JPH0225987B2 - - Google Patents

Info

Publication number
JPH0225987B2
JPH0225987B2 JP19010286A JP19010286A JPH0225987B2 JP H0225987 B2 JPH0225987 B2 JP H0225987B2 JP 19010286 A JP19010286 A JP 19010286A JP 19010286 A JP19010286 A JP 19010286A JP H0225987 B2 JPH0225987 B2 JP H0225987B2
Authority
JP
Japan
Prior art keywords
target
backing plate
reaction
sputtering device
sputtering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP19010286A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6345368A (ja
Inventor
Shigeya Mori
Toshinobu Araki
Katsuya Okumura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP19010286A priority Critical patent/JPS6345368A/ja
Publication of JPS6345368A publication Critical patent/JPS6345368A/ja
Publication of JPH0225987B2 publication Critical patent/JPH0225987B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
JP19010286A 1986-08-13 1986-08-13 スパツタ装置 Granted JPS6345368A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19010286A JPS6345368A (ja) 1986-08-13 1986-08-13 スパツタ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19010286A JPS6345368A (ja) 1986-08-13 1986-08-13 スパツタ装置

Publications (2)

Publication Number Publication Date
JPS6345368A JPS6345368A (ja) 1988-02-26
JPH0225987B2 true JPH0225987B2 (cs) 1990-06-06

Family

ID=16252409

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19010286A Granted JPS6345368A (ja) 1986-08-13 1986-08-13 スパツタ装置

Country Status (1)

Country Link
JP (1) JPS6345368A (cs)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2756158B2 (ja) * 1989-10-20 1998-05-25 東京エレクトロン株式会社 スパッタ装置
JPH0774436B2 (ja) * 1990-09-20 1995-08-09 富士通株式会社 薄膜形成方法
US5286361A (en) * 1992-10-19 1994-02-15 Regents Of The University Of California Magnetically attached sputter targets
KR101040076B1 (ko) 2006-06-29 2011-06-09 Jx닛코 닛세끼 킨조쿠 가부시키가이샤 스퍼터링 타겟트/배킹 플레이트 접합체
KR102720427B1 (ko) * 2018-12-07 2024-10-23 에스케이하이닉스 주식회사 스퍼터링 타겟 및 그 제조 방법

Also Published As

Publication number Publication date
JPS6345368A (ja) 1988-02-26

Similar Documents

Publication Publication Date Title
EP0171011B1 (en) Electrostatic chuck
US8157973B2 (en) Sputtering target/backing plate bonded body
US4468313A (en) Sputtering target
US5372694A (en) Target for cathode sputtering
JPH01290765A (ja) スパッタリングターゲット
KR20030064825A (ko) 고전력 스퍼터링 작업을 위한 마찰 끼워맞춤 타겟 어셈블리
US4622122A (en) Planar magnetron cathode target assembly
JPH0726201B2 (ja) 均一な消耗特性を持つ陰極装置
JPH0225987B2 (cs)
GB2117010A (en) Cooling a rectangular target plate for an apparatus for cathodic sputter coating
US4613306A (en) Evaporator crucible for vacuum depositing systems
CN106536787B (zh) 将防腐蚀性金属与Mo或Mo合金扩散接合而得到的背衬板、以及具备该背衬板的溅射靶-背衬板组件
JPS63312976A (ja) マグネトロンスパッタ装置
JPS63227776A (ja) 沈積装置用陰極／ターゲット組合体
JP2844669B2 (ja) 反応性マグネトロンスパッタ装置
JPS59179784A (ja) スパツタ装置
JPS5857287A (ja) 鋼鉄の電気的製造に使用するための軸方向可動な電極支台
JPS6065529A (ja) スパッタリング用タ−ゲット
JPS60135572A (ja) スパツタリング方法
JPH02258974A (ja) スパッタリング装置のターゲット及び陰極部
JP2756158B2 (ja) スパッタ装置
JPH06172988A (ja) スパッタターゲットのバッキングプレート
JPH04337068A (ja) マグネトロン反応性スパッタ装置
KR0179812B1 (ko) 반도체 웨이퍼의 질화티타늄막 형성방법 및 장치
JPS6330989B2 (cs)