JPH02305412A - Trimming method for thin film resistor - Google Patents
Trimming method for thin film resistorInfo
- Publication number
- JPH02305412A JPH02305412A JP1127094A JP12709489A JPH02305412A JP H02305412 A JPH02305412 A JP H02305412A JP 1127094 A JP1127094 A JP 1127094A JP 12709489 A JP12709489 A JP 12709489A JP H02305412 A JPH02305412 A JP H02305412A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- film resistor
- voltage
- trimming
- reference voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 65
- 238000009966 trimming Methods 0.000 title claims abstract description 51
- 238000000034 method Methods 0.000 title claims abstract description 17
- 238000012544 monitoring process Methods 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 description 3
- 101100008046 Caenorhabditis elegans cut-2 gene Proteins 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、半導体基板等に形成された薄膜抵抗体のト
リミング方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for trimming a thin film resistor formed on a semiconductor substrate or the like.
近年、アナログ・デジタル（Ａ／Ｄ）、デジタル・アナ
ログ（Ｄ／Ａ）コンバータなどがよく利用されるように
なってきた。これに伴い、これらコンバータに使用され
る半導体装置の抵抗相互間の相対精度を向上するために
、半導体基板上に形成された薄膜抵抗体をレーザビーム
等を用いて正確にトリミングを行うようにしている。In recent years, analog-to-digital (A/D) and digital-to-analog (D/A) converters have come into widespread use. Along with this, in order to improve the relative accuracy between resistors in semiconductor devices used in these converters, thin film resistors formed on semiconductor substrates are being trimmed accurately using laser beams, etc. There is.
従来のこの種の薄膜抵抗体のトリミング方法を第２図に
基づいて説明する。A conventional method for trimming a thin film resistor of this type will be explained with reference to FIG.
この薄膜抵抗体のトリミング方法では、第２図に示すよ
うに、Ｆｉ膜抵抗体１の両端に形成された電橋配線層３
の一端に定電流源４を接続し、電極配線層３間に電圧計
５を接続している。そして、定電流源４から薄膜抵抗体
ｌに一定電流を流し、薄膜抵抗体ｌの両端に発生する初
期の電圧を電圧計５で計測する。つぎに、薄膜抵抗体ｌ
に一定電流を流しながら、薄膜抵抗体ｌのトリミングラ
ンドｌａの電橋配線層３に最も近い位置の端から、薄膜
抵抗体ｌに流れる電流を斜めに切る方向に、レーザビー
ムを用いて切り込み２を入れ、トリミングを行っていく
。このとき、電橋配線Ｎ３間に発生する電圧を電圧計５
で監視しながらトリミングを行う、そして、電圧計５の
指示が所望する薄膜抵抗体ｌの抵抗値に対応した電圧値
になったときに、レーザビームの照射を停止してトリミ
ングを終了する。In this thin film resistor trimming method, as shown in FIG.
A constant current source 4 is connected to one end of the electrode wiring layer 3, and a voltmeter 5 is connected between the electrode wiring layers 3. Then, a constant current is passed through the thin film resistor l from the constant current source 4, and the initial voltage generated across the thin film resistor l is measured with the voltmeter 5. Next, thin film resistor l
While applying a constant current to the thin film resistor l, a laser beam is used to make a cut 2 from the edge of the trimming land la of the thin film resistor l closest to the electric bridge wiring layer 3 in a direction that diagonally cuts the current flowing through the thin film resistor l. Insert and trim. At this time, measure the voltage generated between the bridge wiring N3 with a voltmeter.
Trimming is performed while monitoring with , and when the voltage indicated by the voltmeter 5 reaches a voltage value corresponding to the desired resistance value of the thin film resistor l, the laser beam irradiation is stopped and the trimming is completed.
しかし、上述のような従来の薄膜抵抗体のトリミング方
法では、薄膜抵抗体ｌに切り込みを入れるたびごとに、
電圧計５の指示を監視しなければならず、作業時間が非
常に長くなり、また作業が煩雑になるという問題があっ
た。このため、作業時間を短縮するために電圧計５の測
定回数を減らすと、切り込み２が大きく入り過ぎること
があり、このような場合には所望する抵抗値に対応した
電圧値よりも大幅にずれた電圧値でトリミングを終了す
ることになり、薄膜抵抗体ｌの抵抗値が所望の値から大
幅にずれた値となって、トリミングの精度が悪くなると
いう問題があった。However, in the conventional thin film resistor trimming method as described above, each time a cut is made in the thin film resistor l,
There was a problem in that the reading from the voltmeter 5 had to be monitored, which increased the working time and made the work complicated. For this reason, if you reduce the number of measurements with the voltmeter 5 in order to shorten the work time, the notch 2 may become too large, and in such a case, the voltage value will deviate significantly from the voltage value corresponding to the desired resistance value. Trimming ends at a voltage value that has been set, and the resistance value of the thin film resistor l becomes a value that deviates significantly from the desired value, resulting in a problem that trimming accuracy deteriorates.
したがって、この発明の目的は、作業を簡単かつ迅速に
行うことができ、しかも精度の高い薄膜抵抗体のトリミ
ング方法を提供することである。Therefore, an object of the present invention is to provide a method for trimming a thin film resistor that can be easily and quickly performed and that has high accuracy.
この発明の薄膜抵抗体のトリミング方法は、薄膜抵抗体
の所望の抵抗値に対応した電圧値を基準電圧とし、薄膜
抵抗体に一定電流を流してトリミングランドをトリミン
グし、薄膜抵抗体の両端に発生する電圧と基準電圧とを
比較しその両端の電圧が基準電圧に達したときにトリミ
ングを停止することを特徴としている。The method for trimming a thin film resistor of the present invention uses a voltage value corresponding to a desired resistance value of the thin film resistor as a reference voltage, and supplies a constant current to the thin film resistor to trim the trimming land. It is characterized by comparing the generated voltage with a reference voltage and stopping trimming when the voltages at both ends reach the reference voltage.
この発明の方法では、薄膜抵抗体に一定電流を流してト
リミングランドをトリミングする。そして、薄膜抵抗体
の両端に発生する電圧を基準電圧と比較し、その両端の
電圧が基準電圧に達したときに、トリミングを停止する
。このとき、基準電圧は、薄膜抵抗体の所望する抵抗値
に対応した電圧値であるため、薄膜抵抗体の両端の電圧
が基準電圧に達したとき、すなわち薄膜抵抗体の抵抗値
が所望の抵抗値となったときに、トリミングが停止する
ことになる。In the method of this invention, a trimming land is trimmed by passing a constant current through a thin film resistor. Then, the voltage generated across the thin film resistor is compared with a reference voltage, and when the voltage across both ends reaches the reference voltage, trimming is stopped. At this time, the reference voltage is a voltage value corresponding to the desired resistance value of the thin film resistor, so when the voltage across the thin film resistor reaches the reference voltage, that is, the resistance value of the thin film resistor reaches the desired resistance value. When the value is reached, trimming will stop.
この発明の薄膜抵抗体のトリミング方法の一実施例を第
１図に基づいて説明する。An embodiment of the thin film resistor trimming method of the present invention will be described with reference to FIG.
この薄膜抵抗体のトリミング方法では、第１図に示すよ
うに、薄膜抵抗体１の両端に形成された電極配線層３間
に発生する電圧と基準電圧ｖ０とを比較し、電極配線層
３間の電圧が基準電圧■。In this thin film resistor trimming method, as shown in FIG. 1, the voltage generated between the electrode wiring layers 3 formed at both ends of the thin film resistor 1 is compared with a reference voltage v0, and The voltage is the reference voltage■.
に達したときに、トリミング停止信号を出力する比較器
６を設けている。基準電圧ｖ０は、所望する抵抗値に対
応した電圧値としている。その他の構成は、第２図に示
す従来の薄膜抵抗体のトリミング方法と同様であり、対
応部分には同一符号を付している。電圧計５は、電極配
線層３間に発生する電圧をモニタするために設けている
。A comparator 6 is provided which outputs a trimming stop signal when the trimming stop signal is reached. The reference voltage v0 is set to a voltage value corresponding to a desired resistance value. The rest of the structure is similar to the conventional thin film resistor trimming method shown in FIG. 2, and corresponding parts are given the same reference numerals. The voltmeter 5 is provided to monitor the voltage generated between the electrode wiring layers 3.
そして、定電流源４から薄膜抵抗体ｌに一定電流を流し
、電極配線層３間、すなわち薄膜抵抗体ｌの両端に発生
する初期の電圧を電圧計５で測定する。そして、薄膜抵
抗体１に一定電流を流しながら、第２図に示す従来の薄
膜抵抗体のトリミング方法と同様に、レーザビーム等に
よりトリミングランド１ａに切り込み２を入れ、トリミ
ングしていく。このとき、薄膜抵抗体！の抵抗値は、切
り込み２が入れられていくことにより徐々に増加し、薄
１漠抵抗体ｌの両端の電圧が上昇していく。Then, a constant current is passed through the thin film resistor l from the constant current source 4, and the initial voltage generated between the electrode wiring layers 3, that is, across the thin film resistor l is measured with the voltmeter 5. Then, while a constant current is flowing through the thin film resistor 1, a cut 2 is made in the trimming land 1a using a laser beam or the like, and trimming is performed in the same manner as in the conventional thin film resistor trimming method shown in FIG. At this time, a thin film resistor! The resistance value gradually increases as the notches 2 are made, and the voltage across the thin resistor l increases.
そして、この徐々に上昇する薄膜抵抗体ｌの両端の電圧
を比較器６が常時基準電圧■。と比較し、その両端の電
圧が基準電圧■。に達したとき、すなわち薄膜抵抗体１
の抵抗値が所望の抵抗値と等しくなったときに、比較器
６がトリミング停止信号を出力し、このトリミング停止
信号に応答してレーザビームの照射を停止し、トリミン
グを終了する。Then, the comparator 6 constantly converts the gradually rising voltage across the thin film resistor l to the reference voltage (2). The voltage at both ends is the reference voltage■. , that is, when the thin film resistor 1
When the resistance value becomes equal to the desired resistance value, the comparator 6 outputs a trimming stop signal, and in response to this trimming stop signal, laser beam irradiation is stopped and trimming is completed.
このように、この実施例の薄膜抵抗体のトリミング方法
では、薄膜抵抗体ｌの両端に発生する電圧を基準電圧Ｖ
、と比較し、薄膜抵抗体ｌの両端の電圧が基準電圧■。In this way, in the thin film resistor trimming method of this embodiment, the voltage generated across the thin film resistor l is set to the reference voltage V.
, the voltage across the thin film resistor l is the reference voltage ■.
に達したときに、トリミングを停止するようにしたので
、薄膜抵抗体１の抵抗値が所望の抵抗値と等しくなった
ときに、自動的にトリミングを終了させることができる
。したがって薄膜抵抗体ｌの両端の電圧を監視する必要
がないので、作業を節単にかつ迅速に行うことができ、
しかも薄膜抵抗体ｌの抵抗値が所望の値となるときにト
リミングを確実に停止させることができるようになり、
トリミングの精度を高くすることができる。Since the trimming is stopped when the resistance value of the thin film resistor 1 is reached, the trimming can be automatically ended when the resistance value of the thin film resistor 1 becomes equal to the desired resistance value. Therefore, there is no need to monitor the voltage across the thin film resistor l, so the work can be done easily and quickly.
Moreover, it is now possible to reliably stop trimming when the resistance value of the thin film resistor l reaches the desired value.
The precision of trimming can be increased.
また、この実施例において、基準電圧■。を所望する薄
膜抵抗体ｌの抵抗値に対応する電圧値よりも少し低い値
に設定しておき、所望する薄膜抵抗体ｌの抵抗値よりも
少し低い抵抗値で切り込み動作を終了させ、その後、第
１図に示すように、トリミングランドｌａにおいて切り
込みを入れても抵抗値があまり変化しない部位に少しづ
つ切り込み２′を入れ、薄膜抵抗体ｌの抵抗値の＠調整
を行うようにする。これにより、トリミングランド１ａ
の切り過ぎを確実に防止して、抵抗値をより高精度に設
定することができる。Also, in this embodiment, the reference voltage ■. is set to a value slightly lower than the voltage value corresponding to the desired resistance value of the thin film resistor l, the cutting operation is finished at a resistance value slightly lower than the desired resistance value of the thin film resistor l, and then, As shown in FIG. 1, the resistance value of the thin film resistor l is adjusted by making cuts 2' little by little in areas where the resistance value does not change much even if the cuts are made in the trimming land la. As a result, the trimming land 1a
It is possible to reliably prevent excessive cutting and set the resistance value with higher accuracy.
この発明の薄膜抵抗体のトリミング方法は、薄膜抵抗体
の所望の抵抗値に対応した電圧値を基準電圧とし、薄膜
抵抗体の両端に発生する電圧を基！１帆電圧と比較しそ
の両端の１［圧が基準電圧に達したときにトリミングを
停止するので、薄膜抵抗体の抵抗値が所望する抵抗値に
なったときに、トリミングを停止することができ、薄膜
抵抗体の両端に発生する電圧を監視する必要がなく、し
かも薄１１り抵抗体の抵抗値を所望の抵抗値に確実に設
定することができる。この結果、作業を簡単かつ迅速に
行うことができ、しかも精度の高いトリミングを１〒う
ことができるようになる。The thin film resistor trimming method of the present invention uses a voltage value corresponding to a desired resistance value of the thin film resistor as a reference voltage, and uses the voltage generated across the thin film resistor as the reference voltage. Trimming is stopped when the voltage at both ends of the voltage reaches the reference voltage compared to the 1 voltage, so trimming can be stopped when the resistance value of the thin film resistor reaches the desired resistance value. There is no need to monitor the voltage generated across the thin film resistor, and the resistance value of the thin film resistor can be reliably set to a desired resistance value. As a result, the work can be done easily and quickly, and moreover, trimming can be performed with high precision.
第１図はこの発明の薄膜抵抗体のトリミング方法の一実
施例の実施のための基本的な構成を示す概略回路図、第
２図は従来技術の基本的な構成を示す概略回路図である
。FIG. 1 is a schematic circuit diagram showing the basic configuration for carrying out an embodiment of the thin film resistor trimming method of the present invention, and FIG. 2 is a schematic circuit diagram showing the basic configuration of the prior art. .
Claims (1)
する電圧を監視しながらトリミングランドをトリミング
し、前記電圧が所望の抵抗値に対応した電圧値に達した
ときに前記トリミングを停止する薄膜抵抗体のトリミン
グ方法において、前記所望の抵抗値に対応した電圧値を
基準電圧とし、前記電圧と前記基準電圧とを比較し、前
記電圧が前記基準電圧に達したときに前記トリミングを
停止することを特徴とする薄膜抵抗体のトリミング方法
。Trimming the trimming land while flowing a constant current through the thin film resistor and monitoring the voltage generated across the thin film resistor, and stopping the trimming when the voltage reaches a voltage value corresponding to a desired resistance value. In a method for trimming a thin film resistor, a voltage value corresponding to the desired resistance value is used as a reference voltage, the voltage and the reference voltage are compared, and the trimming is stopped when the voltage reaches the reference voltage. A method for trimming a thin film resistor, characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1127094A JP2683277B2 (en) | 1989-05-19 | 1989-05-19 | Trimming method of thin film resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1127094A JP2683277B2 (en) | 1989-05-19 | 1989-05-19 | Trimming method of thin film resistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02305412A true JPH02305412A (en) | 1990-12-19 |
| JP2683277B2 JP2683277B2 (en) | 1997-11-26 |
Family
ID=14951438
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1127094A Expired - Lifetime JP2683277B2 (en) | 1989-05-19 | 1989-05-19 | Trimming method of thin film resistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2683277B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0482802U (en) * | 1990-11-29 | 1992-07-20 | ||
| US5559433A (en) * | 1993-02-04 | 1996-09-24 | Mitsubishi Denki Kabushiki Kaisha | Magnetic sensor device including apparatus for aligning a magnetoresistance element and a circuit board and a method of manufacturing the magnetoresistive device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61174701A (en) * | 1985-01-30 | 1986-08-06 | 日本電気株式会社 | Resistance measuring apparatus |
-
1989
- 1989-05-19 JP JP1127094A patent/JP2683277B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61174701A (en) * | 1985-01-30 | 1986-08-06 | 日本電気株式会社 | Resistance measuring apparatus |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0482802U (en) * | 1990-11-29 | 1992-07-20 | ||
| US5559433A (en) * | 1993-02-04 | 1996-09-24 | Mitsubishi Denki Kabushiki Kaisha | Magnetic sensor device including apparatus for aligning a magnetoresistance element and a circuit board and a method of manufacturing the magnetoresistive device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2683277B2 (en) | 1997-11-26 |
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