JPH02304978A - Manufacture of solid image-pickup element - Google Patents
Manufacture of solid image-pickup elementInfo
- Publication number
- JPH02304978A JPH02304978A JP1125684A JP12568489A JPH02304978A JP H02304978 A JPH02304978 A JP H02304978A JP 1125684 A JP1125684 A JP 1125684A JP 12568489 A JP12568489 A JP 12568489A JP H02304978 A JPH02304978 A JP H02304978A
- Authority
- JP
- Japan
- Prior art keywords
- film
- spin
- forming
- glass
- solid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000007787 solid Substances 0.000 title 1
- 239000011521 glass Substances 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 17
- 229910052751 metal Inorganic materials 0.000 claims abstract description 15
- 239000002184 metal Substances 0.000 claims abstract description 15
- 238000010438 heat treatment Methods 0.000 claims abstract description 7
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 7
- 239000011229 interlayer Substances 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- 238000003384 imaging method Methods 0.000 claims description 7
- 238000006243 chemical reaction Methods 0.000 claims description 6
- 239000010410 layer Substances 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 230000001590 oxidative effect Effects 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 2
- 238000000059 patterning Methods 0.000 claims description 2
- 238000001039 wet etching Methods 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 abstract description 18
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 18
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 8
- 230000003647 oxidation Effects 0.000 abstract description 3
- 238000007254 oxidation reaction Methods 0.000 abstract description 3
- 238000000206 photolithography Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 238000011282 treatment Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000000779 depleting effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、スピンオングラス膜およびアルミニウム膜等
の金属膜を形成して熱処理を施す工程を含む固体撮像素
子の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method for manufacturing a solid-state imaging device, which includes a step of forming a spin-on glass film and a metal film such as an aluminum film and subjecting the film to heat treatment.
［従来の技術］
従来、固体撮像素子の受光部には、受光部から電荷転送
部への電荷読み出し特性を向上させるために、Ｎ−Ｐ接
合型フォトダイオードが用いられてきた。このＮ−Ｐ接
合型フォトダイオードではＮ−領域の表面を完全に空乏
化することにより、５ｔ−ＳｉＯ２界面にある表面準位
によって暗電流成分が多くなる。[Prior Art] Conventionally, an N-P junction photodiode has been used in the light receiving section of a solid-state image sensor in order to improve charge readout characteristics from the light receiving section to the charge transfer section. In this N-P junction photodiode, by completely depleting the surface of the N- region, the dark current component increases due to the surface states at the 5t-SiO2 interface.
この暗電流の低減方法として、Ｐｈ１ｌｉｐｓ Ｒｅｓ
、 Ｒｅｐｔｓ、 ２０ ｐｐ、５６８−５９４
’ＥＦＦＣＴＳ ＯＦ ＬＯＷ−ＴＥｈｌＰＥＲ
ＡＴＵＲＥ ＨＥＡＴ ＴＲＥＡＴＭＥＮＴＳ ＯＮ
Ｔ）ＩＥ ５ＵＲＦＡＣＥ ＰＲＯＰＥＲＴＩＥＳＯＦ
０ＸＩＤＩＺＥＤ ５ＩＬＩＣＯＮＪに発表された、
酸化膜上にアルミニウム膜等の金属膜を形成し熱処理を
施すことにより金属に酸化膜中の吸着水あるいはＯＨ基
と作用させて水素を発生させ５ｉ−９ｉ０２界面の表面
準位を減少せしめるという手法が有効であることが知ら
れている。As a method for reducing this dark current, Ph1lips Res
, Repts, 20 pp, 568-594
'EFFCTS OF LOW-TEhlPER
ATURE HEAT TREATMENTS ON
T) IE 5URFACE PROPERTIIESOF
0XIDIZED 5ILICONJ announced,
A method in which a metal film such as an aluminum film is formed on the oxide film and heat-treated to cause the metal to interact with adsorbed water or OH groups in the oxide film to generate hydrogen and reduce the surface level at the 5i-9i02 interface. is known to be effective.
第３区および第４図を参照して、この手法を用いた従来
の製造方法について説明する。A conventional manufacturing method using this method will be described with reference to Section 3 and FIG. 4.
第３図は、固体撮像素子の平面図であり、第４図（ａ）
〜（ｄ）は、そのＡ−Ａ’線断面における工程順を示す
断面図である。FIG. 3 is a plan view of the solid-state image sensor, and FIG. 4(a)
-(d) are sectional views showing the process order in the AA' line cross section.
まず、Ｎ型半導体基板１内にＰ型ウェル層２を形成した
後、光電変換部３と電荷転送部４となるＮ型領域５．６
およびチャネルストップ部７となるＰ型頭域８をそれぞ
れ選択的に形成し、Ｎ型半導体基板１に酸化処理を施し
て表面に第１のゲート酸化膜を成長させ、この第１のゲ
ート酸化膜の上にＣＶＤ法および写真蝕刻法により多結
晶シリコンからなる第１の転送ゲート電極１０を形成す
る。続いて、第１の転送ゲート電極１０をマスクとして
、第１のゲート酸化膜の一部を除去し、再度熱酸化処理
を施して露出したＮ型半導体基板１および第１の転送ゲ
ート電極１０のｆｆＩ囲に第２のゲート酸化膜１１を成
長させる。その後ＣＶＤ法および写真蝕刻法により多結
晶シリコンからなる第２の転送ゲート電極１２を前記第
２のゲート酸化膜１１上に形成する［第４図（ａ）］。First, after forming a P-type well layer 2 in an N-type semiconductor substrate 1, an N-type region 5.6 that will become a photoelectric conversion section 3 and a charge transfer section 4 is formed.
and a P-type head region 8 which will become a channel stop portion 7 are selectively formed, and a first gate oxide film is grown on the surface of the N-type semiconductor substrate 1 by oxidation treatment. A first transfer gate electrode 10 made of polycrystalline silicon is formed thereon by CVD and photolithography. Next, using the first transfer gate electrode 10 as a mask, a part of the first gate oxide film is removed, and thermal oxidation treatment is performed again to remove the exposed N-type semiconductor substrate 1 and the first transfer gate electrode 10. A second gate oxide film 11 is grown around ffI. Thereafter, a second transfer gate electrode 12 made of polycrystalline silicon is formed on the second gate oxide film 11 by CVD and photolithography [FIG. 4(a)].
次いで、全面にＣＶＤ法により層間絶縁膜１３を堆積し
、層間絶縁膜１３にコンタクトホールを開口した後、前
記層間絶縁膜１３上全面に第１のアルミニウム膜１４を
堆積し、これを写真蝕刻法によりバターニングして配線
部と遮光部を形成する［第４図（ｂ）］。Next, an interlayer insulating film 13 is deposited on the entire surface by the CVD method, a contact hole is opened in the interlayer insulating film 13, and then a first aluminum film 14 is deposited on the entire surface of the interlayer insulating film 13, and this is deposited by photolithography. Patterning is performed to form a wiring portion and a light shielding portion [FIG. 4(b)].
次に、第１のアルミニウム膜１４上を含む層間絶縁膜１
３上全面にプラズマＣＶＤ法により酸化１１１１５を堆
積し、続いてシリカ膜形成材料をスピン塗布しこれをベ
ーキングしてスピンオングラス膜１６を形成した後、全
面に第２のアルミニウム膜１７を堆積し、引き続きＮ２
とＮ２の混合ガス雰囲気中で約４００℃の温度にて、１
０分間程度の熱処理を行い、５ｉ−３ｉ０２界面におけ
る表面準位を減少させる［第４図（ｃ）］。Next, the interlayer insulating film 1 including the top of the first aluminum film 14 is
Oxide 11115 is deposited on the entire surface of 3 by plasma CVD method, and then a silica film forming material is spin-coated and baked to form a spin-on glass film 16, and then a second aluminum film 17 is deposited on the entire surface, Continue with N2
1 at a temperature of approximately 400°C in a mixed gas atmosphere of
A heat treatment is performed for about 0 minutes to reduce the surface states at the 5i-3i02 interface [FIG. 4(c)].
最後に、第２のアルミニウム膜１７を除去して固体撮像
素子の製造工程は終了する［第４図（ｄ）］。Finally, the second aluminum film 17 is removed to complete the manufacturing process of the solid-state image sensor [FIG. 4(d)].
［発明が解決しようとする課題］
上述した固体撮像素子の製造方法では、アルミニウム膜
のステップカバレッジを改善して暗電流低減効果を大き
くするためにスピンオングラス膜を形成しているが、こ
の膜は、一連の工程が終了した後に固体撮像素子上に第
４図（ｄ）に示すように凹レンズ形状に残される。その
なめ、光はこの膜で屈折され、電荷転送部に漏れ込むこ
とになる。従って、特に、高輝度被写体の場合には画面
上で垂直方向にスミアリングによる偽信号が発生し、映
像信号が著しく劣化する。[Problems to be Solved by the Invention] In the method for manufacturing the solid-state imaging device described above, a spin-on glass film is formed in order to improve the step coverage of the aluminum film and increase the dark current reduction effect. After a series of steps are completed, a concave lens shape is left on the solid-state image sensor as shown in FIG. 4(d). Therefore, light is refracted by this film and leaks into the charge transfer section. Therefore, especially in the case of a high-brightness subject, a false signal is generated due to smearing in the vertical direction on the screen, and the video signal is significantly degraded.
［課題を解決するための手段］
本発明による固体撮像素子の製造方法は、所要の拡散工
程、転送電極形成工程、層間絶縁膜形成工程、遮光膜お
よび配線層形成工程の各工程が終了した後に、次の各工
程を経るものである。[Means for Solving the Problems] The method for manufacturing a solid-state imaging device according to the present invention includes a method for manufacturing a solid-state imaging device in which after each of the necessary diffusion steps, transfer electrode formation steps, interlayer insulating film formation steps, light shielding film and wiring layer formation steps are completed, , which goes through the following steps.
■ 全面にＣＶＤ酸化膜、非単結晶シリコン膜およびス
ピンオングラス膜を順次形成する工程、■ その上全面
にアルミニウム膜等の金属膜を形成する工程、
■ 非酸化性雰囲気（Ｎ２ガス中、Ｎ２ガス中あるいは
Ｎ２、Ｎ２混合ガス中）中、比敦的低温（３５０〜４５
０℃）で熱処理する工程、■ 金属膜およびスピンオン
グラス膜をエツチング除去する工程。■ A process of sequentially forming a CVD oxide film, a non-single crystal silicon film, and a spin-on glass film on the entire surface, ■ A process of forming a metal film such as an aluminum film on the entire surface, ■ A non-oxidizing atmosphere (in N2 gas, N2 gas (in N2, N2 mixed gas) at relatively low temperatures (350 to 45
(1) a step of etching away the metal film and spin-on glass film;
［実施例コ
次に、本発明の実施例について７面を参照して説明する
。[Example 7] Next, an example of the present invention will be described with reference to page 7.
第１ ｍ （ａ ） 〜（ｄ ） 、第２図（ａ） 〜
（ｄ）は、本発明の一実施例の工程順を示すセル部の断
面図であって、それぞれ、第３図Ａ−Ａ’線、Ｂ−Ｂ’
線に沿った断面を示している。Fig. 1 m (a) - (d), Fig. 2 (a) -
(d) is a cross-sectional view of the cell part showing the process order of one embodiment of the present invention, and is a cross-sectional view of the cell part shown along lines AA' and BB' in FIG. 3, respectively.
A cross section along the line is shown.
まず、Ｎ型半導体基板１内にＰ型ウェル層２を形成し、
その後、光電変換部３と電荷転送部４となるＮ型領域５
．６およびチャネルストップ部７となるＰ型頭域８をそ
れぞれ選択的に形成する。First, a P-type well layer 2 is formed in an N-type semiconductor substrate 1,
After that, an N-type region 5 that becomes a photoelectric conversion section 3 and a charge transfer section 4 is formed.
．． 6 and a P-type head region 8 which becomes the channel stop portion 7 are selectively formed.
次に、Ｎ型半導体基板１を熱酸化処理して表面に第１の
ゲート酸化膜９を成長させ、この第１のゲート酸化膜９
の上にＣＶＤ法および写真蝕刻法により多結晶シリコン
から成る第１の転送ゲート電極１０を形成する。続いて
、第１の転送ゲート電ｆｆ１ｌｏをマスクとして第１の
ゲート酸化膜９の一部を除去し、再度熱処理を施して露
出したＮ型半導体基板１および第１の転送ゲート電極１
０の周囲に第２のゲート酸化膜１１を成長させる。その
後、ＣＶＤ法および写真蝕刻法により多結晶シリコンか
ら成る第２の転送ゲート電極１２を前記第２のゲート酸
化膜１１の上に形成する［第１図（ａ）、第２図（ａ）
］ 。Next, the N-type semiconductor substrate 1 is thermally oxidized to grow a first gate oxide film 9 on the surface.
A first transfer gate electrode 10 made of polycrystalline silicon is formed thereon by CVD and photolithography. Subsequently, a part of the first gate oxide film 9 is removed using the first transfer gate electrode ff1lo as a mask, and heat treatment is performed again to remove the exposed N-type semiconductor substrate 1 and the first transfer gate electrode 1.
A second gate oxide film 11 is grown around 0. Thereafter, a second transfer gate electrode 12 made of polycrystalline silicon is formed on the second gate oxide film 11 by CVD and photolithography [FIGS. 1(a) and 2(a)]
].
次に、全面にＣＶＤ法により層間絶縁膜１３を堆積し、
これにコンタクトホールを開口した後、層間絶縁膜１３
上全面に第１のアルミニウム膜１４を堆積し、これを写
真蝕刻法によりバターニングして配線部と遮光部とを形
成する［第１図（ｂ）、第２図（ｂ）］。Next, an interlayer insulating film 13 is deposited on the entire surface by CVD method,
After opening a contact hole in this, the interlayer insulating film 13
A first aluminum film 14 is deposited on the entire upper surface and patterned by photolithography to form a wiring portion and a light shielding portion [FIGS. 1(b) and 2(b)].
次に、第１のアルミニウム膜１４上を含む層間絶縁膜１
３上全面にプラズマＣＶＤ法により酸化膜１５を堆積し
た後、前記酸化膜１５上全面にスパッタリング法により
アモルファスシリコン膜１８を堆積し、続いて、シリカ
膜形成材料をスピン塗布しこれをベーキングすることに
よりスピンオングラス膜１６を形成する。その上全面に
第２のアルミニウム膜１７を堆積し、引き続きＮ２とＮ
２の混合ガス雰囲気中で約４００℃の温度にて１０分間
程度の熱処理を行う［第１図（Ｃ）、第２図 （Ｃ）
コ 。Next, the interlayer insulating film 1 including the top of the first aluminum film 14 is
After depositing an oxide film 15 on the entire surface of the oxide film 15 by a plasma CVD method, an amorphous silicon film 18 is deposited on the entire surface of the oxide film 15 by a sputtering method, and then a silica film forming material is spin-coated and baked. A spin-on glass film 16 is formed by this. A second aluminum film 17 is deposited on the entire surface, followed by N2 and N2.
Heat treatment is performed for about 10 minutes at a temperature of about 400°C in a mixed gas atmosphere of 2 [Figure 1 (C), Figure 2 (C)
Ko .
最後に、第２のアルミニウム膜１７を除去した後、前記
アモルファスシリコン膜１８をストッパとしてスピンオ
ングラス膜１６を除去し、続いてアモルファスシリコン
膜１８をウェット法によりエツチング除去する［第１図
（ｄ）、第２図（ｄ） コ 。Finally, after removing the second aluminum film 17, the spin-on glass film 16 is removed using the amorphous silicon film 18 as a stopper, and then the amorphous silicon film 18 is removed by wet etching [FIG. 1(d)] , Figure 2(d).
この実施例において、シリコン膜をスパッタリング法に
よって形成しているが、この方法によれば、比較的低温
でカバレッジ性の良好な成膜が可能である。また、この
膜はその下地の酸化膜１５とはエツチング性が異なるの
で、アモルファスシリコン膜１８をエツチングする際に
酸化膜１５の表面が荒らされることがない。なお、この
シリコン膜１８については、固体撮像素子の特性上特に
問題がない場合にはこれを除去しないでおくこともでき
る。In this example, the silicon film is formed by a sputtering method, which allows film formation with good coverage at a relatively low temperature. Further, since this film has a different etching property from the underlying oxide film 15, the surface of the oxide film 15 is not roughened when the amorphous silicon film 18 is etched. Note that this silicon film 18 may not be removed if there is no particular problem in terms of the characteristics of the solid-state image sensor.
また、上記実施例ではスピンオングラス膜を除去する際
のストッパとしてスパッタリング法により堆積したアモ
ルファスシリコン膜１８を用いていたが、これをスパッ
タリング法により堆積した多結晶シリコン膜に替えても
よい。Further, in the above embodiment, the amorphous silicon film 18 deposited by sputtering was used as a stopper when removing the spin-on glass film, but this may be replaced with a polycrystalline silicon film deposited by sputtering.
また、上記実施例では第２の金属膜としてアルミニウム
を用いていたが、これをアルミニウム合金膜等信の金属
膜に替えることができる。Further, although aluminum is used as the second metal film in the above embodiment, it can be replaced with a metal film such as an aluminum alloy film.
さらに、上述した説明では埋め込みチャネルを有する固
体撮像素子について説明したが、本発明はこれに限定さ
れるものではなく、表面チャネルを有する固体撮像素子
あるいはＭＯＳ型の固体撮像素子に対しても同様に適用
することができる。Further, in the above description, a solid-state image sensor having a buried channel has been described, but the present invention is not limited thereto, and the present invention can be similarly applied to a solid-state image sensor having a surface channel or a MOS type solid-state image sensor. Can be applied.
また、撮像素子上の光学的黒色部分においては、第２の
アルミニウム膜は除去しなくてもよい。Furthermore, the second aluminum film does not need to be removed in the optically black portion on the image sensor.
［発明の効果］
以上説明したように本発明は、ＣＶＤ酸化膜、非単結晶
シリコン膜、スピンオングラス膜および金属膜を順次形
成し、非酸化性雰囲気中で熱処理を施した後、金属膜お
よびスピンオングラス膜を除去するものであるので、本
発明によれば、スピンオングラス膜が凹レンズ作用を果
たすことがなくなりスミアリングを格段に低減させるこ
とができる。さらに、シリコン膜は、スピンオングラス
膜やＣＶＤ酸化膜に対してエツチングの選択性があるの
で、スピンオングラス膜あるいはシリコン膜をエツチン
グ除去する際に下地を荒らすことがない。[Effects of the Invention] As explained above, the present invention sequentially forms a CVD oxide film, a non-single-crystal silicon film, a spin-on glass film, and a metal film, and then heat-treats the film in a non-oxidizing atmosphere. Since the spin-on glass film is removed, according to the present invention, the spin-on glass film no longer acts as a concave lens, and smearing can be significantly reduced. Furthermore, since the silicon film has etching selectivity with respect to the spin-on glass film or the CVD oxide film, the underlying layer is not disturbed when the spin-on glass film or silicon film is etched away.
第３図は、固体撮像素子の平面国、第１図（ａ）乃至（
ｄ）、第２図（ａ）乃至（ｄ）は、それぞれ、第３図の
Ａ−Ａ’線、Ｂ−Ｂ’線に沿った断面における本発明の
一実施例の工程段階を示す断面図、第４図（ａ＞乃至（
ｄ）は、第３図のＡ−Ａ’線に沿った断面における従来
例の工程段階を示す断面図である。
１・・・Ｎ型半導体基板、 ２・・・Ｐ型ウェル層、
３・・・光電変換部、 ４・・・電荷転送部、 ５
・・・Ｎ型領域（光電変換部）、 ６・・・Ｎ型領域
（電荷転送部）、 ７・・・チャネルストップ部、８
・・・Ｐ型頭域（チャネルストップ部）、 ９・・・
第１のゲート酸化膜、 １０・・・第１の転送ゲート
電極、 １１・・・第２のゲート酸化膜、１２・・・
第２の転送ゲート電極、 １３・・・層間絶縁膜、
１４・・・第１のアルミニウム膜、１５・・・酸化
膜、 １６・・・スピンオングラス膜、１７・・・
第２のアルミニウム膜、 １８・・・アモルファス
シリコン膜。FIG. 3 shows the flat state of the solid-state image sensor, FIGS. 1(a) to (
d) and FIGS. 2(a) to (d) are cross-sectional views showing process steps of an embodiment of the present invention taken along the lines AA' and BB' in FIG. 3, respectively. , FIG. 4 (a> to (
d) is a sectional view showing the process steps of the conventional example in a cross section taken along the line AA' in FIG. 3; 1... N-type semiconductor substrate, 2... P-type well layer,
3... Photoelectric conversion section, 4... Charge transfer section, 5
... N type region (photoelectric conversion section), 6... N type region (charge transfer section), 7... Channel stop section, 8
...P-type head area (channel stop part), 9...
First gate oxide film, 10... First transfer gate electrode, 11... Second gate oxide film, 12...
second transfer gate electrode, 13... interlayer insulating film,
14... First aluminum film, 15... Oxide film, 16... Spin-on glass film, 17...
second aluminum film, 18... amorphous silicon film;
Claims (3)
領域から信号電荷の転送を受ける領域を形成する工程と
、前記半導体基板上にゲート絶縁膜およびゲート電極を
形成する工程と、前記ゲート電極を含むゲート絶縁膜上
に層間絶縁膜を形成する工程と、前記層間絶縁膜上に第
１の金属膜を堆積しこれをパターニングして配線および
遮光膜を形成する工程と、前記第１の金属膜上を含む層
間絶縁膜上全面に酸化膜、非単結晶シリコン膜およびス
ピンオングラス膜を順次形成する工程と、前記スピンオ
ングラス膜上全面に第２の金属膜を形成し非酸化性ガス
雰囲気中で熱処理を施す工程と、前記第２の金属膜およ
び前記スピンオングラス膜を除去する工程とを具備する
ことを特徴とする固体撮像素子の製造方法。(1) A step of forming a photoelectric conversion region and a region receiving signal charge transfer from the photoelectric conversion region on the surface of the semiconductor substrate, a step of forming a gate insulating film and a gate electrode on the semiconductor substrate, and a step of forming the gate electrode. a step of forming an interlayer insulating film on the gate insulating film, a step of depositing a first metal film on the interlayer insulating film and patterning it to form a wiring and a light shielding film, and a step of forming a wiring and a light shielding film on the first metal film. a step of sequentially forming an oxide film, a non-single-crystal silicon film, and a spin-on glass film on the entire surface of the interlayer insulating film including the top layer, and forming a second metal film on the entire surface of the spin-on glass film in a non-oxidizing gas atmosphere. A method for manufacturing a solid-state imaging device, comprising the steps of performing heat treatment and removing the second metal film and the spin-on glass film.
形成する請求項１記載の固体撮像素子の製造方法。(2) The method for manufacturing a solid-state imaging device according to claim 1, wherein the non-single crystal silicon film is formed by a sputtering method.
去する請求項１または２記載の固体撮像素子の製造方法
。(3) The method for manufacturing a solid-state imaging device according to claim 1 or 2, wherein the non-single crystal silicon film is removed by wet etching.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1125684A JPH07120780B2 (en) | 1989-05-19 | 1989-05-19 | Method of manufacturing solid-state image sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1125684A JPH07120780B2 (en) | 1989-05-19 | 1989-05-19 | Method of manufacturing solid-state image sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02304978A true JPH02304978A (en) | 1990-12-18 |
| JPH07120780B2 JPH07120780B2 (en) | 1995-12-20 |
Family
ID=14916120
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1125684A Expired - Lifetime JPH07120780B2 (en) | 1989-05-19 | 1989-05-19 | Method of manufacturing solid-state image sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07120780B2 (en) |
-
1989
- 1989-05-19 JP JP1125684A patent/JPH07120780B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07120780B2 (en) | 1995-12-20 |
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