JPH0221659A - Solid-state image pick-up device - Google Patents
Solid-state image pick-up deviceInfo
- Publication number
- JPH0221659A JPH0221659A JP63170620A JP17062088A JPH0221659A JP H0221659 A JPH0221659 A JP H0221659A JP 63170620 A JP63170620 A JP 63170620A JP 17062088 A JP17062088 A JP 17062088A JP H0221659 A JPH0221659 A JP H0221659A
- Authority
- JP
- Japan
- Prior art keywords
- film
- opening
- aluminum
- photoshielding
- etching process
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 claims abstract description 7
- 238000003384 imaging method Methods 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 10
- 229910052782 aluminium Inorganic materials 0.000 abstract description 10
- 238000000034 method Methods 0.000 abstract description 9
- 238000005530 etching Methods 0.000 abstract description 7
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 7
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 abstract description 4
- 230000035945 sensitivity Effects 0.000 abstract description 4
- 239000011229 interlayer Substances 0.000 abstract description 2
- 239000000463 material Substances 0.000 abstract description 2
- 238000001020 plasma etching Methods 0.000 abstract description 2
- 238000004544 sputter deposition Methods 0.000 abstract description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 abstract 2
- 239000006185 dispersion Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 37
- 239000010410 layer Substances 0.000 description 8
- 239000012535 impurity Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 210000004709 eyebrow Anatomy 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000013039 cover film Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は固体撮像装置に関し、特にＣＣＤ型イメージセ
ンサに関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a solid-state imaging device, and particularly to a CCD type image sensor.
従来の固体撮像装置に於て、光電変換を行うホトダイオ
ード部以外は光遮蔽膜を配し、信号転送ラインには光電
変換された信号電荷のみが転送されるようになされであ
る。この従来例を図面を参照に説明する。In a conventional solid-state imaging device, a light-shielding film is provided in areas other than the photodiode section that performs photoelectric conversion, so that only the photoelectrically converted signal charges are transferred to the signal transfer line. This conventional example will be explained with reference to the drawings.
第３図は固体撮像装置の１つであるＣＣＤ型のイメージ
センサの１絵素部の半導体チップの断面図を表わす。図
中１はＮ型シリコン基板、２はＰウェル不純物層、３は
チャネルストッパでＰ＋型不純物層、４はホトダイオー
ドのＮ型不純物層、５は埋込みチャネル型ＣＣＤのＮウ
ェル不純物層、６は酸化シリコン膜（ゲート酸化膜と多
結晶シリコンゲートと熱酸化膜）、８は眉間絶縁膜、９
はアルミニウムからなる光遮蔽膜、１０はカバー絶縁膜
（ＣＶＤ酸化シリコン膜）を表わす。FIG. 3 shows a cross-sectional view of a semiconductor chip of one pixel portion of a CCD type image sensor, which is one type of solid-state imaging device. In the figure, 1 is an N-type silicon substrate, 2 is a P-well impurity layer, 3 is a channel stopper and is a P+-type impurity layer, 4 is an N-type impurity layer of a photodiode, 5 is an N-well impurity layer of a buried channel type CCD, and 6 is an oxidation layer. Silicon film (gate oxide film, polycrystalline silicon gate, and thermal oxide film), 8 is the eyebrow insulation film, 9
10 represents a light shielding film made of aluminum, and 10 represents a cover insulating film (CVD silicon oxide film).
従来遮蔽膜っけ図に示すようにほぼ断面が矩形状に加工
されている。さらに上部のカバー絶縁膜１０をプラズマ
ＣＶＤ法等で成長させると、光遮蔽膜９のエツジでもつ
上がり部１０．ができる。As shown in the conventional shielding film diagram, the cross section is processed into a substantially rectangular shape. Further, when the upper cover insulating film 10 is grown by a plasma CVD method or the like, a rising portion 10 at the edge of the light shielding film 9. I can do it.
上述した従来の固体撮像装置は、光電変換素子上方の開
口を決める光遮蔽膜の端部にカバー絶縁膜のもり上り部
を有し、その形状もばらついていて不定なので、入射光
がその部分で散乱される度合に各絵素間でばらつきを生
じ感度むらが発生する欠点がある。The above-mentioned conventional solid-state imaging device has a raised part of the cover insulating film at the end of the light shielding film that defines the aperture above the photoelectric conversion element, and the shape of the raised part varies and is irregular, so that the incident light does not reach that part. There is a drawback that the degree of scattering varies between picture elements, resulting in uneven sensitivity.
本発明の目的はカバー絶縁膜に起因する感度むらのない
固体撮像装置を提供することにある。An object of the present invention is to provide a solid-state imaging device that is free from sensitivity unevenness caused by a cover insulating film.
本発明の固体撮像装置は、光電変換素子の上方に設けら
れた光遮蔽膜の開口の形状が上方に向けて広くなってい
るというものである。In the solid-state imaging device of the present invention, the shape of the opening of the light shielding film provided above the photoelectric conversion element becomes wider upward.
次に、本発明の実施例について図面を参照して説明する
。Next, embodiments of the present invention will be described with reference to the drawings.
第１図は本発明の一実施例の主要部を示す半導体チップ
の断面図である。FIG. 1 is a sectional view of a semiconductor chip showing the main parts of an embodiment of the present invention.
この実施例は、光電変換素子であるＰＮ接合ホトダイオ
ードのＮ型不純物層４の上方に設けられた光遮蔽膜９の
開口１３の形状が上方に向けて広くなっている（光遮蔽
膜９にテーパ部１４が設けられている）というものであ
る。In this embodiment, the shape of the opening 13 of the light shielding film 9 provided above the N-type impurity layer 4 of the PN junction photodiode, which is a photoelectric conversion element, is widened upward (the light shielding film 9 is tapered). 14).
次に、この実施例の製造方法について説明す・る。Next, the manufacturing method of this example will be explained.
第２図（ａ）、（ｂ）は実施例の製造方法を説明するた
めの工程順に配置した半導体チップの断面図である。FIGS. 2(a) and 2(b) are cross-sectional views of semiconductor chips arranged in the order of steps for explaining the manufacturing method of the embodiment.
まず第２図（ａ）に示すように、従来と同様に眉間絶縁
膜８を形成後、光遮蔽膜のアルミニウム膜９′をスパッ
タ法で成長させ、その後５０℃の温水中に浸すことによ
り多孔質の酸化アルミニウム膜１１を厚さ３００ｎｍ成
長させる。ここでこの酸化アルミニウム膜１１はアルミ
ニウム膜９′を等方性エツチング法でエツチングする際
に同時にエツチングされ、しかもアルミニウムよりもエ
ツチングレートの速い膜であればＡ２０３膜以外の他の
膜でもよい。次に、ホトダイオードの開口部を規定すべ
く、ホトレジスト材をパターニングしてホトレジストマ
スク１２を形成する。First, as shown in FIG. 2(a), after forming an insulating film 8 between the eyebrows in the same manner as before, an aluminum film 9' as a light shielding film is grown by sputtering, and then immersed in hot water at 50°C to form a porous film. A high quality aluminum oxide film 11 is grown to a thickness of 300 nm. Here, this aluminum oxide film 11 may be any film other than the A203 film as long as it is etched at the same time as the aluminum film 9' is etched by the isotropic etching method and has a faster etching rate than aluminum. Next, the photoresist material is patterned to form a photoresist mask 12 to define the opening of the photodiode.
しかる後第２図（ｂ）に示すようにホット・リン酸液に
よる等方性エツチング法により、アルミニウム膜９′を
所定の深さまでエツチングし、ついで同じホトレジスト
マスク１２を用いて反応性プラズマエッチ法等の異方性
エツチング手法を用いて残存するアルミニウム膜９′を
エツチングし第１の構造を得る。Thereafter, as shown in FIG. 2(b), the aluminum film 9' is etched to a predetermined depth by an isotropic etching method using a hot phosphoric acid solution, and then a reactive plasma etching method is performed using the same photoresist mask 12. The remaining aluminum film 9' is etched using an anisotropic etching technique such as etching to obtain a first structure.
なお、この上からカバー絶縁膜をつけてもよい。その場
合、光遮蔽膜のエツジが鈍角になっているので従来例の
ようなもつ上がり部はできない
〔発明の効果〕
以上説明したように本発明は光遮蔽膜の開口の形状が上
方に向けて広くなっているので、従来例のようにそのエ
ツジ部に鋭角部を有しないのでカバー膜を被覆しても不
安定なもり上り部が発生せず各光電変換素子の感度ばら
つきを低減し、高性能画質が得られる効果がある。Note that a cover insulating film may be applied from above. In that case, since the edges of the light shielding film are obtuse, there is no raised part as in the conventional example. [Effects of the Invention] As explained above, the present invention has a shape in which the opening of the light shielding film is directed upward. Because it is wide, it does not have sharp edges unlike the conventional example, so even if it is covered with a cover film, unstable rising parts do not occur, reducing sensitivity variations of each photoelectric conversion element, and achieving high This has the effect of providing high performance image quality.
ル不鈍物層、３・・・チャネルストッパ ４・・・Ｎ型
不純物層、５・・・Ｎウェル不純物層、６・・・酸化シ
リコン膜、７・・・多結晶シリコンゲート、８・・・層
間絶縁膜、９・・・光遮蔽膜、９′・・・アルミニウム
膜、１０・・・カバー絶縁膜、１１・・・酸化アルミニ
ウム膜、１２・・・ホトレジストマスク、１３・・・開
口、１４・・・テーパ部。3... Channel stopper 4... N-type impurity layer, 5... N-well impurity layer, 6... Silicon oxide film, 7... Polycrystalline silicon gate, 8... - Interlayer insulating film, 9... Light shielding film, 9'... Aluminum film, 10... Cover insulating film, 11... Aluminum oxide film, 12... Photoresist mask, 13... Opening, 14...Tapered part.
第１図は本発明の一実施例の主要部を示す半導体チップ
の断面図、第２図（ａ）、（ｂ）は実施例の製造方法を
説明するための工程順に配置した半導体チップの断面図
、第３図は従来例の主要部を示す半導体チップの断面図
である。
１・・・Ｎ型半導体基板（シリコン）、２・・・Ｐウエ
万１図
３５ｚ図
７５１図
篤３図FIG. 1 is a cross-sectional view of a semiconductor chip showing the main parts of an embodiment of the present invention, and FIGS. 2(a) and (b) are cross-sections of the semiconductor chip arranged in the order of steps to explain the manufacturing method of the embodiment. 3 are cross-sectional views of a semiconductor chip showing the main parts of a conventional example. 1... N-type semiconductor substrate (silicon), 2... P wafer Figure 35z Figure 751 Figure Atsushi 3
Claims (1)
が上方に向けて広くなっていることを特徴とする固体撮
像装置。A solid-state imaging device characterized in that the shape of an aperture of a light shielding film provided above a photoelectric conversion element becomes wider toward the top.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63170620A JPH0221659A (en) | 1988-07-08 | 1988-07-08 | Solid-state image pick-up device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63170620A JPH0221659A (en) | 1988-07-08 | 1988-07-08 | Solid-state image pick-up device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0221659A true JPH0221659A (en) | 1990-01-24 |
Family
ID=15908248
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63170620A Pending JPH0221659A (en) | 1988-07-08 | 1988-07-08 | Solid-state image pick-up device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0221659A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115583804A (en) * | 2022-10-21 | 2023-01-10 | 湖北大学 | Antireflection super-hydrophobic film, and preparation method and application thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6124273A (en) * | 1984-07-13 | 1986-02-01 | Nec Corp | Solid-state image pickup element |
| JPS6153879A (en) * | 1984-08-23 | 1986-03-17 | Toshiba Corp | Solid-state image pickup device and its manufacture |
| JPS62156860A (en) * | 1985-12-28 | 1987-07-11 | Toshiba Corp | Solid-state image pickup device |
-
1988
- 1988-07-08 JP JP63170620A patent/JPH0221659A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6124273A (en) * | 1984-07-13 | 1986-02-01 | Nec Corp | Solid-state image pickup element |
| JPS6153879A (en) * | 1984-08-23 | 1986-03-17 | Toshiba Corp | Solid-state image pickup device and its manufacture |
| JPS62156860A (en) * | 1985-12-28 | 1987-07-11 | Toshiba Corp | Solid-state image pickup device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115583804A (en) * | 2022-10-21 | 2023-01-10 | 湖北大学 | Antireflection super-hydrophobic film, and preparation method and application thereof |
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