JPH0230117B2 - - Google Patents
Info
- Publication number
- JPH0230117B2 JPH0230117B2 JP56039426A JP3942681A JPH0230117B2 JP H0230117 B2 JPH0230117 B2 JP H0230117B2 JP 56039426 A JP56039426 A JP 56039426A JP 3942681 A JP3942681 A JP 3942681A JP H0230117 B2 JPH0230117 B2 JP H0230117B2
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- ram
- power supply
- word line
- well region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 17
- 239000011159 matrix material Substances 0.000 claims description 8
- 230000003068 static effect Effects 0.000 claims description 6
- 239000000758 substrate Substances 0.000 description 10
- 230000005540 biological transmission Effects 0.000 description 8
- 230000010354 integration Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56039426A JPS57154696A (en) | 1981-03-20 | 1981-03-20 | Semiconductor integrated circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56039426A JPS57154696A (en) | 1981-03-20 | 1981-03-20 | Semiconductor integrated circuit device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57154696A JPS57154696A (en) | 1982-09-24 |
JPH0230117B2 true JPH0230117B2 (enrdf_load_stackoverflow) | 1990-07-04 |
Family
ID=12552659
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56039426A Granted JPS57154696A (en) | 1981-03-20 | 1981-03-20 | Semiconductor integrated circuit device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57154696A (enrdf_load_stackoverflow) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59231917A (ja) * | 1983-06-15 | 1984-12-26 | Hitachi Ltd | 半導体装置 |
JP2698236B2 (ja) * | 1991-06-21 | 1998-01-19 | 三洋電機株式会社 | 半導体メモリ |
JP6451177B2 (ja) * | 2014-09-25 | 2019-01-16 | 株式会社ソシオネクスト | スタティックramおよびスタティックramを搭載する半導体装置 |
-
1981
- 1981-03-20 JP JP56039426A patent/JPS57154696A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS57154696A (en) | 1982-09-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4125854A (en) | Symmetrical cell layout for static RAM | |
JP3085455B2 (ja) | スタティックram | |
US10453519B2 (en) | Semiconductor device | |
US12279419B2 (en) | Semiconductor storage device having rom cells including nanosheet field effect transistors | |
JPS61182244A (ja) | 半導体集積回路装置 | |
US4868628A (en) | CMOS RAM with merged bipolar transistor | |
EP0840323B1 (en) | Static semiconductor memory device with precharging circuits having similar configuration of memory cells | |
JPH0762960B2 (ja) | 半導体回路 | |
JPH0230117B2 (enrdf_load_stackoverflow) | ||
US5066996A (en) | Channelless gate array with a shared bipolar transistor | |
KR960012505A (ko) | 저소비전력으로 고속동작 가능한 센스엠프를 구비한 반도체 기억장치 | |
JPH06101551B2 (ja) | Cmos集積回路装置 | |
JP4923483B2 (ja) | 半導体装置 | |
JP6637564B2 (ja) | 半導体装置 | |
US5300790A (en) | Semiconductor device | |
JP2625415B2 (ja) | 記憶装置 | |
JP3186059B2 (ja) | 半導体装置 | |
JPH0477399B2 (enrdf_load_stackoverflow) | ||
JPH0457297A (ja) | 半導体記憶装置 | |
JPS6226690A (ja) | 半導体記憶装置 | |
JPH02309673A (ja) | 半導体集積回路 | |
EP0669654A1 (en) | Memory cell | |
JPH03295268A (ja) | 半導体装置 | |
JP2018060592A (ja) | 半導体装置 | |
EP0032608A1 (en) | Column line powered static ram cell |