JPH0228851B2 - - Google Patents
Info
- Publication number
- JPH0228851B2 JPH0228851B2 JP56047264A JP4726481A JPH0228851B2 JP H0228851 B2 JPH0228851 B2 JP H0228851B2 JP 56047264 A JP56047264 A JP 56047264A JP 4726481 A JP4726481 A JP 4726481A JP H0228851 B2 JPH0228851 B2 JP H0228851B2
- Authority
- JP
- Japan
- Prior art keywords
- optical
- switch
- switching
- input
- semiconductor laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000003287 optical effect Effects 0.000 claims description 34
- 239000011159 matrix material Substances 0.000 claims description 11
- 238000002347 injection Methods 0.000 claims 1
- 239000007924 injection Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 description 13
- 238000010586 diagram Methods 0.000 description 8
- 230000003321 amplification Effects 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04Q—SELECTING
- H04Q3/00—Selecting arrangements
- H04Q3/42—Circuit arrangements for indirect selecting controlled by common circuits, e.g. register controller, marker
- H04Q3/52—Circuit arrangements for indirect selecting controlled by common circuits, e.g. register controller, marker using static devices in switching stages, e.g. electronic switching arrangements
- H04Q3/526—Optical switching systems
Landscapes
- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
Description
【発明の詳細な説明】
本発明は小形で高速な切替速度を持つ光のマト
リクススイツチに関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an optical matrix switch that is compact and has a high switching speed.
従来の光マトリクススイツチとしては、第１図
に示すようなミラー可動形のものが考えられてい
る。第１図において、１は入力用光導波路、２は
出力用導波路、３は光ビームを平行ビームにする
ためのレンズ、４は可動ミラーである。このスイ
ツチでは光路中にミラーを挿入することによつ
て、スイツチング動作させる構成となつている。
したがつて高速なスイツチング動作が難かしいこ
と、小形化することが難かしい等の欠点がある。 As a conventional optical matrix switch, a movable mirror type switch as shown in FIG. 1 has been considered. In FIG. 1, 1 is an input optical waveguide, 2 is an output waveguide, 3 is a lens for converting a light beam into a parallel beam, and 4 is a movable mirror. This switch is configured to perform switching operation by inserting a mirror into the optical path.
Therefore, there are drawbacks such as difficulty in high-speed switching operation and difficulty in downsizing.
また他の例としてマトリクススイツチのスイツ
チ素子を第２図に示すような方向性結合器形の光
スイツチで構成する方式が考えられている。第２
図において５は電極、６は電気光学結晶で
LiNbO3やLiTaO3が用いられる。導波路はTi等
を拡散した方法がとられる。このスイツチではク
ロストークが大きく約−10〜−20dBのものが報
告されている。また高い製作精度が要求されるこ
とや、スイツチングに要する電圧が40〜50Vと高
いことや、単一モード用のスイツチしか作れない
等の欠点があつた。 As another example, a method has been considered in which the switch elements of the matrix switch are constructed from directional coupler type optical switches as shown in FIG. Second
In the figure, 5 is an electrode and 6 is an electro-optic crystal.
LiNbO 3 and LiTaO 3 are used. The waveguide is formed by diffusing Ti or the like. It has been reported that this switch has large crosstalk of approximately -10 to -20dB. It also had drawbacks such as requiring high manufacturing precision, requiring a high voltage of 40 to 50 V for switching, and being able to only make single-mode switches.
また光信号を電気信号に変換する所でスイツチ
ングする方式（参考文献、広帯域オプトエレクト
ロニツク・マトリクス・スイツチ、著者エルマ
ー・Ｈ・ハラ、町田道、神戸宏、池田正宏、電子
通信学会研究会技術資料OQE80―90、1980）の
ものが報告されているが、光−光のスイツチング
をやるためには、出力の電気信号を光信号にさら
に変換してやらなければなない等の欠点があつ
た。 Also, a method of switching at the point where the optical signal is converted to an electrical signal (References, Wideband Optoelectronic Matrix Switch, Authors Elmer H. Hara, Michi Machida, Hiroshi Kobe, Masahiro Ikeda, Technical Data of the Institute of Electronics and Communication Engineers Study Group) OQE80-90, 1980) has been reported, but it had drawbacks such as the need to further convert the output electrical signal into an optical signal in order to perform light-to-light switching.
本発明はこれらの欠点を解決するため、光スイ
ツチ素子として半導体レーザを使用して直接光の
スイツチングを行うことにより、高速で小形の光
マトリクススイツチを提供するものである。 In order to solve these drawbacks, the present invention provides a high-speed, compact optical matrix switch by using a semiconductor laser as an optical switch element to directly switch light.
第３図は本発明に用いる光スイツチ素子の構成
図で、１は光入力用導波路、２は光出力用導波
路、７はPN接合素子の一実施例である半導体レ
ーザである。この光スイツチの動作は半導体レー
ザのバイアスをON，OFFすることによつて達成
される。第４図は半導体レーザの規格化した印加
電流と光出力との関係を示した図である（参考文
献、半導体レーザ増幅器の利得、利得飽和および
雑音特性、著者向井孝彰、山本喜久、電子通信学
会研究技術資料OQE80―71）。 FIG. 3 is a block diagram of an optical switch element used in the present invention, in which 1 is a light input waveguide, 2 is a light output waveguide, and 7 is a semiconductor laser which is an embodiment of a PN junction element. The operation of this optical switch is achieved by turning the bias of the semiconductor laser on and off. Figure 4 is a diagram showing the relationship between the standardized applied current and optical output of a semiconductor laser (References, Gain, gain saturation, and noise characteristics of semiconductor laser amplifiers, authors Takaaki Mukai, Yoshihisa Yamamoto, Institute of Electronics and Communication Engineers) Research and technical data OQE80-71).
第４図からわかるように、バイアス電流Ｊが半
導体レーザLD１，LD２の閾値電流Jthの近傍で
増幅度が20dB以上とれている。今バイアス電流
が０の場合には、半導体レーザ媒質は損失媒質と
なるので、増幅度で換算すると−20dB以下とな
る。したがつてバイアス電流を０と閾値近傍とで
切り替えることによつて、アイソレーシヨンは
40dB以上とることが可能となる。バイアス電流
の閾値は約100mAで、10nsec以下の高速切り替
が可能である。また半導体レーザそのものの帯域
は約1GHz以上と広いので、広帯域信号を通すこ
とが可能である。 As can be seen from FIG. 4, the amplification degree is 20 dB or more when the bias current J is near the threshold current J th of the semiconductor lasers LD1 and LD2. If the bias current is 0, the semiconductor laser medium becomes a loss medium, so the amplification is -20 dB or less. Therefore, by switching the bias current between 0 and near the threshold, isolation can be improved.
It becomes possible to take more than 40dB. The bias current threshold is approximately 100mA, and high-speed switching of 10nsec or less is possible. Furthermore, since the semiconductor laser itself has a wide band of about 1 GHz or more, it is possible to pass wideband signals.
第５図は本発明の２×２光マトリクススイツチ
の一実施例の構成図で、１は入力用光導波路、２
は出力用光導波路、７は半導体レーザ、８は光分
岐回路、９は光合波回路である。各叉点のスイツ
チングはバイアス電流の切り替で達成される。各
構成素子は半導体レーザと光IC化された分岐・
合波回路で作製できるので、非常に小形にでき
る。 FIG. 5 is a configuration diagram of an embodiment of the 2×2 optical matrix switch of the present invention, in which 1 is an input optical waveguide, 2
1 is an output optical waveguide, 7 is a semiconductor laser, 8 is an optical branching circuit, and 9 is an optical multiplexing circuit. Switching of each crosspoint is accomplished by switching the bias current. Each component consists of a semiconductor laser and a branch/optical IC.
Since it can be manufactured using a multiplexing circuit, it can be made extremely compact.
以上説明したように、スイツチング素子として
半導体レーザを使用するので、光−光のスイツチ
ングが可能で、かつ増幅機能を有するので、クロ
ストロークが少なく、挿入損失が小さい。また可
動部分がなく、高速で、広帯域なマトリクススイ
ツチを構成できる利点がある。 As explained above, since a semiconductor laser is used as a switching element, it is possible to perform light-to-light switching and has an amplification function, so that cross strokes are small and insertion loss is small. Another advantage is that there are no moving parts, and a high-speed, wide-band matrix switch can be constructed.
第１図は従来の光マトリクススイツチでミラー
可動形の構成図、第２図は方向性結合器形の光ス
イツチ構成図、第３図は本発明に用いる光スイツ
チ素子の構成図、第４図は半導体レーザの規格化
した印加電流と光出力との関係を示した図、第５
図は本発明の一実施例の構成図である。
１……入力用光導波路、２……出力用光導波
路、３……レンズ、４……可動ミラー、５……電
極、６……電気光学結晶基板、７……半導体レー
ザ、８……光分岐回路、９……光合波回路。
Fig. 1 is a block diagram of a conventional optical matrix switch of movable mirror type, Fig. 2 is a block diagram of a directional coupler type optical switch, Fig. 3 is a block diagram of an optical switch element used in the present invention, and Fig. 4 is a block diagram of a conventional optical matrix switch. Figure 5 shows the relationship between the normalized applied current and optical output of a semiconductor laser.
The figure is a configuration diagram of an embodiment of the present invention. DESCRIPTION OF SYMBOLS 1... Input optical waveguide, 2... Output optical waveguide, 3... Lens, 4... Movable mirror, 5... Electrode, 6... Electro-optic crystal substrate, 7... Semiconductor laser, 8... Light Branch circuit, 9...optical multiplexing circuit.
Claims (1)
おいて、光入力信号を出力数に応じた数をもつ光
分岐回路に入射させ、マトリクスを構成する各叉
点にPN接合素子を配置し、分岐された光信号を
該PN接合素子の片端面から入射させ、他の片端
面から出射する光信号を、入力数に応じた数をも
つ光合波回路に入射させて光出力信号とし、PN
接合素子の注入電流を切り替えることによつて、
スイツチング動作させることを特徴とする光マト
リクススイツチ。1. In a matrix-like switch that switches optical signals, an optical input signal is input into optical branch circuits whose number corresponds to the number of outputs, a PN junction element is placed at each junction that makes up the matrix, and the branched optical signals are An optical signal input from one end surface of the PN junction element and emitted from the other end surface is input to an optical multiplexing circuit whose number corresponds to the number of inputs to produce an optical output signal.
By switching the injection current of the junction element,
An optical matrix switch characterized by a switching operation.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4726481A JPS57163216A (en) | 1981-04-01 | 1981-04-01 | Optical matrix switch |
| DE3210980A DE3210980C2 (en) | 1981-04-01 | 1982-03-25 | Optical switching element and optical switching matrix |
| FR8205325A FR2503394B1 (en) | 1981-04-01 | 1982-03-29 | OPTICAL SWITCHING ELEMENT AND OPTICAL SWITCHING MATRIX WITH SUCH ELEMENTS |
| CA000399956A CA1178703A (en) | 1981-04-01 | 1982-03-31 | Optical switch |
| US06/364,486 US4521069A (en) | 1981-04-01 | 1982-04-01 | Optical switch |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4726481A JPS57163216A (en) | 1981-04-01 | 1981-04-01 | Optical matrix switch |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57163216A JPS57163216A (en) | 1982-10-07 |
| JPH0228851B2 true JPH0228851B2 (en) | 1990-06-26 |
Family
ID=12770428
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4726481A Granted JPS57163216A (en) | 1981-04-01 | 1981-04-01 | Optical matrix switch |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57163216A (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59211023A (en) * | 1983-05-16 | 1984-11-29 | Nec Corp | Optical switch |
| JPH0731330B2 (en) * | 1984-02-24 | 1995-04-10 | 日本電気株式会社 | Matrix switch and driving method thereof |
| JPS61231530A (en) * | 1985-04-05 | 1986-10-15 | Nec Corp | Optical switch circuit |
| JPS61174520A (en) * | 1985-01-30 | 1986-08-06 | Oki Electric Ind Co Ltd | Optical matrix switch |
| JPS6290627A (en) * | 1985-10-17 | 1987-04-25 | Nec Corp | Optical switch circuit |
| JPS6290626A (en) * | 1985-10-17 | 1987-04-25 | Nec Corp | Optical switch circuit |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4942277A (en) * | 1972-03-03 | 1974-04-20 | ||
| JPS5448567A (en) * | 1977-09-26 | 1979-04-17 | Sumitomo Electric Ind Ltd | Optical branching device |
-
1981
- 1981-04-01 JP JP4726481A patent/JPS57163216A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4942277A (en) * | 1972-03-03 | 1974-04-20 | ||
| JPS5448567A (en) * | 1977-09-26 | 1979-04-17 | Sumitomo Electric Ind Ltd | Optical branching device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57163216A (en) | 1982-10-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CA1178703A (en) | Optical switch | |
| JP3459259B2 (en) | Waveguide type optical crosspoint switch | |
| US4798435A (en) | Optical switch circuit | |
| JPH02199430A (en) | Semiconductor optical switch and semiconductor optical switch array | |
| US6424438B1 (en) | Apparatus and method for realizing all-optical NOR logic device | |
| JPH0228851B2 (en) | ||
| JPS61156231A (en) | Circuit for mixing and integrating light | |
| JPH0575212A (en) | Optical nonlinear amplifying element | |
| JPH0230491B2 (en) | ||
| JPS59135441A (en) | Optical waveguide switch | |
| JPS60254991A (en) | Time-division optical exchange | |
| JPS62189830A (en) | Optical repeater | |
| JPH07106548A (en) | Semiconductor light source device and driving method therefor | |
| US7286731B2 (en) | Monolithically integrated optical coupler with substantially no splitting loss | |
| JP2630052B2 (en) | Matrix optical switch | |
| JPS5850517A (en) | Optical matrix switch | |
| JPS6191623A (en) | Optical switch element | |
| JPS6076722A (en) | Matrix optical switch | |
| JP2622576B2 (en) | Optical signal converter | |
| JPH0510653B2 (en) | ||
| JPS60177326A (en) | Matrix switch and its driving method | |
| Muranaka et al. | A route-and-select optical switch with flip-chip-bonded LVDS-compatible driver for sub-nanosecond switching | |
| JPS61113199A (en) | Optical shift register circuit | |
| JPS6122360Y2 (en) | ||
| Kim et al. | Optoelectronic InP-InGaAs smart pixels for optical interconnections and computing |