JPH02264448A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPH02264448A
JPH02264448A JP8591789A JP8591789A JPH02264448A JP H02264448 A JPH02264448 A JP H02264448A JP 8591789 A JP8591789 A JP 8591789A JP 8591789 A JP8591789 A JP 8591789A JP H02264448 A JPH02264448 A JP H02264448A
Authority
JP
Japan
Prior art keywords
pattern
mark
defect detection
semiconductor integrated
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8591789A
Other languages
Japanese (ja)
Inventor
Kunio Katsuno
勝野 邦夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP8591789A priority Critical patent/JPH02264448A/en
Publication of JPH02264448A publication Critical patent/JPH02264448A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To contrive the improvement of the accuracy of pattern arrangement and a pattern defect detection efficiency by a method wherein the L-type patterns are arranged at the four corners of each chip and apart 1mum or more from the end of a scribing region to the side of a circuit pattern. CONSTITUTION:A scribing region 102 is provided for dividing a semiconductor integrated circuit into chips. Marks 103 for pattern arrangement accuracy measurement use which are used in combination as position detecting marks for pattern defect detection use are formed into an L-type pattern configuration, are provided at the 4 corners of each chip and are arranged apart at least 1mum or more from the end of the region 102 to the side of a circuit pattern part 101. In such a way, the accuracy of the pattern arrangement and the pattern defect detection efficiency can be improved without increasing the size of the chip and a manhour for the creation of data.

Description

【発明の詳細な説明】[Detailed description of the invention]

〔産業上の利用分野J 本発明は半導体集積回路パターンの配置精度及びパター
ン欠陥の検出に関する。 [従来の技術] 従来の半導体集積回路におい(は、パターン欠陥検出用
位置検出マークとパターン配置精度測定用マークは異な
る形状のパターンが異なる位置に配置されていた。 〔発明が解決しようとする課題] しかし、前述の従来技術では、パターン欠陥検出用位置
検出マークとパターン配置精度測定用マークの両方を配
置しなければならないため、工数の増加、あるいは、チ
ップサイズの増加等の問題点を有する。そこで本発明は
このような問題点を解決するもので、その目的とすると
ころは、チップサイズ及びデータ作成工数に影響を及ぼ
さず、パターン配置精度及びパターン欠陥検出効率の向
上を可能にするマークの形状及び配置条件を提供すると
ころにある。
[Industrial Application Field J] The present invention relates to the placement accuracy of semiconductor integrated circuit patterns and the detection of pattern defects. [Prior Art] In a conventional semiconductor integrated circuit, a position detection mark for pattern defect detection and a mark for measuring pattern placement accuracy are arranged in different positions with patterns having different shapes. [Problems to be Solved by the Invention] ] However, in the above-mentioned conventional technology, since both the position detection mark for pattern defect detection and the mark for measuring pattern placement accuracy must be placed, there are problems such as an increase in the number of man-hours or an increase in chip size. The present invention is intended to solve these problems, and its purpose is to create a mark that does not affect the chip size or the number of man-hours for creating data, and that enables improvement in pattern placement accuracy and pattern defect detection efficiency. The purpose is to provide the shape and placement conditions.

【課題を解決するための手段】[Means to solve the problem]

本発明の半導体集積回路は、パターン配置精度測定用バ
クーンとパターン欠陥を検出する比較検査式欠陥検出装
置の位置検出マークをL型の同一形状で兼用し、かつ、
チップの四隅に、スクライブ領域端より回路パターン側
に少な(ともIgm以上離して配置することを特徴とす
る特
In the semiconductor integrated circuit of the present invention, the position detection mark of the pattern placement accuracy measurement bag and the comparative inspection type defect detection device for detecting pattern defects have the same L-shape, and
At the four corners of the chip, there is a special feature that the scribe area is placed closer to the circuit pattern side than the edge of the scribe area (in both cases, at least Igm apart).

【作 用〕[For production]

本発明の上記の構成によれば、パターン配置精度測定用
パターンとパターン欠陥を検出する比較検査式欠陥検出
装置の位置検出マークを兼用することによりデータ作成
工数及びチップサイズの減少が可能となる。 【実 施 例】 以下1本発明について、実施例に基づいて説明する。 第1図及び第2図は本発明の実施例であり、第1図はパ
ターン欠陥検出用位置検出マーク兼パターン配置精度測
定用マークの形状例である。第2図は、前記パターン欠
陥検出用位置検出マーク兼パターン配置精度測定用マー
クの配置の例である。 101は回路パターン部分であり、102はスクライブ
領域、103はパターン欠陥検出用位置検出マーク兼パ
ターン配置精度測定用マークである。パターン欠陥検出
用位置検出マーク兼パターン配置精度測定用マーク10
3はスクライブ領域102の端から少なくとも1μm以
上離れて配置されている。 パターン配置精度測定用パターンは、X方向及びY方向
の座標がわかればよく、そのためには、少なくとも、X
方向に平行な長方形とY方向に平行な長方形が配置され
ていればよい、ただし、光波測長の場合、前記長方形の
短辺と平行方向に走査するため、前記長方形の長辺と隣
接する他のパターンとの間に適当な間隔が必要となり、
その値は、少なくとも1μm以上必要である。また、パ
ターン欠陥を検出する比較検査式欠陥検出装置の位置検
出マークは、回路パターンとスクライブ領域の境界を示
すマークであればよい、故に、パターン配置精度測定用
パターンは、L型のパターン形状で、スクライブ領域よ
り1μm以上離して配置することで対応可能であり、パ
ターン欠陥を検出する比較検査式欠陥装置の位置検出マ
ークは、前記り型パターンを回路パターンとスクライブ
領域の境界付近に配置すればよい。 第3図は従来例であり、104はパターン欠陥検出用位
置検出マークであり、105はパターン配置精度測定用
マークである。パターン欠陥検出用位置検出マーク10
4及びパターン配置精度測定用マーク105は1回路パ
ターン101内に別々に配置されている。 〔発明の効果] 以上述べたように発明によれば、パターン欠陥検出用位
置検出マークとパターン配置精度測定用マークを兼用に
することにより、チップサイズ及び、データ作成工数を
増加させることなく、所定の位置検出及び配置精度の測
定目的を達成することが可能となる。 第3図は従来例を示す図。 101・・・回路バクーン部分 102・・・スクライブ領域 103・・・パターン欠陥検出用位置検出マーク兼パタ
ーン配置精度測定用 マーク 104・・・パターン欠陥検出用位置検出マーク 105・・・パターン配置精度測定用マーク以上
According to the above configuration of the present invention, by using the pattern for measuring pattern placement accuracy and the position detection mark of the comparative inspection type defect detection device for detecting pattern defects, it is possible to reduce the number of data creation steps and chip size. [Example] The present invention will be described below based on an example. 1 and 2 show examples of the present invention, and FIG. 1 shows an example of the shape of a position detection mark for pattern defect detection and a mark for measuring pattern placement accuracy. FIG. 2 is an example of the arrangement of the pattern defect detection position detection mark and pattern placement accuracy measurement mark. 101 is a circuit pattern portion, 102 is a scribe area, and 103 is a position detection mark for detecting pattern defects and a mark for measuring pattern placement accuracy. Position detection mark for detecting pattern defects and mark for measuring pattern placement accuracy 10
3 is arranged at least 1 μm or more away from the edge of the scribe area 102. It is only necessary to know the coordinates of the X direction and Y direction of the pattern for pattern placement accuracy measurement.
It is sufficient that a rectangle parallel to the direction and a rectangle parallel to the Y direction are arranged. However, in the case of light wave length measurement, since scanning is performed in a direction parallel to the short side of the rectangle, other rectangles adjacent to the long side of the rectangle are arranged. An appropriate spacing is required between the pattern of
The value must be at least 1 μm or more. In addition, the position detection mark of the comparative inspection type defect detection device that detects pattern defects may be any mark that indicates the boundary between the circuit pattern and the scribe area.Therefore, the pattern for measuring pattern placement accuracy is an L-shaped pattern. This can be done by placing the pattern 1 μm or more away from the scribe area, and the position detection mark of the comparative inspection type defect device that detects pattern defects can be achieved by placing the above-mentioned pattern near the boundary between the circuit pattern and the scribe area. good. FIG. 3 shows a conventional example, in which 104 is a position detection mark for pattern defect detection, and 105 is a mark for measuring pattern placement accuracy. Position detection mark 10 for pattern defect detection
4 and the mark 105 for measuring pattern placement accuracy are separately arranged within one circuit pattern 101. [Effects of the Invention] As described above, according to the invention, by using both the position detection mark for detecting pattern defects and the mark for measuring pattern placement accuracy, a predetermined number of steps can be achieved without increasing the chip size or the number of man-hours for creating data. It becomes possible to achieve the purpose of position detection and measurement of placement accuracy. FIG. 3 is a diagram showing a conventional example. 101...Circuit Bakun part 102...Scribe area 103...Position detection mark for pattern defect detection and pattern placement accuracy measurement mark 104...Position detection mark for pattern defect detection 105...Pattern placement accuracy measurement mark or above

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の半導体集積回路のパターン欠陥検出用
位置検出マーク兼パターン配置精度測定用マークの形状
例を示す図。 第2図は、パターン欠陥検出用位置検出マーク兼パター
ン配置精度測定用マークの配置例を示す図。 出願人 セイコーエプソン株式会社 代理人 弁理士 鈴 木 喜三部(他1名)第 図
FIG. 1 is a diagram showing an example of the shape of a position detection mark for pattern defect detection and a mark for measuring pattern placement accuracy in a semiconductor integrated circuit according to the present invention. FIG. 2 is a diagram showing an example of the arrangement of position detection marks for detecting pattern defects and marks for measuring pattern placement accuracy. Applicant Seiko Epson Co., Ltd. Agent Patent Attorney Kizobe Suzuki (and 1 other person) Figure

Claims (1)

【特許請求の範囲】[Claims] 半導体集積回路を各々のチップに分離するために設けら
れたスクライブ領域を有する半導体集積回路において、
L型のパターンを各チップの四隅かつ、スクライブ領域
端より回路パターン側に少なくとも1μm以上離して配
置することを特徴とする半導体集積回路。
In a semiconductor integrated circuit having a scribe area provided for separating the semiconductor integrated circuit into each chip,
A semiconductor integrated circuit characterized in that L-shaped patterns are arranged at the four corners of each chip at a distance of at least 1 μm from the edge of the scribe region toward the circuit pattern.
JP8591789A 1989-04-05 1989-04-05 Semiconductor integrated circuit Pending JPH02264448A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8591789A JPH02264448A (en) 1989-04-05 1989-04-05 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8591789A JPH02264448A (en) 1989-04-05 1989-04-05 Semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPH02264448A true JPH02264448A (en) 1990-10-29

Family

ID=13872149

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8591789A Pending JPH02264448A (en) 1989-04-05 1989-04-05 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPH02264448A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0514675A1 (en) 1991-04-22 1992-11-25 Fuji Photo Film Co., Ltd. Silver halide photographic materials and method for processing the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0514675A1 (en) 1991-04-22 1992-11-25 Fuji Photo Film Co., Ltd. Silver halide photographic materials and method for processing the same

Similar Documents

Publication Publication Date Title
JP3634505B2 (en) Alignment mark placement method
JPH02264448A (en) Semiconductor integrated circuit
JPH07221166A (en) Alignment mark and electronic device having the same as well as manufacturing method thereof
US20080185741A1 (en) Semiconductor device having dummy pattern
JPH07221414A (en) Semiconductor circuit board
JP3104802B2 (en) Reference wafer for inspection
JPH05299484A (en) Semiconductor wafer
JPH02127641A (en) Reticle for semiconductor integrated circuit
JPH09127680A (en) Mask for exposure
JPS6396501A (en) Installation detecting device for chip parts
JP3528366B2 (en) Integrated circuit device
JPS63288009A (en) Wafer and method of controlling wafer treatment process
KR20020055943A (en) Method of aligning a mask with a wafer in a semiconductor device
JPH0845800A (en) Semiconductor wafer and its discrimination method
JP2560645B2 (en) Semiconductor device lead bending inspection method
JP2006134968A (en) Formation method of dividing position recognition mark, and semiconductor circuit board, manufacturing method of same, and base material of same, and liquid crystal display panel board, liquid crystal display, and manufacturing method of same
JPH02264450A (en) Semiconductor integrated circuit
JPH0499045A (en) Semiconductor wafer
JPS62291126A (en) Pattern recognition mark
JPH01280334A (en) Method for detecting location of semiconductor chip on semiconductor wafer
JP2005147773A (en) Pattern size measurement method
JPH03142820A (en) Manufacture of semiconductor device
JPS6017747A (en) Reticle for manufacturing semiconductor integrated circuit
KR19990000215A (en) Post mask inspection pattern
JPS63271915A (en) Semiconductor chip