JP2683277B2 - Trimming method of thin film resistor - Google Patents
Trimming method of thin film resistorInfo
- Publication number
- JP2683277B2 JP2683277B2 JP1127094A JP12709489A JP2683277B2 JP 2683277 B2 JP2683277 B2 JP 2683277B2 JP 1127094 A JP1127094 A JP 1127094A JP 12709489 A JP12709489 A JP 12709489A JP 2683277 B2 JP2683277 B2 JP 2683277B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- film resistor
- trimming
- resistance value
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Parts Printed On Printed Circuit Boards (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、半導体基板等に形成された薄膜抵抗体の
トリミング方法に関するものである。The present invention relates to a method for trimming a thin film resistor formed on a semiconductor substrate or the like.
近年、アナログ・デジタル（A/D），デジタル・アナ
ログ（D/A）コンバータなどがよく利用されるようにな
ってきた。これに伴い、これらコンバータに使用される
半導体装置の抵抗相互間の相対精度を向上するために、
半導体基板上に形成された薄膜抵抗体をレーザビーム等
を用いて正確にトリミングを行うようにしている。In recent years, analog / digital (A / D) and digital / analog (D / A) converters have been widely used. Accordingly, in order to improve the relative accuracy between the resistors of the semiconductor devices used for these converters,
The thin film resistor formed on the semiconductor substrate is accurately trimmed by using a laser beam or the like.
従来のこの種の薄膜抵抗体のトリミング方法を第２図
に基づいて説明する。A conventional method of trimming a thin film resistor of this type will be described with reference to FIG.
この薄膜抵抗体のトリミング方法では、第２図に示す
ように、薄膜抵抗体１の両端に形成された電極配線層３
の一端に定電流源４を接続し、電極配線層３間に電圧計
５を接続している。そして、定電流源４から薄膜抵抗体
１に一定電流を流し、薄膜抵抗体１の両端に発生する初
期の電圧を電圧計５で計測する。つぎに、薄膜抵抗体１
に一定電流を流しながら、薄膜抵抗体１のトリミングラ
ンド1aの電極配線層３に最も近い位置の端から、薄膜抵
抗体１に流れる電流を斜めに切る方向に、レーザビーム
を用いて切り込み２を入れ、トリミングを行っていく。
このとき、電極配線層３間に発生する電圧を電圧計５で
監視しながらトリミングを行う。そして、電圧計５の指
示が所望する薄膜抵抗体１の抵抗値に対応した電圧値に
なったときに、レーザビームの照射を停止してトリミン
グを終了する。In this thin film resistor trimming method, as shown in FIG. 2, electrode wiring layers 3 formed on both ends of the thin film resistor 1 are used.
A constant current source 4 is connected to one end of the electrode, and a voltmeter 5 is connected between the electrode wiring layers 3. Then, a constant current is passed from the constant current source 4 to the thin film resistor 1, and the initial voltage generated across the thin film resistor 1 is measured by the voltmeter 5. Next, the thin film resistor 1
While a constant current is applied to the thin film resistor 1, a cut 2 is made by using a laser beam in a direction in which the current flowing through the thin film resistor 1 is obliquely cut from the end of the trimming land 1a closest to the electrode wiring layer 3. Insert and trim.
At this time, trimming is performed while monitoring the voltage generated between the electrode wiring layers 3 with the voltmeter 5. When the instruction from the voltmeter 5 reaches a voltage value corresponding to the desired resistance value of the thin film resistor 1, the laser beam irradiation is stopped and the trimming is finished.
しかし、上述のような従来の薄膜抵抗体のトリミング
方法では、薄膜抵抗体１に切り込みを入れるたびごと
に、電圧計５の指示を監視しなければならず、作業時間
が非常に長くなり、また作業が煩雑になるという問題が
あった。このため、作業時間を短縮するために電圧計５
の測定回数を減らすと、切り込み２が大きく入り過ぎる
ことがあり、このような場合には所望する抵抗値に対応
した電圧値よりも大幅にずれた電圧値でトリミングを終
了することになり、薄膜抵抗体１の抵抗値が所望の値か
ら大幅にずれた値となって、トリミングの精度が悪くな
るという問題があった。However, in the conventional thin film resistor trimming method as described above, the instruction of the voltmeter 5 has to be monitored every time a cut is made in the thin film resistor 1, resulting in an extremely long working time. There was a problem that the work became complicated. Therefore, in order to reduce the working time, the voltmeter 5
If the number of measurements of is reduced, the cut 2 may become too large. In such a case, the trimming will be finished at a voltage value greatly deviated from the voltage value corresponding to the desired resistance value, and the thin film There has been a problem that the resistance value of the resistor 1 becomes a value largely deviated from a desired value and the trimming accuracy is deteriorated.
したがって、この発明の目的は、作業を簡単かつ迅速
に行うことができ、しかも精度の高い薄膜抵抗体のトリ
ミング方法を提供することである。Therefore, an object of the present invention is to provide a method of trimming a thin film resistor, which can perform work easily and quickly and which is highly accurate.
この発明の薄膜抵抗体のトリミング方法は、薄膜抵抗
体に一定の電流を流して薄膜抵抗体の両端に発生する電
圧と基準電圧とを比較しながら薄膜抵抗体に付随するト
リミングランドをトリミングし、薄膜抵抗体の両端に発
生する電圧が基準電圧に達したときにトリミングを停止
する薄膜抵抗体のトリミング方法において、基準電圧を
所望する抵抗値より少し低い値に対応する電圧に設定
し、トリミングランドの薄膜抵抗体側寄りの位置に第１
の切り込みを入れてトリミングする第１の工程と、トリ
ミングランドの薄膜抵抗体側から離れた位置に第２の切
り込みを入れて抵抗値の微調整を行う第２の工程とを含
むことを特徴としている。The thin film resistor trimming method of the present invention is to trim a trimming land attached to the thin film resistor while comparing a voltage generated across the thin film resistor with a reference voltage by passing a constant current through the thin film resistor, In the method of trimming a thin film resistor, which stops the trimming when the voltage generated across the thin film resistor reaches the reference voltage, the trimming land is set by setting the reference voltage to a voltage slightly lower than the desired resistance value. At the position closer to the thin film resistor side of
And a second step of finely adjusting the resistance value by making a second notch at a position distant from the thin film resistor side of the trimming land. .
この発明の方法では、第１の工程で、基準電圧を所望
する抵抗値より少し低い値に対応する電圧に設定し、ト
リミングランドの薄膜抵抗体側寄りの位置に第１の切り
込みを入れてトリミングすることにより、トリミングラ
ンドを切り過ぎる心配のない粗いトリミングを行え、抵
抗値を所望値の近傍に素早く近づける。つぎの第２の工
程で、トリミングランドの薄膜抵抗体側から離れた位置
に第２の切り込みを入れて抵抗値の微調整を行うことに
より、切り込みの長さの割に抵抗値の変化が少なく、精
度の良い調整を行うことができる。In the method of the present invention, in the first step, the reference voltage is set to a voltage corresponding to a value slightly lower than the desired resistance value, and the first notch is made at a position near the thin film resistor side of the trimming land for trimming. As a result, rough trimming can be performed without fear of cutting the trimming land too much, and the resistance value can be quickly brought close to the desired value. In the next second step, by making a second cut at a position distant from the thin film resistor side of the trimming land and finely adjusting the resistance value, there is little change in the resistance value relative to the length of the cut, Accurate adjustment can be performed.
この発明の薄膜抵抗体のトリミング方法の一実施例を
第１図に基づいて説明する。One embodiment of the thin film resistor trimming method of the present invention will be described with reference to FIG.
この薄膜抵抗体のトリミング方法では、第１図に示す
ように、薄膜抵抗体１の両端に形成された電極配線層３
間に発生する電圧と基準電圧V0とを比較し、電極配線層
３間の電圧が基準電圧V0に達したとき、トリミング停止
信号を出力する比較器６を設けている。基準電圧V0は、
所望する抵抗値よりも少し低い値に対応する電圧値とし
ている。その他の構成は、第２図に示す従来の薄膜抵抗
体のトリミング方法と同様であり、対応部分には同一符
号を付している。電圧計５は、電極配線層３間に発生す
る電圧をモニタにするために設けている。In this thin film resistor trimming method, as shown in FIG. 1, electrode wiring layers 3 formed on both ends of the thin film resistor 1 are used.
A comparator 6 is provided which compares a voltage generated between them with the reference voltage V 0 and outputs a trimming stop signal when the voltage between the electrode wiring layers 3 reaches the reference voltage V 0 . The reference voltage V 0 is
The voltage value is set to a value slightly lower than the desired resistance value. Other configurations are the same as those of the conventional thin film resistor trimming method shown in FIG. 2, and corresponding parts are designated by the same reference numerals. The voltmeter 5 is provided to monitor the voltage generated between the electrode wiring layers 3.
そして、定電流源４から薄膜抵抗体１に一定電流を流
し、電極配線層３間，すなわち薄膜抵抗体１の両端に発
生する初期の電圧を電圧計５で測定する。そしてまず、
第１の工程として、基準電圧V0を、所望する薄膜抵抗体
１の抵抗値よりも少し低い値に対応する電圧値に設定し
ておき、薄膜抵抗体１に一定電流を流しながら、第２図
に示す従来の薄膜抵抗体のトリミング方法と同様に、レ
ーザビーム等によりトリミングランド1aに切り込み２を
入れ、トリミングしていく。このとき、薄膜抵抗体１の
抵抗値は、切り込み２が入れられていることにより徐々
に増加し、薄膜抵抗体１の両端の電圧が上昇していく。
そして、この徐々に上昇する薄膜抵抗体１の両端の電圧
を比較器６が常時基準電圧V0と比較し、その両端の電圧
が基準電圧V0に達したとき、すなわち薄膜抵抗体１の抵
抗値が所望の値より少し低い値になったときに、比較器
６がトリミング停止信号を出力し、このトリミング停止
信号に応答してレーザビームの照射を停止する。ここで
は、粗いトリミングで、トリミングランド1aの切り過ぎ
の心配もなく、所望する抵抗値の近傍に素早く近づける
ことができる。Then, a constant current is made to flow from the constant current source 4 to the thin film resistor 1, and the initial voltage generated between the electrode wiring layers 3, that is, at both ends of the thin film resistor 1 is measured by the voltmeter 5. And first,
In the first step, the reference voltage V 0 is set to a voltage value corresponding to a value slightly lower than the desired resistance value of the thin film resistor 1, and a second current is applied while a constant current is applied to the thin film resistor 1. Similar to the conventional method of trimming a thin film resistor shown in the figure, a notch 2 is made in a trimming land 1a by a laser beam or the like to perform trimming. At this time, the resistance value of the thin film resistor 1 gradually increases due to the notch 2, and the voltage across the thin film resistor 1 increases.
Then, comparing the thin film resistor comparator 6 the voltage across the 1 gradually rises constantly reference voltage V 0, when the voltage across it reaches the reference voltage V 0, i.e., the resistive thin film resistor 1 When the value becomes a little lower than the desired value, the comparator 6 outputs a trimming stop signal and stops the irradiation of the laser beam in response to the trimming stop signal. Here, with rough trimming, it is possible to quickly approach the vicinity of the desired resistance value without the concern of overcutting the trimming land 1a.
つぎに、第２の工程として、トリミングランド1aの薄
膜抵抗体１側から離れた位置に切り込み２′を入れてト
リミングしていく。ここでは、切り込み２′の長さの割
に抵抗値の変化が少ないトリミングがなされ、精度の良
い調整が行われる。Next, as a second step, the trimming land 1a is trimmed by making a notch 2'at a position away from the thin film resistor 1 side. Here, trimming is performed with little change in resistance value for the length of the cut 2 ', and accurate adjustment is performed.
このように、この実施例の薄膜抵抗体のトリミング方
法では、薄膜抵抗体１の両端に発生する電圧を基準電圧
V0と比較し、薄膜抵抗体１の両端の電圧が基準電圧V0に
達したときに、トリミングを停止する第１の工程におい
て、基準電圧V0を、薄膜抵抗体１の所望する抵抗値より
少し低い値に対応する電圧値に設定し、トリミングラン
ド1aの薄膜抵抗体１側寄りの位置に切り込み２（第１の
切り込み）を入れてトリミングすることにより、粗いト
リミングを所望する抵抗値より少し低い値で停止するた
め、切り過ぎの心配もなく所望する抵抗値の近傍に素早
く近づけられる。また、この１の工程では、自動的にト
リミングを停止するため、薄膜抵抗体１の両端の電圧を
監視する必要がなく、作業を簡単にかつ迅速に行うこと
ができる。つぎに、第２の工程で、トリミングランド1a
の薄膜抵抗体１側から離れた位置に切り込み２′（第２
の切り込み）を入れてトリミングすることにより、切り
込み２′の長さの割に抵抗値の変化が少なく、抵抗値の
微調整を精度よく行うことができる。このようにして、
薄膜抵抗体１の抵抗値を所望の抵抗値に迅速かつ高精度
に設定することができる。As described above, in the thin film resistor trimming method of this embodiment, the voltage generated across the thin film resistor 1 is set to the reference voltage.
Compared with V 0, when the voltage across the thin film resistor 1 has reached the reference voltage V 0, in a first step to stop the trimming, the reference voltage V 0, the desired resistance value of the thin film resistor 1 Set a voltage value corresponding to a slightly lower value, and make a notch 2 (first notch) at a position closer to the thin film resistor 1 side of the trimming land 1a to perform trimming, so that rough trimming is performed from a desired resistance value. Since it stops at a slightly lower value, it is possible to quickly approach the desired resistance value without worrying about overcutting. Further, in the first step, since the trimming is automatically stopped, it is not necessary to monitor the voltage across the thin film resistor 1, and the work can be performed easily and quickly. Next, in the second step, the trimming land 1a
Of the thin film resistor 1 side of the notch 2 '(second
By making a notch) and trimming, the resistance value does not change much for the length of the notch 2 ', and the fine adjustment of the resistance value can be performed accurately. In this way,
The resistance value of the thin film resistor 1 can be quickly and accurately set to a desired resistance value.
この発明の薄膜抵抗体のトリミング方法は、第１の工
程で、基準電圧を所望する抵抗値より少し低い値に対応
する電圧に設定し、トリミングランドの薄膜抵抗体側寄
りの位置に第１の切り込みを入れてトリミングすること
により、トリミングランドを切り過ぎる心配のない粗い
トリミングを行え、抵抗値を所望値の近傍に素早く近づ
けられる。つぎの第２の工程で、トリミングランドの薄
膜抵抗体側から離れた位置に第２の切り込みを入れて抵
抗値の微調整を行うことにより、切り込みの長さの割に
抵抗値の変化が少なく、精度の良い調整を行うことがで
きる。この結果、作業を簡単かつ迅速に行うことがで
き、しかも精度の高いトリミングを行うことができるよ
うになる。According to the method of trimming a thin film resistor of the present invention, in the first step, the reference voltage is set to a voltage corresponding to a value slightly lower than a desired resistance value, and the first cut is made at a position closer to the thin film resistor side of the trimming land. By putting in and trimming, it is possible to perform rough trimming without fear of cutting the trimming land too much, and to quickly bring the resistance value close to the desired value. In the next second step, by making a second cut at a position distant from the thin film resistor side of the trimming land and finely adjusting the resistance value, there is little change in the resistance value relative to the length of the cut, Accurate adjustment can be performed. As a result, the work can be performed easily and quickly, and more accurate trimming can be performed.
第１図はこの発明の薄膜抵抗体のトリミング方法の一実
施例の実施のための基本的な構成を示す概略回路図、第
２図は従来技術の基本的な構成を示す概略回路図であ
る。 １……薄膜抵抗体、1a……トリミングランド、２……切
り込み、V0……基準電圧FIG. 1 is a schematic circuit diagram showing a basic configuration for carrying out an embodiment of a method for trimming a thin film resistor of the present invention, and FIG. 2 is a schematic circuit diagram showing a basic configuration of a conventional technique. . 1 ...... thin film resistor, 1a ...... trimming land, 2 ...... notch, V 0 ...... reference voltage
Claims (1)
抵抗体の両端に発生する電圧と基準電圧とを比較しなが
ら前記薄膜抵抗体に付随するトリミングランドをトリミ
ングし、前記薄膜抵抗体の両端に発生する電圧が前記基
準電圧に達したときに前記トリミングを停止する薄膜抵
抗体のトリミング方法において、 前記基準電圧を所望する抵抗値より少し低い値に対応す
る電圧に設定し、前記トリミングランドの前記薄膜抵抗
体側寄りの位置に第１の切り込みを入れてトリミングす
る第１の工程と、 前記トリミングランドの前記薄膜抵抗体側から離れた位
置に第２の切り込みを入れて抵抗値の微調整を行う第２
の工程とを含むことを特徴とする薄膜抵抗体のトリミン
グ方法。1. A trimming land attached to the thin film resistor is trimmed while a constant current is applied to the thin film resistor to compare a voltage generated across the thin film resistor with a reference voltage. In the trimming method of the thin film resistor, which stops the trimming when the voltage generated across both ends reaches the reference voltage, the reference voltage is set to a voltage corresponding to a value slightly lower than a desired resistance value, and the trimming is performed. A first step of making a first notch in a position close to the thin film resistor side of the land and trimming; and a second notch in a position of the trimming land away from the thin film resistor side for fine adjustment of the resistance value Do the second
And a trimming method for a thin film resistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1127094A JP2683277B2 (en) | 1989-05-19 | 1989-05-19 | Trimming method of thin film resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1127094A JP2683277B2 (en) | 1989-05-19 | 1989-05-19 | Trimming method of thin film resistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02305412A JPH02305412A (en) | 1990-12-19 |
| JP2683277B2 true JP2683277B2 (en) | 1997-11-26 |
Family
ID=14951438
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1127094A Expired - Lifetime JP2683277B2 (en) | 1989-05-19 | 1989-05-19 | Trimming method of thin film resistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2683277B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH087602Y2 (en) * | 1990-11-29 | 1996-03-04 | 株式会社ユニシアジェックス | Resistor trimming device |
| JPH06232477A (en) * | 1993-02-04 | 1994-08-19 | Mitsubishi Electric Corp | Magnetic sensor apparatus and manufacture thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61174701A (en) * | 1985-01-30 | 1986-08-06 | 日本電気株式会社 | Resistance measuring apparatus |
-
1989
- 1989-05-19 JP JP1127094A patent/JP2683277B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02305412A (en) | 1990-12-19 |
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