JP2591183B2 - Method for manufacturing solid-state imaging device - Google Patents
Method for manufacturing solid-state imaging deviceInfo
- Publication number
- JP2591183B2 JP2591183B2 JP1247340A JP24734089A JP2591183B2 JP 2591183 B2 JP2591183 B2 JP 2591183B2 JP 1247340 A JP1247340 A JP 1247340A JP 24734089 A JP24734089 A JP 24734089A JP 2591183 B2 JP2591183 B2 JP 2591183B2
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- film
- region
- forming
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
【発明の詳細な説明】 ［産業上の利用分野］ 本発明は、固定撮像素子の製造方法に関し、特に、光
電変換領域以外の領域上に遮光膜を設けた固体撮像素子
の製造方法に関する。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a fixed image sensor, and more particularly, to a method for manufacturing a solid-state image sensor in which a light-shielding film is provided on a region other than a photoelectric conversion region.
［従来の技術］ 従来のこの種の固体撮像素子の製造方法は、第１図
（ａ）〜（ｄ）に示すものであった。[Prior Art] FIGS. 1 (a) to 1 (d) show a conventional method of manufacturing this type of solid-state imaging device.
ｐ型半導体基板１に、ｎ型不純物をドープして光電変
換領域２および電荷転送領域３を、また、ｐ型不純物を
ドープしてチャネルストップ領域４を形成する。半導体
基板上に膜厚800Åの熱酸化膜５を形成し、その上に膜
厚6000Åのポリシリコンを被着し、これをパターニング
して転送ゲート電極６を形成する〔第１図（ａ）〕。The p-type semiconductor substrate 1 is doped with an n-type impurity to form the photoelectric conversion region 2 and the charge transfer region 3, and the p-type impurity is doped to form a channel stop region 4. A thermal oxide film 5 having a thickness of 800.degree. Is formed on a semiconductor substrate, and a polysilicon film having a thickness of 6000.degree. Is deposited thereon and patterned to form a transfer gate electrode 6 (FIG. 1A). .
次に、層間絶縁膜として反応ガスにSiH4とO2を用い、
反応温度400℃の低温常圧CVD法により2000Å態度の膜厚
のCVD酸化膜７を形成する〔第１図（ｂ）〕。Next, using SiH 4 and O 2 as a reaction gas as an interlayer insulating film,
A CVD oxide film 7 having a thickness of 2000 ° is formed by a low-temperature normal-pressure CVD method at a reaction temperature of 400 ° C. (FIG. 1B).
その後、Si（OH）4を含むシリカフィルム形成材料を
スピナーで塗布しさらに800℃で熱処理を施して膜厚500
Åの塗布絶縁膜８を形成する〔第１図（ｃ）〕。Thereafter, a silica film-forming material containing Si (OH) 4 is applied by a spinner, and further subjected to a heat treatment at 800 ° C.
A coating insulating film 8 is formed (FIG. 1 (c)).
その上部にアルミニウム膜を蒸着し、これをパターニ
ングしてアルミニウム遮光膜９を形成する〔第１図
（ｄ）〕。An aluminum film is deposited thereon and patterned to form an aluminum light-shielding film 9 (FIG. 1 (d)).
この従来例において、塗布絶縁膜８を形成しているの
は、転送ゲート電極６の側面に形成されるCVD酸化膜７
の段差を軽減してアルミニウム遮光膜９の段切れを防止
するためである。In this conventional example, the coating insulating film 8 is formed by a CVD oxide film 7 formed on the side surface of the transfer gate electrode 6.
In order to prevent the aluminum light-shielding film 9 from being disconnected.
［発明が解決しようとする課題］ 上述した従来の固体撮像素子の製造方法では、半導体
基板とアルミニウム遮光膜９との間にCVD酸化膜７と塗
布絶縁膜とが介在しているので、遮光膜の端部において
半導体基板と遮光膜との間の距離が大きくなる。そのた
め、この隙間から漏れ込む迷光が増大して、解像度の低
下、スミアの増大の問題が起こる。[Problems to be Solved by the Invention] In the above-described conventional method for manufacturing a solid-state imaging device, since the CVD oxide film 7 and the coating insulating film are interposed between the semiconductor substrate and the aluminum light-shielding film 9, the light-shielding film The distance between the semiconductor substrate and the light-shielding film at the end of is increased. Therefore, the amount of stray light leaking from the gap increases, causing a problem of a decrease in resolution and an increase in smear.
［課題を解決するための手段］ 本発明の固体撮像素子の製造方法は、第１導電型の半
導体基板表面領域内に第２導電型の光電変換領域および
電荷転送領域を形成する工程と、前記基板上にゲート酸
化膜を介して転送ゲート電極を形成する工程と、全面に
低温常圧CVD法を用いて層間絶縁膜を形成する工程と、
塗布絶縁膜形成材料をスピン塗布しこれを焼きしめて塗
布絶縁膜を形成する工程と、塗布絶縁膜をエッチバック
して“液溜まり”部分以外の塗布絶縁膜をエッチング除
去する工程と、前記電荷転送領域上を遮光するアルミニ
ウム遮光膜を形成する工程とを具備している。[Means for Solving the Problems] A method for manufacturing a solid-state imaging device according to the present invention includes a step of forming a photoelectric conversion region and a charge transfer region of a second conductivity type in a surface region of a semiconductor substrate of a first conductivity type; A step of forming a transfer gate electrode on the substrate via a gate oxide film, and a step of forming an interlayer insulating film on the entire surface using a low-temperature normal-pressure CVD method,
A step of forming a coating insulating film by spin-coating and baking the coating insulating film forming material; a step of etching back the coating insulating film to etch away the coating insulating film other than a “liquid pool” portion; Forming an aluminum light-shielding film for shielding the region from light.
［実施例］ 次に、本発明の実施例について、図面を参照して説明
する。[Example] Next, an example of the present invention will be described with reference to the drawings.
第２図（ａ）、（ｂ）は、本発明の一実施例を説明す
るための半導体装置の断面図である。2 (a) and 2 (b) are cross-sectional views of a semiconductor device for explaining one embodiment of the present invention.
ｐ型半導体基板１に、ｎ型不純物をドープして光電変
換領域２および電荷転送領域３を、また、ｐ型不純物を
ドープしてチャネルストップ領域４を形成する。半導体
基板上に熱酸化膜５を形成し、その上にポリシリコンを
被着し、これをパターニングして転送ゲート電極６を形
成する。次に、層間絶縁膜として低温常圧CVD法によりC
VD酸化膜７を形成する。その後、シリカフィルム形成材
料をスピナーで塗布し熱処理を施して塗布絶縁膜８を形
成する〔第２図（ａ）〕。The p-type semiconductor substrate 1 is doped with an n-type impurity to form the photoelectric conversion region 2 and the charge transfer region 3, and the p-type impurity is doped to form a channel stop region 4. A thermal oxide film 5 is formed on a semiconductor substrate, polysilicon is deposited thereon, and this is patterned to form a transfer gate electrode 6. Next, as an interlayer insulating film,
A VD oxide film 7 is formed. Thereafter, a silica film forming material is applied by a spinner and subjected to a heat treatment to form a coating insulating film 8 (FIG. 2A).
その後、“液溜まり”部分の絶縁膜を除き、平坦部分
の塗布絶縁膜８をエッチング除去する。その上部にアル
ミニウム膜を蒸着し、これをパターニングしてアルミニ
ウム遮光膜９を形成する〔第２図（ｂ）〕。After that, the coating insulating film 8 in the flat portion is removed by etching except for the insulating film in the “liquid pool” portion. An aluminum film is deposited thereon and patterned to form an aluminum light-shielding film 9 (FIG. 2B).
この本発明の製造方法によれば、転送ゲート電極の側
面に形成されるCVD酸化膜７の段差を軽減しつつ遮光膜
９をCVD酸化膜７に密着させて形成することが可能にな
る。したがって、本発明によれば、アルミニウム遮光膜
の段切れを防止しつつ基板と遮光膜間の隙間から漏れ込
む迷光を低減することができる。According to the manufacturing method of the present invention, the light-shielding film 9 can be formed in close contact with the CVD oxide film 7 while reducing the level difference of the CVD oxide film 7 formed on the side surface of the transfer gate electrode. Therefore, according to the present invention, stray light leaking from the gap between the substrate and the light-shielding film can be reduced while preventing the aluminum light-shielding film from being disconnected.
［発明の効果］ 以下説明したように、本発明は、層間絶縁膜上に塗布
絶縁膜を形成し、“液溜まり”部分以外の塗布絶縁膜を
エッチング除去した後にアルミニウム遮光膜を形成する
ものであるので、本発明によれば、転送ゲート電極の側
面に形成される段差を解消しつつ、遮光膜をCVD酸化膜
に密着させて形成することが可能になる。したがって、
本発明によれば、遮光膜の段切れを防止することができ
るとともに、半導体基板と遮光膜間の隙間から漏れ込む
光を低減して、解像度およびスミア特性を改善すること
ができる。[Effects of the Invention] As described below, the present invention forms a coating insulating film on an interlayer insulating film, forms an aluminum light-shielding film after etching and removing the coating insulating film other than the “liquid pool” portion. Therefore, according to the present invention, it is possible to form a light shielding film in close contact with a CVD oxide film while eliminating a step formed on the side surface of the transfer gate electrode. Therefore,
According to the present invention, it is possible to prevent disconnection of the light-shielding film, reduce light leaking from a gap between the semiconductor substrate and the light-shielding film, and improve resolution and smear characteristics.
第１図（ａ）〜（ｄ）は、従来の半導体装置の断面図、
第２図（ａ）、（ｂ）は、本発明の一実施例を示す半導
体装置の断面図である。 １…ｐ型半導体基板、２…光電変換領域、３…電荷転送
領域、４…チャネルストップ領域、５…熱酸化膜、６…
転送ゲート電極、７…CVD酸化膜、８…塗布絶縁膜、９
…アルミニウム遮光膜。1A to 1D are cross-sectional views of a conventional semiconductor device.
2 (a) and 2 (b) are cross-sectional views of a semiconductor device showing one embodiment of the present invention. DESCRIPTION OF SYMBOLS 1 ... p-type semiconductor substrate, 2 ... photoelectric conversion area, 3 ... charge transfer area, 4 ... channel stop area, 5 ... thermal oxide film, 6 ...
Transfer gate electrode, 7: CVD oxide film, 8: coating insulating film, 9
... Aluminum light shielding film.
Claims (1)
よび電荷転送領域を形成する工程と、前記電荷転送領域
上に絶縁膜を介して転送ゲート電極を形成する工程と、
該転送ゲート電極上および前記光電変換領域上にCVD酸
化膜を堆積する工程と、該CVD酸化膜上に塗布絶縁膜形
成材料を塗布しこれに熱処理を施して塗布絶縁膜を形成
する工程と、前記塗布絶縁膜をエッチバックして平坦部
分の塗布絶縁膜をエッチング除去する工程と、前記電荷
転送領域を遮光する遮光膜を形成する工程とを含むこと
を特徴とする固体撮像素子の製造方法。A step of forming a photoelectric conversion region and a charge transfer region in a surface region of a semiconductor substrate; and a step of forming a transfer gate electrode on the charge transfer region via an insulating film.
Depositing a CVD oxide film on the transfer gate electrode and the photoelectric conversion region, and applying a coating insulating film forming material on the CVD oxide film and subjecting it to a heat treatment to form a coating insulating film; A method for manufacturing a solid-state imaging device, comprising: a step of etching back the applied insulating film to etch away the applied insulating film in a flat portion; and a step of forming a light shielding film for shielding the charge transfer region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1247340A JP2591183B2 (en) | 1989-09-22 | 1989-09-22 | Method for manufacturing solid-state imaging device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1247340A JP2591183B2 (en) | 1989-09-22 | 1989-09-22 | Method for manufacturing solid-state imaging device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03108761A JPH03108761A (en) | 1991-05-08 |
| JP2591183B2 true JP2591183B2 (en) | 1997-03-19 |
Family
ID=17161953
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1247340A Expired - Lifetime JP2591183B2 (en) | 1989-09-22 | 1989-09-22 | Method for manufacturing solid-state imaging device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2591183B2 (en) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63174359A (en) * | 1987-01-14 | 1988-07-18 | Hitachi Ltd | Solid-state image sensing device |
-
1989
- 1989-09-22 JP JP1247340A patent/JP2591183B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH03108761A (en) | 1991-05-08 |
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