JP3282542B2 - Active matrix type liquid crystal display - Google Patents
Active matrix type liquid crystal displayInfo
- Publication number
- JP3282542B2 JP3282542B2 JP13641697A JP13641697A JP3282542B2 JP 3282542 B2 JP3282542 B2 JP 3282542B2 JP 13641697 A JP13641697 A JP 13641697A JP 13641697 A JP13641697 A JP 13641697A JP 3282542 B2 JP3282542 B2 JP 3282542B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- liquid crystal
- common electrode
- crystal display
- video signal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Description
【０００１】[0001]
【発明の属する技術分野】本発明はＯＡ機器等の画像，
文字情報の表示装置として用いられる、アクティブマト
リックス方式の液晶表示装置の構造に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention
The present invention relates to a structure of an active matrix type liquid crystal display device used as a display device for character information.
【０００２】[0002]
【従来の技術】ガラス等の絶縁基板上に薄膜トランジス
タ（以下ＴＦＴと記す）をマトリックス状に形成し、こ
れをスイッチング素子として用いるアクティブマトリッ
クス型の液晶表示装置（ＴＦＴ−ＬＣＤ）は高画質のフ
ラットパネルディスプレイとして期待が大きい。従来の
アクティブマトリックス型液晶表示装置では、液晶層を
駆動する電極として２枚の基板上に形成し対向させた透
明電極を用いていた。これは液晶に印加する電界の方向
を基板面にほぼ垂直な方向とすることで動作するツイス
テッドネマチック表示方式に代表される表示方式を採用
していることによる。2. Description of the Related Art An active matrix type liquid crystal display device (TFT-LCD) using a thin film transistor (hereinafter referred to as a TFT) in a matrix on an insulating substrate such as glass and using the thin film transistor as a switching element is a high quality flat panel. Expectations are great for displays. In a conventional active matrix type liquid crystal display device, a transparent electrode formed on two substrates and opposed to each other is used as an electrode for driving a liquid crystal layer. This is due to the adoption of a display system represented by a twisted nematic display system that operates by making the direction of the electric field applied to the liquid crystal substantially perpendicular to the substrate surface.
【０００３】一方、液晶に印加する電界の方向を基板面
にほぼ平行な方向とする方式として、櫛歯電極を用いた
方式が特公昭63−21907 号に開示されている。On the other hand, Japanese Patent Publication No. Sho 63-21907 discloses a system using a comb-shaped electrode as a system in which the direction of an electric field applied to the liquid crystal is substantially parallel to the substrate surface.
【０００４】[0004]
【発明が解決しようとする課題】上記の従来技術は液晶
層を相互に咬合する櫛歯状の電極により駆動するもので
あるが、駆動電極として櫛歯状の電極を用いたので光が
透過できる有効面積（以下開口率という）を大きくする
ことが困難である。原理的には櫛歯電極の電極幅を１〜
２μｍ程度まで縮小すれば開口率を実用レベルまで拡大
出来るが、実際には大型基板全面にわたってそのような
細線を均一にかつ断線がないように形成することは極め
て困難である。即ち、上記の従来技術では、相互に咬合
する櫛歯状の電極を用いたために画素開口率と製造歩留
まりがトレードオフの関係となり、明るい画像を有する
液晶表示装置を低コストで提供することは困難であっ
た。In the above-mentioned prior art, the liquid crystal layer is driven by interdigitated comb-shaped electrodes, but light can be transmitted because the comb-shaped electrodes are used as the driving electrodes. It is difficult to increase the effective area (hereinafter referred to as the aperture ratio). In principle, the electrode width of the comb-teeth electrode should be 1 to
If the diameter is reduced to about 2 μm, the aperture ratio can be increased to a practical level. However, in practice, it is extremely difficult to form such fine lines uniformly and without disconnection over the entire surface of a large substrate. That is, in the above-described conventional technology, since the interdigitating comb-shaped electrodes are used, the pixel aperture ratio and the manufacturing yield are in a trade-off relationship, and it is difficult to provide a liquid crystal display device having a bright image at low cost. Met.
【０００５】また、上記の従来技術の櫛歯状の電極は平
面的に形成されており、電極間のマージンを大きくとら
なければならなかった。また、上記公開公報では、基準
電極の他の電極との交差状況について開示していない。Further, the above-mentioned comb-shaped electrode of the prior art is formed in a plane, and a large margin between the electrodes has to be taken. Further, the above publication does not disclose the state of intersection of the reference electrode with another electrode.
【０００６】本発明は上記の問題を解決するものであっ
て、その目的は、開口率が高く、明るいアクティブマト
リックス型液晶表示装置を提供することにある。An object of the present invention is to solve the above-mentioned problems, and an object of the present invention is to provide a bright active matrix type liquid crystal display device having a high aperture ratio.
【０００７】[0007]
【課題を解決するための手段】一対の基板の一方の基板
には、複数の走査信号電極と、それらにマトリックス状
に交差する複数の映像信号電極と、これらの電極のそれ
ぞれの交点に対応して形成された複数の薄膜トランジス
タとを有している。Means for Solving the Problems On one of the pair of substrates, there are provided a plurality of scanning signal electrodes, a plurality of video signal electrodes intersecting the scanning signal electrodes in a matrix, and corresponding intersections of these electrodes. And a plurality of thin film transistors formed.
【０００８】また、複数の走査信号電極及び映像信号電
極で囲まれるそれぞれの領域で共通電極と薄膜トランジ
スタに接続された画素電極を有する画素が構成される。Further, a pixel having a common electrode and a pixel electrode connected to a thin film transistor is formed in each region surrounded by a plurality of scanning signal electrodes and video signal electrodes.
【０００９】その共通電極は映像信号電極の伸びている
方向とほぼ等しい方向に伸びた部分と対応する走査信号
電極に対して平行な方向に隣接する画素の共通電極と接
続するための引出配線とを有し、画素電極は対応する映
像信号電極の伸びている方向とほぼ等しい方向に伸びた
部分を有している。The common electrode has a portion extending in a direction substantially equal to the direction in which the video signal electrode extends, and a lead wiring for connecting to a common electrode of a pixel adjacent in a direction parallel to the corresponding scanning signal electrode. And the pixel electrode has a portion extending in a direction substantially equal to the direction in which the corresponding video signal electrode extends.
【００１０】その画素電極の走査信号電極に対して垂直
に伸びた部分と共通電極の映像信号電極の伸びている方
向とほぼ等しい方向に伸びた部分はその共通電極の引出
配線よりも上層に形成される。A portion of the pixel electrode extending perpendicular to the scanning signal electrode and a portion of the common electrode extending in a direction substantially equal to the direction in which the video signal electrode extends are formed in a layer higher than the common electrode lead-out wiring. Is done.
【００１１】このように画素電極の映像信号電極の伸び
ている方向とほぼ等しい方向に伸びた部分と共通電極の
映像信号電極の伸びている方向とほぼ等しい方向に伸び
た部分がその共通電極の引出配線よりも上層に形成され
ると、液晶表示装置の配向を乱す寄生電界をシールドす
ることができるので、遮光層の面積を縮小でき、開口率
を向上させることが可能となる。As described above, the portion of the pixel electrode extending in the direction substantially equal to the direction in which the video signal electrode extends and the portion of the common electrode extending in the direction substantially equal to the direction in which the video signal electrode extends are formed by the common electrode. When formed in a layer above the lead wiring, a parasitic electric field that disturbs the orientation of the liquid crystal display device can be shielded, so that the area of the light shielding layer can be reduced and the aperture ratio can be improved.
【００１２】この構成の共通電極の映像信号電極の伸び
ている方向とほぼ等しい方向に伸びた部分をスルーホー
ルを介して、対応する共通電極の引出配線の一部と接続
すると、立体的に配置することができるので、共通電極
と信号電極を近接形成することができるようになり、開
口率を向上させることができる。When a portion of the common electrode extending in the direction substantially equal to the direction in which the video signal electrode extends is connected to a part of the corresponding common electrode lead-out wiring through a through hole, the arrangement is three-dimensional. Therefore, the common electrode and the signal electrode can be formed close to each other, and the aperture ratio can be improved.
【００１３】共通電極の引出配線を走査信号電極と同層
に形成するようにすると、それらの構成を一つのマスク
で形成することができるので、フォトマスクの位置ズレ
等が相対的に減少し、製造プロセスの裕度が上がる。If the common electrode lead-out lines are formed in the same layer as the scanning signal electrodes, their structure can be formed by one mask, so that the misalignment of the photomask is relatively reduced, Increases manufacturing process latitude.
【００１４】また、共通電極の映像信号電極の伸びてい
る方向とほぼ等しい方向に伸びた部分を画素電極の映像
信号電極の伸びている方向とほぼ等しい方向に伸びた部
分と同層に形成するか、または、その構成の共通電極の
映像信号電極の伸びている方向とほぼ等しい方向に伸び
た部分を映像信号電極と同層に形成すると、共通電極の
走査信号電極と垂直な部分を画素電極の映像信号電極の
伸びている方向とほぼ等しい方向に伸びた部分、若しく
は映像信号電極を形成するのと同じフォトマスク、同じ
プロセスで形成することができるのでマスクの位置ズレ
等が相対的に減少し、製造コストを低くすることができ
る。The portion of the common electrode extending in the direction substantially equal to the direction in which the video signal electrode extends is formed in the same layer as the portion of the pixel electrode extending in the direction substantially equal to the direction in which the video signal electrode extends. Or, if a portion of the common electrode extending in a direction substantially equal to the direction in which the video signal electrode extends is formed on the same layer as the video signal electrode, a portion of the common electrode perpendicular to the scanning signal electrode is formed as a pixel electrode. The portion that extends in the direction substantially the same as the direction in which the video signal electrode extends, or the same photomask that forms the video signal electrode, and the same process can be used, so the mask misalignment is relatively reduced. In addition, the manufacturing cost can be reduced.
【００１５】さらに、この構成の映像信号電極の伸びて
いる方向とほぼ等しい方向に伸びた部分の少なくとも一
部を液晶層に接するように形成すると、液晶層にさらに
強い電界を生じさせることができるので、低い印加電圧
で液晶を駆動させることができる。Further, when at least a part of a portion extending in a direction substantially equal to a direction in which the video signal electrode of this configuration extends is in contact with the liquid crystal layer, a stronger electric field can be generated in the liquid crystal layer. Therefore, the liquid crystal can be driven with a low applied voltage.
【００１６】また、これらの構成の共通電極の表面を自
己酸化膜または自己窒化膜で被覆された金属電極によっ
て構成された電極とすることにより、電極と電極の交差
部、特に、共通電極と画素電極を互いに重ね合わせた時
にこれらの間の短絡不良の発生を防止出来るので画素欠
陥を低減出来る。また、自己の保護膜としても作用する
ので、液晶層に接するように形成しても、腐食等が起き
づらくなる。Further, by forming the surface of the common electrode having such a structure as an electrode constituted by a metal electrode covered with a self-oxidizing film or a self-nitriding film, the intersection of the electrode and the electrode, in particular, the common electrode and the pixel When the electrodes are overlapped with each other, the occurrence of a short circuit between them can be prevented, so that pixel defects can be reduced. In addition, since it also functions as a self-protecting film, even if it is formed so as to be in contact with the liquid crystal layer, corrosion or the like hardly occurs.
【００１７】これらの画素電極と共通電極を少なくとも
その一部において絶縁膜を介して異層化すると、互いに
重畳させることが可能となるので、画素開口率を大きく
できる。また、画素電極と共通電極の重畳部をもって付
加容量を形成でき、電圧保持特性を改善出来るので、液
晶抵抗の低下やＴＦＴのオフ抵抗の低下による画質の低
下を補償出来る。When the pixel electrode and the common electrode are formed in different layers at least in part via an insulating film, the pixel electrode and the common electrode can be overlapped with each other, so that the pixel aperture ratio can be increased. Further, since the additional capacitance can be formed by the overlapping portion of the pixel electrode and the common electrode, and the voltage holding characteristic can be improved, it is possible to compensate for the decrease in the image quality due to the decrease in the liquid crystal resistance and the TFT off-resistance.
【００１８】また、他の構成としては、以下の構成も考
えられる。The following configuration is also conceivable as another configuration.
【００１９】一対の基板と、この一対の基板に挟持され
た液晶層とを有し、一対の基板の一方の基板には、複数
の走査信号電極と、それらにマトリックス状に交差する
複数の映像信号電極と、これらの電極のそれぞれの交点
に対応して形成された複数の薄膜トランジスタとを有す
る液晶表示装置であって、複数の走査信号電極と複数の
映像信号電極で囲まれるそれぞれの領域で共通電極と薄
膜トランジスタに接続された画素電極とを有する画素が
構成され、その共通電極は、映像信号電極の伸びている
方向とほぼ等しい方向に伸びた部分と、走査信号電極に
対して平行に隣接する画素の共通電極と接続するための
引出配線とを有し、画素電極は走査信号電極に対して平
行な方向に伸びた部分を有している。It has a pair of substrates, and a liquid crystal layer sandwiched between the pair of substrates. One of the pair of substrates has a plurality of scanning signal electrodes and a plurality of images intersecting them in a matrix. A liquid crystal display device having a signal electrode and a plurality of thin film transistors formed corresponding to respective intersections of these electrodes, wherein the liquid crystal display device is common to respective regions surrounded by a plurality of scanning signal electrodes and a plurality of video signal electrodes. A pixel having an electrode and a pixel electrode connected to the thin film transistor is formed, and the common electrode is adjacent to a portion extending in a direction substantially equal to the direction in which the video signal electrode extends and parallel to the scanning signal electrode. The pixel electrode has a lead line for connecting to a common electrode of the pixel, and the pixel electrode has a portion extending in a direction parallel to the scanning signal electrode.
【００２０】その共通電極の引出配線は走査信号電極と
同層に形成され、その共通電極の映像信号電極の伸びて
いる方向とほぼ等しい方向に伸びた部分は対応する画素
電極の映像信号電極の伸びている方向とほぼ等しい方向
に伸びた部分、または映像信号電極と同層であって、共
通電極の引出配線とは絶縁膜を介して異層に形成され、
共通電極の引出配線と共通電極の走査信号電極に対して
垂直な部分はスルーホールを介して接続される。The lead wire of the common electrode is formed in the same layer as the scanning signal electrode, and the portion of the common electrode extending in a direction substantially equal to the direction in which the video signal electrode extends is a portion of the video signal electrode of the corresponding pixel electrode. A portion extending in a direction substantially equal to the extending direction, or the same layer as the video signal electrode, is formed in a different layer from the lead wiring of the common electrode via an insulating film,
The portion of the common electrode that is perpendicular to the extraction wiring and the scanning signal electrode is connected through a through hole.
【００２１】このように構成することにより、共通電極
または画素電極の形状の設計自由度が大きくなり、櫛歯
状電極を用いる必要がないために開口率を向上させるこ
とができる。With such a configuration, the degree of freedom in designing the shape of the common electrode or the pixel electrode is increased, and the aperture ratio can be improved because it is not necessary to use a comb-shaped electrode.
【００２２】[0022]
〔実施例１〕図１〜図４は本発明の第１の実施例の動作
原理を示す単位画素の断面図及び平面図である。ガラス
基板１上にＣｒよりなるゲート電極１０およびコモン電
極（共通電極）１６を形成し、これらの電極を覆うよう
に窒化シリコン（ＳｉＮ）膜からなるゲート絶縁膜２０
を形成した。ゲート電極１０上にゲート絶縁膜２０上を
介して非晶質シリコン（ａ−Ｓｉ）膜３０を形成しトラ
ンジスタの能動層とする。前記ａ−Ｓｉ膜３０のパター
ンの一部に重畳するようにＭｏよりなるドレイン電極１
４，ソース電極１５を形成し、これらすべてを被覆する
ようにＳｉＮ膜よりなる保護絶縁膜２３を形成した。以
上よりなる単位画素をマトリックス状に配置したアクテ
ィブマトリックス基板の表面にポリイミドよりなる配向
制御膜ＯＲＩ１，ＯＲＩ２を形成し、表面にラビング処
理を施した。同じくラビング処理を施した配向制御膜Ｏ
ＲＩ１，ＯＲＩ２を表面に形成した対向基板５０８と、
前記アクティブマトリックス基板の間に棒状の液晶分子
５１３を含む液晶組成物を封入し、二枚の基板の外表面
に偏光板５０５を配置した。液晶分子５１３は無電界時
（図１および図２）にはストライプ状のソース電極１５
およびコモン電極１６の長手方向に対して若干の角度、
即ち液晶分子の長軸（光学軸）と電界の方向（ソース電
極とコモン電極の長手方向に垂直）のなす角度にして４
５°以上９０°未満を持つように配向されている。尚、
上下基板との界面での液晶分子の配向は互いに平行とし
た。また、液晶分子の誘電異方性は正である。ここで、
ＴＦＴのゲート電極１０に電圧を印加してＴＦＴをオン
とするとソース電極１５に電圧が印加し、ソース電極１
５−コモン電極１６間に電界Ｅ１を誘起させると、図３
および図４に示すように電界方向に液晶分子が向きを変
える。上下基板の表面に配置した２枚の偏光板５０５の
偏光透過軸を所定角度ＡＧＬ１に配置することで電界印
加によって光の透過率を変化させることが可能になる。
このように、本発明の表示方式では従来必要であった透
明電極がなくてもコントラストを与える表示が可能とな
る。このため、透明電極の形成に関わる工程を全て省略
出来るので製造コスト削減が可能となる。さらに、従来
の透明電極を用いる表示方式では、電圧印加により液晶
分子の長軸を基板界面から立ち上がらせ複屈折位相差を
０とすることで暗状態を得ているが、複屈折位相差が０
となる視角方向は正面、即ち基板界面に垂直な方向のみ
であり、僅かでも傾くと副屈折位相差が現れ、ノーマリ
ーオープン型の表示では光が漏れコントラストの低下や
階調レベルの反転を引き起こす。ところが、本実施例の
表示方式では液晶分子の長軸は基板とほぼ平行であり電
圧を印加しても立ち上がることが無い。従って視角方向
を変えたときの明るさの変化が小さく視角特性が大幅に
改善される効果が有る。[Embodiment 1] FIGS. 1 to 4 are a sectional view and a plan view of a unit pixel showing an operation principle of a first embodiment of the present invention. A gate electrode 10 made of Cr and a common electrode (common electrode) 16 are formed on a glass substrate 1, and a gate insulating film 20 made of a silicon nitride (SiN) film is formed so as to cover these electrodes.
Was formed. An amorphous silicon (a-Si) film 30 is formed on the gate electrode 10 with the gate insulating film 20 interposed therebetween to form an active layer of a transistor. A drain electrode 1 made of Mo so as to overlap a part of the pattern of the a-Si film 30.
4, a source electrode 15 was formed, and a protective insulating film 23 made of a SiN film was formed so as to cover all of them. The alignment control films ORI1 and ORI2 made of polyimide were formed on the surface of an active matrix substrate in which the unit pixels constituted as described above were arranged in a matrix, and rubbing was performed on the surface. Alignment control film O also rubbed
A counter substrate 508 having RI1 and ORI2 formed on its surface;
A liquid crystal composition containing rod-shaped liquid crystal molecules 513 was sealed between the active matrix substrates, and a polarizing plate 505 was disposed on the outer surfaces of the two substrates. The liquid crystal molecules 513 have a stripe-shaped source electrode 15 when there is no electric field (FIGS. 1 and 2).
And a slight angle with respect to the longitudinal direction of the common electrode 16,
That is, the angle between the long axis (optical axis) of the liquid crystal molecules and the direction of the electric field (perpendicular to the longitudinal direction of the source electrode and the common electrode) is 4
It is oriented to have 5 ° or more and less than 90 °. still,
The orientation of the liquid crystal molecules at the interface with the upper and lower substrates was parallel to each other. The dielectric anisotropy of the liquid crystal molecules is positive. here,
When a voltage is applied to the gate electrode 10 of the TFT to turn on the TFT, a voltage is applied to the source electrode 15 and the source electrode 1
When an electric field E1 is induced between the 5-common electrode 16, FIG.
Also, as shown in FIG. 4, the liquid crystal molecules change their direction in the direction of the electric field. By arranging the polarization transmission axes of the two polarizing plates 505 disposed on the surfaces of the upper and lower substrates at a predetermined angle AGL1, it becomes possible to change the light transmittance by applying an electric field.
As described above, according to the display method of the present invention, it is possible to provide a display that provides a contrast without a transparent electrode, which is conventionally required. For this reason, all the steps relating to the formation of the transparent electrode can be omitted, so that the manufacturing cost can be reduced. Further, in the conventional display method using a transparent electrode, a dark state is obtained by raising the major axis of liquid crystal molecules from the substrate interface by applying a voltage and setting the birefringence phase difference to 0.
The viewing angle direction is only the front direction, that is, the direction perpendicular to the substrate interface. If it is slightly tilted, a sub-refractive phase difference appears, and in a normally open type display, light leaks, causing a decrease in contrast and inversion of gradation level. . However, in the display method of this embodiment, the major axis of the liquid crystal molecules is substantially parallel to the substrate and does not rise even when a voltage is applied. Therefore, there is an effect that the change in brightness when the viewing angle direction is changed is small and the viewing angle characteristics are greatly improved.
【００２３】さらに、本実施例ではコモン電極１６をゲ
ート電極１０と同一のレイヤーに形成し、ドレイン電極
１４および液晶駆動電極であるソース電極１５とコモン
電極１６をゲート絶縁膜２０によって絶縁分離した。ま
た、従来使用されていた櫛歯状電極を廃し、ソース電極
１５とコモン電極１６をゲート絶縁膜２０を介して重畳
させた。このようにドレイン電極１４およびソース電極
１５とコモン電極１６を絶縁分離することによりソース
電極１５およびコモン電極１６の平面パターンの設計自
由度が大きくなり画素開口率を向上させることが可能と
なる。また、ソース電極１５とコモン電極１６の重畳部
は液晶容量と並列に接続される付加容量として作用する
ので液晶印加電圧の保持能を向上させることが出来る。
このような効果は従来の櫛歯状電極では得られないもの
であり、ドレイン電極１４およびソース電極１５とコモ
ン電極１６を絶縁分離することにより初めて達成され
る。以上のように、ドレイン電極１４およびソース電極
１５とコモン電極１６を異層化することにより平面パタ
ーンの設計自由度が大きくなったので、電極形状として
は本実施例に限らず多種多彩な構造が採用出来る。Further, in this embodiment, the common electrode 16 is formed on the same layer as the gate electrode 10, and the drain electrode 14, the source electrode 15 which is a liquid crystal drive electrode, and the common electrode 16 are insulated and separated by the gate insulating film 20. Further, the conventionally used comb-shaped electrode is abolished, and the source electrode 15 and the common electrode 16 are overlapped with the gate insulating film 20 interposed therebetween. As described above, by insulating and separating the drain electrode 14 and the source electrode 15 from the common electrode 16, the degree of freedom in designing the planar pattern of the source electrode 15 and the common electrode 16 is increased, and the pixel aperture ratio can be improved. Further, since the overlapping portion of the source electrode 15 and the common electrode 16 acts as an additional capacitance connected in parallel with the liquid crystal capacitance, the ability to hold the liquid crystal applied voltage can be improved.
Such an effect cannot be obtained by the conventional comb-shaped electrode, and is achieved only by insulating and isolating the common electrode 16 from the drain electrode 14 and the source electrode 15. As described above, since the drain electrode 14 and the source electrode 15 and the common electrode 16 are formed in different layers, the degree of freedom in designing a plane pattern is increased. Therefore, the electrode shape is not limited to this embodiment, and various and various structures are available. Can be adopted.
【００２４】〔実施例２〕図５は本発明の第２の実施例
の単位画素の平面図を示す。本実施例の断面構造は前記
第１の実施例（図１）と同様である。本実施例ではコモ
ン電極１６を十字型とし、一方ソース電極１５はリング
型とした点に特徴が有る。コモン電極１６とソース電極
１５はＣ１，Ｃ２，Ｃ３，Ｃ４と記した箇所で互いに重
なり付加容量を形成している。本実施例によれば、コモ
ン電極１６とゲート電極１０の間の距離を大きくとれる
のでコモン電極１６とゲート電極１０間の短絡不良を防
止出来る。また、ソース電極１５をリング型にすること
により、ソース電極の任意の箇所で断線が発生しても２
箇所以上の断線が無いかぎりソース電極全体に給電さ
れ、正常な動作が可能である。即ち、本構造は断線に対
し冗長性をもち歩留まりを向上させることができる。Embodiment 2 FIG. 5 is a plan view of a unit pixel according to a second embodiment of the present invention. The sectional structure of this embodiment is the same as that of the first embodiment (FIG. 1). The present embodiment is characterized in that the common electrode 16 has a cross shape and the source electrode 15 has a ring shape. The common electrode 16 and the source electrode 15 overlap each other at locations denoted by C1, C2, C3, and C4 to form an additional capacitance. According to the present embodiment, since the distance between the common electrode 16 and the gate electrode 10 can be increased, a short circuit failure between the common electrode 16 and the gate electrode 10 can be prevented. Further, by forming the source electrode 15 in a ring shape, even if a disconnection occurs
Power is supplied to the entire source electrode as long as there is no disconnection beyond the point, and normal operation is possible. That is, the present structure has redundancy against disconnection and can improve the yield.
【００２５】〔実施例３〕図６は本発明の第３の実施例
の単位画素の平面図を示す。本実施例の断面構造は前記
第１の実施例（図１）と同様である。本実施例では、ソ
ース電極１５は第２の実施例と同様にリング型とし、コ
モン電極１６をＴ字型とした点に特徴が有る。本実施例
では、リング状のソース電極の短辺の一方とコモン電極
が重なるようにすることにより、開口率を低下させるこ
と無く大きな付加容量を形成出来、電圧保持特性を改善
出来る。また、水平方向のコモン電極を光透過領域内か
ら排除したので画素開口率向上に有利である。[Embodiment 3] FIG. 6 is a plan view of a unit pixel according to a third embodiment of the present invention. The sectional structure of this embodiment is the same as that of the first embodiment (FIG. 1). This embodiment is characterized in that the source electrode 15 has a ring shape as in the second embodiment, and the common electrode 16 has a T-shape. In this embodiment, by making one of the short sides of the ring-shaped source electrode overlap the common electrode, a large additional capacitance can be formed without lowering the aperture ratio, and the voltage holding characteristics can be improved. In addition, since the horizontal common electrode is excluded from the light transmission region, it is advantageous for improving the pixel aperture ratio.
【００２６】〔実施例４〕図７は本発明の第４の実施例
の単位画素の平面図を示す。本実施例の断面構造は前記
第１の実施例（図１）と同様である。本実施例では、ソ
ース電極１５は第２の実施例と同様にリング型とし、コ
モン電極１６を工字型とした点に特徴が有る。本実施例
では、リング状のソース電極の２つの短辺とコモン電極
が重なるようにすることにより、開口率を低下させるこ
と無くより大きな付加容量を形成出来、電圧保持特性を
改善出来る。[Embodiment 4] FIG. 7 is a plan view of a unit pixel according to a fourth embodiment of the present invention. The sectional structure of this embodiment is the same as that of the first embodiment (FIG. 1). The present embodiment is characterized in that the source electrode 15 is formed in a ring shape as in the second embodiment, and the common electrode 16 is formed in a character shape. In this embodiment, by making the two short sides of the ring-shaped source electrode overlap the common electrode, a larger additional capacitance can be formed without lowering the aperture ratio, and the voltage holding characteristics can be improved.
【００２７】〔実施例５〕図８は本発明の第５の実施例
の単位画素の平面図を示す。本実施例の断面構造は前記
第１の実施例（図１）と同様である。本実施例では、コ
モン電極１６はΠ字型とし、ソース電極１５をＴ字型と
した。本実施例は前記第２〜第４の実施例とは異なり、
画素の中央にソース電極１５を、その左右両側にコモン
電極１６を配置した点に特徴が有る。このような配置の
利点は、コモン電極１６とドレイン電極１４がゲート絶
縁膜により分離されているためにこれらの電極の間の距
離を小さく出来る点にある。これにより、コモン電極１
６をドレイン電極１４に出来る限り近付けることにより
光透過領域を拡大出来開口率を向上させることが出来
る。ただし、この時コモン電極１６とドレイン電極１４
が重なると、これらの電極間の寄生容量が急激に増大す
る。コモン電極とドレイン電極の間の過大な寄生容量は
コモン電極信号の波形歪をもたらし、スミアと呼ばれる
画質低下が発生するので望ましくない。したがって、コ
モン電極とドレイン電極は可能な限り近付けても良いが
決して重ならないようにすることが必要である。[Embodiment 5] FIG. 8 is a plan view of a unit pixel according to a fifth embodiment of the present invention. The sectional structure of this embodiment is the same as that of the first embodiment (FIG. 1). In this embodiment, the common electrode 16 has a Π shape, and the source electrode 15 has a T shape. This embodiment is different from the second to fourth embodiments,
It is characterized in that a source electrode 15 is arranged at the center of a pixel, and a common electrode 16 is arranged on both left and right sides thereof. The advantage of such an arrangement is that the distance between the common electrode 16 and the drain electrode 14 can be reduced because the common electrode 16 and the drain electrode 14 are separated by the gate insulating film. Thereby, the common electrode 1
By bringing 6 closer to the drain electrode 14 as much as possible, the light transmission region can be enlarged and the aperture ratio can be improved. However, at this time, the common electrode 16 and the drain electrode 14
Overlap, the parasitic capacitance between these electrodes increases rapidly. Excessive parasitic capacitance between the common electrode and the drain electrode causes a waveform distortion of the common electrode signal, and causes image quality deterioration called smear, which is not desirable. Therefore, the common electrode and the drain electrode may be brought as close as possible but must never overlap.
【００２８】〔実施例６〕図９は本発明の第６の実施例
の単位画素の平面図を示す。本実施例の断面構造は前記
第１の実施例（図１）と同様である。本実施例では、ソ
ース電極１５を工字型とし、コモン電極１６はリング型
とした点に特徴が有る。本実施例では前記第５の実施例
と同様に開口率を向上させることができることに加え、
ソース電極１５とコモン電極１６の重なりを大きく出来
るので付加容量を大きく出来る。[Embodiment 6] FIG. 9 is a plan view of a unit pixel according to a sixth embodiment of the present invention. The sectional structure of this embodiment is the same as that of the first embodiment (FIG. 1). The present embodiment is characterized in that the source electrode 15 is formed in a character shape and the common electrode 16 is formed in a ring shape. In the present embodiment, the aperture ratio can be improved as in the fifth embodiment,
Since the overlap between the source electrode 15 and the common electrode 16 can be increased, the additional capacitance can be increased.
【００２９】〔実施例７〕図１０は本発明の第７の実施
例の単位画素の平面図を示す。本実施例の断面構造は前
記第１の実施例（図１）と同様である。本実施例では、
ソース電極１５をはしご型とし、コモン電極１６はリン
グ型として互いに重ね合わせた構造を有し、前記第１〜
第６の実施例と異なり液晶を駆動する電界は画素の長手
方向と平行な方向とした点に特徴が有る。本実施例で
は、はしご型電極の段数を変えることによりコモン電極
１６とソース電極１５間のギャップを任意に変えること
が出来る。電極間ギャップは液晶の応答速度を決めるの
で、ギャップを任意に調節することにより所望の応答速
度を得ることが可能となる。[Embodiment 7] FIG. 10 is a plan view of a unit pixel according to a seventh embodiment of the present invention. The sectional structure of this embodiment is the same as that of the first embodiment (FIG. 1). In this embodiment,
The source electrode 15 has a ladder shape, and the common electrode 16 has a structure in which the common electrode 16 is overlapped with each other as a ring shape.
Unlike the sixth embodiment, the electric field for driving the liquid crystal is characterized in that it is in a direction parallel to the longitudinal direction of the pixel. In this embodiment, the gap between the common electrode 16 and the source electrode 15 can be arbitrarily changed by changing the number of ladder-shaped electrodes. Since the gap between the electrodes determines the response speed of the liquid crystal, a desired response speed can be obtained by arbitrarily adjusting the gap.
【００３０】以上のように、コモン電極とソース電極，
ドレイン電極を異層化することにより多種多様な電極形
状の設計が可能となり、用途に応じた表示性能を実現す
ることが出来る。As described above, the common electrode and the source electrode
By forming the drain electrode in a different layer, a variety of electrode shapes can be designed, and display performance according to the application can be realized.
【００３１】以上の実施例ではコモン電極をゲート電極
と同一の電極材料で構成する場合を示してきたが、コモ
ン電極またはソース電極を複数の電極を組み合わせて構
成しても良い。以下、そのような実施例を示す。In the above embodiment, the case where the common electrode is formed of the same electrode material as the gate electrode has been described. However, the common electrode or the source electrode may be formed by combining a plurality of electrodes. Hereinafter, such an embodiment will be described.
【００３２】〔実施例８〕図１１は本発明の第８の実施
例の単位画素の平面図を示す。図１２は図１１中Ｂ−
Ｂ′における断面図を示す。本実施例ではコモン電極は
引出配線１６０とコモン側駆動電極１６１の２つの部材
によって構成され、これらはゲート絶縁膜２０に設けた
スルーホールＴＨを介して接続されている。ここで引出
配線１６０にはゲート電極１０と同一の電極材料を、コ
モン側駆動電極１６１にはソース電極１５と同一の電極
材料を用いた。本実施例においてもコモン電極の引出配
線１６０とソース電極１５はゲート絶縁膜２０によって
異層化されているため、互いに交差させることができ交
差部Ｃｓｔにおいて付加容量を構成し、保持特性を改善
出来る。また、コモン側駆動電極１６１をソース電極１
５と同一層内に形成することにより、ソース電極１５と
隣接するドレイン電極１４との間で形成される不必要な
電界をシールドすることが可能となる。液晶の駆動に直
接関与しない電極によって形成される寄生電界は液晶の
配向を乱し、表示画像のコントラスト低下を招くので、
通常電極の周囲を遮光層によって隠すことによって対策
している。しかしこのような遮光層は開口率を低下させ
るという欠点を持つ。これに対して本実施例のように、
液晶の配向を乱す寄生電界をシールドすることにより遮
光層の面積を縮小出来るので開口率を向上させることが
可能となる。[Embodiment 8] FIG. 11 is a plan view of a unit pixel according to an eighth embodiment of the present invention. FIG. 12 shows B- in FIG.
The sectional view at B 'is shown. In the present embodiment, the common electrode is composed of two members, namely, the extraction wiring 160 and the common-side drive electrode 161, and these are connected via the through hole TH provided in the gate insulating film 20. Here, the same electrode material as the gate electrode 10 was used for the lead wiring 160, and the same electrode material as the source electrode 15 was used for the common side drive electrode 161. Also in this embodiment, since the common electrode lead-out line 160 and the source electrode 15 are separated from each other by the gate insulating film 20, they can intersect with each other, and an additional capacitance can be formed at the intersection Cst to improve the holding characteristics. . Further, the common side drive electrode 161 is connected to the source electrode 1.
5, it is possible to shield an unnecessary electric field formed between the source electrode 15 and the adjacent drain electrode 14. The parasitic electric field formed by the electrodes that are not directly involved in driving the liquid crystal disturbs the orientation of the liquid crystal and causes a decrease in the contrast of the displayed image.
Usually, the countermeasures are taken by hiding the periphery of the electrode with a light shielding layer. However, such a light-shielding layer has a drawback of lowering the aperture ratio. In contrast, as in this embodiment,
By shielding the parasitic electric field that disturbs the alignment of the liquid crystal, the area of the light shielding layer can be reduced, so that the aperture ratio can be improved.
【００３３】〔実施例９〕図１３は本発明の第９の実施
例の単位画素の平面図を示す。図１４は図１３中Ｃ−
Ｃ′における断面図を示す。本実施例ではコモン電極の
引出配線１６０は、前記第７の実施例と同様にゲート電
極１０と同一の電極材料で構成し、コモン側駆動電極１
６１は保護絶縁膜２３上に設けた新たな電極によって構
成し、これらをスルーホールによって接続した。本実施
例ではコモン電極は引出配線１６０，コモン側駆動電極
１６１ともにソース電極１５と絶縁分離されているので
前記の実施例と同様な効果が有る。Embodiment 9 FIG. 13 is a plan view of a unit pixel according to a ninth embodiment of the present invention. FIG. 14 shows C- in FIG.
The sectional view at C 'is shown. In this embodiment, the common electrode lead-out line 160 is made of the same electrode material as the gate electrode 10 as in the seventh embodiment, and the common side driving electrode 1
Numeral 61 is constituted by new electrodes provided on the protective insulating film 23, and these are connected by through holes. In the present embodiment, the common electrode is insulated and separated from the source electrode 15 for both the lead-out wiring 160 and the common-side drive electrode 161, so that the same effect as in the above-described embodiment is obtained.
【００３４】〔実施例１０〕前記実施例ではコモン電極
のコモン側駆動電極１６１は保護絶縁膜２３上に設けた
電極によって構成したが、コモン側駆動電極はゲート電
極１０の下層に設けても良い。図１５は本発明の第１０
の実施例の単位画素の平面図を示す。図１６は図１５中
Ｄ−Ｄ′における断面図を示す。本実施例ではコモン電
極の引出配線１６０は、前記第７の実施例と同様にゲー
ト電極１０と同一の電極材料で構成し、コモン側駆動電
極１６１はゲート電極１０の下層に絶縁膜２４を介して
設けた新たな電極によって構成し、これらをスルーホー
ルによって接続した。本実施例ではコモン電極は引出配
線１６０，コモン側駆動電極１６１ともにソース電極１
５と絶縁分離されているので前記の実施例と同様な効果
が有る。[Embodiment 10] In the above embodiment, the common-side drive electrode 161 of the common electrode is constituted by an electrode provided on the protective insulating film 23. However, the common-side drive electrode may be provided below the gate electrode 10. . FIG. 15 shows a tenth embodiment of the present invention.
FIG. 4 is a plan view of a unit pixel according to the example. FIG. 16 is a sectional view taken along line DD 'in FIG. In this embodiment, the common electrode lead-out line 160 is made of the same electrode material as the gate electrode 10 as in the seventh embodiment, and the common-side drive electrode 161 is disposed below the gate electrode 10 with the insulating film 24 interposed therebetween. , And these were connected by through holes. In this embodiment, the common electrode is the source electrode 1 for both the extraction wiring 160 and the common-side drive electrode 161.
5, the same effect as in the above embodiment can be obtained.
【００３５】〔実施例１１〕図１７は本発明の第１１の
実施例の単位画素の平面図を示す。図１８は図１７中Ｅ
−Ｅ′における断面図を示す。本実施例ではコモン電極
１６はゲート電極１０の下層に下地絶縁膜２４を介して
設けた新たな電極によって構成した。従って、コモン電
極はゲート電極１０およびソース電極１５，ドレイン電
極１４の全てと異層化される。そこで、本実施例はコモ
ン電極１６をゲート電極と平行な方向だけでなくゲート
電極と垂直な方向にも引出して網目状とすることが可能
となる。このことにより、コモン電極の抵抗値を下げら
れるのでコモン電圧の波形歪を低減しスミアの発生を防
止出来る効果が有る。[Embodiment 11] FIG. 17 is a plan view of a unit pixel according to an eleventh embodiment of the present invention. FIG. 18 shows E in FIG.
The sectional view at -E 'is shown. In this embodiment, the common electrode 16 is constituted by a new electrode provided below the gate electrode 10 with the base insulating film 24 interposed therebetween. Therefore, the common electrode has a different layer from the gate electrode 10, the source electrode 15, and the drain electrode 14. Therefore, in this embodiment, it is possible to draw out the common electrode 16 not only in the direction parallel to the gate electrode but also in the direction perpendicular to the gate electrode to form a mesh. As a result, the resistance value of the common electrode can be reduced, which has the effect of reducing the waveform distortion of the common voltage and preventing the occurrence of smear.
【００３６】〔実施例１２〕図１９は本発明の第１２の
実施例の単位画素の平面図を示す。図２０は図１９中Ｆ
−Ｆ′における断面図を示す。本実施例ではコモン電極
１６は保護絶縁膜２３上に設けた新たな電極によって構
成した。本実施例においても、前記実施例１１と同様に
コモン電極はゲート電極１０およびソース電極１５，ド
レイン電極１４の全てと異層化されるので、コモン電極
１６をゲート電極と平行な方向だけでなくゲート電極と
垂直な方向にも引出して網目状とすることが可能となり
コモン電圧の波形歪を低減しスミアの発生を防止出来
る。[Embodiment 12] FIG. 19 is a plan view of a unit pixel according to a twelfth embodiment of the present invention. FIG. 20 shows F in FIG.
The sectional view at -F 'is shown. In this embodiment, the common electrode 16 is constituted by a new electrode provided on the protective insulating film 23. Also in this embodiment, the common electrode is formed in a different layer from the gate electrode 10 and all of the source electrode 15 and the drain electrode 14 as in the eleventh embodiment. It can also be drawn out in a direction perpendicular to the gate electrode to form a mesh, which can reduce the waveform distortion of the common voltage and prevent the occurrence of smear.
【００３７】〔実施例１３〕図２１は本発明の第１３の
実施例の単位画素の断面図を示す。本実施例の平面図は
前記実施例１と同様である。本実施例ではゲート電極１
０およびコモン電極１６はアルミニウム（Ａｌ）で構成
され、その表面はＡｌの自己酸化膜であるアルミナ（Ａ
ｌ2Ｏ3）２１によって被覆されている点に特徴がある。
このような２層絶縁膜構造を採用することによりコモン
電極１６とドレイン，ソース電極との絶縁不良が低減で
きるので画素欠陥を低減できる。Embodiment 13 FIG. 21 is a sectional view of a unit pixel according to a thirteenth embodiment of the present invention. The plan view of this embodiment is the same as that of the first embodiment. In this embodiment, the gate electrode 1
0 and the common electrode 16 are made of aluminum (Al), and the surface thereof is made of alumina (A) which is a self-oxidized film of Al.
1 2 O 3 ) 21.
By employing such a two-layer insulating film structure, insulation defects between the common electrode 16 and the drain and source electrodes can be reduced, so that pixel defects can be reduced.
【００３８】〔実施例１４〕図２２は本発明の第１４の
実施例の単位画素の平面図を示す。図２３は図２２のＧ
−Ｇ′断面図である。本実施例ではコモン電極１６はタ
ンタル（Ｔａ）で構成し、その表面はＴａの自己酸化膜
である五酸化タンタル（Ｔａ2Ｏ5）２２によって被覆し
た。また、コモン電極１６上のソース電極１５と対向す
る側のゲート絶縁膜２０および保護絶縁膜２３をエッチ
ング除去した点に特徴がある。比誘電率が２３と大きい
Ｔａ2Ｏ5を露出させることによりソース電極側に電束を
集中できるのでより低い印加電圧で液晶を駆動させるこ
とができる。[Embodiment 14] FIG. 22 is a plan view of a unit pixel according to a fourteenth embodiment of the present invention. FIG. 23 shows G in FIG.
It is -G 'sectional drawing. In this embodiment, the common electrode 16 is made of tantalum (Ta), and its surface is covered with tantalum pentoxide (Ta 2 O 5 ) 22 which is a self-oxidized film of Ta. Another feature is that the gate insulating film 20 and the protective insulating film 23 on the side facing the source electrode 15 on the common electrode 16 are removed by etching. By exposing Ta 2 O 5 having a relative dielectric constant as large as 23, the electric flux can be concentrated on the source electrode side, so that the liquid crystal can be driven with a lower applied voltage.
【００３９】図２４は本発明のアクティブマトリックス
基板鏡の等価回路を含む平面模式図である。ガラス基板
１上にゲート電極１０とドレイン電極１４とこれらに接
続されたＴＦＴとゲート電極１０に平行に引き出された
コモン電極１６とゲート電極，ドレイン電極およびコモ
ン電極の引出端子１０１，１５１，１６３が形成された
ものである。引出端子はゲート電極１０，ドレイン電極
１４およびコモン電極１６に外部回路から信号を供給す
るための端子である。FIG. 24 is a schematic plan view including an equivalent circuit of the active matrix substrate mirror of the present invention. On the glass substrate 1, a gate electrode 10 and a drain electrode 14, TFTs connected to them, a common electrode 16 drawn in parallel with the gate electrode 10, and gate electrodes 101, 151, 163 of the gate electrode, drain electrode and common electrode. It was formed. The extraction terminal is a terminal for supplying a signal to the gate electrode 10, the drain electrode 14, and the common electrode 16 from an external circuit.
【００４０】図２５はアクティブマトリックス部の画素
配列の平面図である。図２５では単位画素として図９に
示したものを使用した。各画素はゲート電極１０が延在
する方向と同一方向に複数配置され、画素列Ｘ１，Ｘ
２，Ｘ３…のそれぞれを構成している。各画素列Ｘ１，
Ｘ２，Ｘ３…のそれぞれの画素は薄膜トランジスタTFT
1，コモン電極１６およびソース電極１５の配置位置を
同一に構成している。ドレイン電極１４はゲート電極１
０と交差するように配置され各画素列の内の１個の画素
に接続されている。FIG. 25 is a plan view of the pixel array of the active matrix section. In FIG. 25, the unit pixel shown in FIG. 9 is used. A plurality of pixels are arranged in the same direction as the direction in which the gate electrode 10 extends.
2, X3... Each pixel column X1,
Each pixel of X2, X3 ... is a thin film transistor TFT
1, the arrangement positions of the common electrode 16 and the source electrode 15 are the same. The drain electrode 14 is the gate electrode 1
The pixels are arranged so as to cross 0 and are connected to one pixel in each pixel column.
【００４１】図２６は本発明の液晶表示装置のセル断面
図である。下側のガラス基板１上にゲート電極（走査信
号電極）１０とドレイン電極（映像信号電極）１４がマ
トリックス状に形成され、その交点付近に形成されたＴ
ＦＴを介してソース電極１５を駆動する。棒状の液晶分
子５１３を含む液晶層を挾んで対向する対向基板508上
にはカラーフィルタ５０７，カラーフィルタ保護膜５１
１，遮光用ブラックマトリックス５１２が形成されてい
る。図２６の中央部は単位画素の断面図を、左側は外部
接続端子の存在する部分の断面図を、右側は外部接続端
子の存在しない部分の断面図を示している。図２６の右
側，左側に示すシール材ＳＬは液晶層を封止するように
構成されており、液晶封入口（図示せず）を除くガラス
基板１，対向基板（ガラス基板）５０８の縁全体に沿っ
て形成されている。シール材は例えばエポキシ樹脂で形
成されている。配向制御膜ＯＲＩ１，ＯＲＩ２，保護膜
２３，カラーフィルタ保護膜５１１の各層はシール材Ｓ
Ｌの内側に形成される。偏光板５０５は一対のガラス基
板１，対向基板（ガラス基板）５０８の外側表面に形成
されている。液晶層内の液晶分子５１３は配向制御膜Ｏ
ＲＩ１，ＯＲＩ２によって所定の方向に配向されてお
り、バックライトＢＬからの光をソース電極１５とコモ
ン電極１６の間の部分の液晶層で調節することによりカ
ラー画像の表示が可能となる。FIG. 26 is a sectional view of a cell of the liquid crystal display device of the present invention. A gate electrode (scanning signal electrode) 10 and a drain electrode (video signal electrode) 14 are formed on the lower glass substrate 1 in a matrix, and T is formed near the intersection thereof.
The source electrode 15 is driven via the FT. A color filter 507 and a color filter protective film 51 are formed on a counter substrate 508 that faces the liquid crystal layer including the rod-shaped liquid crystal molecules 513 therebetween.
1. A light-shielding black matrix 512 is formed. 26 shows a cross-sectional view of a unit pixel in the center, a cross-sectional view of a portion where an external connection terminal is present on the left side, and a cross-sectional view of a portion where no external connection terminal is present on the right side. The sealing material SL shown on the right and left sides of FIG. 26 is configured to seal the liquid crystal layer, and covers the entire edge of the glass substrate 1 and the opposite substrate (glass substrate) 508 except for a liquid crystal sealing port (not shown). It is formed along. The sealing material is formed of, for example, an epoxy resin. Each layer of the orientation control films ORI1, ORI2, the protective film 23, and the color filter protective film 511 is made of a sealing material S
It is formed inside L. The polarizing plate 505 is formed on the outer surfaces of the pair of glass substrates 1 and the opposite substrate (glass substrate) 508. The liquid crystal molecules 513 in the liquid crystal layer are aligned with the alignment control film O.
It is oriented in a predetermined direction by RI1 and ORI2, and a color image can be displayed by adjusting the light from the backlight BL with the liquid crystal layer in the portion between the source electrode 15 and the common electrode 16.
【００４２】[0042]
【発明の効果】以上のように本発明によれば、共通電極
（コモン電極）の引出配線と映像信号電極（ソース電
極），画素電極（ドレイン電極）を絶縁膜により異層化
したことにより、櫛歯状電極を用いること無く、基板面
に平行な電界を生じさせ液晶を駆動させることが可能と
なるので、製造歩留まりが高く、かつ大きな画素開口率
を有する明るいアクティブマトリックス型液晶表示装置
を実現できる。As described above, according to the present invention, the extraction wiring of the common electrode (common electrode) and the video signal electrode (source electrode) and the pixel electrode (drain electrode) are formed in different layers by the insulating film. A liquid crystal can be driven by generating an electric field parallel to the substrate surface without using a comb-shaped electrode, realizing a bright active matrix liquid crystal display device with a high manufacturing yield and a large pixel aperture ratio. it can.
【図１】本発明に係る液晶表示装置の第１の実施例の電
界無印加時の画素平面模式図。FIG. 1 is a schematic plan view of a pixel when no electric field is applied in a first embodiment of a liquid crystal display device according to the present invention.
【図２】本発明に係る液晶表示装置の第１の実施例の電
界無印加時の画素断面模式図。FIG. 2 is a schematic sectional view of a pixel when no electric field is applied in the first embodiment of the liquid crystal display device according to the present invention.
【図３】本発明に係る液晶表示装置の第１の実施例の電
界印加時の画素平面模式図。FIG. 3 is a schematic plan view of a pixel when an electric field is applied in the first embodiment of the liquid crystal display device according to the present invention.
【図４】本発明に係る液晶表示装置の第１の実施例の電
界印加時の画素断面模式図。FIG. 4 is a schematic sectional view of a pixel when an electric field is applied in the first embodiment of the liquid crystal display device according to the present invention.
【図５】本発明に係る液晶表示装置の第２の実施例の電
界無印加時の画素平面図。FIG. 5 is a plan view of a pixel when no electric field is applied in a second embodiment of the liquid crystal display device according to the present invention.
【図６】本発明に係る液晶表示装置の第３の実施例の電
界無印加時の画素平面図。FIG. 6 is a plan view of a pixel in the third embodiment of the liquid crystal display device according to the present invention when no electric field is applied.
【図７】本発明に係る液晶表示装置の第４の実施例の電
界無印加時の画素平面図。FIG. 7 is a pixel plan view of the fourth embodiment of the liquid crystal display device according to the present invention when no electric field is applied.
【図８】本発明に係る液晶表示装置の第５の実施例の電
界無印加時の画素平面図。FIG. 8 is a pixel plan view of the fifth embodiment of the liquid crystal display device according to the present invention when no electric field is applied.
【図９】本発明に係る液晶表示装置の第６の実施例の電
界無印加時の画素平面図。FIG. 9 is a pixel plan view of the sixth embodiment of the liquid crystal display device according to the present invention when no electric field is applied.
【図１０】本発明に係る液晶表示装置の第７の実施例の
電界無印加時の画素平面図。FIG. 10 is a plan view of a pixel in the seventh embodiment of the liquid crystal display device according to the present invention when no electric field is applied.
【図１１】本発明に係る液晶表示装置の第８の実施例の
電界無印加時の画素平面図。FIG. 11 is a plan view of a pixel when an electric field is not applied in an eighth embodiment of the liquid crystal display device according to the present invention.
【図１２】本発明に係る液晶表示装置の第８の実施例の
電界無印加時の画素断面図。FIG. 12 is a sectional view of a pixel of the eighth embodiment of the liquid crystal display device according to the present invention when no electric field is applied.
【図１３】本発明に係る液晶表示装置の第９の実施例の
電界無印加時の画素平面図。FIG. 13 is a pixel plan view of the ninth embodiment of the liquid crystal display device according to the present invention when no electric field is applied.
【図１４】本発明に係る液晶表示装置の第９の実施例の
電界無印加時の画素断面図。FIG. 14 is a pixel sectional view of the ninth embodiment of the liquid crystal display device according to the present invention when no electric field is applied.
【図１５】本発明に係る液晶表示装置の第１０の実施例
の電界無印加時の画素平面図。FIG. 15 is a pixel plan view of the tenth embodiment of the liquid crystal display device according to the present invention when no electric field is applied.
【図１６】本発明に係る液晶表示装置の第１０の実施例
の電界無印加時の画素断面図。FIG. 16 is a pixel cross-sectional view of the tenth embodiment of the liquid crystal display device according to the present invention when no electric field is applied.
【図１７】本発明に係る液晶表示装置の第１１の実施例
の電界無印加時の画素平面図。FIG. 17 is a plan view of a pixel when an electric field is not applied in an eleventh embodiment of the liquid crystal display device according to the present invention.
【図１８】本発明に係る液晶表示装置の第１１の実施例
の電界無印加時の画素断面図。FIG. 18 is a sectional view of a pixel of the eleventh embodiment of the liquid crystal display device according to the present invention when no electric field is applied.
【図１９】本発明に係る液晶表示装置の第１２の実施例
の電界無印加時の画素平面図。FIG. 19 is a plan view of a pixel of the twelfth embodiment of the liquid crystal display device according to the present invention when no electric field is applied.
【図２０】本発明に係る液晶表示装置の第１２の実施例
の電界無印加時の画素断面図。FIG. 20 is a pixel cross-sectional view of the twelfth embodiment of the liquid crystal display device according to the present invention when no electric field is applied.
【図２１】本発明に係る液晶表示装置の第１３の実施例
の電界無印加時の画素断面図。FIG. 21 is a sectional view of a pixel in a thirteenth embodiment of the liquid crystal display device according to the present invention when no electric field is applied.
【図２２】本発明に係る液晶表示装置の第１４の実施例
の電界無印加時の画素平面図。FIG. 22 is a pixel plan view of the fourteenth embodiment of the liquid crystal display device according to the present invention when no electric field is applied.
【図２３】本発明に係る液晶表示装置の第１４の実施例
の電界無印加時の画素断面図。FIG. 23 is a pixel cross-sectional view of the fourteenth embodiment of the liquid crystal display device according to the present invention when no electric field is applied.
【図２４】本発明に係る液晶表示装置の等価回路を示す
平面図。FIG. 24 is a plan view showing an equivalent circuit of the liquid crystal display device according to the present invention.
【図２５】本発明に係る液晶表示装置の表示部ＴＦＴマ
トリックス部の平面図。FIG. 25 is a plan view of a display section TFT matrix section of the liquid crystal display device according to the present invention.
【図２６】本発明に係る液晶表示装置のセル断面図。FIG. 26 is a sectional view of a cell of the liquid crystal display device according to the present invention.
１…ガラス基板、１０…ゲート電極、１４…ドレイン電
極、１５…ソース電極、１６…コモン電極、２０…ゲー
ト絶縁膜、２１…アルミナ膜、２２…五酸化タンタル
膜、２３…保護絶縁膜、２４…下地絶縁膜、３０…非晶
質シリコン膜、１０１…ゲート電極の引出端子、１４１
…ドレイン電極の引出端子、１６０…コモン電極の引出
配線、１６１…コモン側駆動電極、５０５…偏光板、５
０７…カラーフィルタ、５０８…対向基板、５１１…カ
ラーフィルタ保護膜、５１２…遮光用ブラックマトリッ
クス、５１３…液晶分子、ＯＲＩ１，ＯＲＩ２…配向制
御膜、ＳＬ…シール材、Ｃ１，Ｃ２，Ｃ３，Ｃ４，Ｃｓ
ｔ…付加容量、ＴＨ…スルーホール、Ｅ１…液晶駆動電
界。DESCRIPTION OF SYMBOLS 1 ... Glass substrate, 10 ... Gate electrode, 14 ... Drain electrode, 15 ... Source electrode, 16 ... Common electrode, 20 ... Gate insulating film, 21 ... Alumina film, 22 ... Tantalum pentoxide film, 23 ... Protective insulating film, 24 ... Underlying insulating film, 30... Amorphous silicon film, 101...
... Leader terminal of drain electrode, 160… leader wiring of common electrode, 161… drive electrode on common side, 505… polarizing plate, 5
07: color filter, 508: counter substrate, 511: color filter protective film, 512: black matrix for light shielding, 513: liquid crystal molecules, ORI1, ORI2: alignment control film, SL: sealing material, C1, C2, C3, C4 Cs
t: additional capacitance, TH: through hole, E1: liquid crystal driving electric field.
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特公 昭63−21907（ＪＰ，Ｂ１) 特表 平５−505247（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) G02F 1/1368 G02F 1/1343 ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-B-63-21907 (JP, B1) JP-T5-505247 (JP, A) (58) Fields surveyed (Int. Cl. 7 , DB name) G02F 1/1368 G02F 1/1343
Claims (9)
た液晶層とを有し、 前記一対の基板の一方の基板には、複数の走査信号電極
と、それらにマトリックス状に交差する複数の映像信号
電極と、これらの電極のそれぞれの交点に対応して形成
された複数の薄膜トランジスタとを有する液晶表示装置
であって、 前記複数の走査信号電極及び前記複数の映像信号電極で
囲まれるそれぞれの領域で共通電極と薄膜トランジスタ
に接続された画素電極とを有する画素が構成され、 前記共通電極は映像信号電極の伸びている方向とほぼ等
しい方向に伸びた部分と、走査信号電極に平行な方向に
隣接する画素の共通電極と接続するための引出配線とを
有し、 前記画素電極は映像信号電極の伸びている方向とほぼ等
しい方向に伸びた部分を有し、 前記画素電極の映像信号電極の伸びている方向とほぼ等
しい方向に伸びた部分及び前記共通電極の映像信号電極
の伸びている方向とほぼ等しい方向に伸びた部分はその
共通電極の引出配線よりも上層に形成されることを特徴
とする液晶表示装置。1. A liquid crystal display device comprising: a pair of substrates; and a liquid crystal layer sandwiched between the pair of substrates. One of the pair of substrates has a plurality of scanning signal electrodes and intersects them in a matrix. What is claimed is: 1. A liquid crystal display device comprising: a plurality of video signal electrodes; and a plurality of thin film transistors formed corresponding to intersections of these electrodes, wherein the liquid crystal display device is surrounded by the plurality of scanning signal electrodes and the plurality of video signal electrodes. A pixel having a common electrode and a pixel electrode connected to a thin film transistor is formed in each region, and the common electrode extends in a direction substantially equal to a direction in which the video signal electrode extends, and a pixel extending in a direction substantially parallel to the scanning signal electrode. A lead wire for connecting to a common electrode of a pixel adjacent in the direction, wherein the pixel electrode has a portion extending in a direction substantially equal to a direction in which the video signal electrode extends; The portion of the elementary electrode extending in the direction substantially equal to the direction in which the video signal electrode extends and the portion of the common electrode extending in the direction substantially equal to the direction in which the video signal electrode extends are above the common electrode lead-out wiring. A liquid crystal display device formed on a liquid crystal display.
号電極の伸びている方向とほぼ等しい方向に伸びた部分
はスルーホールを介して、その共通電極の引出配線と接
続されることを特徴とする液晶表示装置。2. The device according to claim 1, wherein a portion of said common electrode extending in a direction substantially equal to a direction in which said video signal electrode extends is connected to a lead wire of said common electrode via a through hole. Liquid crystal display device.
線は走査信号電極と同層に形成されることを特徴とする
液晶表示装置。3. The liquid crystal display device according to claim 1, wherein the lead wire of the common electrode is formed in the same layer as the scanning signal electrode.
号電極と垂直な方向に伸びた部分は対応する画素電極の
走査信号電極に対して垂直な方向に伸びた部分と同層に
形成されることを特徴とする液晶表示装置。4. The device according to claim 1, wherein a portion of the common electrode extending in a direction perpendicular to the scanning signal electrode is formed in the same layer as a portion of the corresponding pixel electrode extending in a direction perpendicular to the scanning signal electrode. A liquid crystal display device characterized in that:
号電極の伸びている方向とほぼ等しい方向に伸びた部分
は映像信号電極と同層に形成されることを特徴とする液
晶表示装置。5. The liquid crystal display device according to claim 4, wherein a portion of the common electrode extending in a direction substantially equal to a direction in which the video signal electrode extends is formed in the same layer as the video signal electrode.
号電極の伸びている方向とほぼ等しい方向に伸びた部分
の少なくとも一部は前記液晶層に接することを特徴とす
る液晶表示装置。6. The liquid crystal display device according to claim 1, wherein at least a part of a portion of the common electrode extending in a direction substantially equal to a direction in which the video signal electrode extends is in contact with the liquid crystal layer.
前記共通電極の少なくとも一部はその表面が自己酸化膜
または自己窒化膜で被覆された金属電極によって構成さ
れることを特徴とする液晶表示装置。7. The method according to claim 1, wherein
A liquid crystal display device, wherein at least a part of the common electrode is constituted by a metal electrode whose surface is covered with a self-oxidizing film or a self-nitriding film.
前記共通電極の引出配線と対応する画素電極とはその一
部において、絶縁膜を介して互いに重ね合わさり、この
重ね合わさった部分に付加容量が形成されることを特徴
とする液晶表示装置。8. The method according to claim 1, wherein
A liquid crystal display device, wherein a part of a lead electrode of the common electrode and a corresponding pixel electrode are overlapped with each other via an insulating film, and an additional capacitance is formed in the overlapped portion.
た液晶層とを有し、 前記一対の基板の一方の基板には、複数の走査信号電極
と、それらにマトリックス状に交差する複数の映像信号
電極と、これらの電極のそれぞれの交点に対応して形成
された複数の薄膜トランジスタとを有する液晶表示装置
であって、 前記複数の走査信号電極と前記複数の映像信号電極で囲
まれるそれぞれの領域で共通電極と薄膜トランジスタに
接続された画素電極を有する画素が構成され、 前記共通電極は、その共通電極の映像信号電極の伸びて
いる方向とほぼ等しい方向に伸びた部分と、走査信号電
極に対して平行な方向に隣接する画素の共通電極と接続
するための引出配線とを有し、 前記画素電極は前記共通電極の走査信号電極と垂直な方
向に伸びた部分を有し、 前記共通電極の引出配線は走査信号電極と同層に形成さ
れ、 前記共通電極の映像信号電極の伸びている方向とほぼ等
しい方向に伸びた部分は映像信号電極及び、前記画素電
極の映像信号電極の伸びている方向とほぼ等しい方向に
伸びた部分と同層であって、前記共通電極の引出配線と
は絶縁膜を介して異層に形成され、 前記共通電極の引出配線と前記共通電極の映像信号電極
の伸びている方向とほぼ等しい方向に伸びた部分はスル
ーホールを介して接続されることを特徴とする液晶表示
装置。9. A semiconductor device comprising: a pair of substrates; and a liquid crystal layer sandwiched between the pair of substrates. One of the pair of substrates has a plurality of scanning signal electrodes and intersects them in a matrix. What is claimed is: 1. A liquid crystal display device comprising: a plurality of video signal electrodes; and a plurality of thin film transistors formed corresponding to respective intersections of these electrodes, wherein the liquid crystal display device is surrounded by the plurality of scanning signal electrodes and the plurality of video signal electrodes. A pixel having a common electrode and a pixel electrode connected to the thin film transistor is formed in each region, and the common electrode has a portion extending in a direction substantially equal to a direction in which the video signal electrode of the common electrode extends, and a scanning signal. A lead wire for connecting to a common electrode of a pixel adjacent in a direction parallel to the electrode, wherein the pixel electrode has a portion extending in a direction perpendicular to a scanning signal electrode of the common electrode. The lead-out wiring of the common electrode is formed in the same layer as the scanning signal electrode, and a portion of the common electrode extending in a direction substantially equal to a direction in which the video signal electrode extends is a video signal electrode and a pixel electrode. In the same layer as the portion extending in the direction substantially equal to the direction in which the video signal electrode extends, the lead wiring of the common electrode is formed in a different layer via an insulating film, and the lead wiring of the common electrode and the lead wiring of the common electrode are formed in different layers. A liquid crystal display device wherein a portion of the common electrode extending in a direction substantially equal to a direction in which the video signal electrode extends is connected via a through hole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13641697A JP3282542B2 (en) | 1997-05-27 | 1997-05-27 | Active matrix type liquid crystal display |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13641697A JP3282542B2 (en) | 1997-05-27 | 1997-05-27 | Active matrix type liquid crystal display |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17882593A Division JP2701698B2 (en) | 1993-07-20 | 1993-07-20 | Liquid crystal display |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH1048672A JPH1048672A (en) | 1998-02-20 |
| JP3282542B2 true JP3282542B2 (en) | 2002-05-13 |
Family
ID=15174655
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13641697A Expired - Lifetime JP3282542B2 (en) | 1997-05-27 | 1997-05-27 | Active matrix type liquid crystal display |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3282542B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20000005858A (en) * | 1998-06-05 | 2000-01-25 | 카네코 히사시 | Liquid crystal display with wide viewing angle |
| JP2001305586A (en) * | 2000-02-15 | 2001-10-31 | Matsushita Electric Ind Co Ltd | Liquid crystal display device, pixel correction method thereof and driving method thereof |
| JP4667587B2 (en) * | 2000-12-01 | 2011-04-13 | 株式会社日立製作所 | Liquid crystal display device |
| KR100978370B1 (en) * | 2005-12-29 | 2010-08-30 | 엘지디스플레이 주식회사 | An array substrate for In-Plane switching mode LCD and method of fabricating of the same |
-
1997
- 1997-05-27 JP JP13641697A patent/JP3282542B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH1048672A (en) | 1998-02-20 |
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