JPH0230491B2 - - Google Patents
Info
- Publication number
- JPH0230491B2 JPH0230491B2 JP57018117A JP1811782A JPH0230491B2 JP H0230491 B2 JPH0230491 B2 JP H0230491B2 JP 57018117 A JP57018117 A JP 57018117A JP 1811782 A JP1811782 A JP 1811782A JP H0230491 B2 JPH0230491 B2 JP H0230491B2
- Authority
- JP
- Japan
- Prior art keywords
- optical
- switch
- waveguide
- output
- matrix
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000003287 optical effect Effects 0.000 claims description 56
- 239000011159 matrix material Substances 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 14
- 230000008878 coupling Effects 0.000 claims description 5
- 238000010168 coupling process Methods 0.000 claims description 5
- 238000005859 coupling reaction Methods 0.000 claims description 5
- 238000010586 diagram Methods 0.000 description 6
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 230000003321 amplification Effects 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04Q—SELECTING
- H04Q3/00—Selecting arrangements
- H04Q3/42—Circuit arrangements for indirect selecting controlled by common circuits, e.g. register controller, marker
- H04Q3/52—Circuit arrangements for indirect selecting controlled by common circuits, e.g. register controller, marker using static devices in switching stages, e.g. electronic switching arrangements
- H04Q3/526—Optical switching systems
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction in an optical waveguide structure
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/29—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection
- G02F1/31—Digital deflection, i.e. optical switching
- G02F1/313—Digital deflection, i.e. optical switching in an optical waveguide structure
- G02F1/3137—Digital deflection, i.e. optical switching in an optical waveguide structure with intersecting or branching waveguides, e.g. X-switches and Y-junctions
- G02F1/3138—Digital deflection, i.e. optical switching in an optical waveguide structure with intersecting or branching waveguides, e.g. X-switches and Y-junctions the optical waveguides being made of semiconducting materials
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Solid State Image Pick-Up Elements (AREA)
Description
【発明の詳細な説明】
本発明は集積度の高い光マトリクス・スイツチ
に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a highly integrated optical matrix switch.
光マトリクス・スイツチを構成する場合には、
単位光スイツチとして１×Ｎ形のものを用いて構
成する場合と、２×２形のものを多段に用いて構
成する場合がある。第１図は前者の場合の構成例
図で、１は入力光導波路、２は単位光スイツチ、
３はPN接合形半導体光スイツチ素子、４は接続
用導波路、５は出力光導波路を示している。 When configuring an optical matrix switch,
There are cases in which unit optical switches are constructed using 1×N type switches, and structures in which 2×2 type switches are used in multiple stages. Figure 1 shows an example of the configuration in the former case, where 1 is an input optical waveguide, 2 is a unit optical switch,
3 is a PN junction type semiconductor optical switch element, 4 is a connection waveguide, and 5 is an output optical waveguide.
ここで前記PN接合形半導体光スイツチ素子３
について説明する。 Here, the PN junction type semiconductor optical switch element 3
I will explain about it.
第３図はPN接合形半導体光スイツチ素子３の
構成図で、１は入力光導波路、５は出力光導波
路、６はPN接合形半導体素子、RLは負荷抵抗で
ある。この光スイツチの動作はPN接合形半導体
素子の注入電流をオン、オフすることによつて達
成される。第４図はPN接合半導体素子の規格化
した印加電流と光出力との関係を示した図であ
る。 FIG. 3 is a block diagram of the PN junction semiconductor optical switch device 3, in which 1 is an input optical waveguide, 5 is an output optical waveguide, 6 is a PN junction semiconductor device, and R L is a load resistance. The operation of this optical switch is achieved by turning on and off the injection current of the PN junction type semiconductor element. FIG. 4 is a diagram showing the relationship between the standardized applied current and optical output of a PN junction semiconductor element.
第４図からわかるように、注入電流ＪがPN接
合形半導体素子LD１，LD２の閾値電流Jthの近
傍で増幅度が20dB以上とれている。今注入電流
が０の場合には、PN接合形半導体素子の媒質は
損失媒質となるので、増幅度で換算すると−
20dB以下となる。したがつて注入電流を０と閾
値近傍とで切り替えることによつて、アイソレー
シヨンは40dB以上とることが可能となる。注入
電流の閾値は約100mAで、10nsec以下の高速切
り替が可能である。またPN接合形半導体素子そ
のものの帯域は約1GHz以上と広いので、広帯域
信号を通すことが可能である。 As can be seen from FIG. 4, when the injection current J is near the threshold current J th of the PN junction type semiconductor elements LD1 and LD2, the amplification degree is 20 dB or more. If the injected current is 0, the medium of the PN junction semiconductor element becomes a loss medium, so when converted to the amplification degree, -
It will be less than 20dB. Therefore, by switching the injection current between 0 and near the threshold, it is possible to achieve isolation of 40 dB or more. The injection current threshold is approximately 100mA, and high-speed switching of 10nsec or less is possible. Furthermore, since the PN junction type semiconductor element itself has a wide band of about 1 GHz or more, it is possible to pass broadband signals.
第１図の場合は１×３の単位光スイツチを利用
して３×３のマトリクス・スイツチを構成する場
合について示したものである。この場合には接続
用導波路が相互に交叉し、集積化をねらいとした
同一基板上での光導波路ではクロストークの原因
となる。またパターン化する場合に接続用導波路
形状が複雑なため損失が大きくなる。さらには大
規模化する場合にはクロストークを生じ、また形
状が大きくなる点から実現性が小さい。 In the case of FIG. 1, a 3.times.3 matrix switch is constructed using 1.times.3 unit optical switches. In this case, the connecting waveguides cross each other, causing crosstalk in optical waveguides on the same substrate intended for integration. Furthermore, when patterning, the loss increases because the shape of the connecting waveguide is complicated. Furthermore, when increasing the scale, crosstalk occurs and the shape becomes large, making it difficult to implement.
第２図は２×２の単位スイツチを利用して接続
用導波路が交叉しないように構成した例を示す。
この場合にはブロツキングが生じ、完全線群を構
成できない、大規模化するためには多段にする必
要があり、単位スイツチの個数が大きくなる等の
欠点があり、光通話路用スイツチとしての実現性
が乏しい。 FIG. 2 shows an example in which a 2×2 unit switch is used so that the connecting waveguides do not intersect.
In this case, blocking occurs, making it impossible to construct a complete line group, and increasing the scale requires multiple stages, which increases the number of unit switches. lacking in sex.
本発明はこれらの欠点を解決するため、単純な
マトリクス形状に構成したものである。以下図面
により本発明を詳細に説明する。 In order to solve these drawbacks, the present invention is constructed in a simple matrix shape. The present invention will be explained in detail below with reference to the drawings.
第５図は本発明の一実施例図であつて、２×２
の基本構成について表わしたものである。第５図
において１および５はそれぞれ入力光導波路およ
び出力光導波路であつて、光スイツチ素子３と同
一基板上にフオトリソグラフイ技術で作製するこ
とができる。７は入力導波路ｉと出力導波路ｊと
を結合するための結合用導波路で、その途中に前
記光スイツチ素子Sijが設けられている。したが
つて入線ｉと出線ｊとを接続する場合には、Sij
の注入電流をオンにすれば達成される。また交叉
点ｉ，ｊで接続されない場合には、入線に設けら
れるスイツチ素子Sj iをオンにすれば、該光スイツ
チ素子Sj iの増幅作用を利用して光信号のレベル
を、どの交叉点でも一定にすることが可能であ
る。 FIG. 5 is a diagram showing one embodiment of the present invention, and is a 2×2
This is a representation of the basic configuration of. In FIG. 5, 1 and 5 are an input optical waveguide and an output optical waveguide, respectively, which can be fabricated on the same substrate as the optical switch element 3 by photolithography. 7 is a coupling waveguide for coupling the input waveguide i and the output waveguide j, and the optical switch element S ij is provided in the middle thereof. Therefore, when connecting incoming line i and outgoing line j, S ij
This can be achieved by turning on the injection current. In addition, if they are not connected at intersections i and j, by turning on the switch element S j i provided at the incoming line, the level of the optical signal can be changed by using the amplification effect of the optical switch element S j i . It is possible to make it constant even at a point.
なお切替用スイツチSijで出力光のパワレベル
を一定にする作用を持たせれば、Sj iは必要ではな
い。出線の方には光分岐回路が挿入されないの
で、損失少なく出力される。 Note that if the changeover switch S ij has the effect of keeping the power level of the output light constant, S j i is not necessary. Since no optical branching circuit is inserted on the outgoing line, output is achieved with less loss.
以上説明したように、本発明の光マトリクス・
スイツチは、クロスバ式に光導波路を構成するこ
とができるので、以下のような利点がある。 As explained above, the optical matrix of the present invention
Since the switch can configure an optical waveguide in a crossbar type, it has the following advantages.
(i) 構成が単純であるので、大規模化に適してい
る。(i) Since the configuration is simple, it is suitable for large scale.
(ii) 光導波路の交叉は直交状態で構成できるの
で、クロストークが小さい。(ii) Since the optical waveguides can be constructed in a perpendicular state, crosstalk is small.
(iii) 大規模化する場合に、単位スイツチを組み合
わせて構成する方法と比較して、素子数が少な
くてすむので作製が容易である。(iii) When increasing the scale, it is easier to manufacture because the number of elements is smaller compared to a method in which unit switches are combined.
(iv) マトリクスの交点をオンにするだけで制御が
できるので、制御回路が非常に簡単になる。(iv) Control can be performed simply by turning on the intersection points of the matrix, making the control circuit extremely simple.
(v) オンの状態で光スイツチ素子を通過する数が
非常に少ないので、損失、帯域、高速性の面で
非常に有利となる。(v) Since the number of lights passing through the optical switch element in the on state is very small, it is very advantageous in terms of loss, bandwidth, and high speed.
第１図は従来の光マトリクス・スイツチの構成
例で１×Ｎ形の単位スイツチを用いた場合の構成
図、第２図は従来の他の光マトリクス・スイツチ
の構成例で２×２の単位光スイツチを用いた場合
の構成図、第３図は本発明に用いる光スイツチ素
子の構成図、第４図はPN接合形半導体素子の規
格化した印加電流と光出力との関係を示す図、第
５図は本発明の一実施例の構成図である。
１……入力光導波路、２……単位光スイツチ、
３……PN接合形半導体光スイツチ素子、４……
接続用光導波路、５……出力光導波路、６……
PN接合形半導体素子、７……結合用光導波路。
Figure 1 is an example of the configuration of a conventional optical matrix switch using a 1 x N type unit switch. Figure 2 is an example of the configuration of another conventional optical matrix switch using a 2 x 2 unit. FIG. 3 is a configuration diagram of an optical switch element used in the present invention; FIG. 4 is a diagram showing the relationship between normalized applied current and optical output of a PN junction type semiconductor element; FIG. 5 is a block diagram of an embodiment of the present invention. 1...Input optical waveguide, 2...Unit optical switch,
3...PN junction type semiconductor optical switch element, 4...
Connection optical waveguide, 5... Output optical waveguide, 6...
PN junction type semiconductor element, 7... optical waveguide for coupling.
Claims (1)
を用いて、該半導体素子に注入する電流をオン、
オフすることにより、光スイツチングを行う光マ
トリクス・スイツチにおいて、複数の入力光導波
路および出力導波路を交叉するように配置したマ
トリクスからなり、該入力光導波路と該出力光導
波路の各交叉点で該入力光導波路と該出力光導波
路とを結合用光導波路を用いて結合させ、かつ該
結合用光導波路の途中に前記光スイツチ素子を配
設させたことを特徴とする光マトリクス・スイツ
チ。 ２ 特許請求の範囲第１項記載の光マトリクス・
スイツチにおいて、前記各入力光導波路および前
記各出力光導波路に１個以上の前記光スイツチを
配設させたことを特徴とする光マトリクス・スイ
ツチ。[Claims] 1. Using a PN junction type semiconductor element as an optical switch element, turning on a current injected into the semiconductor element,
By turning off the switch, an optical matrix switch that performs optical switching consists of a matrix arranged to intersect a plurality of input optical waveguides and output optical waveguides, and at each intersection point of the input optical waveguide and the output optical waveguide, the optical matrix switch performs optical switching. An optical matrix switch characterized in that an input optical waveguide and the output optical waveguide are coupled using a coupling optical waveguide, and the optical switch element is disposed in the middle of the coupling optical waveguide. 2. Optical matrix according to claim 1.
An optical matrix switch characterized in that one or more of the optical switches are disposed in each of the input optical waveguides and each of the output optical waveguides.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57018117A JPS58137246A (en) | 1982-02-09 | 1982-02-09 | Optical matrix-switch |
| DE3210980A DE3210980C2 (en) | 1981-04-01 | 1982-03-25 | Optical switching element and optical switching matrix |
| FR8205325A FR2503394B1 (en) | 1981-04-01 | 1982-03-29 | OPTICAL SWITCHING ELEMENT AND OPTICAL SWITCHING MATRIX WITH SUCH ELEMENTS |
| CA000399956A CA1178703A (en) | 1981-04-01 | 1982-03-31 | Optical switch |
| US06/364,486 US4521069A (en) | 1981-04-01 | 1982-04-01 | Optical switch |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57018117A JPS58137246A (en) | 1982-02-09 | 1982-02-09 | Optical matrix-switch |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58137246A JPS58137246A (en) | 1983-08-15 |
| JPH0230491B2 true JPH0230491B2 (en) | 1990-07-06 |
Family
ID=11962659
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57018117A Granted JPS58137246A (en) | 1981-04-01 | 1982-02-09 | Optical matrix-switch |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58137246A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0541435U (en) * | 1991-11-14 | 1993-06-08 | 株式会社イナツクス | Weight scale built-in vanity |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60126630A (en) * | 1983-12-14 | 1985-07-06 | Nec Corp | Optical switch |
| JPH0731330B2 (en) * | 1984-02-24 | 1995-04-10 | 日本電気株式会社 | Matrix switch and driving method thereof |
| JPS61231530A (en) * | 1985-04-05 | 1986-10-15 | Nec Corp | Optical switch circuit |
| JPS61174520A (en) * | 1985-01-30 | 1986-08-06 | Oki Electric Ind Co Ltd | Optical matrix switch |
| JPS6290626A (en) * | 1985-10-17 | 1987-04-25 | Nec Corp | Optical switch circuit |
| JPS6290627A (en) * | 1985-10-17 | 1987-04-25 | Nec Corp | Optical switch circuit |
| JP2539381B2 (en) * | 1986-06-18 | 1996-10-02 | 株式会社日立製作所 | Light switch |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4942277A (en) * | 1972-03-03 | 1974-04-20 |
-
1982
- 1982-02-09 JP JP57018117A patent/JPS58137246A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4942277A (en) * | 1972-03-03 | 1974-04-20 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0541435U (en) * | 1991-11-14 | 1993-06-08 | 株式会社イナツクス | Weight scale built-in vanity |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58137246A (en) | 1983-08-15 |
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