮光部材表面からの反射光によるTFTの光リーク電流
を低減すると共に、アクティブ領域周辺部にて共通電極
及び遮光部材を導通し共通電極の抵抗値の低減による共
通電極の時定数を低減によりクロストークを抑えると共
に、絶縁部材を介する事により共通電極と遮光部材の結
合容量を増大し、信号線と共通電極間のカップリングに
よる共通電極の電位変動を低減し、クロストーク等によ
る表示不良の発生を防止し、表示品位の向上を図るもの
である。
According to the present invention, an insulating member is interposed between the light shielding member and the common electrode, and light incident from the array substrate is scattered by the insulating member.
The light leakage current of the TFT due to the light reflected from the surface of the light shielding member is reduced, and the common electrode and the light shielding member are conducted around the active area to reduce the resistance value of the common electrode, thereby reducing the time constant of the common electrode to reduce crosstalk. In addition, the coupling capacitance between the common electrode and the light-shielding member is increased by interposing the insulating member, the potential fluctuation of the common electrode due to the coupling between the signal line and the common electrode is reduced, and the occurrence of display failure due to crosstalk or the like is reduced. This is intended to prevent the display quality and improve the display quality.

【0015】[0015]

【発明の実施の形態】以下、本発明の第1の実施の形態
を図1乃至図4を参照して説明する。20は、アクティ
ブマトリクス型の液晶表示装置であり、マトリクス状に
配列されるITOからなる画素電極21のスイッチング
素子としてTFT22を用いるアレイ基板23及び、遮
光部材である所定のパターンを有する遮光膜24が形成
され、画素電極21やTFT22の位置に合わせてスト
ライプ状又はマトリクス状に赤(R)、緑(G)、青
(B)の着色層26が形成された上にITOからなる共
通電極を有する対向基板27の間に、液晶組成物28を
挾持してなっている。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a first embodiment of the present invention will be described with reference to FIGS. An active matrix type liquid crystal display device 20 includes an array substrate 23 using a TFT 22 as a switching element of a pixel electrode 21 made of ITO arranged in a matrix, and a light shielding film 24 having a predetermined pattern as a light shielding member. A red (R), green (G), and blue (B) colored layer 26 is formed in a stripe or matrix in accordance with the positions of the pixel electrodes 21 and the TFTs 22, and a common electrode made of ITO is provided. A liquid crystal composition 28 is sandwiched between the opposing substrates 27.

【0016】ここでアレイ基板23は、透明なガラスか
らなる絶縁基板30上に、タンタル(Ta)、モリブデ
ン(Mo)、クロム(Cr)、等の金属材料をスパッタ
リング法で堆積して成り、走査信号を供給する走査線Y
j(j=1,2,3,…)と一体的に形成されるゲート
電極31上には、酸化シリコン(SiOx)からなるゲ
ート絶縁膜32をプラズマCVD法等により被覆し、こ
のゲート絶縁膜32を介したゲート電極31上方には、
CVD法によりa−Si層33及び、チャネル保護膜3
4を介し、良好なオーミックコンタクトを得るためリン
(P)イオンをドーピングして成るn+ 型a−Si層か
らなるソース領域36、ドレイン領域37をパターン形
成し、ソース領域36上には画素電極21に接続される
ソース電極38を形成し、ドレイン領域37上には表示
信号を供給する信号線Xi(i=1,2,3,…)と一
体のドレイン電極40からなるTFT22を形成してい
る。更に画素電極21及びTFT22上面を、窒化シリ
コン(SiNx)等からなる保護膜41にて被覆してい
る。
Here, the array substrate 23 is formed by depositing a metal material such as tantalum (Ta), molybdenum (Mo), chromium (Cr), etc. on an insulating substrate 30 made of transparent glass by sputtering. Scan line Y for supplying signal
A gate insulating film 32 made of silicon oxide (SiOx) is coated on the gate electrode 31 formed integrally with j (j = 1, 2, 3,...) by a plasma CVD method or the like. Above the gate electrode 31 via
A-Si layer 33 and channel protective film 3 by CVD
4, a source region 36 and a drain region 37 made of an n + -type a-Si layer doped with phosphorus (P) ions to obtain a good ohmic contact are patterned, and a pixel electrode is formed on the source region 36. A source electrode 38 connected to the TFT 21 is formed, and a TFT 22 including a drain electrode 40 integrated with a signal line Xi (i = 1, 2, 3,...) For supplying a display signal is formed on the drain region 37. I have. Further, the upper surfaces of the pixel electrodes 21 and the TFTs 22 are covered with a protective film 41 made of silicon nitride (SiNx) or the like.

【0017】一方対向基板27は、透明なガラスからな
る絶縁基板42上にモリブデン(Mo)、タンタル(T
a)、クロム(Cr)等の金属をスパッタリング法で堆
積し、この後、フォトリソグラフィ及びエッチングによ
り図1に示す様にブラックマトリクス状の遮光膜24を
パターン形成し、次に陽極酸化等の方法で遮光膜24表
面を酸化して絶縁膜46を形成する。更にアクティブ領
域周辺部である対向基板27上の表示領域[A]の周辺
部においては、遮光膜24上の絶縁膜46を除去した
後、画素電極21に対応する位置に、電着法等により、
赤(R)、緑(G)、青(B)の着色層26を形成し、
スルーホール48位置における着色層26を除去した上
面に酸化シリコンからなる保護膜47を堆積する。
On the other hand, the opposing substrate 27 is formed by molybdenum (Mo) and tantalum (T) on an insulating substrate 42 made of transparent glass.
a), a metal such as chromium (Cr) is deposited by a sputtering method, and thereafter, a light shielding film 24 in the form of a black matrix is patterned by photolithography and etching as shown in FIG. The surface of the light-shielding film 24 is oxidized to form an insulating film 46. Further, in the peripheral portion of the display region [A] on the counter substrate 27 which is the peripheral portion of the active region, after removing the insulating film 46 on the light shielding film 24, the portion corresponding to the pixel electrode 21 is placed by an electrodeposition method or the like. ,
Forming red (R), green (G), and blue (B) colored layers 26;
A protective film 47 made of silicon oxide is deposited on the upper surface of the through hole 48 where the coloring layer 26 has been removed.

【0018】この後、遮光膜24上面の保護膜47をエ
ッチング等により除去してスルーホール48を形成した
後、画素電極21に対向するITOからなる共通電極5
0を成膜し、更に窒化シリコン(SiNx)からなる保
護膜51を被覆する。これにより、表示領域[A]にあ
っては、スルーホール48において共通電極50及び遮
光膜24の間に絶縁膜46が介在される一方、表示領域
[A]の周辺部では共通電極50及び遮光膜24は直接
接触され電気的に導通される。更に共通電極50は、表
示領域[A]周辺部にて、有機導電材料60と共通電極
電圧給電用電極であるパッド61を介して交流電源(図
示せず)に接続されている。
Thereafter, the protective film 47 on the upper surface of the light-shielding film 24 is removed by etching or the like to form a through-hole 48, and then the common electrode 5 made of ITO opposed to the pixel electrode 21 is formed.
No. 0 is formed, and a protective film 51 made of silicon nitride (SiNx) is further covered. Thus, in the display area [A], the insulating film 46 is interposed between the common electrode 50 and the light-shielding film 24 in the through hole 48, while the common electrode 50 and the light-shielding light are shielded in the periphery of the display area [A]. The membrane 24 is in direct contact and is electrically conductive. Further, the common electrode 50 is connected to an AC power supply (not shown) via an organic conductive material 60 and a pad 61 serving as a common electrode voltage power supply electrode in the periphery of the display area [A].

【0019】このようにして成るアレイ基板23及び対
向基板27の画素電極21側及び共通電極50側全面に
ポリイミドからなる配向膜53、54を印刷塗布し、ラ
ビング処理をした後、両基板23、27を対向して組み
立て、セル化し、その間隙に液晶組成物28を注入し封
止する。そして両基板23、27の絶縁基板30、42
側に偏光板57、58を取着して液晶表示装置20とす
る。
After the alignment films 53 and 54 made of polyimide are applied to the entire surface of the array substrate 23 and the counter substrate 27 on the pixel electrode 21 side and the common electrode 50 side by printing and rubbing, the two substrates 23 and 27 are assembled facing each other to form a cell, and a liquid crystal composition 28 is injected into the gap and sealed. Then, the insulating substrates 30, 42 of the two substrates 23, 27
The polarizing plates 57 and 58 are attached to the sides to complete the liquid crystal display device 20.

【0020】この液晶表示装置20にあっては、アレイ
基板23側から遮光膜24に入射した光は、遮光膜24
表面に形成される絶縁膜46の表面で散乱されるので、
遮光膜24からTFT22に入射される表面反射光が低
減され、TFT22は光リーク電流の発生を低減でき
る。これと共に、共通電極50は、表示領域[A]の周
辺部において、抵抗値の低い金属材料からなる遮光膜2
4と導通され、従来に比し抵抗値が低減される事から、
時定数を低減できクロストークが抑えられる。
In the liquid crystal display device 20, light incident on the light shielding film 24 from the array substrate 23 side is
Since it is scattered on the surface of the insulating film 46 formed on the surface,
The surface reflected light incident on the TFT 22 from the light shielding film 24 is reduced, and the TFT 22 can reduce the occurrence of light leakage current. At the same time, the common electrode 50 is formed around the light-shielding film 2 made of a metal material having a low resistance value in the peripheral portion of the display area [A].
4 and the resistance value is reduced compared to the conventional one.
The time constant can be reduced and crosstalk can be suppressed.

【0021】一方、この液晶表示装置20を等価回路で
示すと図4に示す様になり、画素電極21は、TFT2
2のソース電極38に接続されており、TFT22のゲ
ート電極31は走査線Yjに接続され、ドレイン電極4
0は信号線Xiに接続されている。更に液晶組成物28
を挾持する画素電極21及び共通電極50間には容量C
lcが形成され、絶縁膜46を介して共通電極50及び遮
光膜24との間には結合容量Cthが形成されている。
On the other hand, the equivalent circuit of the liquid crystal display device 20 is as shown in FIG.
2 is connected to the source electrode 38, the gate electrode 31 of the TFT 22 is connected to the scanning line Yj, and the drain electrode 4
0 is connected to the signal line Xi. Further, the liquid crystal composition 28
Between the pixel electrode 21 and the common electrode 50 sandwiching
lc is formed, and a coupling capacitance Cth is formed between the common electrode 50 and the light shielding film 24 via the insulating film 46.

【0022】又表示領域[A]にあっては、共通電極5
0は抵抗RITO(i,j)で繋がれており、遮光膜24は抵抗
BM(i,j) で繋がれる一方、表示領域[A]の周辺部に
あっては、共通電極50及び遮光膜24は導通され、遮
光膜24及び共通電極50にはパッド61及び有機導電
材料60を介して交流電圧Vcom が印加される。
In the display area [A], the common electrode 5
0 is connected by a resistor R ITO (i, j) , and the light-shielding film 24 is connected by a resistor R BM (i, j) , while the common electrode 50 and The light-shielding film 24 is conducted, and an AC voltage Vcom is applied to the light-shielding film 24 and the common electrode 50 via the pad 61 and the organic conductive material 60.

【0023】この様な等価回路を有する液晶表示装置2
0においては、信号線Xiと共通電極50との間には寄
生容量が形成されており、信号線Xiに入力される表示
信号の変化により共通電極50の電位が変動するが、こ
の電位の変動を図4点線で示す領域[B]で見ると、各
画素電極21の両隣の信号線Xiに入力される表示信号
の変化に最も大きく影響される。即ち、信号線Xi+1 と
共通電極50間の容量をCsig1、信号線Xi+2 と共通電
極50間の容量をCsig2とすると、領域[B]の共通電
極50の電位変動量ΔVcom は数1のように表される。
The liquid crystal display device 2 having such an equivalent circuit
At 0, a parasitic capacitance is formed between the signal line Xi and the common electrode 50, and the potential of the common electrode 50 fluctuates due to a change in the display signal input to the signal line Xi. When viewed in a region [B] shown by a dotted line in FIG. 4, the change is most greatly affected by a change in a display signal input to the signal lines Xi on both sides of each pixel electrode 21. That is, assuming that the capacitance between the signal line Xi + 1 and the common electrode 50 is Csig1 and the capacitance between the signal line Xi + 2 and the common electrode 50 is Csig2, the potential variation ΔVcom of the common electrode 50 in the region [B] is It is represented as

【0024】[0024]

【数1】 この数1において、共通電極の電位変動量ΔVcom は結
合容量Cthに依存しており、結合容量Cthが大きいほど
電位変動量ΔVcom は小さくなるが、液晶表示装置20
にあっては、遮光膜24上の保護膜47が除去され、絶
縁膜46を介し低抵抗の遮光膜24と共通電極50とが
大きな容量で結合しており、共通電極50に交流電圧V
com を印加した場合に、従来の共通電極のみに交流電圧
を印加した場合に比し、共通電極電位波形の歪みが小さ
くなる。尚、遮光膜24と共通電極50の結合容量を十
分大きくするに従い、信号線Xiと共通電極50間のカ
ップリングによる共通電極50の電位変動はより小さく
成り、例えば、画素電極21の大きさが180μm×6
0μm、スルーホール48の面積が6500μm2、酸
化シリコン(SiO2 )の絶縁膜46の膜厚が1500
オングストローム、モリブデンタンタル(MoTa)か
らなる遮光膜24のシート抵抗1.2Q/□、ITOか
らなる共通電極50の抵抗率が1.5×10-4Ωcm、膜
厚が1500オングストロームとすると、共通電極電位
波形の歪みは従来と比べて約1/2に低減し、信号線X
iと共通電極50間のカップリングによる共通電極50
の電位変動量は約1/6に低減する。
(Equation 1) In the equation (1), the potential variation ΔVcom of the common electrode depends on the coupling capacitance Cth, and the potential variation ΔVcom decreases as the coupling capacitance Cth increases.
In this case, the protective film 47 on the light-shielding film 24 is removed, the low-resistance light-shielding film 24 and the common electrode 50 are coupled with a large capacitance via the insulating film 46, and the AC voltage V is applied to the common electrode 50.
When com is applied, the distortion of the common electrode potential waveform is smaller than in the case where the AC voltage is applied only to the conventional common electrode. Note that as the coupling capacitance between the light-shielding film 24 and the common electrode 50 is sufficiently increased, the potential fluctuation of the common electrode 50 due to the coupling between the signal line Xi and the common electrode 50 becomes smaller. For example, the size of the pixel electrode 21 becomes smaller. 180 μm × 6
0 μm, the area of the through hole 48 is 6500 μm 2 , and the thickness of the insulating film 46 of silicon oxide (SiO 2 ) is 1500
If the sheet resistance of the light-shielding film 24 made of molybdenum tantalum (MoTa) is 1.2 Q / □, the resistivity of the common electrode 50 made of ITO is 1.5 × 10 −4 Ωcm, and the film thickness is 1500 Å, the common electrode The distortion of the potential waveform is reduced to about 1 / compared with the related art, and the signal line X
Common electrode 50 by coupling between i and common electrode 50
Is reduced to about 1/6.

【0025】この様に構成すれば、遮光膜24上に絶縁
膜46が形成される事から、アレイ基板23側から入射
した光は遮光膜24表面で散乱するため、TFT22に
入射される遮光膜24表面からの反射光が低減され、T
FT22における光リーク電流の発生を抑える事がで
き、TFT22のスイッチング特性を向上でき、表示品
位を向上できる。又、遮光膜24がITOからなる共通
電極より抵抗の低い金属材料から形成されており、これ
と導通することにより共通電極50の抵抗が低減される
事から、共通電極50の時定数を低減でき、クロストー
ク等の防止により表示品位を向上できる。しかも保護膜
47が除去されるスルーホール48にて、共通電極50
と遮光膜24との間に絶縁膜46を介在する事により共
通電極50及び遮光膜24間の結合容量を従来に比し増
大でき、ひいては信号線Xiとのカップリングによる共
通電極50の電位変動を低減できる事からもクロストー
ク等による表示不良の防止により表示品位を向上でき
る。
With this configuration, since the insulating film 46 is formed on the light-shielding film 24, the light incident from the array substrate 23 is scattered on the surface of the light-shielding film 24. 24, the reflected light from the surface is reduced.
The occurrence of light leakage current in the FT 22 can be suppressed, the switching characteristics of the TFT 22 can be improved, and the display quality can be improved. Further, since the light-shielding film 24 is formed of a metal material having a lower resistance than the common electrode made of ITO, the resistance of the common electrode 50 is reduced by conducting with this, so that the time constant of the common electrode 50 can be reduced. The display quality can be improved by preventing crosstalk and the like. Moreover, the common electrode 50 is formed in the through hole 48 from which the protective film 47 is removed.
By interposing an insulating film 46 between the common electrode 50 and the light-shielding film 24, the coupling capacitance between the common electrode 50 and the light-shielding film 24 can be increased as compared with the conventional case, and the potential fluctuation of the common electrode 50 due to coupling with the signal line Xi Therefore, the display quality can be improved by preventing display defects due to crosstalk and the like.

【0026】次に本発明の第2の実施の形態を図5を参
照して説明する。尚本実施の形態は、第1の実施の形態
におけるスルーホールにおける保護膜の除去領域を拡大
し、遮光膜上にて共通電極が着色層及び保護膜とに段状
に接触する構造としたものであり、他は第1の実施の形
態と同一であることから同一部分については同一符号を
付しその説明を省略する。
Next, a second embodiment of the present invention will be described with reference to FIG. In this embodiment, the region where the protective film is removed in the through hole in the first embodiment is enlarged, and the common electrode is in a stepped contact with the colored layer and the protective film on the light shielding film. The other parts are the same as those of the first embodiment, so the same parts are denoted by the same reference numerals and description thereof will be omitted.

【0027】即ち、アレイ基板23に対向される対向基
板66を、絶縁基板42上にパターン形成される遮光膜
24表面を陽極酸化して絶縁膜46を形成する一方、表
示領域[A]の周辺部における遮光膜24上の絶縁膜4
6を除去した後、着色層67を形成し、その上面に保護
膜68を堆積し、更にスルーホール70を形成した後、
共通電極50を成膜する際、着色層67の除去領域に比
し保護膜68の除去領域の広いスルーホール70を形成
し、共通電極50が遮光膜24上で着色層67及び保護
膜68に段状に接触するようにしたものである。
That is, the surface of the light-shielding film 24 patterned on the insulating substrate 42 is anodized to form the insulating film 46 on the counter substrate 66 facing the array substrate 23, while the periphery of the display area [A] is formed. Insulating film 4 on light-shielding film 24 in section
After removing 6, a colored layer 67 is formed, a protective film 68 is deposited on its upper surface, and a through hole 70 is further formed.
When the common electrode 50 is formed, a through hole 70 having a larger area where the protective film 68 is removed than the area where the colored layer 67 is removed is formed, and the common electrode 50 is formed on the light-shielding film 24 as the colored layer 67 and the protective film 68. The contact is made in a stepped manner.

【0028】この様に構成すれば、第1の実施の形態と
同様、光学的には遮光膜24表面からTFT22に入射
される反射光が低減され、光リーク電流の低減により表
示品位を向上できる。又、電気的には共通電極50の抵
抗値の低下による時定数の低下によりクロストーク等に
よる表示不良を防止できると共に、スルーホール70に
て、絶縁膜46を介する事により共通電極50と遮光膜
24との結合容量を増大でき、信号線Xiとのカップリ
ングによる共通電極50の電位変動の低減により、クロ
ストーク等による表示不良を防止でき、表示品位を向上
できるという効果を得られる。更にスルーホール70が
着色層67上及び保護膜68上にて段状に形成され、遮
光膜24上に成膜される共通電極50の傾斜が全体とし
て緩やかである事から、第1の実施の形態に比し、配向
膜54をラビング処理する際、全面をより均一にラビン
グ処理でき、より良好な配光特性を得られる。
With this configuration, similarly to the first embodiment, optically, the reflected light incident on the TFT 22 from the surface of the light shielding film 24 is reduced, and the display quality can be improved by reducing the light leakage current. . In addition, it is possible to electrically prevent a display defect such as crosstalk from occurring due to a decrease in the time constant due to a decrease in the resistance value of the common electrode 50, and to establish a connection between the common electrode 50 and the light shielding film through the insulating film 46 in the through hole 70. 24 can be increased, and the potential fluctuation of the common electrode 50 due to the coupling with the signal line Xi can be reduced, so that a display failure due to crosstalk or the like can be prevented, and the display quality can be improved. Further, the through holes 70 are formed in steps on the coloring layer 67 and the protective film 68, and the common electrode 50 formed on the light-shielding film 24 has a gentle slope as a whole. Compared with the embodiment, when rubbing the alignment film 54, the entire surface can be rubbed more uniformly, and better light distribution characteristics can be obtained.

【0029】尚本発明は上記実施の形態に限られるもの
でなく、その趣旨を変えない範囲での変更は可能であっ
て、例えば共通電極及び光遮光部材間に介在される絶縁
部材の形成方法は、陽極酸化法に限られること無く、酸
化クロム(CrO)、二酸化クロム(Cr2 O)、二酸
化シリコン(SiO2 )、酸化タンタル(Ta
2 5)、四窒化シリコン(Si3 4 )等をプラズマ
CVD法、スパッタ法、電子ビーム蒸着法等により形成
しても良い。又、スルーホールの大きさ等も任意である
し、共通電極と遮光部材間の結合容量の大きさも任意で
あるが結合容量を大きくするに従い、信号線とのカップ
リングによる共通電極の電位の変動はより小さくされ
る。
The present invention is not limited to the above embodiment, but can be modified without departing from the spirit thereof. For example, a method of forming an insulating member interposed between a common electrode and a light shielding member It is not limited to the anodic oxidation, chromium oxide (CrO), chromium dioxide (Cr 2 O), silicon dioxide (SiO 2), tantalum oxide (Ta
2 O 5 ), silicon tetranitride (Si 3 N 4 ), or the like may be formed by a plasma CVD method, a sputtering method, an electron beam evaporation method, or the like. In addition, the size of the through hole is arbitrary, and the coupling capacitance between the common electrode and the light shielding member is also arbitrary. However, as the coupling capacitance is increased, the potential of the common electrode fluctuates due to coupling with the signal line. Is made smaller.

【0030】[0030]

【発明の効果】以上説明したように本発明によれば、共
通電極及び遮光部材の間に絶縁部材を介在させる事によ
り、絶縁部材表面にて入射光を散乱させ、遮光部材表面
での入射光の反射を防止でき、従来に比しスイッチング
素子に入射される遮光部材からの反射光を低減でき、光
リーク電流の低減によりスイッチング素子の特性向上を
図れより良好な表示品位を得られる。又、共通電極は、
周辺部にて抵抗値の低い光遮光部材に導通されその抵抗
値が低下され時定数が低減される事から、クロストーク
等による不均一な表示を防止できる。しかも、絶縁部材
を介する事により共通電極と遮光部材との結合容量が増
大される事から、信号線とのカップリングによる共通電
極の電位変動を低減でき、クロストーク等による不均一
な表示を防止できる事からも、良好な表示品位を得られ
る。
As described above, according to the present invention, by interposing an insulating member between the common electrode and the light shielding member, the incident light is scattered on the surface of the insulating member, and the incident light on the surface of the light shielding member is scattered. Can be prevented, the reflected light from the light-shielding member incident on the switching element can be reduced as compared with the related art, and the characteristics of the switching element can be improved by reducing the light leakage current, so that better display quality can be obtained. Also, the common electrode is
Since the light shielding member having a low resistance value is conducted in the peripheral portion to reduce the resistance value and reduce the time constant, it is possible to prevent uneven display due to crosstalk or the like. Moreover, since the coupling capacity between the common electrode and the light shielding member is increased by interposing the insulating member, the fluctuation of the potential of the common electrode due to the coupling with the signal line can be reduced, and non-uniform display due to crosstalk or the like can be prevented. Good display quality can be obtained from what can be done.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の第1の実施の形態の対向基板を示す概
略説明図である。
FIG. 1 is a schematic explanatory view showing a counter substrate according to a first embodiment of the present invention.

【図2】本発明の第1の実施の形態の液晶表示装置を示
し、図1のA−A´線に相当する位置における概略断面
図である。
FIG. 2 is a schematic cross-sectional view illustrating the liquid crystal display device according to the first embodiment of the present invention at a position corresponding to line AA ′ in FIG.

【図3】本発明の第1の実施の形態の液晶表示装置を示
し、図1のB−B´線に相当する位置における概略断面
図である。
FIG. 3 is a schematic cross-sectional view illustrating the liquid crystal display device according to the first embodiment of the present invention at a position corresponding to line BB ′ in FIG.

【図4】本発明の第1の実施の形態の液晶表示装置の構
成を示す一部等価回路図である。
FIG. 4 is a partial equivalent circuit diagram illustrating a configuration of the liquid crystal display device according to the first embodiment of the present invention.

【図5】本発明の第2の実施の形態の液晶表示装置を示
し、図1のA−A´線に相当する位置における概略断面
図である。
FIG. 5 is a schematic cross-sectional view illustrating a liquid crystal display device according to a second embodiment of the present invention at a position corresponding to line AA ′ in FIG.

【図6】第1の従来例の液晶表示装置を示す一部概略断
面図である。
FIG. 6 is a partial schematic cross-sectional view showing a first conventional liquid crystal display device.

【図7】第2の従来例の液晶表示装置を示す一部概略断
面図である。
FIG. 7 is a partial schematic cross-sectional view showing a second conventional liquid crystal display device.

【符号の説明】[Explanation of symbols]

20…液晶表示装置 21…画素電極 22…TFT 23…アレイ基板 24…遮光膜 26…着色層 27…対向基板 28…液晶組成物 46…絶縁膜 47…保護膜 48…スルーホール 50…共通電極 53、54…配向膜 60…有機導電材料 61…パッド Reference Signs List 20 liquid crystal display device 21 pixel electrode 22 TFT 23 array substrate 24 light-shielding film 26 coloring layer 27 counter substrate 28 liquid crystal composition 46 insulating film 47 protective film 48 through hole 50 common electrode 53 , 54 ... Orientation film 60 ... Organic conductive material 61 ... Pad

───────────────────────────────────────────────────── フロントページの続き (72)発明者 北沢 倫子 神奈川県横浜市磯子区新杉田町8番地 株 式会社東芝横浜事業所内 (72)発明者 飯塚 哲也 神奈川県川崎市川崎区日進町7番地1 東 芝電子エンジニアリング株式会社内 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Rinko Kitazawa 8 Shinsugita-cho, Isogo-ku, Yokohama-shi, Kanagawa Prefecture Inside the Toshiba Yokohama Office (72) Inventor Tetsuya Iizuka 7-1-1 Nisshincho, Kawasaki-ku, Kawasaki-shi, Kanagawa Shiba Electronics Engineering Co., Ltd.

Claims (7)

【特許請求の範囲】[Claims] 【請求項1】 走査線及びこの走査線と交差するよう配
線される信号線との交点に配列されるスイッチング素子
に接続されマトリクス状に配置される画素電極からなる
画素を有するアレイ基板と、少なくとも前記スイッチン
グ素子上方を被覆する導電性の遮光部材及び共通電極を
有し前記アレイ基板に間隙を隔てて対向配置される対向
基板と、前記アレイ基板及び前記対向基板間に封入され
る液晶組成物とを具備するアクティブマトリクス型液晶
表示装置において、 前記共通電極及び前記遮光部材が、前記アレイ基板のア
クティブ領域内においては絶縁部材を介して積層し、前
記アクティブ領域周辺部においては電気的に接続する事
を特徴とするアクティブマトリクス型液晶表示装置。
1. An array substrate having pixels including pixel electrodes arranged in a matrix and connected to switching elements arranged at intersections of scanning lines and signal lines wired to intersect the scanning lines, and A counter substrate having a conductive light-blocking member and a common electrode covering the upper side of the switching element and facing the array substrate with a gap therebetween; and a liquid crystal composition sealed between the array substrate and the counter substrate. Wherein the common electrode and the light shielding member are laminated via an insulating member in an active region of the array substrate, and are electrically connected in a periphery of the active region. An active matrix type liquid crystal display device characterized by the above-mentioned.
【請求項2】 走査線及びこの走査線と交差するよう配
線される信号線との交点に配列されるスイッチング素子
に接続されマトリクス状に配置される画素電極からなる
画素を有するアレイ基板と、絶縁部材により絶縁され少
なくとも前記スイッチング素子上方を被覆する導電性の
遮光部材及び、前記絶縁部材に絶縁される前記遮光部材
上面にて保護膜を介し前記マトリクス状に配置される画
素電極に共通に形成される共通電極を有し前記アレイ基
板に間隙を隔てて対向配置される対向基板と、前記アレ
イ基板及び前記対向基板間に封入される液晶組成物とを
具備するアクティブマトリクス型液晶表示装置におい
て、 前記アレイ基板のアクティブ領域内において前記絶縁部
材を介し前記遮光部材上方に形成される前記保護膜の一
部を除去することにより、前記遮光部材及び前記共通電
極が前記絶縁部材を介し容量を形成して結合し、前記ア
レイ基板のアクティブ領域周辺においては前記遮光部材
上方に形成される前記保護膜及び前記絶縁部材の一部を
除去することにより、前記遮光部材及び前記共通電極が
電気的に接続する事を特徴とするアクティブマトリクス
型液晶表示装置。
2. An insulating substrate, comprising: an array substrate having pixels formed of pixel electrodes arranged in a matrix connected to switching elements arranged at intersections of scanning lines and signal lines arranged to intersect the scanning lines; A conductive light-shielding member insulated by a member and covering at least an upper portion of the switching element; and a common light-shielding member formed on the upper surface of the light-shielding member insulated by the insulating member and interposed between the pixel electrodes arranged in a matrix through a protective film. An active matrix type liquid crystal display device comprising: a counter substrate having a common electrode and disposed opposite to the array substrate with a gap therebetween; and a liquid crystal composition sealed between the array substrate and the counter substrate. Removing a part of the protective film formed above the light shielding member via the insulating member in the active area of the array substrate; Accordingly, the light shielding member and the common electrode form a capacitor via the insulating member and are coupled to each other, and a portion of the protection film and the insulating member formed above the light shielding member around an active area of the array substrate. The active matrix type liquid crystal display device characterized in that the light shielding member and the common electrode are electrically connected by removing the liquid crystal.
【請求項3】 走査線及びこの走査線と交差するよう配
線される信号線との交点に配列されるスイッチング素子
に接続されマトリクス状に配置される画素電極からなる
画素を有するアレイ基板と、少なくとも前記スイッチン
グ素子上方を被覆する導電性の遮光部材及び、前記画素
電極に対応する位置に設けられる着色部材並びに、共通
電極を有し前記アレイ基板に間隙を隔てて対向配置され
る対向基板と、前記アレイ基板及び前記対向基板間に封
入される液晶組成物とを具備するアクティブマトリクス
型液晶表示装置において、前記共通電極及び前記遮光部
材が、前記アレイ基板の表示領域内においては絶縁部材
を介して積層し、前記表示領域周辺部においては電気的
に接続する事を特徴とするアクティブマトリクス型液晶
表示装置。
3. An array substrate having pixels consisting of pixel electrodes arranged in a matrix and connected to switching elements arranged at intersections of scanning lines and signal lines arranged to intersect the scanning lines, and A conductive light-shielding member that covers the upper side of the switching element, a coloring member provided at a position corresponding to the pixel electrode, and a counter substrate having a common electrode and facing the array substrate with a gap therebetween, In an active matrix type liquid crystal display device including a liquid crystal composition sealed between an array substrate and the counter substrate, the common electrode and the light blocking member are stacked via an insulating member in a display region of the array substrate. An active matrix type liquid crystal display device is characterized in that electrical connection is made around the display area.
【請求項4】 走査線及びこの走査線と交差するよう配
線される信号線との交点に配列されるスイッチング素子
に接続されマトリクス状に配置される画素電極からなる
画素を有するアレイ基板と、絶縁部材により絶縁され少
なくとも前記スイッチング素子上方を被覆する導電性の
遮光部材及び、前記画素電極に対応する位置に設けられ
る着色部材並びに、前記絶縁部材に絶縁される前記遮光
部材上面にて保護膜を介し前記画素電極に対応して形成
される共通電極を有し前記アレイ基板に間隙を隔てて対
向配置される対向基板と、前記アレイ基板及び前記対向
基板間に封入される液晶組成物とを具備するアクティブ
マトリクス型液晶表示装置において、 前記アレイ基板のアクティブ領域内において前記絶縁部
材を介し前記遮光部材上方に形成される前記保護膜の一
部を除去することにより、前記遮光部材及び前記共通電
極が前記絶縁部材を介し容量を形成して結合し、前記ア
レイ基板のアクティブ領域周辺においては前記遮光部材
上方に形成される前記保護膜及び前記絶縁部材の一部を
除去することにより前記遮光部材及び前記共通電極が電
気的に接続する事を特徴とするアクティブマトリクス型
液晶表示装置。
4. An insulating substrate connected to a scanning line and a switching element arranged at an intersection of a signal line intersecting the scanning line and having an array of pixels formed of pixel electrodes arranged in a matrix, A conductive light-shielding member insulated by a member and covering at least the upper part of the switching element; a coloring member provided at a position corresponding to the pixel electrode; and a protective film provided on the upper surface of the light-shielding member insulated by the insulating member. A counter substrate having a common electrode formed corresponding to the pixel electrode and facing the array substrate with a gap therebetween; and a liquid crystal composition sealed between the array substrate and the counter substrate. In the active matrix type liquid crystal display device, the liquid crystal display device is formed above the light shielding member via the insulating member in the active area of the array substrate. By removing a part of the protective film, the light shielding member and the common electrode form a capacitor via the insulating member and are coupled to each other, and are formed above the light shielding member around the active area of the array substrate. An active matrix liquid crystal display device, wherein the light shielding member and the common electrode are electrically connected by removing a part of the protective film and a part of the insulating member.
【請求項5】 走査線及びこの走査線と交差するよう配
線される信号線との交点に配列されるスイッチング素子
に接続されマトリクス状に配置される画素電極からなる
画素を有するアレイ基板と、絶縁部材により絶縁され少
なくとも前記スイッチング素子上方を被覆する導電性の
遮光部材及び、前記画素電極に対応する位置に設けられ
る着色部材並びに、前記絶縁部材に絶縁される前記遮光
部材上面にて保護膜を介し前記画素電極に対応して形成
される共通電極を有し前記アレイ基板に間隙を隔てて対
向配置される対向基板と、前記アレイ基板及び前記対向
基板間に封入される液晶組成物とを具備するアクティブ
マトリクス型液晶表示装置において、 前記アレイ基板のアクティブ領域内において前記絶縁部
材を介し前記遮光部材上方に形成される前記着色部材の
一部及び前記保護膜の一部を除去することにより、前記
遮光部材及び前記共通電極が前記絶縁部材を介し容量を
形成して結合し、前記アレイ基板のアクティブ領域周辺
においては前記遮光部材上方に形成される前記保護膜及
び前記絶縁部材の一部を除去することにより前記遮光部
材及び前記共通電極が電気的に接続する事を特徴とする
アクティブマトリクス型液晶表示装置。
5. An insulating substrate connected to a scanning line and a switching element arranged at an intersection of a scanning line and a signal line intersecting the scanning line, the array substrate having pixels formed of pixel electrodes arranged in a matrix, and an insulating substrate. A conductive light-shielding member insulated by a member and covering at least the upper part of the switching element; a coloring member provided at a position corresponding to the pixel electrode; and a protective film provided on the upper surface of the light-shielding member insulated by the insulating member. A counter substrate having a common electrode formed corresponding to the pixel electrode and facing the array substrate with a gap therebetween; and a liquid crystal composition sealed between the array substrate and the counter substrate. In the active matrix type liquid crystal display device, the liquid crystal display device is formed above the light shielding member via the insulating member in the active area of the array substrate. By removing a part of the colored member and a part of the protective film, the light shielding member and the common electrode form a capacitor via the insulating member and are coupled to each other, and around the active region of the array substrate, An active matrix type liquid crystal display device, wherein the light shielding member and the common electrode are electrically connected by removing a part of the protective film and the insulating member formed above the light shielding member.
【請求項6】 遮光部材上方にて除去される着色部材の
領域が、前記遮光部材上方にて除去される保護膜の領域
よりも狭く、共通電極が前記遮光部材上方において前記
着色部材及び絶縁部材と接触する事を特徴とする請求項
5に記載のアクティブマトリクス型液晶表示装置。
6. A region of the coloring member removed above the light shielding member is smaller than a region of the protective film removed above the light shielding member, and the common electrode is provided above the light shielding member with the coloring member and the insulating member. The active matrix type liquid crystal display device according to claim 5, wherein the active matrix type liquid crystal display device is in contact with the liquid crystal display device.
【請求項7】 遮光部材が、画素電極の間隙上部を遮蔽
するブラックマトリクス状である事を特徴とする請求項
3乃至請求項6のいずれかに記載のアクティブマトリク
ス型液晶表示装置。
7. The active matrix type liquid crystal display device according to claim 3, wherein the light shielding member has a black matrix shape for shielding an upper part of a gap between the pixel electrodes.
JP9031742A 1997-02-17 1997-02-17 Active matrix type liquid crystal display device Abandoned JPH10228032A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9031742A JPH10228032A (en) 1997-02-17 1997-02-17 Active matrix type liquid crystal display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9031742A JPH10228032A (en) 1997-02-17 1997-02-17 Active matrix type liquid crystal display device

Publications (1)

Publication Number Publication Date
JPH10228032A true JPH10228032A (en) 1998-08-25

Family

ID=12339493

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9031742A Abandoned JPH10228032A (en) 1997-02-17 1997-02-17 Active matrix type liquid crystal display device

Country Status (1)

Country Link
JP (1) JPH10228032A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6407418B1 (en) 1998-09-16 2002-06-18 Nec Corporation Semiconductor device, method of manufacturing the same, image sensor apparatus having the same and image reader having the same
KR100670056B1 (en) * 1999-12-27 2007-01-16 삼성전자주식회사 Panels for a liquid crystal display having a wide viewing angle and manufacturing methods of the same
WO2015096202A1 (en) * 2013-12-27 2015-07-02 深圳市华星光电技术有限公司 Liquid crystal panel and color filter substrate thereof
CN107065282A (en) * 2017-04-12 2017-08-18 惠科股份有限公司 Colorized optical filtering laminar substrate and its manufacture method
CN108037610A (en) * 2017-12-13 2018-05-15 深圳市华星光电半导体显示技术有限公司 Liquid crystal display panel and display device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6407418B1 (en) 1998-09-16 2002-06-18 Nec Corporation Semiconductor device, method of manufacturing the same, image sensor apparatus having the same and image reader having the same
US6583456B2 (en) 1998-09-16 2003-06-24 Nec Corporation Image sensor with light receiving elements of differing areas and image reader both having semiconductor device
KR100670056B1 (en) * 1999-12-27 2007-01-16 삼성전자주식회사 Panels for a liquid crystal display having a wide viewing angle and manufacturing methods of the same
WO2015096202A1 (en) * 2013-12-27 2015-07-02 深圳市华星光电技术有限公司 Liquid crystal panel and color filter substrate thereof
CN107065282A (en) * 2017-04-12 2017-08-18 惠科股份有限公司 Colorized optical filtering laminar substrate and its manufacture method
CN108037610A (en) * 2017-12-13 2018-05-15 深圳市华星光电半导体显示技术有限公司 Liquid crystal display panel and display device

Similar Documents

Publication Publication Date Title
JP3289099B2 (en) Active matrix type liquid crystal display device and manufacturing method thereof
JP3661443B2 (en) Active matrix liquid crystal display device
US6567150B1 (en) Liquid crystal display and method of manufacturing the same
US6873382B2 (en) Liquid crystal display device having array substrate of color filter on thin film transistor structure and manufacturing method thereof
JP3675404B2 (en) Transflective liquid crystal device and electronic equipment using the same
TWI416733B (en) Thin film transistor array panel and liquid crystal display including the panel
JP3050191B2 (en) Liquid crystal display
JPH09105952A (en) Active matrix type liquid crystal display device
JPH1039336A (en) Active matrix type liquid crystal display device
JP3394433B2 (en) Active matrix liquid crystal display
JP2001242490A (en) Liquid crystal display device and its manufacturing method
US7936424B2 (en) Liquid crystal display panel with light leakage prevention film and method for manufacturing the same
JPH1096949A (en) Active matrix liquid crystal display device
TW200407643A (en) Substrate for liquid crystal display and liquid crystal display having the same
JP4099324B2 (en) Liquid crystal display
JPH1020338A (en) Liquid crystal display device
JPH10253988A (en) Liquid crystal display device
JP2000066222A (en) Active matrix liquid crystal display device
JPH10228032A (en) Active matrix type liquid crystal display device
JPH1184386A (en) Active matrix type liquid crystal display device
JP3346354B2 (en) LCD panel
JP3282542B2 (en) Active matrix type liquid crystal display
JP3029426B2 (en) Array substrate of liquid crystal display element, liquid crystal display element provided with array substrate, and method of manufacturing array substrate
JPH10104644A (en) Substrate for liquid crystal display device
JP3012976B2 (en) Liquid crystal display device and method of manufacturing the same

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20040212

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20060314

A762 Written abandonment of application

Free format text: JAPANESE INTERMEDIATE CODE: A762

Effective date: 20060705