JPH07106548A - Semiconductor light source device and driving method therefor - Google Patents
Semiconductor light source device and driving method thereforInfo
- Publication number
- JPH07106548A JPH07106548A JP25148593A JP25148593A JPH07106548A JP H07106548 A JPH07106548 A JP H07106548A JP 25148593 A JP25148593 A JP 25148593A JP 25148593 A JP25148593 A JP 25148593A JP H07106548 A JPH07106548 A JP H07106548A
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- wavelength
- light source
- laser diode
- source device
- optical
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、任意の波長の光変調信
号出力から他の任意の波長の光変調信号出力への切り換
えを高速に行いうる半導体光源装置とその駆動方法に関
する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor light source device capable of switching from an optical modulation signal output of an arbitrary wavelength to an optical modulation signal output of another arbitrary wavelength at a high speed and a driving method thereof.
【０００２】[0002]
【従来の技術】従来提案されている高速波長切換光源の
代表的な構造を図１に示す（１９９３年電子情報通信学
会春季大会予稿Ｂ−９６１）。図中、１は波長可変半導
体レーザダイオード素子、２は光スイッチ素子、３は外
部変調器素子、４は光ファイバである。2. Description of the Related Art A typical structure of a conventionally proposed high-speed wavelength switching light source is shown in FIG. 1 (1993 Spring Conference of the Institute of Electronics, Information and Communication Engineers B-961). In the figure, 1 is a wavelength tunable semiconductor laser diode element, 2 is an optical switch element, 3 is an external modulator element, and 4 is an optical fiber.
【０００３】かかる高速波長切換光源の動作は、以下の
通りである。波長可変半導体レーザダイオード素子１
は、特定の範囲内において出力波長を任意に設定可能で
あるが、波長設定のために数十〜数百ｎｓの時間を要す
る。そのため、１ｎｓ以下の高速で出力波長を切り換え
るために、２個の波長可変半導体レーザダイオード素子
１が用意され、光スイッチ素子２で一方の波長可変半導
体レーザダイオード素子１を選択し、外部変調器素子３
によって変調して出力する。その間、他方の波長可変半
導体レーザダイオード素子１は、次に送り出す波長に設
定して待機させておき、波長切り換え時に光スイッチ素
子２で選択する。このような動作を繰り返すことによ
り、高速な波長切り換えが実現されている。しかし、こ
の従来構造の高速波長切換光源においては、各素子間を
結ぶ光ファイバ４の接続点において、１接続点あたり５
ｄＢ以上、トータルで２５ｄＢ以上の接続損失がある。
また、波長可変半導体レーザダイオード素子１の波長設
定においては、波長設定用電極に電流を注入することか
ら素子温度が変動し、熱による波長ドリフトを伴うた
め、波長安定化のために光学部品と電気回路を組み合わ
せた図２に示すような複雑な波長制御装置を用いる必要
があった。The operation of such a high speed wavelength switching light source is as follows. Tunable semiconductor laser diode device 1
The output wavelength can be arbitrarily set within a specific range, but it takes several tens to several hundreds ns to set the wavelength. Therefore, in order to switch the output wavelength at a high speed of 1 ns or less, two wavelength tunable semiconductor laser diode elements 1 are prepared, one of the wavelength tunable semiconductor laser diode elements 1 is selected by the optical switch element 2, and the external modulator element is selected. Three
Modulate by and output. In the meantime, the other wavelength tunable semiconductor laser diode element 1 is set to the wavelength to be sent out next and is made to stand by, and is selected by the optical switch element 2 at the time of wavelength switching. By repeating such operations, high-speed wavelength switching is realized. However, in this high-speed wavelength switching light source having the conventional structure, at the connection point of the optical fiber 4 connecting the elements, 5 points per connection point are provided.
There is a connection loss of more than dB, totaling more than 25 dB.
Further, in the wavelength setting of the wavelength tunable semiconductor laser diode element 1, the element temperature fluctuates due to the injection of a current into the wavelength setting electrode, which causes wavelength drift due to heat. It is necessary to use a complicated wavelength control device as shown in FIG. 2 in which circuits are combined.
【０００４】[0004]
【発明が解決しようとする課題】上記の如き従来の高速
波長切換光源では、各素子と接続用の光ファイバの接続
点数が多いため、装置の組立に高精度（１μｍ程度）が
要求される箇所が多く、また、各接続点で損失が発生す
るので、波長可変半導体レーザダイオード素子から出射
された光パワーが有効に用いられないという欠点があっ
た。さらに波長設定後に波長可変半導体レーザダイオー
ド素子内における温度変動による波長ドリフトが発生す
るため、波長安定化のために同様の高精度の組み立て箇
所を含む複雑な制御装置を組み合わせて用いる必要があ
った。In the conventional high-speed wavelength switching light source as described above, the number of connecting points between each element and the connecting optical fiber is large, so that a high precision (about 1 μm) is required for assembling the device. However, there is a drawback that the optical power emitted from the wavelength tunable semiconductor laser diode element cannot be effectively used because many losses occur at each connection point. Further, since wavelength drift occurs due to temperature variation in the wavelength tunable semiconductor laser diode element after setting the wavelength, it is necessary to combine and use a complicated control device including a similar highly accurate assembly site for wavelength stabilization.
【０００５】本発明は、このような事情に鑑み、単純な
構成で、かつ高効率、高信頼性、簡単な制御回路で動作
可能な高速波長切換光源となる半導体光源装置を提供す
ることを課題とする。In view of such circumstances, the present invention has an object to provide a semiconductor light source device which is a high-speed wavelength switching light source which has a simple structure and can operate with a high efficiency, high reliability and a simple control circuit. And
【０００６】[0006]
【課題を解決するための手段】上記課題を達成する本発
明の構成は、同一半導体基板上に、波長可変レーザダ
イオード素子と吸収型光スイッチ素子各１個が直列に配
置された単位素子を並列に複数組配置し、さらに当該単
位素子の複数の光出力端子を１つの光出力端子にまとめ
るための光合流素子あるいは光カプラ素子と出力光を変
調するための吸収型光変調器素子とを配置すること、
個々の波長可変レーザダイオード素子の波長設定用電極
に隣接して熱ドリフト制御用電極を設け、該波長可変用
電極に注入する電流量と該熱ドリフト制御用電極に注入
する電流量を相補的に制御する電気回路を組み合わせて
構成したことを特徴とする。The structure of the present invention that achieves the above-mentioned object is to arrange unit elements in which one wavelength tunable laser diode element and one absorption type optical switch element are arranged in series on the same semiconductor substrate in parallel. And a plurality of optical output terminals of the unit element are combined into one optical output terminal, and an optical merging element or an optical coupler element and an absorption type optical modulator element for modulating the output light are arranged. What to do,
A thermal drift control electrode is provided adjacent to the wavelength setting electrode of each wavelength tunable laser diode element, and the current amount injected into the wavelength variable electrode and the current amount injected into the thermal drift control electrode are complementarily It is characterized in that it is configured by combining electric circuits for controlling.
【０００７】[0007]
【作用】上記構成の本発明は、高速波長切換光源として
作用する。すなわち、複数の波長可変レーザダイオード
素子によってあらかじめ出力波長を設定し、吸収型光ス
イッチ素子で一つの波長可変レーザダイオード素子を選
択して出力波長を切り換えるため、０．１ｎｓ以下の高
速な波長切換が可能であり、選択された波長可変レーザ
ダイオード素子より出射された光は、外部変調器素子に
よって変調されて信号光として出力される。また、吸収
型光スイッチ素子によって選択されていない波長可変レ
ーザダイオード素子は、待機時間を利用して任意の波長
に設定でき、波長安定後に吸収型光スイッチによって選
択されるため、本発明の装置は、任意の波長の光変調信
号列を０．１ｎｓ以下の切り換え時間で、次々にに送り
出すという動作を行う。さらに本発明においては、熱ド
リフト制御用電極を設けたことにより、波長設定が簡単
な電気回路のみで可能となった。The present invention having the above construction operates as a high-speed wavelength switching light source. That is, since the output wavelength is set in advance by a plurality of wavelength tunable laser diode elements and one wavelength tunable laser diode element is selected by the absorption type optical switching element to switch the output wavelength, a high speed wavelength switching of 0.1 ns or less is possible. It is possible, and the light emitted from the selected wavelength tunable laser diode element is modulated by the external modulator element and output as signal light. Further, the wavelength tunable laser diode element not selected by the absorption type optical switch element can be set to an arbitrary wavelength by using the waiting time, and is selected by the absorption type optical switch after the wavelength is stabilized. , An optical modulation signal train of an arbitrary wavelength is sent one after another with a switching time of 0.1 ns or less. Further, in the present invention, the provision of the thermal drift control electrode makes it possible to set the wavelength only with an electric circuit.
【０００８】[0008]
【実施例】以下本発明の実施例を図面に基づき詳細に説
明する。Embodiments of the present invention will now be described in detail with reference to the drawings.
【０００９】図３は、本発明による半導体光源装置の一
実施例を示す図である。波長可変レーザダイオード素子
と吸収型光スイッチ素子各２個とＹ型光合流回路と吸収
型光変調器素子とからなる半導体モノリシック素子と電
気制御回路を用いて実現する場合の構成図である。図
中、１０は半導体基板、２１および２２は波長可変レー
ザダイオード素子、２１Ａおよび２２Ａは当該波長可変
レーザダイオード素子を構成する活性領域電極、同様に
２１Ｂおよび２２Ｂは波長設定用電極、３１および３２
は吸収型光スイッチ素子、４０はＹ型光合流回路、５０
は吸収型光変調器素子、６１および６２は熱ドリフト制
御用電極、７１および７２は波長設定用電気制御回路で
ある。FIG. 3 is a diagram showing an embodiment of the semiconductor light source device according to the present invention. FIG. 3 is a configuration diagram in the case of using a semiconductor monolithic element including two wavelength tunable laser diode elements, two absorption type optical switching elements, a Y type optical merging circuit and an absorption type optical modulator element, and an electric control circuit. In the figure, 10 is a semiconductor substrate, 21 and 22 are wavelength tunable laser diode elements, 21A and 22A are active area electrodes constituting the wavelength tunable laser diode elements, and similarly 21B and 22B are wavelength setting electrodes, 31 and 32.
Is an absorption type optical switching element, 40 is a Y type optical merging circuit, 50
Are absorption type optical modulator elements, 61 and 62 are thermal drift control electrodes, and 71 and 72 are wavelength setting electric control circuits.
【００１０】図４および図５は、図３に示した本発明に
よる半導体光源装置の一実施例の半導体モノリシック素
子部分について構造を示した一部断面視した斜視図およ
び要部の断面図である。図中、１００は基板となるｎ型
ＩｎＰ層、１０１はｐ型ＩｎＧａＡｓ層、１０２はｐ型
ＩｎＰ層、１０３は波長可変レーザダイオード素子の活
性層となる２種類の組成のＩｎＧａＡｓＰ層の多重積層
によって構成された多重量子井戸層、１０４は吸収型光
スイッチ素子および吸収型光変調器素子の光吸収層とな
る２種類の組成のＩｎＧａＡｓＰ層の多重積層によって
構成された多重量子井戸層、１０５は１０４で示された
多重量子井戸層に回折格子を形成することによって構成
した波長設定用ブラッグ反射鏡層、１０６は透明光導波
路層となるＩｎＧａＡｓＰ層、１０７は透明光導波路の
損失を低減するためのアンドープＩｎＰ層、１１０は吸
収型光スイッチ素子および吸収型変調器素子のポンディ
ングパッド電極部分の浮遊容量を低減するためのポリイ
ミド層、１２０は裏面側電極である。図４および図５に
は示されていないが、吸収型光変調器素子５０の断面構
造は、吸収型光スイッチ素子３１および３２と同一であ
る。また熱ドリフト制御用電極６１および６２直下の構
造は、波長設定用電極２１Ｂおよび２２Ｂ直下の構造と
同一である。FIG. 4 and FIG. 5 are a partially sectional perspective view and a sectional view of a main portion showing the structure of a semiconductor monolithic element portion of the embodiment of the semiconductor light source device according to the present invention shown in FIG. . In the figure, 100 is an n-type InP layer serving as a substrate, 101 is a p-type InGaAs layer, 102 is a p-type InP layer, and 103 is an InGaAsP layer of two kinds of compositions serving as an active layer of a wavelength tunable laser diode element. The multi-quantum well layer 104 is composed of 104, and the multi-quantum well layer 104 is composed of multi-layers of InGaAsP layers of two kinds of compositions to be the light absorption layers of the absorption type optical switch element and the absorption type optical modulator element. , A wavelength setting Bragg reflector layer formed by forming a diffraction grating in the multiple quantum well layer, 106 is an InGaAsP layer to be a transparent optical waveguide layer, and 107 is undoped for reducing the loss of the transparent optical waveguide. The InP layer 110 reduces the stray capacitance of the bonding pad electrode portion of the absorption type optical switch element and the absorption type modulator element. Polyimide layer because, 120 is a back-side electrode. Although not shown in FIGS. 4 and 5, the sectional structure of the absorption type optical modulator element 50 is the same as that of the absorption type optical switching elements 31 and 32. The structure directly below the thermal drift control electrodes 61 and 62 is the same as the structure directly below the wavelength setting electrodes 21B and 22B.
【００１１】次に、図３に示した実施例における装置の
動作について説明する。Next, the operation of the apparatus in the embodiment shown in FIG. 3 will be described.
【００１２】波長可変レーザダイオード素子２１および
２２は、それぞれ所要のパワー、所要の波長で発振する
ように、活性領域電極と波長設定用電極に電流が注入さ
れている。熱ドリフト制御用電極６１および６２には、
後に詳しく示す方法によって制御された電流が注入され
ている。波長可変レーザダイオード素子２１および２２
によって発せられたレーザ光は、吸収型光スイッチ素子
３１および３２によって一方が選択され、Ｙ型光合流回
路４０を通して吸収型光変調器素子５０に導かれ、変調
された光信号として出射される。出射信号光の波長の切
り換えは、吸収型光スイッチ素子３１および３２のｏｎ
／ｏｆｆの組み合わせを反転することによって行う。送
信光信号の波長を時系列上で任意に設定するためには、
吸収型光スイッチ素子のｏｎ／ｏｆｆ反転後に選択され
ていない側の波長可変レーザダイオード素子の波長を設
定し、次のｏｎ／ｏｆｆ反転まで待機状態にするという
動作を繰り返せばよい。In the wavelength tunable laser diode elements 21 and 22, current is injected into the active region electrode and the wavelength setting electrode so that they oscillate with a required power and a required wavelength, respectively. The thermal drift control electrodes 61 and 62 include
A current controlled by the method described in detail later is injected. Tunable laser diode elements 21 and 22
One of the laser beams emitted by is selected by the absorption type optical switching elements 31 and 32, guided to the absorption type optical modulator element 50 through the Y type optical merging circuit 40, and emitted as a modulated optical signal. The wavelength of the outgoing signal light is switched by turning on the absorption type optical switch elements 31 and 32.
This is done by reversing the combination of / off. To arbitrarily set the wavelength of the transmitted optical signal on the time series,
The operation of setting the wavelength of the wavelength tunable laser diode element on the non-selected side after on / off inversion of the absorption type optical switching element and putting it in a standby state until the next on / off inversion may be repeated.
【００１３】以上の波長設定の際に、波長設定用電極２
１Ｂ，２２Ｂ、熱ドリフト制御用電極６１，６２に注入
される電流量は、以下のように決定される。When setting the above wavelength, the wavelength setting electrode 2
The amount of current injected into the 1B and 22B and the thermal drift control electrodes 61 and 62 is determined as follows.
【００１４】図３の記号に従って波長設定用電極２１
Ｂ，２２Ｂに注入される電流をそれぞれＩ21B ，Ｉ
22B 、熱ドリフト制御用電極６１，６２に注入される電
流をそれぞれＩ61，Ｉ62とすると、それらの間には次の
関係を保たせる。Ｉｃｏｎｓｔはある一定の電流とす
る。The wavelength setting electrode 21 according to the symbol of FIG.
The currents injected into B and 22B are respectively I 21B and I
Letting the currents injected into the electrodes 22B and the thermal drift control electrodes 61 and 62 be I 61 and I 62 , respectively, the following relationship is maintained between them. Iconst is a constant current.
【００１５】[0015]
【数１】 Ｉ21B ＋αＩ61＝Ｉｃｏｎｓｔ Ｉ22B ＋αＩ62＝Ｉｃｏｎｓｔ ここで、αは、波長設定用電極２１Ｂ，２２Ｂと熱ドリ
フト制御用電極６１，６２における一定電流注入時の発
熱量の違いを補正するための係数であり、実際には差動
ＡＭＰの利得を初期設定時に調整することにより決定さ
れる。初期設定後、上記の電流バランスを満たす動作は
波長設定用電気制御回路７１および７２によって自動的
に行われる。## EQU1 ## I 21B + αI 61 = Iconst I 22B + αI 62 = Iconst Here, α corrects the difference in the amount of heat generated when a constant current is injected between the wavelength setting electrodes 21B and 22B and the thermal drift control electrodes 61 and 62. And is actually determined by adjusting the gain of the differential AMP at the time of initial setting. After the initial setting, the operation for satisfying the above current balance is automatically performed by the wavelength setting electric control circuits 71 and 72.
【００１６】以上の動作を図６に模式的に示す。本発明
の装置により、図６のように任意の波長の送信光信号列
を次々に出力する場合、各波長設定用電極、熱ドリフト
制御用電極に注入される電流量および吸収型光スイッチ
素子のｏｎ／ｏｆｆの組み合わせを表１に示す。The above operation is schematically shown in FIG. When the transmission optical signal train of an arbitrary wavelength is sequentially output by the device of the present invention as shown in FIG. 6, the amount of current injected into each wavelength setting electrode, the thermal drift control electrode, and the absorption type optical switch element are set. Table 1 shows the on / off combinations.
【００１７】[0017]
【表１】 [Table 1]
【００１８】[0018]
【発明の効果】以上説明したように、本発明の半導体光
源装置は、同一半導体基板上に単純な素子を組み合わせ
て構成され、簡単な制御回路で動作可能であるため、以
下に示すような効果を奏するものである。As described above, the semiconductor light source device of the present invention is constructed by combining simple elements on the same semiconductor substrate and can operate with a simple control circuit. Therefore, the following effects are obtained. Is played.
【００１９】（１）光ファイバとの接続点が１箇所のみ
であるため高効率であり、高精度を要する組み立て箇所
が少ない。(1) Since there is only one connection point with the optical fiber, the efficiency is high and the number of assembling points requiring high accuracy is small.
【００２０】（２）吸収型光スイッチと吸収型光変調器
は本質的に同一素子であるため、制作工程が単純であ
り、高信頼性、低価格が同時に実現できる。(2) Since the absorption type optical switch and the absorption type optical modulator are essentially the same element, the manufacturing process is simple, and high reliability and low price can be realized at the same time.
【００２１】（３）熱ドリフト制御用電極を有するた
め、波長設定が簡単な電気回路のみで可能である。(3) Since the thermal drift control electrode is provided, the wavelength can be set only by an electric circuit which is simple.
【図１】従来の高速波長切換光源の一例を示す構成図で
ある。FIG. 1 is a configuration diagram showing an example of a conventional high-speed wavelength switching light source.
【図２】従来の高速波長切換光源に用いられる波長制御
装置の一例を示す構成図である。FIG. 2 is a configuration diagram showing an example of a wavelength control device used in a conventional high-speed wavelength switching light source.
【図３】本発明の実施例に係る半導体光源装置を示す構
成図である。FIG. 3 is a configuration diagram showing a semiconductor light source device according to an embodiment of the present invention.
【図４】本発明の実施例に係る半導体光源装置の半導体
モノリシック素子部分の構造を示す一部断面視した斜視
図である。FIG. 4 is a partial cross-sectional perspective view showing a structure of a semiconductor monolithic element portion of a semiconductor light source device according to an embodiment of the present invention.
【図５】図４のＸ−Ｘ′線に沿う断面図である。5 is a cross-sectional view taken along the line XX 'of FIG.
【図６】本発明の実施例による動作を説明するための模
式図である。FIG. 6 is a schematic diagram for explaining an operation according to the embodiment of the present invention.
１０ 半導体基板 ２１，２２ 波長可変レーザダイオード素子 ２１Ａ，２２Ａ 波長可変レーザダイオード素子を構成
する活性領域電極 ２１Ｂ，２２Ｂ 波長可変レーザダイオード素子を構成
する波長設定用電極 ３１，３２ 吸収型光スイッチ素子 ４０ Ｙ型光合流回路 ５０ 吸収型光変調器素子 ６１，６２ 熱ドリフト制御用電極 ７１，７２ 波長設定用電気制御回路 １００ ｎ型ＩｎＰ層 １０１ ｐ型ＩｎＧａＡｓ層 １０２ ｐ型ＩｎＰ層 １０３ 波長可変レーザダイオード素子の活性層となる
多重量子井戸層 １０４ 吸収型光スイッチ素子および吸収型光変調器素
子の光吸収層となる多重量子井戸層 １０５ 波長設定用ブラッグ反射鏡層 １０６ 透明光導波路層となるＩｎＧａＡｓＰ層 １０７ アンドープＩｎＰ層 １１０ ポリイミド層 １２０ 裏面側電極10 Semiconductor Substrate 21,22 Wavelength Tunable Laser Diode Element 21A, 22A Active Region Electrodes 21B, 22B Wavelength Setting Electrodes 31,32 Configuring Wavelength Tunable Laser Diode Element Absorption Optical Switch Element 40Y Type optical merging circuit 50 absorption type optical modulator element 61,62 thermal drift control electrode 71,72 wavelength setting electric control circuit 100 n-type InP layer 101 p-type InGaAs layer 102 p-type InP layer 103 wavelength tunable laser diode element Multiple quantum well layer 104 to be an active layer 104 Multiple quantum well layer to be a light absorption layer of an absorption type optical switch element and an absorption type optical modulator element 105 Bragg reflector layer for wavelength setting 106 InGaAsP layer to be a transparent optical waveguide layer 107 Undoped InP layer 110 Polyimide layer 120 Back surface Side electrode
───────────────────────────────────────────────────── フロントページの続き (72)発明者 吉國 裕三 東京都千代田区内幸町１丁目１番６号 日 本電信電話株式会社内 ─────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Yuzo Yoshikuni 1-1-6 Uchisaiwaicho, Chiyoda-ku, Tokyo Nihon Telegraph and Telephone Corporation
Claims (3)
イオード素子と吸収型光スイッチ素子各１個が直列に配
置された単位素子を並列に複数組配置し、さらに該単位
素子の複数の光出力端子を１つの光出力端子にまとめる
ための光合流素子あるいは光カプラ素子と、出力光を変
調するための吸収型光変調器素子とを配置したことを特
徴とする半導体光源装置。1. A plurality of unit elements in each of which a wavelength tunable laser diode element and an absorption type optical switching element are arranged in series are arranged in parallel on the same semiconductor substrate, and a plurality of optical outputs of the unit elements are arranged. A semiconductor light source device comprising: an optical merging element or an optical coupler element for collecting the terminals into one optical output terminal; and an absorption type optical modulator element for modulating the output light.
子の波長設定用電極に隣接して熱ドリフト制御用電極を
設けた素子を構成し、さらに、該波長設定用電極に注入
する電流量と該熱ドリフト制御用電極に注入する電流量
を相補的に制御する電気回路とを組み合わせて構成した
ことを特徴とする請求項１に記載の半導体光源装置。2. An element in which a thermal drift control electrode is provided adjacent to the wavelength setting electrode of each of the wavelength tunable laser diode elements, and the amount of current injected into the wavelength setting electrode and the heat The semiconductor light source device according to claim 1, wherein the semiconductor light source device is configured by being combined with an electric circuit that complementarily controls the amount of current injected into the drift control electrode.
イオード素子と吸収型光スイッチ素子各１個が直列に配
置された単位素子を並列に複数組配置し、さらに当該単
位素子の複数の光出力端子を１つの光出力端子にまとめ
るための光合流素子あるいは光カプラ素子と、出力光を
変調するための吸収型光変調器素子とを配置してなる半
導体光源装置の駆動方法であって、 前記個々の波長可変レーザダイオード素子の波長設定用
電極に隣接して熱ドリフト制御用電極を設け、当該波長
設定用電極に注入する電流量と当該熱ドリフト制御用電
極に注入する電流とを相補的に制御して発振波長の熱ド
リフトを制御することを特徴とする半導体光源装置の駆
動方法。3. A plurality of unit elements, each having a wavelength tunable laser diode element and an absorption type optical switch element arranged in series, are arranged in parallel on the same semiconductor substrate, and a plurality of optical outputs of the unit elements are arranged. A method of driving a semiconductor light source device, comprising: an optical merging element or an optical coupler element for collecting terminals into one optical output terminal; and an absorption type optical modulator element for modulating output light. An electrode for thermal drift control is provided adjacent to the wavelength setting electrode of each wavelength tunable laser diode element, and the amount of current injected into the wavelength setting electrode and the current injected into the thermal drift control electrode are complemented. A method for driving a semiconductor light source device, characterized by controlling the thermal drift of the oscillation wavelength.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25148593A JP3257185B2 (en) | 1993-10-07 | 1993-10-07 | Semiconductor light source device and driving method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25148593A JP3257185B2 (en) | 1993-10-07 | 1993-10-07 | Semiconductor light source device and driving method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07106548A true JPH07106548A (en) | 1995-04-21 |
| JP3257185B2 JP3257185B2 (en) | 2002-02-18 |
Family
ID=17223511
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25148593A Expired - Lifetime JP3257185B2 (en) | 1993-10-07 | 1993-10-07 | Semiconductor light source device and driving method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3257185B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006047264A (en) * | 2004-07-09 | 2006-02-16 | Nippon Telegr & Teleph Corp <Ntt> | Optical coherent tomographic unit, variable-wavelength light generator used therefor, and variable-wavelength light-emitting light source |
| EP2120301A1 (en) * | 2007-03-08 | 2009-11-18 | Nippon Telegraph and Telephone Corporation | Wavelength variable semiconductor laser element, and apparatus and method for controlling the same |
| WO2010064516A1 (en) * | 2008-12-01 | 2010-06-10 | 富士フイルム株式会社 | Optical three-dimensional structure image device and optical signal processing method therefor |
| US20130182731A1 (en) * | 2010-09-27 | 2013-07-18 | Oclaro Technology Limited | Fast Wavelength Switching |
| JP2015050756A (en) * | 2013-09-04 | 2015-03-16 | 日本電信電話株式会社 | Wavelength variable optical transmitter, wavelength variable optical receiver, optical communication system, wavelength variable optical transmitting method, and wavelength variable optical receiving method |
-
1993
- 1993-10-07 JP JP25148593A patent/JP3257185B2/en not_active Expired - Lifetime
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006047264A (en) * | 2004-07-09 | 2006-02-16 | Nippon Telegr & Teleph Corp <Ntt> | Optical coherent tomographic unit, variable-wavelength light generator used therefor, and variable-wavelength light-emitting light source |
| EP2120301A1 (en) * | 2007-03-08 | 2009-11-18 | Nippon Telegraph and Telephone Corporation | Wavelength variable semiconductor laser element, and apparatus and method for controlling the same |
| US7961769B2 (en) | 2007-03-08 | 2011-06-14 | Nippon Telegraph And Telephone Corporation | Wavelength tunable semiconductor laser device, controller for the same, and control method for the same |
| EP2348588A3 (en) * | 2007-03-08 | 2012-02-22 | Nippon Telegraph And Telephone Corporation | Wavelength variable semiconductor laser element, apparatus and method for controlling the same |
| EP2120301B1 (en) * | 2007-03-08 | 2012-08-22 | Nippon Telegraph and Telephone Corporation | Wavelength tunable semiconductor laser device, controller for the same, and control method for the same |
| WO2010064516A1 (en) * | 2008-12-01 | 2010-06-10 | 富士フイルム株式会社 | Optical three-dimensional structure image device and optical signal processing method therefor |
| JP2010127902A (en) * | 2008-12-01 | 2010-06-10 | Fujifilm Corp | Optical three-dimensional structure image device and optical signal processing method therefor |
| US20130182731A1 (en) * | 2010-09-27 | 2013-07-18 | Oclaro Technology Limited | Fast Wavelength Switching |
| JP2015050756A (en) * | 2013-09-04 | 2015-03-16 | 日本電信電話株式会社 | Wavelength variable optical transmitter, wavelength variable optical receiver, optical communication system, wavelength variable optical transmitting method, and wavelength variable optical receiving method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3257185B2 (en) | 2002-02-18 |
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