JPH0227829B2 - - Google Patents

Info

Publication number
JPH0227829B2
JPH0227829B2 JP55166236A JP16623680A JPH0227829B2 JP H0227829 B2 JPH0227829 B2 JP H0227829B2 JP 55166236 A JP55166236 A JP 55166236A JP 16623680 A JP16623680 A JP 16623680A JP H0227829 B2 JPH0227829 B2 JP H0227829B2
Authority
JP
Japan
Prior art keywords
layer
type
grooves
substrate
stripe
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP55166236A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5789290A (en
Inventor
Saburo Yamamoto
Kazuhisa Murata
Hiroshi Hayashi
Takuo Takenaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP16623680A priority Critical patent/JPS5789290A/ja
Publication of JPS5789290A publication Critical patent/JPS5789290A/ja
Publication of JPH0227829B2 publication Critical patent/JPH0227829B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode

Landscapes

  • Semiconductor Lasers (AREA)
JP16623680A 1980-11-25 1980-11-25 Semiconductor laser element Granted JPS5789290A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16623680A JPS5789290A (en) 1980-11-25 1980-11-25 Semiconductor laser element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16623680A JPS5789290A (en) 1980-11-25 1980-11-25 Semiconductor laser element

Publications (2)

Publication Number Publication Date
JPS5789290A JPS5789290A (en) 1982-06-03
JPH0227829B2 true JPH0227829B2 (zh) 1990-06-20

Family

ID=15827630

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16623680A Granted JPS5789290A (en) 1980-11-25 1980-11-25 Semiconductor laser element

Country Status (1)

Country Link
JP (1) JPS5789290A (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2821150B2 (ja) * 1988-10-21 1998-11-05 シャープ株式会社 半導体レーザ素子
JP2923235B2 (ja) * 1995-10-23 1999-07-26 シャープ株式会社 半導体レーザ素子

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5156188A (ja) * 1974-11-13 1976-05-17 Hitachi Ltd Handotaireezasochi
JPS5158879A (zh) * 1974-11-19 1976-05-22 Nippon Telegraph & Telephone
JPS5290280A (en) * 1976-01-22 1977-07-29 Nec Corp Semiconductor laser element
JPS55125690A (en) * 1979-03-22 1980-09-27 Nec Corp Semiconductor laser

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5156188A (ja) * 1974-11-13 1976-05-17 Hitachi Ltd Handotaireezasochi
JPS5158879A (zh) * 1974-11-19 1976-05-22 Nippon Telegraph & Telephone
JPS5290280A (en) * 1976-01-22 1977-07-29 Nec Corp Semiconductor laser element
JPS55125690A (en) * 1979-03-22 1980-09-27 Nec Corp Semiconductor laser

Also Published As

Publication number Publication date
JPS5789290A (en) 1982-06-03

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