JPH02304338A - Device for measuring electric resistance - Google Patents
Device for measuring electric resistanceInfo
- Publication number
- JPH02304338A JPH02304338A JP12471789A JP12471789A JPH02304338A JP H02304338 A JPH02304338 A JP H02304338A JP 12471789 A JP12471789 A JP 12471789A JP 12471789 A JP12471789 A JP 12471789A JP H02304338 A JPH02304338 A JP H02304338A
- Authority
- JP
- Japan
- Prior art keywords
- measuring
- film
- load
- terminal
- insulation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000009413 insulation Methods 0.000 abstract description 12
- 239000000758 substrate Substances 0.000 abstract description 11
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 5
- 239000011810 insulating material Substances 0.000 abstract description 4
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000011156 evaluation Methods 0.000 abstract 1
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000010292 electrical insulation Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- BYFGZMCJNACEKR-UHFFFAOYSA-N aluminium(i) oxide Chemical compound [Al]O[Al] BYFGZMCJNACEKR-UHFFFAOYSA-N 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- BLBNEWYCYZMDEK-UHFFFAOYSA-N $l^{1}-indiganyloxyindium Chemical compound [In]O[In] BLBNEWYCYZMDEK-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Landscapes
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Measurement Of Resistance Or Impedance (AREA)
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
本発明は、導電性材料上に形成された絶縁性材料の絶縁
性及び絶縁性の信頼性を測定する装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an apparatus for measuring the insulation properties and reliability of insulation properties of an insulating material formed on a conductive material.
例えば液晶表示体を例に上げると、液晶表示体では第5
図に示す様に、2枚の基板1及び2上に、電極3.4と
絶縁膜5、配向膜6.7が形成されシール9で基板1及
び2を接着、固定し、液晶8をはさみ込んでいる。絶縁
I8!5は、液晶8中に金属などの導電性の異物があっ
た場合、電極3.4が短絡するのを防ぐためであり、高
い電気的絶縁性と絶縁信頼性が要求されている。For example, if we take a liquid crystal display as an example, the fifth
As shown in the figure, an electrode 3.4, an insulating film 5, and an alignment film 6.7 are formed on two substrates 1 and 2, and the substrates 1 and 2 are bonded and fixed with a seal 9, and a liquid crystal 8 is sandwiched between them. It is crowded. The insulation I8!5 is to prevent the electrodes 3.4 from shorting if there is a conductive foreign object such as metal in the liquid crystal 8, and high electrical insulation and insulation reliability are required. .
前記絶縁膜5が充分な絶縁性と絶縁信頼性を有するか否
かの試験方法として、従来は、材料の固有の電気的絶縁
抵抗、基材への密着力、膜強度などを総合的に検討し、
最終的には製品化して評価する方法が一般的であった。Conventionally, as a test method for determining whether the insulating film 5 has sufficient insulation properties and insulation reliability, the inherent electrical insulation resistance of the material, adhesion to the base material, film strength, etc. are comprehensively examined. death,
In the end, it was common to produce a product and evaluate it.
しかし、前述の従来の方法によると、絶縁膜として使用
可能か否かの判断をするために大量の製品を作る必要が
あり、又、工程途中の変動を管理できないという問題点
を有していた。However, according to the conventional method described above, it is necessary to produce a large number of products in order to determine whether or not they can be used as an insulating film, and there are also problems in that variations during the process cannot be controlled. .
そこで、本発明は上記問題点に鑑みなされたものであり
、その目的とするところは、絶縁物の評価を簡単な方法
でしかも精度よく管理できる電気抵抗n1定装置を提供
することにある。SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems, and its object is to provide an electrical resistance n1 constant device that can evaluate insulators in a simple manner and with high accuracy.
本発明の電気抵抗測定装置は、荷重を計測する手段と、
先端が鋭利な形状をした端子と、電気抵抗を計測する手
段とを有することを特徴とする。The electrical resistance measuring device of the present invention includes means for measuring load;
It is characterized by having a terminal with a sharp tip and means for measuring electrical resistance.
原理と構成を第1図により説明する。第1図は、基板1
1上に導電性膜12が形成され、導電性膜12上の一部
に絶縁膜13が形成されており、この絶縁膜13の絶縁
性を測定する場合を示す。測定装置の構成は、荷重を計
測するための手段として、バネばかり16と、先端が鋭
利な形状をした端子14と、電気抵抗を計δP1する手
段としてテスターを用いている。ここで矢印Aの方向か
ら力を加えていった場合の、加えた力と電気抵抗の関係
は第2図に示す様に、ある荷重aで電気抵抗は急激に変
化する。この時の荷重aを計測して、絶縁膜の電気的絶
縁性及び絶縁性の信頼性を評価できるのである。The principle and configuration will be explained with reference to FIG. Figure 1 shows the substrate 1
1, a conductive film 12 is formed on the conductive film 12, an insulating film 13 is formed on a part of the conductive film 12, and the insulation of the insulating film 13 is measured. The configuration of the measuring device uses a spring balance 16 as a means for measuring the load, a terminal 14 having a sharp tip, and a tester as a means for measuring the electrical resistance δP1. Here, when a force is applied from the direction of arrow A, the relationship between the applied force and the electrical resistance is as shown in FIG. 2, where the electrical resistance changes rapidly at a certain load a. By measuring the load a at this time, it is possible to evaluate the electrical insulation properties and the reliability of the insulation properties of the insulating film.
〔実施例1〕
第1図においてガラス基板11上にIn、0゜から成る
導電性膜12を形成し、絶縁性膜13として5in2を
1000人形成した。先端が鋭利な端子として先端の曲
率がr−10μm〜1. O0μmのビンを用いて、第
2図に示す荷重aを測定したところ、第3図に示す様に
、曲率と荷重aはきれいな相関関係を示し、再現性がよ
かった。[Example 1] In FIG. 1, a conductive film 12 made of In, 0° was formed on a glass substrate 11, and an insulating film 13 of 5 in 2 was formed by 1000 people. As a terminal with a sharp tip, the curvature of the tip is r-10 μm to 1. When the load a shown in FIG. 2 was measured using a 0 μm bottle, as shown in FIG. 3, the curvature and the load a showed a clear correlation, and the reproducibility was good.
〔実施例2〕
電気抵抗を計測する手段として、108Ωcm以下の電
気抵抗になるとブザーが鳴るテスターを用いて実施例1
に用いた基板を、実施例1と同様に調べた。結果は実施
例1と同様であった。[Example 2] As a means for measuring electrical resistance, a tester that sounds a buzzer when the electrical resistance becomes 108 Ωcm or less was used.
The substrate used in Example 1 was examined in the same manner as in Example 1. The results were similar to Example 1.
〔実施例3〕
絶縁性測定には先端が鋭利な端子として、先端の曲率が
r−20μmのピンを用い、電気抵抗を計測する手段と
して108Ωcm以下の電気抵抗になるとブザーが鳴る
テスターを用いた。被測定基板として、実施例1に用い
た基板で、SiO2の膜厚が300人〜1500Aのも
のを用いた。[Example 3] A pin with a curvature of r-20 μm at the tip was used as a terminal with a sharp tip for insulation measurement, and a tester that sounded a buzzer when the electrical resistance became 108 Ωcm or less was used as a means to measure electrical resistance. . As the substrate to be measured, the same substrate used in Example 1 with a SiO2 film thickness of 300 to 1500 A was used.
このときの膜厚と荷重aの関係を第4図に示す。The relationship between the film thickness and the load a at this time is shown in FIG.
第4図に示した様に、膜厚と荷重aはきれいな相関関係
を示し、再現性がよかった。As shown in FIG. 4, the film thickness and load a showed a clear correlation, and the reproducibility was good.
〔実施例4〕
実施例3で用いた装置を用い、被測定基板として、第1
図においてガラス基板11上にIn2O、から成る導電
性膜12を形成し、絶縁膜13としてAl2O*、ポリ
イミドの膜をそれぞれ1000人形成したものを用いた
。結果はAff20、が300g、ポリイミドが50g
であった。[Example 4] Using the apparatus used in Example 3, the first
In the figure, a conductive film 12 made of In2O was formed on a glass substrate 11, and as an insulating film 13, 1000 films each of Al2O* and polyimide were used. The results are 300g of Aff20 and 50g of polyimide.
Met.
実施例1〜4で、絶縁性の膜材料としてポリイミドの膜
よりもAll 20iの膜の方が優れ、さらにS 10
2の膜の方が優れることがわかった。In Examples 1 to 4, the All 20i film was superior to the polyimide film as an insulating film material, and the S 10
It was found that the film No. 2 was superior.
〔実施例5〕
実施例3で用いた装置を、実際の液晶表示装置の製造工
程の管理に用いたところ、製造工程の変動による不良は
激減した。[Example 5] When the apparatus used in Example 3 was used to manage the manufacturing process of an actual liquid crystal display device, defects due to variations in the manufacturing process were drastically reduced.
〔実施例6〕
実施例4で、絶縁膜13として、スパッタリング法によ
るSin、と、熱分解法によるSLO。[Example 6] In Example 4, the insulating film 13 was made of Sin by sputtering and SLO by thermal decomposition.
をそれぞれ100OA形成したものを用いて、実施例4
と同様の比較を行ったところ、スパッタリング法による
ものは荷重aが700g、熱分解法によるものは600
gであった。Example 4
A similar comparison was made and the load a was 700g for the sputtering method and 600g for the thermal decomposition method.
It was g.
なお、上述した各実施例では、荷重を測定する手段を端
子側に構成したが、基板を支持する側に配置しても同様
の効果が得られることは言うまでもなく明らかである。In each of the embodiments described above, the means for measuring the load is arranged on the terminal side, but it is obvious that the same effect can be obtained even if the means is arranged on the side that supports the board.
さらに、被測定物は実施例の様にガラス基板上に導電性
膜、絶縁膜を形成したものばかりではなく、例へば金属
基板上へ塗布した塗料の絶縁性(すなわち強度となる)
、半導体における層間絶縁膜等でも良い。Furthermore, the object to be measured is not limited to the one in which a conductive film or insulating film is formed on a glass substrate as in the example, but also the insulation (that is, strength) of a paint applied to a metal substrate.
, an interlayer insulating film in a semiconductor, or the like.
又、荷重を計測する装置と電気抵抗を計測する装置を連
動させても良いし、データーをコンピューター等で管理
できる様にすることもできる。Further, the device for measuring load and the device for measuring electrical resistance may be linked, or the data may be managed by a computer or the like.
以上の様に本発明の電気抵抗測定装置を用いることによ
り、製造工程を精度よく管理することができ、又、絶縁
物の材料、形成方法などの評価が簡単にできるようにな
った。又、装置の構成がシンプルなため、特別な知識、
技能が必要がなく、だれでも測定が行える。As described above, by using the electrical resistance measuring device of the present invention, it is possible to control the manufacturing process with high accuracy, and it has become possible to easily evaluate the material, forming method, etc. of the insulator. In addition, because the device has a simple configuration, special knowledge and
No skills are required and anyone can perform measurements.
第1図は本発明の原理と構成を示す図。 第2図は電気抵抗と荷重の関係を示す図。 第3図は実施例1における曲率と荷重の関係を示す図。 第4図は実施例3における膜厚と荷重の関係を示す図。 第5図は液晶表示体の概略断面図。 1・・・基板 2・・・基板 3・・・電極 4・・・電極 5・・・絶縁膜 6・・・配向膜 7・・・配向膜 8・・・液晶 9・φ拳シール 11・・・基板 12・・・導電性膜 13◆・・絶縁膜 14・・・端子 15・争・テスター 16・・・バネばかり 以上 出願人 セイコーエプソン株式会社 代理人 弁理士 鈴 木 喜三部(他1名)第1図 a″ 局重−夫 第 2因 ご〉先mnae jPTn 第3図 第4図 FIG. 1 is a diagram showing the principle and configuration of the present invention. FIG. 2 is a diagram showing the relationship between electrical resistance and load. FIG. 3 is a diagram showing the relationship between curvature and load in Example 1. FIG. 4 is a diagram showing the relationship between film thickness and load in Example 3. FIG. 5 is a schematic cross-sectional view of a liquid crystal display. 1... Board 2... Board 3...electrode 4...electrode 5...Insulating film 6...Alignment film 7...Alignment film 8...LCD 9・φ fist sticker 11... Board 12... Conductive film 13◆・・・Insulating film 14...terminal 15・War・Tester 16...just springs that's all Applicant: Seiko Epson Corporation Agent: Patent attorney Kisanbe Suzuki (and 1 other person) Figure 1 a″ Second cause Destination mnae jPTn Figure 3 Figure 4
Claims (1)
、電気抵抗を計測する手段とを有することを特徴とする
電気抵抗測定装置。An electrical resistance measuring device comprising a means for measuring load, a terminal having a sharp tip, and a means for measuring electrical resistance.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12471789A JPH02304338A (en) | 1989-05-18 | 1989-05-18 | Device for measuring electric resistance |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12471789A JPH02304338A (en) | 1989-05-18 | 1989-05-18 | Device for measuring electric resistance |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH02304338A true JPH02304338A (en) | 1990-12-18 |
Family
ID=14892364
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12471789A Pending JPH02304338A (en) | 1989-05-18 | 1989-05-18 | Device for measuring electric resistance |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH02304338A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0590347U (en) * | 1991-08-20 | 1993-12-10 | スタンレー電気株式会社 | Insulation thin film hardness measuring device |
JP2009158266A (en) * | 2007-12-26 | 2009-07-16 | Tdk Corp | Evaluation method of electrochemical element and evaluation device of electrochemical element |
JP2009243929A (en) * | 2008-03-28 | 2009-10-22 | Asahi Kasei E-Materials Corp | Testing device of film load bearing insulation and testing method of film load bearing insulation |
JP2010250954A (en) * | 2009-04-10 | 2010-11-04 | Kri Inc | Safety evaluation method for power storage device and evaluation jig |
JP2013540275A (en) * | 2010-10-22 | 2013-10-31 | セルガード エルエルシー | Penetration and / or compression test system and method |
JP2014032173A (en) * | 2012-07-11 | 2014-02-20 | Nippon Soken Inc | Puncture strength measuring apparatus |
-
1989
- 1989-05-18 JP JP12471789A patent/JPH02304338A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0590347U (en) * | 1991-08-20 | 1993-12-10 | スタンレー電気株式会社 | Insulation thin film hardness measuring device |
JP2009158266A (en) * | 2007-12-26 | 2009-07-16 | Tdk Corp | Evaluation method of electrochemical element and evaluation device of electrochemical element |
JP2009243929A (en) * | 2008-03-28 | 2009-10-22 | Asahi Kasei E-Materials Corp | Testing device of film load bearing insulation and testing method of film load bearing insulation |
JP2010250954A (en) * | 2009-04-10 | 2010-11-04 | Kri Inc | Safety evaluation method for power storage device and evaluation jig |
JP2013540275A (en) * | 2010-10-22 | 2013-10-31 | セルガード エルエルシー | Penetration and / or compression test system and method |
JP2014032173A (en) * | 2012-07-11 | 2014-02-20 | Nippon Soken Inc | Puncture strength measuring apparatus |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8534133B2 (en) | Electrical circuit assemblies and structural components incorporating same | |
US20140021968A1 (en) | Chip on glass substrate and method for measuring connection resistance of the same | |
WO2020107796A1 (en) | Display panel and crack detection method for display panel | |
JP2000241485A (en) | Electric resistance measuring device and its method for circuit board | |
JPH02304338A (en) | Device for measuring electric resistance | |
CN109342512A (en) | The crack detecting method of display panel and display panel | |
Payo et al. | Signal conditioning circuit for gel strain sensors | |
JP3276267B2 (en) | Electric resistance measuring device and electric resistance measuring method | |
CA1178083A (en) | Measuring device using a strain gauge | |
CA1320251C (en) | Parallel plate dielectric analyzer | |
CN110335560A (en) | The electric test method of array substrate, display panel and array substrate | |
JP2000074965A (en) | Electric resistance measuring device | |
GB2236855A (en) | Piezoelectric microbalance and method of using the same | |
JP2751460B2 (en) | Resistance measuring device | |
JPH02275349A (en) | Evaluating method for vulcanization bonding | |
JPH0590347U (en) | Insulation thin film hardness measuring device | |
JP2870785B2 (en) | Inspection method for thin film transistor matrix substrate | |
JP2001153902A (en) | Method of measuring resistance | |
Grabham et al. | Effects of the binder material on the mechanical properties of thick-film magnetostrictive materials | |
Fisher | Novel Method for Characterization of Ultra-Thin Film Materials Using Surface Acoustic Wave Devices | |
JPS63186211A (en) | Method for inspecting inter-electrode short circuit | |
JPH0246494A (en) | Method of evaluating characteristic of thin film transistor | |
JP2001100188A (en) | Liquid crystal display element | |
JPH0566189A (en) | Method and device for measuring electrical characteristics | |
JP2612444B2 (en) | Substrate inspection equipment for liquid crystal display |