JPH06204443A - Solid-state image sensing apparatus and manufacture thereof - Google Patents
Solid-state image sensing apparatus and manufacture thereofInfo
- Publication number
- JPH06204443A JPH06204443A JP5001444A JP144493A JPH06204443A JP H06204443 A JPH06204443 A JP H06204443A JP 5001444 A JP5001444 A JP 5001444A JP 144493 A JP144493 A JP 144493A JP H06204443 A JPH06204443 A JP H06204443A
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- film
- resist
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- Prior art date
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、固体撮像装置及びそ
の製造方法に関し、特に、高感度化及び低スミア化を実
現する固体撮像装置に係わる。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state image pickup device and a method of manufacturing the same, and more particularly to a solid-state image pickup device which realizes high sensitivity and low smear.
【０００２】[0002]
【従来の技術】従来の固体撮像装置は、図１０に示すよ
うな構造である。受光部上で開口する遮光用アルミ膜７
が形成され、その上に、プラズマＣＶＤ法によるＳｉＮ
膜８が堆積されている。さらに、上方にはマイクロレン
ズ１１が形成されている。このマイクロレンズ１１が光
を受光部上に集光させ、感光の向上が図られている。以
下、従来の固体撮像装置の製造方法を図６〜図１０を用
いて説明する。2. Description of the Related Art A conventional solid-state image pickup device has a structure as shown in FIG. Aluminum film 7 for light shielding that opens on the light receiving part
Is formed, and the SiN formed by the plasma CVD method is formed thereon.
The film 8 has been deposited. Further, a microlens 11 is formed above. The microlens 11 focuses the light on the light receiving portion to improve the photosensitivity. Hereinafter, a conventional method for manufacturing a solid-state imaging device will be described with reference to FIGS.
【０００３】周知の技術を用いて、シリコン基板１上に
ゲート絶縁膜２、転送電極としてのポリシリコン膜３、
シリコン酸化膜４、ポリシリコン膜５を形成する。次
に、これらの膜をパターニングして受光部を露出させ
る。そして、シリコン基板１内に、ｎ型、ｐ型の不純物
拡散領域をイオン注入法により形成する。次に、全面に
ＳｉＯ2膜６を形成して、図６に示す構造にする。Using a well-known technique, a gate insulating film 2 and a polysilicon film 3 as a transfer electrode are formed on a silicon substrate 1.
A silicon oxide film 4 and a polysilicon film 5 are formed. Next, these films are patterned to expose the light receiving part. Then, n-type and p-type impurity diffusion regions are formed in the silicon substrate 1 by the ion implantation method. Next, a SiO 2 film 6 is formed on the entire surface to form the structure shown in FIG.
【０００４】その後、ＳｉＯ2膜６上に、遮光用アルミ
膜７を堆積させる。そして、レジスト１２を塗布した
後、リソグラフィー技術を用いて、受光部上のレジスト
がなくなるようにパターニングすると、図７に示す構造
となる。このようにして残ったレジスト１２をマスクと
してドライエッチングを行い、受光部上の遮光用アルミ
膜７を除去する。このため、光が受光部へ達することが
可能となる。After that, a light-shielding aluminum film 7 is deposited on the SiO 2 film 6. Then, after the resist 12 is applied, patterning is performed by using a lithography technique so that the resist on the light receiving portion is removed, so that the structure shown in FIG. 7 is obtained. Dry etching is performed by using the resist 12 thus remaining as a mask to remove the light-shielding aluminum film 7 on the light receiving portion. Therefore, the light can reach the light receiving portion.
【０００５】次に、プラズマＣＶＤ法によりＰ−ＳｉＮ
膜８を全面に堆積させる（図９）。続いて、平坦化膜
９、染色膜１０、マイクロレンズ１１を順次形成し、図
１０に示すような固体撮像装置が完成する。Next, P-SiN is formed by the plasma CVD method.
The film 8 is deposited on the entire surface (FIG. 9). Then, the flattening film 9, the dyeing film 10, and the microlens 11 are sequentially formed, and the solid-state imaging device as shown in FIG. 10 is completed.
【０００６】[0006]
【発明が解決しようとする課題】上記した従来の固体撮
像装置にあっては、図１０に示すように、遮光用アルミ
膜７上の保護膜であるＰ−ＳｉＮ膜８が、受光部周辺の
遮光用アルミ膜７の切れ口の肩部で、オーバーハング形
状に被覆されている。このため、このオーバーハング形
状部分のＰ−ＳｉＮ膜８に入る光は、直進せずに、同図
に点線で示すように屈折、反射等を起こして転送領域
（Ｖレジスタ）側へ入る。このように光が転送領域に入
ると、偽似信号であるスミアを発生させる問題がある。
なお、Ｐ−ＳｉＮ膜８の水素は、ＳｉＯ2膜６を介して
シリコン基板１中に拡散し、シリコン基板１を水素化し
て暗電流を低減する作用があるため、シリコン基板１表
面に近い所にＰ−ＳｉＮ膜８を形成する必要がある。In the above-mentioned conventional solid-state image pickup device, as shown in FIG. 10, the P-SiN film 8 which is a protective film on the light-shielding aluminum film 7 is provided around the light receiving portion. The shoulder portion of the cut portion of the light-shielding aluminum film 7 is covered in an overhang shape. Therefore, the light entering the P-SiN film 8 in the overhang shape portion does not go straight, but is refracted and reflected as shown by the dotted line in the figure, and enters the transfer region (V register) side. When the light enters the transfer area as described above, there is a problem that smear which is a pseudo signal is generated.
The hydrogen of the P-SiN film 8 diffuses into the silicon substrate 1 through the SiO 2 film 6 to hydrogenate the silicon substrate 1 and reduce the dark current, so that it is close to the surface of the silicon substrate 1. Therefore, it is necessary to form the P-SiN film 8.
【０００７】この発明が解決しようとする課題は、水素
を含有する膜を形成するのにかかわらず、スミアを発生
しにくくするには、どのような手段を講じればよいかと
いう点にある。また、その他の課題としては、受光感度
を向上するには、どのような手段が必要であるかという
点にある。The problem to be solved by the present invention lies in what kind of means should be taken to prevent smear from occurring regardless of forming a film containing hydrogen. Further, another problem is what kind of means is required to improve the light receiving sensitivity.
【０００８】[0008]
【課題を解決するための手段】上記した課題を解決する
ものとして、この発明は、以下に説明するような固体撮
像装置及びその製造方法を用いる。In order to solve the above-mentioned problems, the present invention uses a solid-state image pickup device and a manufacturing method thereof as described below.
【０００９】この出願の請求項１記載の発明は、受光領
域上に形成された、遮光用メタルの開口部へ、自己整合
的にマイクロレンズが形成されていることを、構成とし
ている。The invention according to claim 1 of this application has a structure in which a microlens is formed in a self-aligning manner in the opening of the light shielding metal formed on the light receiving region.
【００１０】この出願の請求項２記載の発明は、受光領
域上に形成された、遮光用メタルの開口部へ、自己整合
的に、ＳｉＮで成るマイクロレンズが形成されているこ
とを、構成としている。The invention according to claim 2 of this application has a constitution in which a microlens made of SiN is formed in a self-aligning manner in the opening of the light shielding metal formed on the light receiving region. There is.
【００１１】この出願の請求項３記載の発明は、転送電
極と受光領域が形成された基体上に遮光用メタルを全面
に形成した後、該遮光用メタルを窓明けするためのレジ
ストをパターニングし、該レジストをマスクとしてエッ
チングを行って該遮光用メタルに開口部を形成し、その
後絶縁膜を堆積させた後リフトオフ法によりレジスト及
びレジスト上の絶縁膜を除去することを、構成としてい
る。In the invention according to claim 3 of this application, a light shielding metal is formed on the entire surface of the substrate on which the transfer electrode and the light receiving region are formed, and then a resist for patterning the light shielding metal is patterned. The resist is used as a mask to perform etching to form an opening in the light shielding metal, after which an insulating film is deposited and then the resist and the insulating film on the resist are removed by a lift-off method.
【００１２】この出願の請求項４記載の発明は、転送電
極と受光領域が形成された基体上に遮光用メタルを全面
に形成した後、該遮光用メタルを窓明けするためのレジ
ストをパターニングし、該レジストをマスクとしてエッ
チングを行って該遮光用メタルに開口部を形成し、その
後水素を含有する絶縁膜を堆積させた後リフトオフ法に
よりレジスト及びレジスト上の絶縁膜を除去すること
を、構成としている。According to a fourth aspect of the present application, a light shielding metal is formed on the entire surface of the substrate on which the transfer electrodes and the light receiving regions are formed, and then a resist for opening the light shielding metal is patterned. Forming an opening in the light shielding metal by using the resist as a mask, depositing an insulating film containing hydrogen after that, and removing the resist and the insulating film on the resist by a lift-off method. I am trying.
【００１３】この出願の請求項５記載の発明は、転送電
極と受光領域が形成された基体上に遮光用メタルを全面
に形成した後、該遮光用メタルを窓明けするためのレジ
ストをパターニングし、該レジストをマスクとしてエッ
チングを行って該遮断用メタルに開口部を形成し、その
後ＥＣＲ−ＣＶＤ法でＳｉＮ膜を堆積させた後リフトオ
フ法によりレジスト及びレジスト上のＳｉＮ膜を除去す
ることを、構成としている。According to a fifth aspect of the present application, a light-shielding metal is formed on the entire surface of a substrate on which transfer electrodes and light-receiving regions are formed, and then a resist for opening the light-shielding metal is patterned. Etching using the resist as a mask to form an opening in the blocking metal, and then depositing a SiN film by an ECR-CVD method and then removing the resist and the SiN film on the resist by a lift-off method. It is configured.
【００１４】[0014]
【作用】この出願の請求項１及び２記載の発明において
は、遮光用メタルの開口部に形成したマイクロレンズ
が、自己整合的に形成されているため、受光部の直上で
の集光効率を向上させ、スミアの発生を抑制する作用を
有する。特に、請求項２記載の発明においては、マイク
ロレンズがＳｉＮで形成されているため、シリコン基板
の水素化が達成できる。このため、暗電流を低減する作
用がある。In the inventions according to claims 1 and 2 of this application, since the microlenses formed in the openings of the light-shielding metal are formed in a self-aligning manner, the light-collecting efficiency immediately above the light-receiving portion is improved. It has the effect of improving and suppressing the occurrence of smear. In particular, in the invention of claim 2, since the microlens is formed of SiN, hydrogenation of the silicon substrate can be achieved. Therefore, it has an effect of reducing the dark current.
【００１５】この出願の請求項３〜５記載の発明におい
ては、リフトオフした後に、遮光用メタルの開口部内に
絶縁膜がマイクロレンズとして残る。このため、受光部
直上での集光効率が向上し、スミアの発生を抑制する作
用を奏する。また、マイクロレンズとなる絶縁膜が、Ｅ
ＣＲ−ＣＶＤ法で堆積されるＳｉＮ膜などの、水素を含
有する膜で構成される場合は、シリコン基板の水素化が
行われるため、暗電流を低減する作用がある。In the invention according to claims 3 to 5 of this application, the insulating film remains as a microlens in the opening of the light shielding metal after the lift-off. Therefore, the efficiency of light collection right above the light receiving portion is improved, and the effect of suppressing the occurrence of smear is exerted. In addition, the insulating film to be the microlens is
When the film is made of a film containing hydrogen, such as a SiN film deposited by the CR-CVD method, the silicon substrate is hydrogenated, which has the effect of reducing dark current.
【００１６】[0016]
【実施例】以下、この発明に係る固体撮像装置及びその
製造方法の詳細を図面に示す実施例に基づいて説明す
る。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The details of the solid-state image pickup device and its manufacturing method according to the present invention will be described below with reference to the embodiments shown in the drawings.
【００１７】先ず、周知の技術を用いて、シリコン基板
１上にゲート絶縁膜２、転送電極としてのポリシリコン
膜３、シリコン酸化膜４、ポリシリコン膜５を形成す
る。次に、これらの膜をパターニングして受光部を露出
させる。そして、シリコン基板１内に、ｎ型、ｐ型の所
望の不純物拡散領域をイオン注入法により形成する。そ
して、全面にＳｉＯ2膜６を形成して、図１に示す構造
にする。First, a gate insulating film 2, a polysilicon film 3 as a transfer electrode, a silicon oxide film 4, and a polysilicon film 5 are formed on a silicon substrate 1 by using a well-known technique. Next, these films are patterned to expose the light receiving part. Then, desired impurity diffusion regions of n-type and p-type are formed in the silicon substrate 1 by the ion implantation method. Then, a SiO 2 film 6 is formed on the entire surface to obtain the structure shown in FIG.
【００１８】次に、図２に示すように、ＳｉＯ2膜６上
に例えばスパッタ法で遮光用アルミ膜７を全面に形成す
る。そして、遮光用アルミ膜７上にレジスト１２を塗布
し、リソグラフィー技術を用いて、受光部上のレジスト
を除去する。Next, as shown in FIG. 2, a light-shielding aluminum film 7 is formed on the entire surface of the SiO 2 film 6 by, eg, sputtering. Then, a resist 12 is applied on the light-shielding aluminum film 7, and the resist on the light receiving portion is removed by using a lithography technique.
【００１９】このようにパターニングされたレジスト１
２をマスクとしてドライエッチングを行って、受光部上
の遮光用アルミ膜７を除去する。続いて、図３に示すよ
うに、レジスト１２をつけたままＥＣＲ−ＣＶＤ法によ
ってＥＣＲ−ＳｉＮ膜１３を１５０°Ｃ程度の低温で堆
積させる。ＥＣＲ−ＣＶＤ法により堆積されたＥＣＲ−
ＳｉＮ膜１３は、同図に示すように、レジスト１２の側
壁にわずかに付着するものの、レジスト１２上のもの
と、ＳｉＯ2膜６上のものとは段切れ状態となる。Resist 1 patterned in this way
Dry etching is performed using 2 as a mask to remove the light shielding aluminum film 7 on the light receiving portion. Subsequently, as shown in FIG. 3, the ECR-SiN film 13 is deposited at a low temperature of about 150 ° C. by the ECR-CVD method while the resist 12 is attached. ECR-ECR-deposited by CVD method
As shown in the figure, the SiN film 13 slightly adheres to the side wall of the resist 12, but the one on the resist 12 and the one on the SiO 2 film 6 are disconnected.
【００２０】次に、リフトオフ法として、レジスト剥離
液例えば発煙硝酸液に浸漬させることにより、レジスト
１２と、その上面及び側面に堆積されたＥＣＲ−ＳｉＮ
膜１３を除去する。これにより、図４に示す構造とな
り、受光部上に残ったＥＣＲ−ＳｉＮ膜１３はマイクロ
レンズとなる。Next, as a lift-off method, the resist 12 and the ECR-SiN deposited on the upper and side surfaces of the resist 12 are immersed in a resist stripping solution such as a fuming nitric acid solution.
The film 13 is removed. As a result, the structure shown in FIG. 4 is obtained, and the ECR-SiN film 13 remaining on the light receiving portion becomes a microlens.
【００２１】次に、図５に示すように、平坦化膜９、染
色膜１０マイクロレンズ１１を周知の技術で形成すれば
固体撮像装置が作成できる。Next, as shown in FIG. 5, the solid-state image pickup device can be prepared by forming the flattening film 9 and the dyeing film 10 and the microlenses 11 by a known technique.
【００２２】この実施例においては、リフトオフ法を用
いることにより、ＥＣＲ−ＳｉＮ膜１３を遮光用アルミ
膜７の開口部内に、自己整合的に形成することができ
る。このＥＣＲ−ＳｉＮ膜１３は、受光部直上でのマイ
クロレンズとなり、図５に示すように、上方のマイクロ
レンズ１１で集光された光を、受光部の脇方向に発散し
ないようにしている。このため、固体撮像置にスミアが
発生するのを防止する。また、集光効率が高くなるた
め、感度を向上させることができる。In this embodiment, by using the lift-off method, the ECR-SiN film 13 can be formed in the opening of the light shielding aluminum film 7 in a self-aligned manner. The ECR-SiN film 13 serves as a microlens directly above the light receiving portion, and as shown in FIG. 5, prevents the light condensed by the upper microlens 11 from diverging in the side direction of the light receiving portion. Therefore, smear is prevented from occurring in the solid-state imaging device. Moreover, since the light collection efficiency is increased, the sensitivity can be improved.
【００２３】以上、実施例について説明したが、この発
明は、これに限定されるものではなく、各種の固体撮像
装置及びその製造方法に適用することができる。Although the embodiments have been described above, the present invention is not limited to this, and can be applied to various solid-state imaging devices and manufacturing methods thereof.
【００２４】例えば、上記実施例においては、遮光用メ
タルとしてアルミニウムを用いたがこれに限定されるも
のではない。For example, in the above embodiment, aluminum was used as the light shielding metal, but the light shielding metal is not limited to this.
【００２５】また、自己整合的に形成されるマイクロレ
ンズは、ＥＣＲ−ＳｉＮの他、プラズマ−ＣＶＤによる
Ｐ−ＳｉＮ等の水素を含有する材料膜を用いて形成して
もよい。Further, the self-aligned microlenses may be formed by using a material film containing hydrogen such as P-SiN by plasma-CVD in addition to ECR-SiN.
【００２６】さらに、遮光用メタルを用いた固体撮像装
置であれば、他の構造のものにもこの発明を適用するこ
とができる。Further, the present invention can be applied to other structures as long as it is a solid-state image pickup device using a light shielding metal.
【００２７】またさらに、遮光用メタルの開口部に形成
する絶縁膜はリフトオフ法以外の方法で自己整合的に形
成することも勿論可能である。Further, it is of course possible to form the insulating film formed in the opening of the light shielding metal in a self-aligned manner by a method other than the lift-off method.
【００２８】[0028]
【発明の効果】以上の説明から明らかなように、この出
願の請求項１及び２記載の発明によれば、固体撮像装置
の感度を向上させ、スミアを改善させる効果がある。As is apparent from the above description, the inventions according to claims 1 and 2 of this application have the effects of improving the sensitivity of the solid-state imaging device and improving smear.
【００２９】また、この出願の請求項３〜５記載の発明
によれば、上記効果に加えて、工程数の増加を抑える効
果がある。このため、製造プロセスを簡単で、且つ低コ
ストにする効果がある。According to the inventions described in claims 3 to 5 of the present application, in addition to the above effects, there is an effect of suppressing an increase in the number of steps. Therefore, there is an effect that the manufacturing process is simple and the cost is low.
【図１】本発明の実施例を示す工程断面図。FIG. 1 is a process sectional view showing an embodiment of the present invention.
【図２】本発明の実施例を示す工程断面図。FIG. 2 is a process sectional view showing an embodiment of the present invention.
【図３】本発明の実施例を示す工程断面図。FIG. 3 is a process sectional view showing an embodiment of the present invention.
【図４】本発明の実施例を示す工程断面図。FIG. 4 is a process sectional view showing an embodiment of the present invention.
【図５】本発明の実施例を示す工程断面図。FIG. 5 is a process sectional view showing an embodiment of the present invention.
【図６】従来例を示す工程断面図。FIG. 6 is a process sectional view showing a conventional example.
【図７】従来例を示す工程断面図。FIG. 7 is a process sectional view showing a conventional example.
【図８】従来例を示す工程断面図。FIG. 8 is a process sectional view showing a conventional example.
【図９】従来例を示す工程断面図。FIG. 9 is a process sectional view showing a conventional example.
【図１０】従来例を示す工程断面図。FIG. 10 is a process sectional view showing a conventional example.
【符号の説明】 ７…遮光用アルミ膜 １２…レジスト １３…ＥＣＲ−ＳｉＮ膜[Explanation of Codes] 7 ... Light-shielding aluminum film 12 ... Resist 13 ... ECR-SiN film
Claims (5)
の開口部へ、自己整合的にマイクロレンズが形成されて
いることを特徴とする固体撮像装置。1. A solid-state image pickup device, wherein a microlens is formed in a self-aligning manner in an opening of a light-shielding metal formed on a light receiving region.
項１記載に係る固体撮像装置。2. The solid-state imaging device according to claim 1, wherein the microlens is made of SiN.
に遮光用メタルを全面に形成した後、該遮光用メタルを
窓明けするためのレジストをパターニングし、該レジス
トをマスクとしてエッチングを行って該遮光用メタルに
開口部を形成し、その後絶縁膜を堆積させた後リフトオ
フ法によりレジスト及びレジスト上の絶縁膜を除去する
ことを特徴とする固体撮像装置の製造方法。3. A light-shielding metal is formed on the entire surface of a substrate on which transfer electrodes and light-receiving regions are formed, a resist for opening a window of the light-shielding metal is patterned, and etching is performed using the resist as a mask. A method of manufacturing a solid-state image pickup device, comprising: forming an opening in the light shielding metal; then depositing an insulating film; then removing the resist and the insulating film on the resist by a lift-off method.
載に係る固体撮像装置の製造方法。4. The method for manufacturing a solid-state imaging device according to claim 3, wherein the insulating film contains hydrogen.
れるＳｉＮ膜である請求項３記載に係る固体撮像装置の
製造方法。5. The method for manufacturing a solid-state imaging device according to claim 3, wherein the insulating film is a SiN film deposited by an ECR-CVD method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5001444A JPH06204443A (en) | 1993-01-08 | 1993-01-08 | Solid-state image sensing apparatus and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5001444A JPH06204443A (en) | 1993-01-08 | 1993-01-08 | Solid-state image sensing apparatus and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06204443A true JPH06204443A (en) | 1994-07-22 |
Family
ID=11501616
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5001444A Pending JPH06204443A (en) | 1993-01-08 | 1993-01-08 | Solid-state image sensing apparatus and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06204443A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100244295B1 (en) * | 1997-03-13 | 2000-02-01 | 김영환 | Solid state image sensing device and manufacturing method thereof |
| US8110885B2 (en) | 2004-09-03 | 2012-02-07 | Canon Kabushiki Kaisha | Solid state imaging device comprising hydrogen supply film and antireflection film |
| WO2019003681A1 (en) * | 2017-06-29 | 2019-01-03 | ソニーセミコンダクタソリューションズ株式会社 | Solid-state image capture element and image capture device |
-
1993
- 1993-01-08 JP JP5001444A patent/JPH06204443A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100244295B1 (en) * | 1997-03-13 | 2000-02-01 | 김영환 | Solid state image sensing device and manufacturing method thereof |
| US8110885B2 (en) | 2004-09-03 | 2012-02-07 | Canon Kabushiki Kaisha | Solid state imaging device comprising hydrogen supply film and antireflection film |
| WO2019003681A1 (en) * | 2017-06-29 | 2019-01-03 | ソニーセミコンダクタソリューションズ株式会社 | Solid-state image capture element and image capture device |
| CN110770907A (en) * | 2017-06-29 | 2020-02-07 | 索尼半导体解决方案公司 | Solid-state imaging element and imaging device |
| US11362122B2 (en) | 2017-06-29 | 2022-06-14 | Sony Semiconductor Solutions Corporation | Solid-state imaging element and imaging apparatus |
| CN110770907B (en) * | 2017-06-29 | 2023-10-24 | 索尼半导体解决方案公司 | Solid-state imaging element and imaging device |
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