JPH06209100A - Solid-state image pickup device and its manufacture - Google Patents
Solid-state image pickup device and its manufactureInfo
- Publication number
- JPH06209100A JPH06209100A JP5002962A JP296293A JPH06209100A JP H06209100 A JPH06209100 A JP H06209100A JP 5002962 A JP5002962 A JP 5002962A JP 296293 A JP296293 A JP 296293A JP H06209100 A JPH06209100 A JP H06209100A
- Authority
- JP
- Japan
- Prior art keywords
- film
- solid
- image pickup
- hydrogen
- pickup device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、固体撮像装置及びそ
の製造方法に関し、特に、暗電流を低減し、且つ分光特
性とスメアを改善した固体撮像装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state image pickup device and a method of manufacturing the same, and more particularly to a solid-state image pickup device having reduced dark current and improved spectral characteristics and smear.
【０００２】[0002]
【従来の技術】従来、この種の固体撮像装置としては、
例えば図３に示すような、インターライン型のＣＣＤ撮
像素子が知られている。この素子は、図３の断面図が表
すように、シリコン基板１に不純物を導入して成る電荷
転送領域２，光電変換領域３及びチャネルストップ領域
４が形成され、シリコン基板１表面には、シリコン酸化
膜で成るゲート絶縁膜５が形成されている。また、ゲー
ト絶縁膜５上には、ポリシリコンで成る転送電極６が形
成されており、転送電極６の表面は熱酸化によりシリコ
ン酸化膜７が形成されている。図中８は、ＰＳＧ膜であ
り、シリコン酸化膜７及びゲート絶縁膜５上に形成され
ている。このＰＳＧ膜８の上には、遮光用Ａｌ膜９が転
送電極６を覆うようにパターニングされ、さらに、全面
にプラズマＣＶＤ法にるシリコン窒化膜（以下、ＰＥ−
ＳｉＮ膜と称する）１０が形成されており、このＰＥ−
ＳｉＮ膜１０に含まれる水素を熱処理によって拡散させ
ることで撮像素子のノイズとなる暗電流の低減を図って
いる。2. Description of the Related Art Conventionally, as this type of solid-state image pickup device,
For example, an interline CCD image pickup device as shown in FIG. 3 is known. As shown in the cross-sectional view of FIG. 3, this device has a charge transfer region 2, a photoelectric conversion region 3 and a channel stop region 4 formed by introducing impurities into a silicon substrate 1, and a silicon substrate 1 has a silicon surface on the surface thereof. A gate insulating film 5 made of an oxide film is formed. A transfer electrode 6 made of polysilicon is formed on the gate insulating film 5, and a silicon oxide film 7 is formed on the surface of the transfer electrode 6 by thermal oxidation. In the figure, 8 is a PSG film, which is formed on the silicon oxide film 7 and the gate insulating film 5. A light shielding Al film 9 is patterned on the PSG film 8 so as to cover the transfer electrode 6, and a silicon nitride film (hereinafter, PE-) formed by a plasma CVD method is formed on the entire surface.
(Hereinafter referred to as SiN film) 10 is formed.
The hydrogen contained in the SiN film 10 is diffused by heat treatment to reduce the dark current that causes noise in the image sensor.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、上記し
た従来例においては、ＰＥ−ＳｉＮ膜の屈折率が２．０
程度と大きいため、干渉効果によって強く分光特性を生
じてしまう問題があった。また、図３に示すように、セ
ンサ部の端では、屈折によって斜め光を生じ、電荷転送
領域に直接光が入り込んで、画像にスジ状のノイズが生
じるスメアの原因となる問題があった。このような問題
の対策として、ＰＥ−ＳｉＮを、プラズマＣＶＤ法によ
るシリコン酸化膜に置き換える方法が考えられるが、シ
リコン酸化膜の屈折率が１．５程度と小さいため、上記
した分光特性の問題とスメア発生の問題を改善すること
ができるものの、シリコン酸化膜は水素を多く含有しな
いためセンサ領域を水素化する効果が弱くなり、撮像素
子のノイズとなる暗電流を低減させることができないと
いう問題がある。このように、水素を多く含有する膜は
ＰＥ−ＳｉＮ以外になかったため、上記した問題を解消
する手段が切望されていた。However, in the above-mentioned conventional example, the PE-SiN film has a refractive index of 2.0.
Since it is relatively large, there is a problem that strong spectral characteristics are generated due to the interference effect. Further, as shown in FIG. 3, at the end of the sensor portion, there is a problem that oblique light is generated by refraction and the light directly enters the charge transfer region, which causes smear that causes streak noise in the image. As a measure against such a problem, a method of replacing PE-SiN with a silicon oxide film by a plasma CVD method is conceivable. However, since the refractive index of the silicon oxide film is as small as about 1.5, the above-mentioned problem of the spectral characteristic is caused. Although the problem of smearing can be improved, since the silicon oxide film does not contain a large amount of hydrogen, the effect of hydrogenating the sensor region is weakened, and the dark current that causes noise in the image sensor cannot be reduced. is there. As described above, since there was no film other than PE-SiN containing a large amount of hydrogen, a means for solving the above-mentioned problems was earnestly desired.
【０００４】本発明は、上記した従来の問題点に着目し
て創案されたものであり、本発明の目的は、暗電流を低
減し、且つ分光特性とスメアを改善する固体撮像装置と
その製造方法を提供することにある。The present invention has been made in view of the above-mentioned conventional problems, and an object of the present invention is to reduce the dark current and to improve the spectral characteristics and smear, and the manufacture thereof. To provide a method.
【０００５】[0005]
【課題を解決するための手段】本出願の請求項１記載の
発明は、半導体基板に形成されたセンサ領域上に、屈折
率の小さい保護絶縁膜が積層され、且つ該センサ領域に
は水素が含有されていることを構成とする。According to a first aspect of the present invention, a protective insulating film having a small refractive index is laminated on a sensor region formed on a semiconductor substrate, and hydrogen is contained in the sensor region. Consists of being contained.
【０００６】本出願の請求項２記載の発明は、半導体基
板に形成されたセンサ領域上に、ＰＳＧ膜，ＳｉＯ2膜
を積層させ、センサ領域に水素を含有させたことを構成
とする。According to the second aspect of the present invention, the PSG film and the SiO 2 film are laminated on the sensor region formed on the semiconductor substrate, and hydrogen is contained in the sensor region.
【０００７】本出願の請求項３記載の発明は、半導体基
板に形成したセンサ領域上に屈折率の小さい保護絶縁膜
を形成した後、該保護絶縁膜上に水素含有膜を形成して
熱処理を施し、その後該水素含有膜を除去することを構
成とする。According to a third aspect of the present invention, a protective insulating film having a small refractive index is formed on a sensor region formed on a semiconductor substrate, a hydrogen-containing film is formed on the protective insulating film, and heat treatment is performed. And then removing the hydrogen-containing film.
【０００８】本出願の請求項４記載の発明は、上記水素
含有膜がプラズマＣＶＤ法で形成したＳｉＮ膜であるこ
とを構成とする。According to a fourth aspect of the present invention, the hydrogen-containing film is a SiN film formed by a plasma CVD method.
【０００９】[0009]
【作用】本出願の請求項１及び２記載の発明において
は、センサ領域上の保護絶縁膜が屈折率の小さい、例え
ばＰＳＧ膜とＳｉＯ2膜で構成されるため、干渉効果に
よって強く分光特性を生じてしまうのを防止する作用が
あり、センサ領域の端で屈折によって例えば電荷転送領
域に光が入り込むスメアが生じるのを防止する作用があ
る。また、センサ領域に水素が含有されているため、暗
電流を低減する作用がある。In the inventions according to claims 1 and 2 of the present application, since the protective insulating film on the sensor region is composed of a small refractive index, for example, a PSG film and a SiO 2 film, a strong spectral characteristic is obtained by the interference effect. This has the effect of preventing the occurrence of smear, and also has the effect of preventing the occurrence of a smear where light enters the charge transfer region due to refraction at the edge of the sensor region. Further, since the sensor region contains hydrogen, it has an effect of reducing dark current.
【００１０】本出願の請求項３及び４記載の発明におい
ては、センサ領域上に屈折率の小さい保護絶縁膜を形成
した状態で、熱処理により上層の水素含有膜、例えばプ
ラズマＳｉＮ膜からセンサ領域に水素が拡散する。この
ため、暗電流を低減することが可能となる。また、熱処
理後に水素含有膜を除去することにより、屈折率の小さ
い保護膜が残るため、分光特性，スメアを改善する作用
がある。In the inventions according to claims 3 and 4 of the present application, an upper hydrogen-containing film, for example, a plasma SiN film is transferred from the sensor region to the sensor region by heat treatment in a state where a protective insulating film having a small refractive index is formed on the sensor region. Hydrogen diffuses. Therefore, it is possible to reduce the dark current. Further, by removing the hydrogen-containing film after the heat treatment, a protective film having a small refractive index remains, which has an effect of improving spectral characteristics and smear.
【００１１】[0011]
【実施例】以下、本発明に係る固体撮像装置及びその製
造方法の詳細を、図面に示す実施例に基づいて説明す
る。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The details of the solid-state image pickup device and its manufacturing method according to the present invention will be described below with reference to the embodiments shown in the drawings.
【００１２】図１（Ａ），（Ｂ）及び図２（Ａ），
（Ｂ）は、本実施例の製造工程を示す要部断面図であ
る。先ず、図１（Ａ）に示すような構造を周知の技術に
より作製する。この構造は同図（Ａ）に示すように、シ
リコン基板１に、不純物導入により電荷転送領域２，セ
ンサ領域としての光電変換領域３，チャネルストップ領
域４が形成されている。また、シリコン基板１の表面に
は、熱酸化によってゲート絶縁膜５が形成されている。1A, 1B and 2A,
(B) is a fragmentary sectional view showing the manufacturing process of the present embodiment. First, a structure as shown in FIG. 1A is manufactured by a known technique. In this structure, as shown in FIG. 1A, a charge transfer region 2, a photoelectric conversion region 3 as a sensor region 3, and a channel stop region 4 are formed on a silicon substrate 1 by introducing impurities. A gate insulating film 5 is formed on the surface of the silicon substrate 1 by thermal oxidation.
【００１３】さらに、ゲート絶縁膜５上には、ポリシリ
コンで成る転送電極６がパターニングされ、この転送電
極６の表面にはシリコン酸化膜７が形成されている。そ
して、図中８は、基板全面を覆うＰＳＧ膜であり、この
ＰＳＧ膜８は半導体装置にとって有害なＮａイオン等を
捕捉する保護膜としての作用を有している。さらに、こ
のＰＳＧ膜８上には、電荷転送領域２に光が入射するの
を防止する遮光用Ａｌ膜９がパターニングされている。Further, a transfer electrode 6 made of polysilicon is patterned on the gate insulating film 5, and a silicon oxide film 7 is formed on the surface of the transfer electrode 6. In the figure, 8 is a PSG film that covers the entire surface of the substrate, and this PSG film 8 has a function as a protective film that traps Na ions and the like that are harmful to the semiconductor device. Further, on the PSG film 8, a light shielding Al film 9 for preventing light from entering the charge transfer region 2 is patterned.
【００１４】このように周知の技術により形成された構
造に対して、本実施例では、図１（Ｂ）に示すように、
プラズマＣＶＤ法により全面に、所望膜厚のＰＥ−Ｓｉ
Ｏ2膜（保護絶縁膜）１１を堆積させる。このＰＥ−Ｓ
ｉＯ2膜１１は、屈折率がＰＳＧ膜８と略同一で１．５
前後である。次に、図２（Ａ）に示すように、ＰＥ−Ｓ
ｉＯ2膜１１上に、同じくプラズマＣＶＤ法により全面
にＰＥ−ＳｉＮ膜１０を堆積させる。このＰＥ−ＳｉＮ
膜１０は、上記したように多くの水素（Ｈ）を含有する
水素含有膜である。In contrast to the structure formed by the well-known technique as described above, in this embodiment, as shown in FIG.
PE-Si of the desired film thickness on the entire surface by plasma CVD method
An O 2 film (protective insulating film) 11 is deposited. This PE-S
The iO 2 film 11 has the same refractive index as the PSG film 8 and has a refractive index of 1.5.
Before and after. Next, as shown in FIG. 2 (A), PE-S
Similarly, the PE-SiN film 10 is deposited on the entire surface of the iO 2 film 11 by the plasma CVD method. This PE-SiN
The film 10 is a hydrogen-containing film containing a large amount of hydrogen (H) as described above.
【００１５】このようにＰＥ−ＳｉＮ膜１０を堆積させ
た後、４００℃で１時間程度の熱処理を行い、ＰＥ−Ｓ
ｉＮ膜１０中に多量に含まれている水素を、ＰＥ−Ｓｉ
Ｏ2膜１１，ＰＳＧ膜８等を介してシリコン基板１側へ
拡散させる。この熱処理によって、シリコン基板１は充
分に水素化される。このように、シリコン基板１が水素
化されることにより、例えばシリコン結晶中の微小欠陥
に生じているダングリングボンドが水素で満たされ暗電
流の発生を抑制することが可能となる。After depositing the PE-SiN film 10 in this manner, a heat treatment is performed at 400 ° C. for about 1 hour to form PE-S.
Hydrogen contained in a large amount in the iN film 10 is converted into PE-Si.
It is diffused to the silicon substrate 1 side through the O 2 film 11, the PSG film 8 and the like. By this heat treatment, the silicon substrate 1 is sufficiently hydrogenated. As described above, by hydrogenating the silicon substrate 1, for example, dangling bonds generated in minute defects in the silicon crystal are filled with hydrogen, and it is possible to suppress generation of dark current.
【００１６】次に、上記したようにシリコン基板１の水
素化に寄与したＰＥ−ＳｉＮ膜１０を周知のエッチング
技術を用いて除去すると、図２（Ｂ）に示す構造とな
る。Next, the PE-SiN film 10 that has contributed to the hydrogenation of the silicon substrate 1 as described above is removed by using a known etching technique, resulting in the structure shown in FIG.
【００１７】本実施例は、このように、保護絶縁膜とし
て従来のＰＥ−ＳｉＮ膜より屈折率の低いＰＥ−ＳｉＯ
2膜を用いることで、光の干渉効果による分光特性を改
善できる。また、屈折率の低い膜を採用できるため、セ
ンサ領域（光電変換領域）の端部での屈折による斜め
光、即ち電荷転送領域２側へ屈折する光を生ずるのを防
止することができる。したがって、固体撮像装置にスメ
アが生じるのを防止できる。In this embodiment, as described above, PE-SiO having a lower refractive index than the conventional PE-SiN film is used as the protective insulating film.
By using two films, the spectral characteristics due to the light interference effect can be improved. Further, since a film having a low refractive index can be adopted, it is possible to prevent generation of oblique light due to refraction at the end of the sensor region (photoelectric conversion region), that is, light refracted toward the charge transfer region 2 side. Therefore, smear can be prevented from occurring in the solid-state imaging device.
【００１８】本実施例は、それ自体ではシリコン基板を
水素化する役割をはたさないＰＥ−ＳｉＯ2膜を使っ
て、シリコン水素化を達成している。このため、固体撮
像装置に暗電流が発生するのを抑制することができる。The present embodiment achieves silicon hydrogenation by using a PE-SiO 2 film which does not itself serve to hydrogenate a silicon substrate. Therefore, it is possible to suppress the generation of dark current in the solid-state imaging device.
【００１９】以上、実施例について説明したが、本発明
はこれに限定されるものではなく、構成の要旨の範囲で
各種変更が可能である。Although the embodiment has been described above, the present invention is not limited to this, and various changes can be made within the scope of the construction.
【００２０】例えば、上記実施例においては、ＰＳＧ膜
８上にＰＥ−ＳｉＯ2膜１１を形成したが、プラズマＣ
ＶＤ法以外の方法によるＳｉＯ2膜であってもよい。For example, in the above embodiment, the PE-SiO 2 film 11 was formed on the PSG film 8, but the plasma C
It may be a SiO 2 film formed by a method other than the VD method.
【００２１】また、上記実施例では水素含有膜としてＰ
Ｅ−ＳｉＮ膜１０を用いたが、水素を供給できる膜であ
れば、これに限定されるものではない。In the above embodiment, the hydrogen-containing film is made of P
Although the E-SiN film 10 is used, the film is not limited to this as long as it can supply hydrogen.
【００２２】なお、上記実施例は、インターライン型の
固体撮像装置に本発明を適用して説明したが、各種の固
体撮像装置に適用し得ることは勿論である。Although the above embodiment has been described by applying the present invention to an interline type solid-state image pickup device, it is needless to say that it can be applied to various solid-state image pickup devices.
【００２３】[0023]
【発明の効果】本出願の請求項１〜４記載の発明は、暗
電流を低減し、且つ分光特性とスメアを改善する効果が
ある。The inventions according to claims 1 to 4 of the present application are effective in reducing dark current and improving spectral characteristics and smear.
【図１】（Ａ）及び（Ｂ）は実施例に係る固体撮像装置
の製造工程を示す要部断面図。FIG. 1A and FIG. 1B are cross-sectional views of essential parts showing a manufacturing process of a solid-state imaging device according to an embodiment.
【図２】（Ａ）及び（Ｂ）は実施例に係る固体撮像装置
の製造工程を示す要部断面図。FIGS. 2A and 2B are cross-sectional views of a main part showing the manufacturing process of the solid-state imaging device according to the embodiment.
【図３】従来の固体撮像装置の要部断面図。FIG. 3 is a sectional view of a main part of a conventional solid-state imaging device.
１…シリコン基板 ２…電荷転送領域 ３…光電変換領域（センサ領域） ８…ＰＳＧ膜 １０…ＰＥ−ＳｉＮ膜 １１…ＰＥ−ＳｉＯ2膜1 ... silicon substrate 2 ... charge transfer region 3 ... photoelectric conversion region (sensor area) 8 ... PSG film 10 ... PE-SiN film 11 ... PE-SiO 2 film
Claims (4)
に、屈折率の小さい保護絶縁膜が積層され、且つ該セン
サ領域には水素が含有されていることを特徴とする固体
撮像装置。1. A solid-state imaging device, comprising: a protective insulating film having a small refractive index laminated on a sensor region formed on a semiconductor substrate; and the sensor region containing hydrogen.
上層のＳｉＯ2膜の２層でなる請求項１記載の固体撮像
装置。2. The protective insulating film is a lower PSG film,
The solid-state image pickup device according to claim 1, wherein the solid-state image pickup device comprises two layers of an upper SiO 2 film.
折率の小さい保護絶縁膜を形成した後、該保護絶縁膜上
に水素含有膜を形成して熱処理を施し、その後該水素含
有膜を除去することを特徴とする固体撮像装置の製造方
法。3. A protective insulating film having a small refractive index is formed on a sensor region formed on a semiconductor substrate, a hydrogen-containing film is formed on the protective insulating film, heat treatment is performed, and then the hydrogen-containing film is removed. A method for manufacturing a solid-state imaging device, comprising:
る請求項３記載の固体撮像装置の製造方法。4. The method for manufacturing a solid-state imaging device according to claim 3, wherein the hydrogen-containing film is a plasma SiN film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5002962A JPH06209100A (en) | 1993-01-12 | 1993-01-12 | Solid-state image pickup device and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5002962A JPH06209100A (en) | 1993-01-12 | 1993-01-12 | Solid-state image pickup device and its manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06209100A true JPH06209100A (en) | 1994-07-26 |
Family
ID=11543999
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5002962A Pending JPH06209100A (en) | 1993-01-12 | 1993-01-12 | Solid-state image pickup device and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06209100A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6060732A (en) * | 1998-06-24 | 2000-05-09 | Nec Corporation | Solid state image sensor and method for fabricating the same |
| US6147390A (en) * | 1997-04-07 | 2000-11-14 | Nec Corporation | Solid-state imaging device with film of low hydrogen permeability including openings |
| FR2805665A1 (en) * | 1999-12-28 | 2001-08-31 | Hyundai Electronics Ind | CMOS image sensor production, with reduced obscurity current, comprises forming insulating layer on semiconducting structure, forming dielectric layer, and diffusing hydrogen ions into dielectric layer |
| JP2002324899A (en) * | 2001-04-25 | 2002-11-08 | Sony Corp | Method for manufacturing solid-state image pickup element |
| JP2006040986A (en) * | 2004-07-23 | 2006-02-09 | Sony Corp | Solid-state imaging device and its manufacturing method |
| US8018012B2 (en) | 2008-06-09 | 2011-09-13 | Panasonic Corporation | Solid-state image sensor and manufacturing method thereof |
-
1993
- 1993-01-12 JP JP5002962A patent/JPH06209100A/en active Pending
Cited By (9)
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|---|---|---|---|---|
| US6147390A (en) * | 1997-04-07 | 2000-11-14 | Nec Corporation | Solid-state imaging device with film of low hydrogen permeability including openings |
| US6060732A (en) * | 1998-06-24 | 2000-05-09 | Nec Corporation | Solid state image sensor and method for fabricating the same |
| US6468826B1 (en) | 1998-06-24 | 2002-10-22 | Nec Corporation | Solid state image sensor using an intermediate refractive index antireflection film and method for fabricating the same |
| FR2805665A1 (en) * | 1999-12-28 | 2001-08-31 | Hyundai Electronics Ind | CMOS image sensor production, with reduced obscurity current, comprises forming insulating layer on semiconducting structure, forming dielectric layer, and diffusing hydrogen ions into dielectric layer |
| JP2001267547A (en) * | 1999-12-28 | 2001-09-28 | Hynix Semiconductor Inc | Mnufacturing method of cmos image sensor |
| JP2011129935A (en) * | 1999-12-28 | 2011-06-30 | Crosstek Capital Llc | Method of manufacturing cmos image sensor |
| JP2002324899A (en) * | 2001-04-25 | 2002-11-08 | Sony Corp | Method for manufacturing solid-state image pickup element |
| JP2006040986A (en) * | 2004-07-23 | 2006-02-09 | Sony Corp | Solid-state imaging device and its manufacturing method |
| US8018012B2 (en) | 2008-06-09 | 2011-09-13 | Panasonic Corporation | Solid-state image sensor and manufacturing method thereof |
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