JPH01280334A - Method for detecting location of semiconductor chip on semiconductor wafer - Google Patents

Method for detecting location of semiconductor chip on semiconductor wafer

Info

Publication number
JPH01280334A
JPH01280334A JP63083533A JP8353388A JPH01280334A JP H01280334 A JPH01280334 A JP H01280334A JP 63083533 A JP63083533 A JP 63083533A JP 8353388 A JP8353388 A JP 8353388A JP H01280334 A JPH01280334 A JP H01280334A
Authority
JP
Japan
Prior art keywords
semiconductor chip
location
semiconductor
mask area
detect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63083533A
Other languages
Japanese (ja)
Inventor
Hitoshi Shirata
白田　仁志
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Device Solutions Corp
Original Assignee
Toshiba Corp
Toshiba Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Microelectronics Corp filed Critical Toshiba Corp
Priority to JP63083533A priority Critical patent/JPH01280334A/en
Priority to KR1019890004445A priority patent/KR890016636A/en
Publication of JPH01280334A publication Critical patent/JPH01280334A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Image Analysis (AREA)
  • Dicing (AREA)

Abstract

PURPOSE:To detect a location of a semiconductor chip accurately and reliably even if there is some turbulence in a binary image, by a method wherein rectangular mask areas are established to cross at a right angle with dicing lines and the number of picture elements in the width direction is measured in the longitudinal direction and the location where the number of picture elements comes to the prefixed number or above or below is determined as the location of a border of the chip. CONSTITUTION:A reflected light of light irradiated on a semiconductor chip 1 is picked up and is made into binary codes by a binary coding device. Dicing lines 2 are detected based on the binary code image to detect the location of the semiconductor chip 1 on a semiconductor wafer. In such a location detecting method, rectangular mask areas 13 and 20 are establishment at the specified place crossing the dicing lines 2 at a right angle. The number 15 of picture elements in the width directions 14a and 21a of the mask areas 13 and 20 is measured along the length directions 14b and 21b of the mask areas 13 and 20. The locations 19 and 22 where the number 15 comes to the specified value 18 or above or below are determined the locations 1a and 1b of a border of one side of the semiconductor chip 1.

Description

【発明の詳細な説明】 〔発明のト１的〕 （産業上の利用分野） 本発明は、半導体ウェハ上の半導体チップの位置を検出
する位置検出方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Part 1 of the Invention] (Industrial Application Field) The present invention relates to a position detection method for detecting the position of a semiconductor chip on a semiconductor wafer.

（従来の技術） 半導体ウェハ上に形成された半導体チップは、このダイ
シングラインに沿って切断し個々に分離して使用される
が、この時に半導体ウェノ１上の半導体チップの位置を
検出する必要がある。(Prior Art) Semiconductor chips formed on a semiconductor wafer are cut along the dicing lines and used separately, but at this time it is necessary to detect the position of the semiconductor chips on the semiconductor wafer 1. be.

従来、この半導体ウェハ上の半導体チップの位置の検出
は、一般に以下のような方法で行われていた。Conventionally, the position of a semiconductor chip on a semiconductor wafer has generally been detected by the following method.

即ち、半導体ウェハ上の半導体チップを、真上及び斜め
方向から照射し、この反射光を光学カメラで撮像し、こ
れを２値化して記憶装置に記憶する。That is, a semiconductor chip on a semiconductor wafer is irradiated from directly above and diagonally, the reflected light is imaged by an optical camera, and the image is binarized and stored in a storage device.

この記憶された２値化データを平面で表した２値化画像
は、第５図に示すように、半導体チップ１は明るく、ダ
イシングライン２は暗く写し出され、その境界である半
導体ナツプ１の輪郭線１ａ。As shown in FIG. 5, in the binarized image that represents the stored binarized data on a plane, the semiconductor chip 1 is shown brightly, the dicing line 2 is shown darkly, and the outline of the semiconductor nap 1 that is the boundary between them is shown. Line 1a.

１ｂは直線でなくてはならない。1b must be a straight line.

この２値化画像に基づいて、゛ト導体チップ１の位置を
検出するのであるが、この縦の輪郭線１ａ（Ｘ座標）を
検出する時には、ｆＭ（Ｘ方向）の輪郭線１ｂに平行に
１画素の幅で検索範囲（ライン）を設定し、この検索範
囲に沿って検索線３を走らせて画素が明から暗に変わる
点を捜し出し、これをＸ座標とする。この操作を、間隔
を置いて宅行に数回、例えば３列に亘って行う。そして
、この口ＩＩ検出した点（Ｘ座標）が予め設定した許容
誤差範囲内にあるか否かを判断して、このＸ座標を決定
する。Based on this binarized image, the position of the conductor chip 1 is detected, and when detecting this vertical contour line 1a (X coordinate), it is parallel to the contour line 1b in fM (X direction). A search range (line) is set with a width of one pixel, and a search line 3 is run along this search range to find a point where a pixel changes from bright to dark, and this is set as the X coordinate. This operation is performed several times at intervals, for example, over three rows. Then, it is determined whether the point (X coordinate) detected by the mouth II is within a preset tolerance range, and the X coordinate is determined.

横の輪郭線１ｂ（Ｙ座標）を検出する時には、縦（Ｙ方
向）の輪郭線１ａに平行に１画素の幅で検索範囲（ライ
ン）を設定し、この検索範囲に沿って検索線３′を走ら
せて画素が明から暗に変わる点を捜し出し、これをＹ座
標とする。この操作を、間隔を置いて平行に数回、例え
ば３列に亘って行う。そして、この時検出した点（Ｙ座
標）がｒ・め設定した。′１容誤差範囲内にあるか占か
を判断して、このＹ座標を決定する。When detecting the horizontal contour line 1b (Y coordinate), set a search range (line) parallel to the vertical (Y direction) contour line 1a with a width of 1 pixel, and search line 3' along this search range. Run to find the point where the pixel changes from bright to dark, and set this as the Y coordinate. This operation is performed several times in parallel at intervals, for example, over three rows. Then, the point (Y coordinate) detected at this time was set to r. This Y coordinate is determined by determining whether it is within the 1 volume error range or not.

上記操作により、半導体チップ１のコーナ部ＣのＸ座標
及びＹ座標を決定して、この位置の検出を行うのである
。Through the above operations, the X and Y coordinates of the corner C of the semiconductor chip 1 are determined, and this position is detected.

（発明が解決しようとする課題） 上記検査方法では、２値化画像において、半導体チップ
とダイシングラインとか明確に区別できるよう、その境
界である半導体チップの輪郭線が直線になっている場合
には、半導体チップの位置を正確に検出することができ
る。しかしながら、照明の強さ、照明の角度及び２値化
する際のしきい値の設定等の影響で、２値化画像か乱れ
半導体チップとダイシングラインとの境界が直線になら
ない場合がある。この場合、上記検索線による検索では
、検索範囲は著しく狭いため、この境界の門凸や明暗の
程度等によって作動しなかったり誤作動を起こし、半導
体チップの位置を全く検出できないか、または誤検出を
して正確な位置を検出することができないことがあると
いった問題点があった。(Problem to be Solved by the Invention) In the above inspection method, in order to clearly distinguish the semiconductor chip and the dicing line in the binarized image, if the outline of the semiconductor chip that is the boundary between them is a straight line, , the position of the semiconductor chip can be detected accurately. However, due to the influence of the intensity of illumination, the angle of illumination, the setting of a threshold value during binarization, etc., the binarized image may be distorted and the boundary between the semiconductor chip and the dicing line may not be a straight line. In this case, the search using the above search line has an extremely narrow search range, so it may not work or may malfunction depending on the gate convexity of this boundary, the degree of brightness, etc., and the position of the semiconductor chip may not be detected at all, or it may be detected incorrectly. There was a problem in that it was sometimes impossible to detect an accurate position.

本発明は上記に鑑み、２値化画像に多少の乱れかあって
も、正確かつ確実に半導体チップの位置を検出できるよ
うにしたものを提供することを目的とする。In view of the above, it is an object of the present invention to provide an apparatus that can accurately and reliably detect the position of a semiconductor chip even if there is some disturbance in the binarized image.

〔発明の構成〕[Structure of the invention]

（課題を解決するための手段） 上記［１的を達成するため、本発明における半導体チッ
プの検出方法は、半導体チップ上に照射した光の反射光
を撮像するとともに２値化装置で２値化し、この２値化
画像を基にダイシングラインを検出して半導体ウェハ上
の半導体チップの位置を検出する位置検出方法において
、上記ダイシングラインに直交する所定の位置に矩形状
のマスク領域を設け、このマスク領域の幅方向の画素数
を該マスク開城の長さ方向に沿って計測し、この画素数
が所定数以上又は所定数以下となった位置を’Ｆ−導体
チツブの一辺の輪郭位置とするようにしたものである。(Means for Solving the Problems) In order to achieve the above [1], the semiconductor chip detection method of the present invention images the reflected light of the light irradiated onto the semiconductor chip and binarizes it with a binarizer. In a position detection method that detects the position of a semiconductor chip on a semiconductor wafer by detecting a dicing line based on this binarized image, a rectangular mask area is provided at a predetermined position orthogonal to the dicing line, and this The number of pixels in the width direction of the mask area is measured along the length direction of the mask opening, and the position where this number of pixels is greater than or equal to a predetermined number is defined as the outline position of one side of the F-conductor chip. This is how it was done.

（作　用） 上記のように構成された本発明によれば、半導体チップ
の位置の検出は、マスク領域の幅方向の画素数を数える
ことによって、一定の幅に互って行われるので、２値化
画像の多少のＩｉしれによっても、この位置を正確かつ
確実に検出することができる。(Function) According to the present invention configured as described above, the position of the semiconductor chip is detected by counting the number of pixels in the width direction of the mask area, so that the detection of the position of the semiconductor chip is performed in a constant width. This position can be detected accurately and reliably even if there is some deviation of Ii in the valued image.

（実施例） 以上、本発明の実施例について第１図乃至第４図に基づ
いて説明する。(Example) Examples of the present invention will now be described based on FIGS. 1 to 4.

第３図において、複数の半導体チップ１が縦及び横方向
に複数個形成された半導体ウェハ４は、駆動モータ５を
備えたＸ−Ｙステージ６の上面に載置され、この駆動モ
ータ５により位置決めが行われる。この半導体チップ１
には、落射照明７がハーフミラ−８を介して真上から、
及び斜光照明りか斜めから夫々照射され、この反射光は
ハーフミラ−８を通過して光学カメラ１０で撮像される
。In FIG. 3, a semiconductor wafer 4 on which a plurality of semiconductor chips 1 are formed in the vertical and horizontal directions is placed on the upper surface of an X-Y stage 6 equipped with a drive motor 5, and is positioned by the drive motor 5. will be held. This semiconductor chip 1
, epi-illumination 7 is illuminated from directly above through a half mirror 8,
The reflected light passes through the half mirror 8 and is imaged by the optical camera 10.

そして、この光学カメラ１０からの映像信号は、２値化
回路１１に入力されてここで２値化され、記ｔａ装置１
２に紀億される。The video signal from this optical camera 10 is input to a binarization circuit 11 where it is binarized.
It will be 2 billion years old.

この記憶された２値化データを・ｌ也面で表すと第１図
に示すようになり、上記第５図と同様に半導体チップ１
は明るく、ダイシングライン２は暗く写し出される。If this stored binarized data is represented on a plane, it will be as shown in FIG. 1, and as in FIG.
is bright, and dicing line 2 is projected darkly.

この２値化画像に基づいて半導体チップ１の位置を検出
するのであるが、これを以下のようにして行う。The position of the semiconductor chip 1 is detected based on this binarized image, and this is performed as follows.

先ず、同図における右下隅部Ｃ１のＸ、　Ｙ座標を求め
る方法について説明する。First, a method for determining the X and Y coordinates of the lower right corner C1 in the figure will be explained.

Ｘ座標を検出するため、検出する右下隅部Ｃ１の上方に
位置して″＋−＋−導体チップＦＭ（Ｘ方向）の輪郭線
１ｂに沿って横方向に延び、かつ縦方向（Ｙ方向）のダ
イシングライン２と交差する矩形状のマスク領域１３を
設ける。In order to detect the A rectangular mask region 13 is provided that intersects with the dicing line 2.

そして、このマスク領域１３の幅方向（Ｙ方向）１４ａ
に画素数を数え、これをマスク領域１３の長さ方向（Ｘ
方向）１４ｂの全域に亘って順次繰り返す。Then, the width direction (Y direction) 14a of this mask area 13
Count the number of pixels in the length direction of the mask area 13 (X
(direction) 14b is sequentially repeated.

この時のＸ座標を横軸に、画素のカウント数１５を縦中
由１ことったグラフを７１訃１．６で示す。A graph with the X coordinate at this time as the horizontal axis and the pixel count number 15 as 1 in the vertical axis is shown as 71 and 1.6.

そして、このカウント数１５を一定の検索方向１７、即
ち左から右方向にチエツクして行き、所定のカウント数
下限値１８よりも多く、かつ最初に画素数が最大となっ
たＸ位置１９を半導体チップ１のＸ座標とするのである
。Then, this count number 15 is checked in a certain search direction 17, that is, from left to right, and the This is the X coordinate of chip 1.

Ｙ座標を検出するためには、検出する右下隅部Ｃ１の右
側に位置して半導体チップ１の縦（Ｙ方向）の輪郭線１
ａに沿って縦方向に延び、かつ横ｈ′向（Ｘ方向）のダ
イシングライン２と交差する矩形状のマスク領域２０を
設ける。In order to detect the Y coordinate, the vertical (Y direction) outline 1 of the semiconductor chip 1 is located on the right side of the lower right corner C1 to be detected.
A rectangular mask area 20 is provided which extends vertically along the line a and intersects the dicing line 2 in the horizontal h' direction (X direction).

そして、上記とほぼ同様にこのマスク領域２０の幅方向
（Ｘ方向）２１ａに画素数を数え、これをマスク領域２
０の長さノｊ向（Ｙ方向）２１ｂの全域に亘って順次繰
り返す。Then, in almost the same way as above, count the number of pixels in the width direction (X direction) 21a of this mask area 20, and add this to the mask area 2.
This is sequentially repeated over the entire length of 0 in the j direction (Y direction) 21b.

この時のＹ座標を横軸に、画素のカウント数１５を縦軸
にとったグラフ１６を作成し、このカウント数１５を一
定の検索方向１７、即ち上から下方向にチエツクして行
き、所定のカウント数下限値１８よりも多く、かつ最初
に画素数が最大となったＹ位置２２を半導体チップ１の
Ｙ座標とするのである。A graph 16 is created with the Y coordinate at this time on the horizontal axis and the pixel count number 15 on the vertical axis, and this count number 15 is checked in a certain search direction 17, that is, from top to bottom, and a predetermined The Y position 22 where the number of pixels is larger than the lower limit value 18 of the count number and where the number of pixels first becomes maximum is set as the Y coordinate of the semiconductor chip 1.

そして、上記Ｘ座標とＹ座標により、半導体チップ１の
右下隅のコーナ部Ｃ１の位置を検出するのである。The position of the lower right corner C1 of the semiconductor chip 1 is then detected using the X and Y coordinates.

なお、同図における左上隅のコーナ部Ｃ２のＸ。In addition, the X of corner part C2 of the upper left corner in the same figure.

Ｙ座標を検出するには、第４図（ａ）で示すように、Ｘ
座標を検出するマスク領域１３をコーナ部Ｃ２の下側に
設けて検索方向１７を右から左方向にするとともに、Ｙ
座標を検出するマスク領域２０をコーナ部Ｃ２の右側に
設けて検索方向１７を下から上方向にする。右下隅のコ
ーナ部Ｃ３のＸ、　Ｙ座標を検出するには、同図（ｂ）
で示すように、Ｘ座標を検出するマスク領域１３をコー
ナ部Ｃ３の下側に設けて検索方向１７を左から右方向に
するとともに、Ｙ座標を検出するマスク領域２０をコー
ナ部Ｃ３の左側に設けて検索方向１７をドから上方向に
する。左下隅のコーナ部Ｃ４のＸ、Ｙ座標を検出するに
は、同図（ｃ）で示すように、Ｘ座標を検出するマスク
領域１３をコーナ部Ｃ４の上側に設けて検索方向１７を
右から左方向にするとともに、Ｙ座標を検出するマスク
領域１８をコーナ部Ｃ４の右側に設けて検索方向１７を
上から下方向にすることによって行うのである。To detect the Y coordinate, as shown in Figure 4(a),
A mask area 13 for detecting coordinates is provided below the corner portion C2, and the search direction 17 is from right to left.
A mask area 20 for detecting coordinates is provided on the right side of the corner portion C2, and the search direction 17 is from bottom to top. To detect the X and Y coordinates of corner C3 at the lower right corner, use the same figure (b).
As shown in , a mask area 13 for detecting the X coordinate is provided below the corner C3 so that the search direction 17 is from left to right, and a mask area 20 for detecting the Y coordinate is provided on the left side of the corner C3. The search direction 17 is set upward from C. To detect the X and Y coordinates of the corner C4 at the lower left corner, as shown in FIG. This is done by setting the search direction 17 to the left, providing the mask area 18 for detecting the Y coordinate on the right side of the corner C4, and setting the search direction 17 from top to bottom.

〔発明の効果〕〔Effect of the invention〕

本発明は上記のような構成であるので、半導体チップの
位置の検出は、マスク領域の幅方向の画素数を数えるこ
とによって、一定の幅に亘って行われるので、２値化画
像の多少の乱れによっても、この位置を正確、かつ確実
に検出することができる効果がある。Since the present invention has the above-described configuration, the position of the semiconductor chip is detected over a certain width by counting the number of pixels in the width direction of the mask area. Even if there is a disturbance, this position can be detected accurately and reliably.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図乃至第４図は本発明の一実施例を示し、第１図は
マスク領域を設けた２値化画面の概念図、第２図は＝１
測位置と計測した画素数との関係を示す図、第３図は全
体概要図、第４図は夫々異なる位置にマスク領域を設け
た状態を示す２値化画面の概念図、第５図は従来例を示
す２値化画面の概念図である。 １・・・半導体チップ、訃・・ダイシングライン、４・
・・半導体ウニ／１．７・・・落射照明、９・・・斜光
照明、１０・・・光学カメラ、１１・・・２値化回路、
１２・・・記憶装置、１３．２０・・・マスク領域、１
５・・・カウント数、１７・・・検査方向。 出願人代理人　　佐　　藤　　−雄 第１図 第２図 第３図 （ａ）　　　　　　　（ｂ）　　　　　　　（ｃ）第４
図 ×◆−−− 第５図1 to 4 show an embodiment of the present invention, FIG. 1 is a conceptual diagram of a binarized screen provided with a mask area, and FIG. 2 is a conceptual diagram of a binary screen provided with a mask area.
A diagram showing the relationship between the measured position and the number of pixels measured, Fig. 3 is an overall overview diagram, Fig. 4 is a conceptual diagram of a binarized screen showing a state where mask areas are provided at different positions, and Fig. 5 is a diagram showing the relationship between the measured position and the number of pixels measured. It is a conceptual diagram of a binarization screen showing a conventional example. 1. Semiconductor chip, dicing line, 4.
... Semiconductor sea urchin/1.7... Epi-illumination, 9... Oblique lighting, 10... Optical camera, 11... Binarization circuit,
12...Storage device, 13.20...Mask area, 1
5...Count number, 17...Inspection direction. Applicant's agent Mr. Sato Figure 1 Figure 2 Figure 3 (a) (b) (c) Figure 4
Figure×◆--- Figure 5

Claims (1)

【特許請求の範囲】[Claims] 　半導体チップ上に照射した光の反射光を撮像するとと
もに２値化装置で２値化し、この２値化画像を基にダイ
シングラインを検出して半導体ウェハ上の半導体チップ
の位置を検出する位置検出方法において、上記ダイシン
グラインに直交する所定の位置に矩形状のマスク領域を
設け、このマスク領域の幅方向の画素数を該マスク領域
の長さ方向に沿って計測し、この画素数が所定数以上又
は所定数以下となった位置を半導体チップの一辺の輪郭
位置とすることを特徴とする半導体ウェハにおける半導
体チップの位置検出方法。Position detection involves capturing an image of the reflected light from the light irradiated onto the semiconductor chip, converting it into a binary image using a binarization device, and detecting the dicing line based on this binarized image to detect the position of the semiconductor chip on the semiconductor wafer. In the method, a rectangular mask area is provided at a predetermined position perpendicular to the dicing line, the number of pixels in the width direction of this mask area is measured along the length direction of the mask area, and this number of pixels is determined as a predetermined number. A method for detecting the position of a semiconductor chip on a semiconductor wafer, characterized in that a position at which the number is above or below a predetermined number is determined as a contour position on one side of the semiconductor chip.
JP63083533A 1988-04-05 1988-04-05 Method for detecting location of semiconductor chip on semiconductor wafer Pending JPH01280334A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP63083533A JPH01280334A (en) 1988-04-05 1988-04-05 Method for detecting location of semiconductor chip on semiconductor wafer
KR1019890004445A KR890016636A (en) 1988-04-05 1989-04-04 Semiconductor chip position detection method in semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63083533A JPH01280334A (en) 1988-04-05 1988-04-05 Method for detecting location of semiconductor chip on semiconductor wafer

Publications (1)

Publication Number Publication Date
JPH01280334A true JPH01280334A (en) 1989-11-10

Family

ID=13805134

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63083533A Pending JPH01280334A (en) 1988-04-05 1988-04-05 Method for detecting location of semiconductor chip on semiconductor wafer

Country Status (2)

Country Link
JP (1) JPH01280334A (en)
KR (1) KR890016636A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8034659B2 (en) 2006-06-23 2011-10-11 Hitachi Chemical Company, Ltd. Production method of semiconductor device and bonding film

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6261340A (en) * 1985-09-11 1987-03-18 Fuji Electric Co Ltd Detecting device for necessary positioning angle of wafer
JPS62150112A (en) * 1985-12-25 1987-07-04 Hitachi Electronics Eng Co Ltd System for confirming line pattern

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6261340A (en) * 1985-09-11 1987-03-18 Fuji Electric Co Ltd Detecting device for necessary positioning angle of wafer
JPS62150112A (en) * 1985-12-25 1987-07-04 Hitachi Electronics Eng Co Ltd System for confirming line pattern

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8034659B2 (en) 2006-06-23 2011-10-11 Hitachi Chemical Company, Ltd. Production method of semiconductor device and bonding film
JP2012054582A (en) * 2006-06-23 2012-03-15 Hitachi Chem Co Ltd Adhesive film
JP5181222B2 (en) * 2006-06-23 2013-04-10 日立化成株式会社 Manufacturing method of semiconductor device
JP2013102190A (en) * 2006-06-23 2013-05-23 Hitachi Chemical Co Ltd Semiconductor device manufacturing method

Also Published As

Publication number Publication date
KR890016636A (en) 1989-11-29

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