JPH02264448A - Semiconductor integrated circuit - Google Patents
Semiconductor integrated circuitInfo
- Publication number
- JPH02264448A JPH02264448A JP8591789A JP8591789A JPH02264448A JP H02264448 A JPH02264448 A JP H02264448A JP 8591789 A JP8591789 A JP 8591789A JP 8591789 A JP8591789 A JP 8591789A JP H02264448 A JPH02264448 A JP H02264448A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- mark
- defect detection
- semiconductor integrated
- integrated circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 9
- 238000001514 detection method Methods 0.000 abstract description 35
- 230000007547 defect Effects 0.000 abstract description 26
- 238000005259 measurement Methods 0.000 abstract description 8
- 238000000034 method Methods 0.000 abstract 1
- 230000000052 comparative effect Effects 0.000 description 4
- 238000007689 inspection Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
Abstract
Description
〔産業上の利用分野J
本発明は半導体集積回路パターンの配置精度及びパター
ン欠陥の検出に関する。
[従来の技術]
従来の半導体集積回路におい(は、パターン欠陥検出用
位置検出マークとパターン配置精度測定用マークは異な
る形状のパターンが異なる位置に配置されていた。
〔発明が解決しようとする課題]
しかし、前述の従来技術では、パターン欠陥検出用位置
検出マークとパターン配置精度測定用マークの両方を配
置しなければならないため、工数の増加、あるいは、チ
ップサイズの増加等の問題点を有する。そこで本発明は
このような問題点を解決するもので、その目的とすると
ころは、チップサイズ及びデータ作成工数に影響を及ぼ
さず、パターン配置精度及びパターン欠陥検出効率の向
上を可能にするマークの形状及び配置条件を提供すると
ころにある。[Industrial Application Field J] The present invention relates to the placement accuracy of semiconductor integrated circuit patterns and the detection of pattern defects. [Prior Art] In a conventional semiconductor integrated circuit, a position detection mark for pattern defect detection and a mark for measuring pattern placement accuracy are arranged in different positions with patterns having different shapes. [Problems to be Solved by the Invention] ] However, in the above-mentioned conventional technology, since both the position detection mark for pattern defect detection and the mark for measuring pattern placement accuracy must be placed, there are problems such as an increase in the number of man-hours or an increase in chip size. The present invention is intended to solve these problems, and its purpose is to create a mark that does not affect the chip size or the number of man-hours for creating data, and that enables improvement in pattern placement accuracy and pattern defect detection efficiency. The purpose is to provide the shape and placement conditions.
本発明の半導体集積回路は、パターン配置精度測定用バ
クーンとパターン欠陥を検出する比較検査式欠陥検出装
置の位置検出マークをL型の同一形状で兼用し、かつ、
チップの四隅に、スクライブ領域端より回路パターン側
に少な(ともIgm以上離して配置することを特徴とす
る特In the semiconductor integrated circuit of the present invention, the position detection mark of the pattern placement accuracy measurement bag and the comparative inspection type defect detection device for detecting pattern defects have the same L-shape, and
At the four corners of the chip, there is a special feature that the scribe area is placed closer to the circuit pattern side than the edge of the scribe area (in both cases, at least Igm apart).
本発明の上記の構成によれば、パターン配置精度測定用
パターンとパターン欠陥を検出する比較検査式欠陥検出
装置の位置検出マークを兼用することによりデータ作成
工数及びチップサイズの減少が可能となる。
【実 施 例】
以下1本発明について、実施例に基づいて説明する。
第1図及び第2図は本発明の実施例であり、第1図はパ
ターン欠陥検出用位置検出マーク兼パターン配置精度測
定用マークの形状例である。第2図は、前記パターン欠
陥検出用位置検出マーク兼パターン配置精度測定用マー
クの配置の例である。
101は回路パターン部分であり、102はスクライブ
領域、103はパターン欠陥検出用位置検出マーク兼パ
ターン配置精度測定用マークである。パターン欠陥検出
用位置検出マーク兼パターン配置精度測定用マーク10
3はスクライブ領域102の端から少なくとも1μm以
上離れて配置されている。
パターン配置精度測定用パターンは、X方向及びY方向
の座標がわかればよく、そのためには、少なくとも、X
方向に平行な長方形とY方向に平行な長方形が配置され
ていればよい、ただし、光波測長の場合、前記長方形の
短辺と平行方向に走査するため、前記長方形の長辺と隣
接する他のパターンとの間に適当な間隔が必要となり、
その値は、少なくとも1μm以上必要である。また、パ
ターン欠陥を検出する比較検査式欠陥検出装置の位置検
出マークは、回路パターンとスクライブ領域の境界を示
すマークであればよい、故に、パターン配置精度測定用
パターンは、L型のパターン形状で、スクライブ領域よ
り1μm以上離して配置することで対応可能であり、パ
ターン欠陥を検出する比較検査式欠陥装置の位置検出マ
ークは、前記り型パターンを回路パターンとスクライブ
領域の境界付近に配置すればよい。
第3図は従来例であり、104はパターン欠陥検出用位
置検出マークであり、105はパターン配置精度測定用
マークである。パターン欠陥検出用位置検出マーク10
4及びパターン配置精度測定用マーク105は1回路パ
ターン101内に別々に配置されている。
〔発明の効果]
以上述べたように発明によれば、パターン欠陥検出用位
置検出マークとパターン配置精度測定用マークを兼用に
することにより、チップサイズ及び、データ作成工数を
増加させることなく、所定の位置検出及び配置精度の測
定目的を達成することが可能となる。
第3図は従来例を示す図。
101・・・回路バクーン部分
102・・・スクライブ領域
103・・・パターン欠陥検出用位置検出マーク兼パタ
ーン配置精度測定用
マーク
104・・・パターン欠陥検出用位置検出マーク
105・・・パターン配置精度測定用マーク以上According to the above configuration of the present invention, by using the pattern for measuring pattern placement accuracy and the position detection mark of the comparative inspection type defect detection device for detecting pattern defects, it is possible to reduce the number of data creation steps and chip size. [Example] The present invention will be described below based on an example. 1 and 2 show examples of the present invention, and FIG. 1 shows an example of the shape of a position detection mark for pattern defect detection and a mark for measuring pattern placement accuracy. FIG. 2 is an example of the arrangement of the pattern defect detection position detection mark and pattern placement accuracy measurement mark. 101 is a circuit pattern portion, 102 is a scribe area, and 103 is a position detection mark for detecting pattern defects and a mark for measuring pattern placement accuracy. Position detection mark for detecting pattern defects and mark for measuring pattern placement accuracy 10
3 is arranged at least 1 μm or more away from the edge of the scribe area 102. It is only necessary to know the coordinates of the X direction and Y direction of the pattern for pattern placement accuracy measurement.
It is sufficient that a rectangle parallel to the direction and a rectangle parallel to the Y direction are arranged. However, in the case of light wave length measurement, since scanning is performed in a direction parallel to the short side of the rectangle, other rectangles adjacent to the long side of the rectangle are arranged. An appropriate spacing is required between the pattern of
The value must be at least 1 μm or more. In addition, the position detection mark of the comparative inspection type defect detection device that detects pattern defects may be any mark that indicates the boundary between the circuit pattern and the scribe area.Therefore, the pattern for measuring pattern placement accuracy is an L-shaped pattern. This can be done by placing the pattern 1 μm or more away from the scribe area, and the position detection mark of the comparative inspection type defect device that detects pattern defects can be achieved by placing the above-mentioned pattern near the boundary between the circuit pattern and the scribe area. good. FIG. 3 shows a conventional example, in which 104 is a position detection mark for pattern defect detection, and 105 is a mark for measuring pattern placement accuracy. Position detection mark 10 for pattern defect detection
4 and the mark 105 for measuring pattern placement accuracy are separately arranged within one circuit pattern 101. [Effects of the Invention] As described above, according to the invention, by using both the position detection mark for detecting pattern defects and the mark for measuring pattern placement accuracy, a predetermined number of steps can be achieved without increasing the chip size or the number of man-hours for creating data. It becomes possible to achieve the purpose of position detection and measurement of placement accuracy. FIG. 3 is a diagram showing a conventional example. 101...Circuit Bakun part 102...Scribe area 103...Position detection mark for pattern defect detection and pattern placement accuracy measurement mark 104...Position detection mark for pattern defect detection 105...Pattern placement accuracy measurement mark or above
第1図は本発明の半導体集積回路のパターン欠陥検出用
位置検出マーク兼パターン配置精度測定用マークの形状
例を示す図。
第2図は、パターン欠陥検出用位置検出マーク兼パター
ン配置精度測定用マークの配置例を示す図。
出願人 セイコーエプソン株式会社
代理人 弁理士 鈴 木 喜三部(他1名)第
図FIG. 1 is a diagram showing an example of the shape of a position detection mark for pattern defect detection and a mark for measuring pattern placement accuracy in a semiconductor integrated circuit according to the present invention. FIG. 2 is a diagram showing an example of the arrangement of position detection marks for detecting pattern defects and marks for measuring pattern placement accuracy. Applicant Seiko Epson Co., Ltd. Agent Patent Attorney Kizobe Suzuki (and 1 other person) Figure
Claims (1)
れたスクライブ領域を有する半導体集積回路において、
L型のパターンを各チップの四隅かつ、スクライブ領域
端より回路パターン側に少なくとも1μm以上離して配
置することを特徴とする半導体集積回路。In a semiconductor integrated circuit having a scribe area provided for separating the semiconductor integrated circuit into each chip,
A semiconductor integrated circuit characterized in that L-shaped patterns are arranged at the four corners of each chip at a distance of at least 1 μm from the edge of the scribe region toward the circuit pattern.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8591789A JPH02264448A (en) | 1989-04-05 | 1989-04-05 | Semiconductor integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8591789A JPH02264448A (en) | 1989-04-05 | 1989-04-05 | Semiconductor integrated circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH02264448A true JPH02264448A (en) | 1990-10-29 |
Family
ID=13872149
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8591789A Pending JPH02264448A (en) | 1989-04-05 | 1989-04-05 | Semiconductor integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH02264448A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0514675A1 (en) | 1991-04-22 | 1992-11-25 | Fuji Photo Film Co., Ltd. | Silver halide photographic materials and method for processing the same |
-
1989
- 1989-04-05 JP JP8591789A patent/JPH02264448A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0514675A1 (en) | 1991-04-22 | 1992-11-25 | Fuji Photo Film Co., Ltd. | Silver halide photographic materials and method for processing the same |
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