JPH0225237Y2 - - Google Patents
Info
- Publication number
- JPH0225237Y2 JPH0225237Y2 JP5646482U JP5646482U JPH0225237Y2 JP H0225237 Y2 JPH0225237 Y2 JP H0225237Y2 JP 5646482 U JP5646482 U JP 5646482U JP 5646482 U JP5646482 U JP 5646482U JP H0225237 Y2 JPH0225237 Y2 JP H0225237Y2
- Authority
- JP
- Japan
- Prior art keywords
- source
- drain regions
- conductivity type
- mos transistor
- channel transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5646482U JPS58159755U (ja) | 1982-04-19 | 1982-04-19 | 半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5646482U JPS58159755U (ja) | 1982-04-19 | 1982-04-19 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58159755U JPS58159755U (ja) | 1983-10-25 |
JPH0225237Y2 true JPH0225237Y2 (enrdf_load_stackoverflow) | 1990-07-11 |
Family
ID=30066992
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5646482U Granted JPS58159755U (ja) | 1982-04-19 | 1982-04-19 | 半導体装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58159755U (enrdf_load_stackoverflow) |
-
1982
- 1982-04-19 JP JP5646482U patent/JPS58159755U/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS58159755U (ja) | 1983-10-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4327368A (en) | CMOS Transistor pair with reverse biased substrate to prevent latch-up | |
JP2633746B2 (ja) | 半導体装置 | |
KR100749231B1 (ko) | 반도체 장치 | |
JPH0654797B2 (ja) | Cmos半導体装置 | |
JPS62115765A (ja) | 半導体装置 | |
JPH0144021B2 (enrdf_load_stackoverflow) | ||
US5014105A (en) | Semiconductor device of complementary integrated circuit | |
US5969391A (en) | Complementary insulated-gate field-effect transistors having improved anti-latchup characteristic | |
US5497011A (en) | Semiconductor memory device and a method of using the same | |
JPH0225237Y2 (enrdf_load_stackoverflow) | ||
JPS6211017Y2 (enrdf_load_stackoverflow) | ||
JPH09139633A (ja) | 制御回路内蔵絶縁ゲート型半導体装置 | |
JPS60247959A (ja) | ラツチアツプ防止回路 | |
US6084272A (en) | Electrostatic discharge protective circuit for semiconductor device | |
JPS63244874A (ja) | 入力保護回路 | |
JPH0666425B2 (ja) | 複合型半導体装置 | |
JPH0817234B2 (ja) | 半導体集積回路 | |
EP0121096B1 (en) | Semiconductor contact structure | |
JPS63252464A (ja) | 半導体装置 | |
JP3071819B2 (ja) | 絶縁ゲート型半導体装置 | |
JPH0518260B2 (enrdf_load_stackoverflow) | ||
JP2525142B2 (ja) | 半導体集積回路 | |
JPS63244671A (ja) | 半導体装置 | |
JPS6255308B2 (enrdf_load_stackoverflow) | ||
JPH0314232B2 (enrdf_load_stackoverflow) |